JPS6425587A - Integrated semiconductor laser - Google Patents
Integrated semiconductor laserInfo
- Publication number
- JPS6425587A JPS6425587A JP18251087A JP18251087A JPS6425587A JP S6425587 A JPS6425587 A JP S6425587A JP 18251087 A JP18251087 A JP 18251087A JP 18251087 A JP18251087 A JP 18251087A JP S6425587 A JPS6425587 A JP S6425587A
- Authority
- JP
- Japan
- Prior art keywords
- active region
- laser
- oscillator
- type ingaasp
- photo diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To detect and control oscillation frequency in a simple composition and to obtain stable laser oscillation beams of a small spectral line width by integrating an external oscillator-type semiconductor laser, optical waveguides and a pin photo diode on one and the same substrate. CONSTITUTION:The laser is composed of an n-type InP substrate 1, an active region 2 including an n-type InGaAsP active layer, a non-active region 3 including an n-type InGaAsP wavelayer, an optical waveguide 4 including an n-type InGaAsP wave layer and a pin photo diode 5 including an n-type InGaAsP active layer. End surfaces 9 and 10 constitute a laser oscillator and the non-active region 3 and the optical waveguide 4 constitute a directional coupler. The radiant power in the active region 2 oscillates by a oscillator of edge surfaces of 9 and 10 and the output power is obtained from the edge surface 9. A part of the radiant power 12 and 13 couples with the optical waveguide 4 each at a different optical guide and then is sensed by the pin photo diode. The sensitive power output is fed back to an electrode 7 of the non-active region of the semiconductor laser through a control circuit 11. Because the external oscillator is thus monolithic integrated, mechanical stability is realized maintaining a small spectral line width.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18251087A JPS6425587A (en) | 1987-07-22 | 1987-07-22 | Integrated semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18251087A JPS6425587A (en) | 1987-07-22 | 1987-07-22 | Integrated semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6425587A true JPS6425587A (en) | 1989-01-27 |
Family
ID=16119561
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18251087A Pending JPS6425587A (en) | 1987-07-22 | 1987-07-22 | Integrated semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6425587A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0545681A (en) * | 1991-08-13 | 1993-02-26 | Oki Electric Ind Co Ltd | Wavelength selecting element |
JP2007200942A (en) * | 2006-01-23 | 2007-08-09 | Fujitsu Ltd | Optical module |
JP2008204970A (en) * | 2007-02-16 | 2008-09-04 | Fujitsu Ltd | Optical semiconductor element |
JP2010040785A (en) * | 2008-08-05 | 2010-02-18 | Furukawa Electric Co Ltd:The | Laser element and laser module |
-
1987
- 1987-07-22 JP JP18251087A patent/JPS6425587A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0545681A (en) * | 1991-08-13 | 1993-02-26 | Oki Electric Ind Co Ltd | Wavelength selecting element |
JP2007200942A (en) * | 2006-01-23 | 2007-08-09 | Fujitsu Ltd | Optical module |
US7437037B2 (en) | 2006-01-23 | 2008-10-14 | Fujitsu Limited | Optical module having gain member and partial reflection section waveguides formed on a substrate |
JP2008204970A (en) * | 2007-02-16 | 2008-09-04 | Fujitsu Ltd | Optical semiconductor element |
JP2010040785A (en) * | 2008-08-05 | 2010-02-18 | Furukawa Electric Co Ltd:The | Laser element and laser module |
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