JPS6437062A - Photodiode - Google Patents

Photodiode

Info

Publication number
JPS6437062A
JPS6437062A JP62193242A JP19324287A JPS6437062A JP S6437062 A JPS6437062 A JP S6437062A JP 62193242 A JP62193242 A JP 62193242A JP 19324287 A JP19324287 A JP 19324287A JP S6437062 A JPS6437062 A JP S6437062A
Authority
JP
Japan
Prior art keywords
optical
wavelength
photodetector
mqw
branching device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62193242A
Other languages
Japanese (ja)
Inventor
Nobuo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP62193242A priority Critical patent/JPS6437062A/en
Publication of JPS6437062A publication Critical patent/JPS6437062A/en
Pending legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To prevent the loss due to optical coupling and realize a photodiode, which is easily integrated, with a wavelength discriminating tunction of a low cross talk by a method wherein an MQW optical waveguide layer and a distributed black reflector are provided, and an optical branching device and a photodetector are formed into one piece. CONSTITUTION:An MQW(multi-quantum well) optical waveguide layer 3 formed on a certain conductivity type semiconductor substrate, an opposite conductivity type layer 2 deposited thereon, electrodes 1 and 6 which apply the prescribed electric field vertically on the MQW optical waveguide layer 3, and distributed black reflectors 8-10 whose frequencies are set corresponding to the optical wavelength to be detected are provided. As mentioned above, an optical branching device and a photodetector are formed into one piece, wherefore the loss due to the coupling between the optical branching device and the photodetector is rid, integration can be easily performed, and the wavelength of a wavelength multiplexed optical signal can be discriminated in a low cross talk.
JP62193242A 1987-07-31 1987-07-31 Photodiode Pending JPS6437062A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62193242A JPS6437062A (en) 1987-07-31 1987-07-31 Photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62193242A JPS6437062A (en) 1987-07-31 1987-07-31 Photodiode

Publications (1)

Publication Number Publication Date
JPS6437062A true JPS6437062A (en) 1989-02-07

Family

ID=16304695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62193242A Pending JPS6437062A (en) 1987-07-31 1987-07-31 Photodiode

Country Status (1)

Country Link
JP (1) JPS6437062A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0383138A2 (en) * 1989-02-16 1990-08-22 Siemens Aktiengesellschaft Device for the direct optical reception of a plurality of wave lengths
JP2015501421A (en) * 2011-10-14 2015-01-15 アストリアム リミテッド Devices with quantum well layers
CN113707731A (en) * 2021-08-05 2021-11-26 西安电子科技大学 Avalanche photodiode based on multi-period Bragg reflector and preparation method thereof
CN113707733A (en) * 2021-08-05 2021-11-26 西安电子科技大学 Waveguide type Ge/Si avalanche photodiode and preparation method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0383138A2 (en) * 1989-02-16 1990-08-22 Siemens Aktiengesellschaft Device for the direct optical reception of a plurality of wave lengths
EP0383138A3 (en) * 1989-02-16 1992-03-18 Siemens Aktiengesellschaft Device for the direct optical reception of a plurality of wave lengths
JP2015501421A (en) * 2011-10-14 2015-01-15 アストリアム リミテッド Devices with quantum well layers
CN113707731A (en) * 2021-08-05 2021-11-26 西安电子科技大学 Avalanche photodiode based on multi-period Bragg reflector and preparation method thereof
CN113707733A (en) * 2021-08-05 2021-11-26 西安电子科技大学 Waveguide type Ge/Si avalanche photodiode and preparation method thereof

Similar Documents

Publication Publication Date Title
EP0078364A3 (en) Opto-electronic coupling device
AU6002380A (en) Solar cell
ES8500508A1 (en) Photovoltaic device.
JPS61161759A (en) Integrated optoelectronics device
JPS5448493A (en) Semiconductor optical device
JPH08136775A (en) Backboard optical-signal coupling module utilizing condensing lattice connector array
CA2328789A1 (en) Multifunction integrated optics chip having improved polarization extinction ratio
JPS6433734A (en) Light emitting and receiving conjugated element
JPS6437062A (en) Photodiode
EP0393829A3 (en) Optical assemblies
FI903163A0 (en) The connecting piece
JPS648668A (en) Contact type image sensor
JPS55138891A (en) Light semiconductor device
JPS6470704A (en) Plug-in apparatus for transmitting electric energy and optical signal
JPH0273208A (en) Optical fiber packaging system
JPS57113292A (en) Semiconductor light sensing device
JPS5730378A (en) Semiconductor photodetector
JPS56160644A (en) Detecting method for crack
JPS5517149A (en) Light signal branching circuit with monitor
JPS5726482A (en) Semiconductor photodetector
JPS6455506A (en) Optical circuit
JPS6418110A (en) Photoelectron integrated circuit element
JPS55123182A (en) Light emitting diode
JPS6490570A (en) Photodiode
JPS57183076A (en) Field control type optical semiconductor device