JPS6436069A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6436069A
JPS6436069A JP62190095A JP19009587A JPS6436069A JP S6436069 A JPS6436069 A JP S6436069A JP 62190095 A JP62190095 A JP 62190095A JP 19009587 A JP19009587 A JP 19009587A JP S6436069 A JPS6436069 A JP S6436069A
Authority
JP
Japan
Prior art keywords
type
epitaxial layer
layer
sih4
resistivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62190095A
Other languages
Japanese (ja)
Other versions
JPH0695522B2 (en
Inventor
Tomooki Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62190095A priority Critical patent/JPH0695522B2/en
Publication of JPS6436069A publication Critical patent/JPS6436069A/en
Publication of JPH0695522B2 publication Critical patent/JPH0695522B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To realize the growth of an epitaxial layer preventive of an increase in resistivity, by forming a first epitaxial layer of an opposite conductivity type on a semiconductor substrate and next forming a second epitaxial layer thereon, which is of the opposite conductivity type and higher in its resistivity than the first epitaxial layer. CONSTITUTION:P(phosphorus) ions are implanted on a T-PNP transistor formation part from a surface of a P<-> type substrate 1 to form an N type first buried layer 2. Next, Sb(antimony) or As(arsenic) is diffused into an NPN transistor part to form an N<+> type second buried layer 3. Further, BCl3(boron chloride) is diffused into a T-PNP transistor part and an isolation region part to form a P<+> type third burial layer 4. Next an SiH4 heat decomposition reaction is used to make an N<-> type first epitaxial layer 5A grow. In succession the SiH4 heat decomposition reaction of 1050 deg.C or so is also used to make an N<-> type second epitaxial layer 5B of 3OMEGAcm or more grow in an appropriate thickness.
JP62190095A 1987-07-31 1987-07-31 Method for manufacturing semiconductor device Expired - Lifetime JPH0695522B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62190095A JPH0695522B2 (en) 1987-07-31 1987-07-31 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62190095A JPH0695522B2 (en) 1987-07-31 1987-07-31 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS6436069A true JPS6436069A (en) 1989-02-07
JPH0695522B2 JPH0695522B2 (en) 1994-11-24

Family

ID=16252286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62190095A Expired - Lifetime JPH0695522B2 (en) 1987-07-31 1987-07-31 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPH0695522B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04297062A (en) * 1991-03-13 1992-10-21 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
US6593629B2 (en) * 2000-12-28 2003-07-15 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
JP2007180472A (en) * 2005-11-30 2007-07-12 Sanyo Electric Co Ltd Semiconductor device and its fabrication process

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55102263A (en) * 1980-01-21 1980-08-05 Nec Corp Semiconductor integrated circuit
JPS5698857A (en) * 1980-01-10 1981-08-08 Mitsubishi Electric Corp Complex integrated circuit device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5698857A (en) * 1980-01-10 1981-08-08 Mitsubishi Electric Corp Complex integrated circuit device
JPS55102263A (en) * 1980-01-21 1980-08-05 Nec Corp Semiconductor integrated circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04297062A (en) * 1991-03-13 1992-10-21 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
US6593629B2 (en) * 2000-12-28 2003-07-15 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
JP2007180472A (en) * 2005-11-30 2007-07-12 Sanyo Electric Co Ltd Semiconductor device and its fabrication process

Also Published As

Publication number Publication date
JPH0695522B2 (en) 1994-11-24

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