JPS642335A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS642335A JPS642335A JP15806287A JP15806287A JPS642335A JP S642335 A JPS642335 A JP S642335A JP 15806287 A JP15806287 A JP 15806287A JP 15806287 A JP15806287 A JP 15806287A JP S642335 A JPS642335 A JP S642335A
- Authority
- JP
- Japan
- Prior art keywords
- region
- contact part
- etched away
- opening
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To prevent the step disconnection of an aluminum electrode from occurring by a method wherein a phosphorus glass at high etching rate is previously etched away within the range wider than an electric contact part and after forming oxide films etc., an opening is made in the contact part.
CONSTITUTION: A P-type region 1 is formed into a gate region while an N type region 2 is formed into a channel region, a source region 3 and a drain region. An oxide film 41 is formed on a region 2 to form a phosphorus glass layer 5 on the oxide film 41. First, an opening is made in the region 3 for connection to an aluminum electrode 7 and then a layer 5 on a region to be an electric contact part 10 is selectively etched away wider than the contact part 10. Second, another oxide film 42 is formed and further etched away to remove the oxide films 42 and 41 in the region where the layer 5 is selectively etched away for making an opening as the contact part 10 reaching the region 3. Through these procedures, only the homogenous part comprising the oxide films 42, 41 can be etched away to avoid inverse tapering so that the step disconnection of the electrode 7 may be prevented from occurring.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15806287A JPS642335A (en) | 1987-06-24 | 1987-06-24 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15806287A JPS642335A (en) | 1987-06-24 | 1987-06-24 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH012335A JPH012335A (en) | 1989-01-06 |
| JPS642335A true JPS642335A (en) | 1989-01-06 |
Family
ID=15663466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15806287A Pending JPS642335A (en) | 1987-06-24 | 1987-06-24 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS642335A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH044837A (en) * | 1990-04-23 | 1992-01-09 | Rheon Autom Mach Co Ltd | Preparation of baking dough sheet and machine therefor |
| US6740584B2 (en) | 1997-03-27 | 2004-05-25 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of fabricating the same |
| JP2005317932A (en) * | 2004-03-29 | 2005-11-10 | Yamaha Corp | Semiconductor device and its manufacturing method |
| US7728423B2 (en) | 2004-03-29 | 2010-06-01 | Yamaha Corporation | Semiconductor device having step-wise connection structures for thin film elements |
| JP2017059785A (en) * | 2015-09-18 | 2017-03-23 | サンケン電気株式会社 | Semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57199237A (en) * | 1981-06-01 | 1982-12-07 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS634646A (en) * | 1986-06-24 | 1988-01-09 | Matsushita Electric Works Ltd | Manufacture of semiconductor device |
-
1987
- 1987-06-24 JP JP15806287A patent/JPS642335A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57199237A (en) * | 1981-06-01 | 1982-12-07 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS634646A (en) * | 1986-06-24 | 1988-01-09 | Matsushita Electric Works Ltd | Manufacture of semiconductor device |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH044837A (en) * | 1990-04-23 | 1992-01-09 | Rheon Autom Mach Co Ltd | Preparation of baking dough sheet and machine therefor |
| US6740584B2 (en) | 1997-03-27 | 2004-05-25 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of fabricating the same |
| US7084508B2 (en) | 1997-03-27 | 2006-08-01 | Renesas Technology Corp. | Semiconductor device with multiple layer insulating film |
| JP2005317932A (en) * | 2004-03-29 | 2005-11-10 | Yamaha Corp | Semiconductor device and its manufacturing method |
| US7728423B2 (en) | 2004-03-29 | 2010-06-01 | Yamaha Corporation | Semiconductor device having step-wise connection structures for thin film elements |
| US8008127B2 (en) | 2004-03-29 | 2011-08-30 | Yamaha Corporation | Method of fabricating an integrated circuit having a multi-layer structure with a seal ring |
| JP2017059785A (en) * | 2015-09-18 | 2017-03-23 | サンケン電気株式会社 | Semiconductor device |
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