JPS6437062A - Photodiode - Google Patents
PhotodiodeInfo
- Publication number
- JPS6437062A JPS6437062A JP62193242A JP19324287A JPS6437062A JP S6437062 A JPS6437062 A JP S6437062A JP 62193242 A JP62193242 A JP 62193242A JP 19324287 A JP19324287 A JP 19324287A JP S6437062 A JPS6437062 A JP S6437062A
- Authority
- JP
- Japan
- Prior art keywords
- optical
- wavelength
- photodetector
- mqw
- branching device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To prevent the loss due to optical coupling and realize a photodiode, which is easily integrated, with a wavelength discriminating tunction of a low cross talk by a method wherein an MQW optical waveguide layer and a distributed black reflector are provided, and an optical branching device and a photodetector are formed into one piece. CONSTITUTION:An MQW(multi-quantum well) optical waveguide layer 3 formed on a certain conductivity type semiconductor substrate, an opposite conductivity type layer 2 deposited thereon, electrodes 1 and 6 which apply the prescribed electric field vertically on the MQW optical waveguide layer 3, and distributed black reflectors 8-10 whose frequencies are set corresponding to the optical wavelength to be detected are provided. As mentioned above, an optical branching device and a photodetector are formed into one piece, wherefore the loss due to the coupling between the optical branching device and the photodetector is rid, integration can be easily performed, and the wavelength of a wavelength multiplexed optical signal can be discriminated in a low cross talk.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62193242A JPS6437062A (en) | 1987-07-31 | 1987-07-31 | Photodiode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62193242A JPS6437062A (en) | 1987-07-31 | 1987-07-31 | Photodiode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6437062A true JPS6437062A (en) | 1989-02-07 |
Family
ID=16304695
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62193242A Pending JPS6437062A (en) | 1987-07-31 | 1987-07-31 | Photodiode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6437062A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0383138A2 (en) * | 1989-02-16 | 1990-08-22 | Siemens Aktiengesellschaft | Device for the direct optical reception of a plurality of wave lengths |
JP2015501421A (en) * | 2011-10-14 | 2015-01-15 | アストリアム リミテッド | Devices with quantum well layers |
CN113707731A (en) * | 2021-08-05 | 2021-11-26 | 西安电子科技大学 | Avalanche photodiode based on multi-period Bragg reflector and preparation method thereof |
CN113707733A (en) * | 2021-08-05 | 2021-11-26 | 西安电子科技大学 | Waveguide type Ge/Si avalanche photodiode and preparation method thereof |
-
1987
- 1987-07-31 JP JP62193242A patent/JPS6437062A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0383138A2 (en) * | 1989-02-16 | 1990-08-22 | Siemens Aktiengesellschaft | Device for the direct optical reception of a plurality of wave lengths |
EP0383138A3 (en) * | 1989-02-16 | 1992-03-18 | Siemens Aktiengesellschaft | Device for the direct optical reception of a plurality of wave lengths |
JP2015501421A (en) * | 2011-10-14 | 2015-01-15 | アストリアム リミテッド | Devices with quantum well layers |
CN113707731A (en) * | 2021-08-05 | 2021-11-26 | 西安电子科技大学 | Avalanche photodiode based on multi-period Bragg reflector and preparation method thereof |
CN113707733A (en) * | 2021-08-05 | 2021-11-26 | 西安电子科技大学 | Waveguide type Ge/Si avalanche photodiode and preparation method thereof |
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