JPS6425562A - Solid-state image sensing device and driving method thereof - Google Patents
Solid-state image sensing device and driving method thereofInfo
- Publication number
- JPS6425562A JPS6425562A JP62182584A JP18258487A JPS6425562A JP S6425562 A JPS6425562 A JP S6425562A JP 62182584 A JP62182584 A JP 62182584A JP 18258487 A JP18258487 A JP 18258487A JP S6425562 A JPS6425562 A JP S6425562A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- optoelectronic transducer
- polysilicon gate
- interface
- optoelectronic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To make it possible to reduce dark current and after images, which are generated in an optoelectronic transducer part, by fixing the potential at the surface of an optoelectronic transducer to 0V, thereby accumulating optical signal charge in the optoelectronic transducer as a bulk state, and preventing the effect from an interface. CONSTITUTION:A negative DC voltage is usually applied to a first layer polysilicon gate electrode 1, and 0V is applied to a p<+> layer 6 in an element isolating region. Thus an inverted layer is formed around an optoelectronic transducer 7. The inverted layer, a p<+> layer 4 on the surface of the optoelectronic transducer and the p<+> layer 6 in the element isolating region are conducted. The surface of the optoelectronic transducer 7 is fixed to 0V. For element isolation, the first layer polysilicon gate 1 on the surface of an optoelectronic transducer part, to which a negative voltage is applied, is utilized. Therefore, it is not required to form a thick thermal oxide film (so-called LOCOS) for element isolation. A contact part between the LOCOS part and a semiconductor interface (so-called bird's beak), which is one of the causes of dark current, can be prevented. In this way, the polysilicon gate 1 is formed around the optoelectronic transducer 7, and the shallow p<+> layer 4 is formed at the optoelectronic transducer part, where the polysilicon gate 1 is not provided. Therefore the effect from the interface is not exerted on the layer at all.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62182584A JP2583897B2 (en) | 1987-07-22 | 1987-07-22 | Solid-state imaging device and driving method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62182584A JP2583897B2 (en) | 1987-07-22 | 1987-07-22 | Solid-state imaging device and driving method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6425562A true JPS6425562A (en) | 1989-01-27 |
JP2583897B2 JP2583897B2 (en) | 1997-02-19 |
Family
ID=16120839
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62182584A Expired - Lifetime JP2583897B2 (en) | 1987-07-22 | 1987-07-22 | Solid-state imaging device and driving method thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2583897B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02168670A (en) * | 1988-09-22 | 1990-06-28 | Matsushita Electron Corp | Solid-state image sensing device and manufacture thereof |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6112064A (en) * | 1984-06-27 | 1986-01-20 | Toshiba Corp | Solid-state image pickup device |
-
1987
- 1987-07-22 JP JP62182584A patent/JP2583897B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6112064A (en) * | 1984-06-27 | 1986-01-20 | Toshiba Corp | Solid-state image pickup device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02168670A (en) * | 1988-09-22 | 1990-06-28 | Matsushita Electron Corp | Solid-state image sensing device and manufacture thereof |
Also Published As
Publication number | Publication date |
---|---|
JP2583897B2 (en) | 1997-02-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071121 Year of fee payment: 11 |