JPS6423591A - Manufacture of distributed bragg reflection type semiconductor laser - Google Patents
Manufacture of distributed bragg reflection type semiconductor laserInfo
- Publication number
- JPS6423591A JPS6423591A JP17897887A JP17897887A JPS6423591A JP S6423591 A JPS6423591 A JP S6423591A JP 17897887 A JP17897887 A JP 17897887A JP 17897887 A JP17897887 A JP 17897887A JP S6423591 A JPS6423591 A JP S6423591A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- layers
- waveguide layer
- region
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To obtain a distributed Bragg reflection type semiconductor laser having high performance by so bonding an active waveguide layer made of a vapor epitaxial method and a nonactive waveguide layer formed with a diffraction grating of uniform depth at the top as to abut against the layers to optically match the layers. CONSTITUTION:An active waveguide layer 2 made of InGaAsP and a protective layer 3 made of InP are sequentially laminated, for example, by a liquid epitaxial method over the whole surface of an N-type InP substrate 1. Then, an SiO2 mask 4 is formed, for example, by a sputtering method and a photolithography method on the layer 3. The unnecessary parts of the layers 2, 3 are removed by the mask 4 and a chemically etching method to form a stripe- like region. Then, with the mask 4 as a selectively growing mask a nonactive waveguide layer 6 made of non-doped InGaAsP is formed by an organic metal vapor growing method only on a region except the stripe-like region. Then, after the mask 4 is removed, for example, by a dry etching method, a diffraction grating 6 is formed by a double luminous flux interference exposing method and chemical etching on the whole surface of the layers 3, 5.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17897887A JPH084178B2 (en) | 1987-07-20 | 1987-07-20 | Method for manufacturing distributed Bragg reflection semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17897887A JPH084178B2 (en) | 1987-07-20 | 1987-07-20 | Method for manufacturing distributed Bragg reflection semiconductor laser |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6423591A true JPS6423591A (en) | 1989-01-26 |
JPH084178B2 JPH084178B2 (en) | 1996-01-17 |
Family
ID=16057976
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17897887A Expired - Lifetime JPH084178B2 (en) | 1987-07-20 | 1987-07-20 | Method for manufacturing distributed Bragg reflection semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH084178B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02174180A (en) * | 1988-12-26 | 1990-07-05 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of distributed reflection type semiconductor laser |
JP2012033975A (en) * | 2011-11-14 | 2012-02-16 | Nippon Telegr & Teleph Corp <Ntt> | Method of manufacturing semiconductor laser |
-
1987
- 1987-07-20 JP JP17897887A patent/JPH084178B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02174180A (en) * | 1988-12-26 | 1990-07-05 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of distributed reflection type semiconductor laser |
JP2012033975A (en) * | 2011-11-14 | 2012-02-16 | Nippon Telegr & Teleph Corp <Ntt> | Method of manufacturing semiconductor laser |
Also Published As
Publication number | Publication date |
---|---|
JPH084178B2 (en) | 1996-01-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080117 Year of fee payment: 12 |