JPS6423591A - Manufacture of distributed bragg reflection type semiconductor laser - Google Patents

Manufacture of distributed bragg reflection type semiconductor laser

Info

Publication number
JPS6423591A
JPS6423591A JP17897887A JP17897887A JPS6423591A JP S6423591 A JPS6423591 A JP S6423591A JP 17897887 A JP17897887 A JP 17897887A JP 17897887 A JP17897887 A JP 17897887A JP S6423591 A JPS6423591 A JP S6423591A
Authority
JP
Japan
Prior art keywords
mask
layers
waveguide layer
region
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17897887A
Other languages
Japanese (ja)
Other versions
JPH084178B2 (en
Inventor
Yuichi Tomori
Mamoru Oishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP17897887A priority Critical patent/JPH084178B2/en
Publication of JPS6423591A publication Critical patent/JPS6423591A/en
Publication of JPH084178B2 publication Critical patent/JPH084178B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a distributed Bragg reflection type semiconductor laser having high performance by so bonding an active waveguide layer made of a vapor epitaxial method and a nonactive waveguide layer formed with a diffraction grating of uniform depth at the top as to abut against the layers to optically match the layers. CONSTITUTION:An active waveguide layer 2 made of InGaAsP and a protective layer 3 made of InP are sequentially laminated, for example, by a liquid epitaxial method over the whole surface of an N-type InP substrate 1. Then, an SiO2 mask 4 is formed, for example, by a sputtering method and a photolithography method on the layer 3. The unnecessary parts of the layers 2, 3 are removed by the mask 4 and a chemically etching method to form a stripe- like region. Then, with the mask 4 as a selectively growing mask a nonactive waveguide layer 6 made of non-doped InGaAsP is formed by an organic metal vapor growing method only on a region except the stripe-like region. Then, after the mask 4 is removed, for example, by a dry etching method, a diffraction grating 6 is formed by a double luminous flux interference exposing method and chemical etching on the whole surface of the layers 3, 5.
JP17897887A 1987-07-20 1987-07-20 Method for manufacturing distributed Bragg reflection semiconductor laser Expired - Lifetime JPH084178B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17897887A JPH084178B2 (en) 1987-07-20 1987-07-20 Method for manufacturing distributed Bragg reflection semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17897887A JPH084178B2 (en) 1987-07-20 1987-07-20 Method for manufacturing distributed Bragg reflection semiconductor laser

Publications (2)

Publication Number Publication Date
JPS6423591A true JPS6423591A (en) 1989-01-26
JPH084178B2 JPH084178B2 (en) 1996-01-17

Family

ID=16057976

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17897887A Expired - Lifetime JPH084178B2 (en) 1987-07-20 1987-07-20 Method for manufacturing distributed Bragg reflection semiconductor laser

Country Status (1)

Country Link
JP (1) JPH084178B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02174180A (en) * 1988-12-26 1990-07-05 Nippon Telegr & Teleph Corp <Ntt> Manufacture of distributed reflection type semiconductor laser
JP2012033975A (en) * 2011-11-14 2012-02-16 Nippon Telegr & Teleph Corp <Ntt> Method of manufacturing semiconductor laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02174180A (en) * 1988-12-26 1990-07-05 Nippon Telegr & Teleph Corp <Ntt> Manufacture of distributed reflection type semiconductor laser
JP2012033975A (en) * 2011-11-14 2012-02-16 Nippon Telegr & Teleph Corp <Ntt> Method of manufacturing semiconductor laser

Also Published As

Publication number Publication date
JPH084178B2 (en) 1996-01-17

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