JPS6435916U - - Google Patents
Info
- Publication number
- JPS6435916U JPS6435916U JP13196087U JP13196087U JPS6435916U JP S6435916 U JPS6435916 U JP S6435916U JP 13196087 U JP13196087 U JP 13196087U JP 13196087 U JP13196087 U JP 13196087U JP S6435916 U JPS6435916 U JP S6435916U
- Authority
- JP
- Japan
- Prior art keywords
- umbrella
- indicates
- utility
- scope
- view
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000002265 prevention Effects 0.000 description 1
Description
図は，とも正面図です。
は傘、 １は傘、２は高さ調整器、３はふ
れどめ。
Both figures are front views. is an umbrella, 1 is an umbrella, 2 is a height adjuster, and 3 is a fence.
補正 昭６３．５．２０
考案の名称を次のように補正する。
考案の名称 前の良く見える傘
実用新案登録請求の範囲、図面の簡単な説明を
次のように補正する。Amendment May 20, 1983 The name of the invention is amended as follows. Name of the invention: Umbrella with a clear front view The scope of the utility model registration claim and the brief description of the drawings are amended as follows.
【実用新案登録請求の範囲】
傘全部に切り込みや、折りこみを作り前が良く
見える傘。[Scope of claim for utility model registration] An umbrella that has notches or folds all over the umbrella so that the front can be seen clearly.
【図面の簡単な説明】
第１図は正面図です。第２図は断面図です。第
３図は正面図です。
は傘頭、は傘骨、は切りこみや折りこみ
をつけた所、は高さ調整器付支柱、はふれど
め防止器。[Brief explanation of drawings] Figure 1 is a front view. Figure 2 is a cross-sectional view. Figure 3 is a front view. indicates the umbrella head, indicates the umbrella ribs, indicates the indented or folded area, indicates the support with a height adjuster, and indicates the flange prevention device.
Claims (1)
見える傘。 An umbrella that has notches and folds all over it so you can see the front clearly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13196087U JPS6435916U (en) | 1987-08-28 | 1987-08-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13196087U JPS6435916U (en) | 1987-08-28 | 1987-08-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6435916U true JPS6435916U (en) | 1989-03-03 |
Family
ID=31388498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13196087U Pending JPS6435916U (en) | 1987-08-28 | 1987-08-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6435916U (en) |
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8846517B2 (en) | 2012-07-06 | 2014-09-30 | Micron Technology, Inc. | Methods of forming a pattern on a substrate |
| US8852851B2 (en) | 2006-07-10 | 2014-10-07 | Micron Technology, Inc. | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
| US8859362B2 (en) | 2005-03-28 | 2014-10-14 | Micron Technology, Inc. | Integrated circuit fabrication |
| US8865598B2 (en) | 2005-06-02 | 2014-10-21 | Micron Technology, Inc. | Method for positioning spacers in pitch multiplication |
| US8871648B2 (en) | 2007-12-06 | 2014-10-28 | Micron Technology, Inc. | Method for forming high density patterns |
| US8871646B2 (en) | 2008-11-24 | 2014-10-28 | Micron Technology, Inc. | Methods of forming a masking pattern for integrated circuits |
| US8883644B2 (en) | 2006-08-30 | 2014-11-11 | Micron Technology, Inc. | Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures |
| US8889020B2 (en) | 2006-04-25 | 2014-11-18 | Micron Technology, Inc. | Process for improving critical dimension uniformity of integrated circuit arrays |
| US8895232B2 (en) | 2004-09-01 | 2014-11-25 | Micron Technology, Inc. | Mask material conversion |
| US8901700B2 (en) | 2008-05-05 | 2014-12-02 | Micron Technology, Inc. | Semiconductor structures |
| US8928111B2 (en) | 2008-07-03 | 2015-01-06 | Micron Technology, Inc. | Transistor with high breakdown voltage having separated drain extensions |
| US8932960B2 (en) | 2007-12-18 | 2015-01-13 | Micron Technology, Inc. | Methods for isolating portions of a loop of pitch-multiplied material and related structures |
| US9003651B2 (en) | 2005-09-01 | 2015-04-14 | Micron Technology, Inc. | Methods for integrated circuit fabrication with protective coating for planarization |
| US9035416B2 (en) | 2006-09-14 | 2015-05-19 | Micron Technology, Inc. | Efficient pitch multiplication process |
| US9099314B2 (en) | 2005-09-01 | 2015-08-04 | Micron Technology, Inc. | Pitch multiplication spacers and methods of forming the same |
| US9099402B2 (en) | 2005-05-23 | 2015-08-04 | Micron Technology, Inc. | Integrated circuit structure having arrays of small, closely spaced features |
| US9153458B2 (en) | 2011-05-05 | 2015-10-06 | Micron Technology, Inc. | Methods of forming a pattern on a substrate |
| US9177794B2 (en) | 2012-01-13 | 2015-11-03 | Micron Technology, Inc. | Methods of patterning substrates |
| US9184159B2 (en) | 2006-04-07 | 2015-11-10 | Micron Technology, Inc. | Simplified pitch doubling process flow |
| US9330934B2 (en) | 2009-05-18 | 2016-05-03 | Micron Technology, Inc. | Methods of forming patterns on substrates |
| US9412591B2 (en) | 2007-07-31 | 2016-08-09 | Micron Technology, Inc. | Process of semiconductor fabrication with mask overlay on pitch multiplied features and associated structures |
-
1987
- 1987-08-28 JP JP13196087U patent/JPS6435916U/ja active Pending
Cited By (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8895232B2 (en) | 2004-09-01 | 2014-11-25 | Micron Technology, Inc. | Mask material conversion |
| US8859362B2 (en) | 2005-03-28 | 2014-10-14 | Micron Technology, Inc. | Integrated circuit fabrication |
| US9412594B2 (en) | 2005-03-28 | 2016-08-09 | Micron Technology, Inc. | Integrated circuit fabrication |
| US9147608B2 (en) | 2005-03-28 | 2015-09-29 | Micron Technology, Inc. | Integrated circuit fabrication |
| US9099402B2 (en) | 2005-05-23 | 2015-08-04 | Micron Technology, Inc. | Integrated circuit structure having arrays of small, closely spaced features |
| US8865598B2 (en) | 2005-06-02 | 2014-10-21 | Micron Technology, Inc. | Method for positioning spacers in pitch multiplication |
| US9117766B2 (en) | 2005-06-02 | 2015-08-25 | Micron Technology, Inc. | Method for positioning spacers in pitch multiplication |
| US9099314B2 (en) | 2005-09-01 | 2015-08-04 | Micron Technology, Inc. | Pitch multiplication spacers and methods of forming the same |
| US9003651B2 (en) | 2005-09-01 | 2015-04-14 | Micron Technology, Inc. | Methods for integrated circuit fabrication with protective coating for planarization |
| US9184159B2 (en) | 2006-04-07 | 2015-11-10 | Micron Technology, Inc. | Simplified pitch doubling process flow |
| US8889020B2 (en) | 2006-04-25 | 2014-11-18 | Micron Technology, Inc. | Process for improving critical dimension uniformity of integrated circuit arrays |
| US9553082B2 (en) | 2006-04-25 | 2017-01-24 | Micron Technology, Inc. | Process for improving critical dimension uniformity of integrated circuit arrays |
| US9305782B2 (en) | 2006-07-10 | 2016-04-05 | Micron Technology, Inc. | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
| US8852851B2 (en) | 2006-07-10 | 2014-10-07 | Micron Technology, Inc. | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
| US8883644B2 (en) | 2006-08-30 | 2014-11-11 | Micron Technology, Inc. | Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures |
| US9478497B2 (en) | 2006-08-30 | 2016-10-25 | Micron Technology, Inc. | Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures |
| US9035416B2 (en) | 2006-09-14 | 2015-05-19 | Micron Technology, Inc. | Efficient pitch multiplication process |
| US9412591B2 (en) | 2007-07-31 | 2016-08-09 | Micron Technology, Inc. | Process of semiconductor fabrication with mask overlay on pitch multiplied features and associated structures |
| US8871648B2 (en) | 2007-12-06 | 2014-10-28 | Micron Technology, Inc. | Method for forming high density patterns |
| US8932960B2 (en) | 2007-12-18 | 2015-01-13 | Micron Technology, Inc. | Methods for isolating portions of a loop of pitch-multiplied material and related structures |
| US8901700B2 (en) | 2008-05-05 | 2014-12-02 | Micron Technology, Inc. | Semiconductor structures |
| US8928111B2 (en) | 2008-07-03 | 2015-01-06 | Micron Technology, Inc. | Transistor with high breakdown voltage having separated drain extensions |
| US8871646B2 (en) | 2008-11-24 | 2014-10-28 | Micron Technology, Inc. | Methods of forming a masking pattern for integrated circuits |
| US9330934B2 (en) | 2009-05-18 | 2016-05-03 | Micron Technology, Inc. | Methods of forming patterns on substrates |
| US9153458B2 (en) | 2011-05-05 | 2015-10-06 | Micron Technology, Inc. | Methods of forming a pattern on a substrate |
| US9177794B2 (en) | 2012-01-13 | 2015-11-03 | Micron Technology, Inc. | Methods of patterning substrates |
| US8846517B2 (en) | 2012-07-06 | 2014-09-30 | Micron Technology, Inc. | Methods of forming a pattern on a substrate |