JPS6435979A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS6435979A
JPS6435979A JP19179287A JP19179287A JPS6435979A JP S6435979 A JPS6435979 A JP S6435979A JP 19179287 A JP19179287 A JP 19179287A JP 19179287 A JP19179287 A JP 19179287A JP S6435979 A JPS6435979 A JP S6435979A
Authority
JP
Japan
Prior art keywords
stripe
height
layer
1mum
flat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19179287A
Other languages
Japanese (ja)
Inventor
Mitsunori Sugimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP19179287A priority Critical patent/JPS6435979A/en
Publication of JPS6435979A publication Critical patent/JPS6435979A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a preferably etched mirror by dry etching and to apply it to a photoelectric integrated circuit by reducing the height of a ridge stripe at an edge face. CONSTITUTION:A semiconductor layer having an active layer 3 and a clad layer 4 formed on the layer 3, and a protruding ridge stripe 9 formed on the semiconductor layer are provided. Since the height of the stripe is high to 0.5-1mum at the end 9b of the stripe, an irregular dry etching as observed when the height of the stripe is high to 1mum or more is eliminated, and a flat and preferably etched mirror is obtained. Accordingly, since a flat and preferable resonator face is obtained without cleaving, an oscillation threshold current is low, and can be applied to a photoelectric integrated circuit.
JP19179287A 1987-07-30 1987-07-30 Semiconductor laser Pending JPS6435979A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19179287A JPS6435979A (en) 1987-07-30 1987-07-30 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19179287A JPS6435979A (en) 1987-07-30 1987-07-30 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS6435979A true JPS6435979A (en) 1989-02-07

Family

ID=16280612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19179287A Pending JPS6435979A (en) 1987-07-30 1987-07-30 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS6435979A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5178055A (en) * 1990-06-22 1993-01-12 Nissin Kogyo Kabushiki Kaisha Vacuum booster
JP2002246679A (en) * 2001-02-14 2002-08-30 Sony Corp Semiconductor laser element and manufacturing method therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5178055A (en) * 1990-06-22 1993-01-12 Nissin Kogyo Kabushiki Kaisha Vacuum booster
JP2002246679A (en) * 2001-02-14 2002-08-30 Sony Corp Semiconductor laser element and manufacturing method therefor

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