JPS6421988A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS6421988A JPS6421988A JP17934587A JP17934587A JPS6421988A JP S6421988 A JPS6421988 A JP S6421988A JP 17934587 A JP17934587 A JP 17934587A JP 17934587 A JP17934587 A JP 17934587A JP S6421988 A JPS6421988 A JP S6421988A
- Authority
- JP
- Japan
- Prior art keywords
- mesa
- slopes
- photoresist
- high resistance
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To prevent deterioration in characteristics such as short circuit or leakage of current related to mesa slopes, by forming inactive or high resistance regions on the mesa slopes. CONSTITUTION:In a semiconductor laser device having an active layer 2 the ends of which are located on mesa slopes 5, active or high resistance regions 10 are formed on the mesa slopes. For example, a semiconductor substrate 1 is produced by depositing various semiconductor layers including the active layer 2, and a surface electrode 3 is formed on the surface thereof After a photoresist 8 is patterned to provide a mask, a chemical etching process using the mask of photoresist 8 is performed to form forward mesa grooves 9. Protons are implanted into the mesa slopes 5 in the forward mesa grooves 9 to form inactive or high resistance regions 10 on the mesa slopes 5. Then, after the photoresist 8 is removed, the semiconductor substrate 1 is chemically etched and the rear face thereof is polished so as to decrease the thickness thereof to a predeteremined value. In this manner, a plurality of semiconductor laser devices arranged in array can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17934587A JPS6421988A (en) | 1987-07-16 | 1987-07-16 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17934587A JPS6421988A (en) | 1987-07-16 | 1987-07-16 | Semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6421988A true JPS6421988A (en) | 1989-01-25 |
Family
ID=16064218
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17934587A Pending JPS6421988A (en) | 1987-07-16 | 1987-07-16 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6421988A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0431614U (en) * | 1990-07-11 | 1992-03-13 | ||
| JPH10242583A (en) * | 1997-02-27 | 1998-09-11 | Sharp Corp | Manufacture of semiconductor laser element and semiconductor laser device |
| JP2009252998A (en) * | 2008-04-07 | 2009-10-29 | Sanyo Electric Co Ltd | Semiconductor light emitting element and method of manufacturing the same |
| JP2010074195A (en) * | 2002-03-28 | 2010-04-02 | Osram Opto Semiconductors Gmbh | Luminescent diode chip to be flip-chip mounted on carrier, and method for production thereof |
-
1987
- 1987-07-16 JP JP17934587A patent/JPS6421988A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0431614U (en) * | 1990-07-11 | 1992-03-13 | ||
| JPH10242583A (en) * | 1997-02-27 | 1998-09-11 | Sharp Corp | Manufacture of semiconductor laser element and semiconductor laser device |
| JP2010074195A (en) * | 2002-03-28 | 2010-04-02 | Osram Opto Semiconductors Gmbh | Luminescent diode chip to be flip-chip mounted on carrier, and method for production thereof |
| JP2009252998A (en) * | 2008-04-07 | 2009-10-29 | Sanyo Electric Co Ltd | Semiconductor light emitting element and method of manufacturing the same |
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