JPS6422057U - - Google Patents

Info

Publication number
JPS6422057U
JPS6422057U JP11757687U JP11757687U JPS6422057U JP S6422057 U JPS6422057 U JP S6422057U JP 11757687 U JP11757687 U JP 11757687U JP 11757687 U JP11757687 U JP 11757687U JP S6422057 U JPS6422057 U JP S6422057U
Authority
JP
Japan
Prior art keywords
tube
heat
metal vapor
resistant
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11757687U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP11757687U priority Critical patent/JPS6422057U/ja
Publication of JPS6422057U publication Critical patent/JPS6422057U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Lasers (AREA)
JP11757687U 1987-07-31 1987-07-31 Pending JPS6422057U (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11757687U JPS6422057U (de) 1987-07-31 1987-07-31

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11757687U JPS6422057U (de) 1987-07-31 1987-07-31

Publications (1)

Publication Number Publication Date
JPS6422057U true JPS6422057U (de) 1989-02-03

Family

ID=31361156

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11757687U Pending JPS6422057U (de) 1987-07-31 1987-07-31

Country Status (1)

Country Link
JP (1) JPS6422057U (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7351624B2 (en) 1993-01-18 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. MIS semiconductor device and method of fabricating the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6294993A (ja) * 1985-10-22 1987-05-01 Koito Mfg Co Ltd 金属イオンレ−ザ−

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6294993A (ja) * 1985-10-22 1987-05-01 Koito Mfg Co Ltd 金属イオンレ−ザ−

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7351624B2 (en) 1993-01-18 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. MIS semiconductor device and method of fabricating the same

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