JPS6421970A - Nonvolatile semiconductor memory device - Google Patents
Nonvolatile semiconductor memory deviceInfo
- Publication number
- JPS6421970A JPS6421970A JP62178261A JP17826187A JPS6421970A JP S6421970 A JPS6421970 A JP S6421970A JP 62178261 A JP62178261 A JP 62178261A JP 17826187 A JP17826187 A JP 17826187A JP S6421970 A JPS6421970 A JP S6421970A
- Authority
- JP
- Japan
- Prior art keywords
- selecting transistor
- nonvolatile semiconductor
- semiconductor memory
- electrode
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 239000011159 matrix material Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To obtain the title memory; which has a memory matrix constitution, wherein a plurality of pieces of memory transistors are controlled by one selecting transistor, and makes possible a reduction in the area of a cell; by a method wherein a plurality of pieces of the memory transistors are connected in series to the one selecting transistor and the like. CONSTITUTION:Floating gate electrodes 25 are provided through a first gate insulating film 42 on a semiconductor substrate 31 between source and drain regions and in such a way as to oppose to a first gate electrode 27 through a second gate insulating film 43 at the areas of at least parts of the electrode 27 and control gate electrodes 24 are provided thereon through a third gate insulating film 44 to constitute a nonvolatile semiconductor memory element. A selecting transistor and a plurality of nonvolatile semiconductor memory elements are connected in series to each other and the electrode 27 is connected in common to each of them, the drain region at one end of the nonvolatile semiconductor memory element group is connected to the source region of the selecting transistor, the source region at the other one end is connected to a source line and the electrode 27 is connected to the source region of the selecting transistor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62178261A JPS6421970A (en) | 1987-07-16 | 1987-07-16 | Nonvolatile semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62178261A JPS6421970A (en) | 1987-07-16 | 1987-07-16 | Nonvolatile semiconductor memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6421970A true JPS6421970A (en) | 1989-01-25 |
Family
ID=16045399
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62178261A Pending JPS6421970A (en) | 1987-07-16 | 1987-07-16 | Nonvolatile semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6421970A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010129979A (en) * | 2008-12-01 | 2010-06-10 | Rohm Co Ltd | Eeprom |
JP2015011454A (en) * | 2013-06-27 | 2015-01-19 | 旭化成エレクトロニクス株式会社 | Reference voltage generation circuit and reference voltage generation method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6254962A (en) * | 1985-09-04 | 1987-03-10 | Nec Corp | Transistor |
JPS62155568A (en) * | 1985-12-27 | 1987-07-10 | Nec Corp | Nonvolatile semiconductor memory device |
-
1987
- 1987-07-16 JP JP62178261A patent/JPS6421970A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6254962A (en) * | 1985-09-04 | 1987-03-10 | Nec Corp | Transistor |
JPS62155568A (en) * | 1985-12-27 | 1987-07-10 | Nec Corp | Nonvolatile semiconductor memory device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010129979A (en) * | 2008-12-01 | 2010-06-10 | Rohm Co Ltd | Eeprom |
JP2015011454A (en) * | 2013-06-27 | 2015-01-19 | 旭化成エレクトロニクス株式会社 | Reference voltage generation circuit and reference voltage generation method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR970067903A (en) | Nonvolatile memory device, manufacturing method and driving method thereof | |
KR950015763A (en) | Nonvolatile Semiconductor Memory | |
DE3787421D1 (en) | Process for fabricating structures, including EEPROM-type non-volatile memory cells, with self-aligning silicon layers and associated transistors. | |
DE3587470D1 (en) | LIQUID CRYSTAL DISPLAY DEVICE. | |
KR860002154A (en) | Semiconductor integrated circuit device and manufacturing method thereof | |
JPS5771574A (en) | Siemconductor memory circuit | |
KR920010652A (en) | Non-volatile semiconductor memory | |
KR880005686A (en) | Semiconductor memory device and manufacturing method thereof | |
KR920000137A (en) | Nonvolatile Semiconductor Memory | |
EP0441409A3 (en) | Nonvolatile semiconductor memory device | |
US4074238A (en) | Semiconductor read-only memory | |
JPS6459960A (en) | Nonvolatile semiconductor memory element | |
JPS6421970A (en) | Nonvolatile semiconductor memory device | |
KR950012773A (en) | Nonvolatile Semiconductor Memory and Manufacturing Method Thereof | |
WO1988002174A3 (en) | Nonvolatile memory cell array | |
JPS57118664A (en) | Semiconductor device | |
JPS6433961A (en) | Mos composite memory device | |
JPS647397A (en) | Nonvolatile semiconductor memory | |
KR900008025B1 (en) | A gate array with transistor in wiring region | |
DE60218887D1 (en) | MATRIX ADDRESSABLE ARRAY INTEGRATED TRANSISTOR / MEMORY STRUCTURES | |
ATE101752T1 (en) | EPROM THAT ALLOWS MULTIPLE USE OF THE BITLINE CONTACTS. | |
EP0003413A3 (en) | Improvements relating to semiconductor memories | |
ES8201768A1 (en) | Multiple-drain MOS transistor logic gates. | |
EP0335724A3 (en) | Thin film transistor array for an electro-optical device and method of manufacturing the same | |
JPS57196580A (en) | Nonvolatile semiconductor memory storage |