JPS6424488A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS6424488A JPS6424488A JP18186487A JP18186487A JPS6424488A JP S6424488 A JPS6424488 A JP S6424488A JP 18186487 A JP18186487 A JP 18186487A JP 18186487 A JP18186487 A JP 18186487A JP S6424488 A JPS6424488 A JP S6424488A
- Authority
- JP
- Japan
- Prior art keywords
- face
- cleavage
- mount
- sub
- projected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To reflect light rays regularly without irregular reflection in such a direction as not to cause the interference of the reflected light rays with projected light beam by a method wherein a return light incident region of a sub-mount laser projecting end face is provided as a cleavage face which forms a oblique angle with a primary face parallel to the direction in which the laser beam is projected. CONSTITUTION:A semiconductor laser chip 31 is die-bonded to a plate-like sub-mount 81 and a required voltage is applied onto the chip 31, a laser beam MB is projected from an active layer 3a in a direction parallel to the primary face S. A side end face T of the sub-mount 81 laser projecting beam face is composed of a wall face Ta of a dicing angle groove and a cleavage face Tb, where a return light BB, which travels from an outer optical system device toward a light source of the semiconductor laser chip 31, is incident on a return light incident region Tb' surrounded by a broken line in a cleavage face Tb and regularly reflected there in such a direction as not to interfere with a main beam. In addition, provided that a submount is formed of a single crystal, a primary face S intersects the cleavage face Tb at an angle theta of about 109.5 deg., where the primary face is 111 face.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62181864A JP2579317B2 (en) | 1987-07-20 | 1987-07-20 | Semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62181864A JP2579317B2 (en) | 1987-07-20 | 1987-07-20 | Semiconductor laser device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6424488A true JPS6424488A (en) | 1989-01-26 |
JP2579317B2 JP2579317B2 (en) | 1997-02-05 |
Family
ID=16108175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62181864A Expired - Lifetime JP2579317B2 (en) | 1987-07-20 | 1987-07-20 | Semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2579317B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5402435A (en) * | 1993-03-05 | 1995-03-28 | Matsushita Electric Industrial Co., Ltd. | Optical device |
EP0693808A1 (en) * | 1994-07-21 | 1996-01-24 | Nec Corporation | Semiconductor light-emitting device having oblique top surface of stem for eliminating stray light |
JPH08153928A (en) * | 1994-11-28 | 1996-06-11 | Nec Corp | Manufacture of semiconductor laser array |
JP2002094168A (en) * | 2000-09-19 | 2002-03-29 | Toshiba Corp | Semiconductor laser device and its manufacturing method |
JP2006253391A (en) * | 2005-03-10 | 2006-09-21 | Sharp Corp | Semiconductor laser apparatus |
JP2009212179A (en) * | 2008-03-03 | 2009-09-17 | Sanyo Electric Co Ltd | Semiconductor laser element and method of manufacturing semiconductor laser element |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990064609A (en) * | 1999-04-13 | 1999-08-05 | 이정민 | Synthetic resin bottle cap with integral valve for controlling the outflow of contents |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57106091A (en) * | 1980-12-23 | 1982-07-01 | Mitsubishi Electric Corp | Semiconductor laser device |
-
1987
- 1987-07-20 JP JP62181864A patent/JP2579317B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57106091A (en) * | 1980-12-23 | 1982-07-01 | Mitsubishi Electric Corp | Semiconductor laser device |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5402435A (en) * | 1993-03-05 | 1995-03-28 | Matsushita Electric Industrial Co., Ltd. | Optical device |
EP0693808A1 (en) * | 1994-07-21 | 1996-01-24 | Nec Corporation | Semiconductor light-emitting device having oblique top surface of stem for eliminating stray light |
JPH0837339A (en) * | 1994-07-21 | 1996-02-06 | Nec Corp | Semiconductor laser diode device of reflection prevention type |
JPH08153928A (en) * | 1994-11-28 | 1996-06-11 | Nec Corp | Manufacture of semiconductor laser array |
JP2002094168A (en) * | 2000-09-19 | 2002-03-29 | Toshiba Corp | Semiconductor laser device and its manufacturing method |
JP2006253391A (en) * | 2005-03-10 | 2006-09-21 | Sharp Corp | Semiconductor laser apparatus |
JP2009212179A (en) * | 2008-03-03 | 2009-09-17 | Sanyo Electric Co Ltd | Semiconductor laser element and method of manufacturing semiconductor laser element |
Also Published As
Publication number | Publication date |
---|---|
JP2579317B2 (en) | 1997-02-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071107 Year of fee payment: 11 |