JPS6424488A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS6424488A
JPS6424488A JP18186487A JP18186487A JPS6424488A JP S6424488 A JPS6424488 A JP S6424488A JP 18186487 A JP18186487 A JP 18186487A JP 18186487 A JP18186487 A JP 18186487A JP S6424488 A JPS6424488 A JP S6424488A
Authority
JP
Japan
Prior art keywords
face
cleavage
mount
sub
projected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18186487A
Other languages
Japanese (ja)
Other versions
JP2579317B2 (en
Inventor
Haruo Tanaka
Naotaro Nakada
Masayoshi Muranishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP62181864A priority Critical patent/JP2579317B2/en
Publication of JPS6424488A publication Critical patent/JPS6424488A/en
Application granted granted Critical
Publication of JP2579317B2 publication Critical patent/JP2579317B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To reflect light rays regularly without irregular reflection in such a direction as not to cause the interference of the reflected light rays with projected light beam by a method wherein a return light incident region of a sub-mount laser projecting end face is provided as a cleavage face which forms a oblique angle with a primary face parallel to the direction in which the laser beam is projected. CONSTITUTION:A semiconductor laser chip 31 is die-bonded to a plate-like sub-mount 81 and a required voltage is applied onto the chip 31, a laser beam MB is projected from an active layer 3a in a direction parallel to the primary face S. A side end face T of the sub-mount 81 laser projecting beam face is composed of a wall face Ta of a dicing angle groove and a cleavage face Tb, where a return light BB, which travels from an outer optical system device toward a light source of the semiconductor laser chip 31, is incident on a return light incident region Tb' surrounded by a broken line in a cleavage face Tb and regularly reflected there in such a direction as not to interfere with a main beam. In addition, provided that a submount is formed of a single crystal, a primary face S intersects the cleavage face Tb at an angle theta of about 109.5 deg., where the primary face is 111 face.
JP62181864A 1987-07-20 1987-07-20 Semiconductor laser device Expired - Lifetime JP2579317B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62181864A JP2579317B2 (en) 1987-07-20 1987-07-20 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62181864A JP2579317B2 (en) 1987-07-20 1987-07-20 Semiconductor laser device

Publications (2)

Publication Number Publication Date
JPS6424488A true JPS6424488A (en) 1989-01-26
JP2579317B2 JP2579317B2 (en) 1997-02-05

Family

ID=16108175

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62181864A Expired - Lifetime JP2579317B2 (en) 1987-07-20 1987-07-20 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JP2579317B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5402435A (en) * 1993-03-05 1995-03-28 Matsushita Electric Industrial Co., Ltd. Optical device
EP0693808A1 (en) * 1994-07-21 1996-01-24 Nec Corporation Semiconductor light-emitting device having oblique top surface of stem for eliminating stray light
JPH08153928A (en) * 1994-11-28 1996-06-11 Nec Corp Manufacture of semiconductor laser array
JP2002094168A (en) * 2000-09-19 2002-03-29 Toshiba Corp Semiconductor laser device and its manufacturing method
JP2006253391A (en) * 2005-03-10 2006-09-21 Sharp Corp Semiconductor laser apparatus
JP2009212179A (en) * 2008-03-03 2009-09-17 Sanyo Electric Co Ltd Semiconductor laser element and method of manufacturing semiconductor laser element

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990064609A (en) * 1999-04-13 1999-08-05 이정민 Synthetic resin bottle cap with integral valve for controlling the outflow of contents

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106091A (en) * 1980-12-23 1982-07-01 Mitsubishi Electric Corp Semiconductor laser device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106091A (en) * 1980-12-23 1982-07-01 Mitsubishi Electric Corp Semiconductor laser device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5402435A (en) * 1993-03-05 1995-03-28 Matsushita Electric Industrial Co., Ltd. Optical device
EP0693808A1 (en) * 1994-07-21 1996-01-24 Nec Corporation Semiconductor light-emitting device having oblique top surface of stem for eliminating stray light
JPH0837339A (en) * 1994-07-21 1996-02-06 Nec Corp Semiconductor laser diode device of reflection prevention type
JPH08153928A (en) * 1994-11-28 1996-06-11 Nec Corp Manufacture of semiconductor laser array
JP2002094168A (en) * 2000-09-19 2002-03-29 Toshiba Corp Semiconductor laser device and its manufacturing method
JP2006253391A (en) * 2005-03-10 2006-09-21 Sharp Corp Semiconductor laser apparatus
JP2009212179A (en) * 2008-03-03 2009-09-17 Sanyo Electric Co Ltd Semiconductor laser element and method of manufacturing semiconductor laser element

Also Published As

Publication number Publication date
JP2579317B2 (en) 1997-02-05

Similar Documents

Publication Publication Date Title
US4911516A (en) Optical device with mode selecting grating
KR930000153B1 (en) Optical transmitter assembly
JPS5654405A (en) Light beam coupler to light wave guide
GB1474969A (en) Electroluminescent devices
GB2255945B (en) An optical reflector
JP2004191989A (en) Optical device and method for coupling output light from light source to optical waveguide
KR880010388A (en) Optical head
JPS6424488A (en) Semiconductor laser device
EP0342292A2 (en) An optical beam splitter
EP0580867A4 (en)
EP0371795A3 (en) Optical coupling circuit element
TR24873A (en) ANTENNA SYSTEM WITH ADJUSTABLE BREAKING WIDTH AND SPEED GUIDANCE SINE
US6282006B1 (en) Optical communications apparatus and method
SE8700469L (en) FITTING DEVICE FOR A LIGHT CELL THAT DOES NOT EXPOSE VISIBLE LASER LIGHT
US4797895A (en) Semiconductor laser apparatus
JPS5783080A (en) Semiconductor laser module device
JPH0720321A (en) Display device
US4925271A (en) Optical beam splitter
JPS5861692A (en) Semiconductor laser device
JPS60207389A (en) Semiconductor laser device
EP0802591A3 (en) Laser diode package having an optical power monitoring function
JPS6457213A (en) Optical coupling method
US6163556A (en) High powered laser diode
JPS60196710A (en) Optical coupler
JPS61167912A (en) Optical coupling device

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term
FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20071107

Year of fee payment: 11