JPS6435979A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS6435979A JPS6435979A JP19179287A JP19179287A JPS6435979A JP S6435979 A JPS6435979 A JP S6435979A JP 19179287 A JP19179287 A JP 19179287A JP 19179287 A JP19179287 A JP 19179287A JP S6435979 A JPS6435979 A JP S6435979A
- Authority
- JP
- Japan
- Prior art keywords
- stripe
- height
- layer
- 1mum
- flat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To obtain a preferably etched mirror by dry etching and to apply it to a photoelectric integrated circuit by reducing the height of a ridge stripe at an edge face. CONSTITUTION:A semiconductor layer having an active layer 3 and a clad layer 4 formed on the layer 3, and a protruding ridge stripe 9 formed on the semiconductor layer are provided. Since the height of the stripe is high to 0.5-1mum at the end 9b of the stripe, an irregular dry etching as observed when the height of the stripe is high to 1mum or more is eliminated, and a flat and preferably etched mirror is obtained. Accordingly, since a flat and preferable resonator face is obtained without cleaving, an oscillation threshold current is low, and can be applied to a photoelectric integrated circuit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19179287A JPS6435979A (en) | 1987-07-30 | 1987-07-30 | Semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19179287A JPS6435979A (en) | 1987-07-30 | 1987-07-30 | Semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6435979A true JPS6435979A (en) | 1989-02-07 |
Family
ID=16280612
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19179287A Pending JPS6435979A (en) | 1987-07-30 | 1987-07-30 | Semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6435979A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5178055A (en) * | 1990-06-22 | 1993-01-12 | Nissin Kogyo Kabushiki Kaisha | Vacuum booster |
JP2002246679A (en) * | 2001-02-14 | 2002-08-30 | Sony Corp | Semiconductor laser element and manufacturing method therefor |
-
1987
- 1987-07-30 JP JP19179287A patent/JPS6435979A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5178055A (en) * | 1990-06-22 | 1993-01-12 | Nissin Kogyo Kabushiki Kaisha | Vacuum booster |
JP2002246679A (en) * | 2001-02-14 | 2002-08-30 | Sony Corp | Semiconductor laser element and manufacturing method therefor |
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