JPS6425562A - Solid-state image sensing device and driving method thereof - Google Patents

Solid-state image sensing device and driving method thereof

Info

Publication number
JPS6425562A
JPS6425562A JP62182584A JP18258487A JPS6425562A JP S6425562 A JPS6425562 A JP S6425562A JP 62182584 A JP62182584 A JP 62182584A JP 18258487 A JP18258487 A JP 18258487A JP S6425562 A JPS6425562 A JP S6425562A
Authority
JP
Japan
Prior art keywords
layer
optoelectronic transducer
polysilicon gate
interface
optoelectronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62182584A
Other languages
Japanese (ja)
Other versions
JP2583897B2 (en
Inventor
Shiyunei Nobusada
Takao Kuroda
Toshiyuki Kozono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP62182584A priority Critical patent/JP2583897B2/en
Publication of JPS6425562A publication Critical patent/JPS6425562A/en
Application granted granted Critical
Publication of JP2583897B2 publication Critical patent/JP2583897B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To make it possible to reduce dark current and after images, which are generated in an optoelectronic transducer part, by fixing the potential at the surface of an optoelectronic transducer to 0V, thereby accumulating optical signal charge in the optoelectronic transducer as a bulk state, and preventing the effect from an interface. CONSTITUTION:A negative DC voltage is usually applied to a first layer polysilicon gate electrode 1, and 0V is applied to a p<+> layer 6 in an element isolating region. Thus an inverted layer is formed around an optoelectronic transducer 7. The inverted layer, a p<+> layer 4 on the surface of the optoelectronic transducer and the p<+> layer 6 in the element isolating region are conducted. The surface of the optoelectronic transducer 7 is fixed to 0V. For element isolation, the first layer polysilicon gate 1 on the surface of an optoelectronic transducer part, to which a negative voltage is applied, is utilized. Therefore, it is not required to form a thick thermal oxide film (so-called LOCOS) for element isolation. A contact part between the LOCOS part and a semiconductor interface (so-called bird's beak), which is one of the causes of dark current, can be prevented. In this way, the polysilicon gate 1 is formed around the optoelectronic transducer 7, and the shallow p<+> layer 4 is formed at the optoelectronic transducer part, where the polysilicon gate 1 is not provided. Therefore the effect from the interface is not exerted on the layer at all.
JP62182584A 1987-07-22 1987-07-22 Solid-state imaging device and driving method thereof Expired - Lifetime JP2583897B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62182584A JP2583897B2 (en) 1987-07-22 1987-07-22 Solid-state imaging device and driving method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62182584A JP2583897B2 (en) 1987-07-22 1987-07-22 Solid-state imaging device and driving method thereof

Publications (2)

Publication Number Publication Date
JPS6425562A true JPS6425562A (en) 1989-01-27
JP2583897B2 JP2583897B2 (en) 1997-02-19

Family

ID=16120839

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62182584A Expired - Lifetime JP2583897B2 (en) 1987-07-22 1987-07-22 Solid-state imaging device and driving method thereof

Country Status (1)

Country Link
JP (1) JP2583897B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02168670A (en) * 1988-09-22 1990-06-28 Matsushita Electron Corp Solid-state image sensing device and manufacture thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6112064A (en) * 1984-06-27 1986-01-20 Toshiba Corp Solid-state image pickup device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6112064A (en) * 1984-06-27 1986-01-20 Toshiba Corp Solid-state image pickup device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02168670A (en) * 1988-09-22 1990-06-28 Matsushita Electron Corp Solid-state image sensing device and manufacture thereof

Also Published As

Publication number Publication date
JP2583897B2 (en) 1997-02-19

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