JPS6436046A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To manufacture a semiconductor having an SOI structure which suppresses leakage at an interface by a method wherein an insulating film layer composed of CaF2 or SrF2 is deposited on a singlecrystal silicon substrate, surface silicon is laminated, the surface of the substrate is made amorphous by an ion implantation operation and three layers which have been made amorphous by a solid growth method are made crystalline. CONSTITUTION:Si ions 5 are implanted into a silicon substrate 1; a surface region of the silicon substrate 1, a CaF2 film 2 and a silicon film 3 are made amorphous; single crystal CaF2 6 and singlecrystal silicon 7 are formed on the single-crystal silicon substrate 1 by a solid growth method by using a heat treatment or by irradiation with a beam of light, an ion or an electron. According to this manufacturing method, an interface between an amorphous region and a single-crystal region at an initial stage of the growth operation is situated in a surface region of the substrate 1; a defect 8 caused during the solid growth operation exists only in the substrate 1. Accordingly, a defect density of the surface single-crystal silicon layer 7 forming a device is very small. Because a lattice constant of the insulating crystal 6 is close to that of the single-crystal silicon 7 during the solid growth operation, the mismatching at the interface between the layer 6 and the layer 7 can be suppressed.