JPS6421970A - Nonvolatile semiconductor memory device - Google Patents

Nonvolatile semiconductor memory device

Info

Publication number
JPS6421970A
JPS6421970A JP62178261A JP17826187A JPS6421970A JP S6421970 A JPS6421970 A JP S6421970A JP 62178261 A JP62178261 A JP 62178261A JP 17826187 A JP17826187 A JP 17826187A JP S6421970 A JPS6421970 A JP S6421970A
Authority
JP
Japan
Prior art keywords
selecting transistor
nonvolatile semiconductor
semiconductor memory
electrode
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62178261A
Other languages
Japanese (ja)
Inventor
Hiroshi Hasunuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62178261A priority Critical patent/JPS6421970A/en
Publication of JPS6421970A publication Critical patent/JPS6421970A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To obtain the title memory; which has a memory matrix constitution, wherein a plurality of pieces of memory transistors are controlled by one selecting transistor, and makes possible a reduction in the area of a cell; by a method wherein a plurality of pieces of the memory transistors are connected in series to the one selecting transistor and the like. CONSTITUTION:Floating gate electrodes 25 are provided through a first gate insulating film 42 on a semiconductor substrate 31 between source and drain regions and in such a way as to oppose to a first gate electrode 27 through a second gate insulating film 43 at the areas of at least parts of the electrode 27 and control gate electrodes 24 are provided thereon through a third gate insulating film 44 to constitute a nonvolatile semiconductor memory element. A selecting transistor and a plurality of nonvolatile semiconductor memory elements are connected in series to each other and the electrode 27 is connected in common to each of them, the drain region at one end of the nonvolatile semiconductor memory element group is connected to the source region of the selecting transistor, the source region at the other one end is connected to a source line and the electrode 27 is connected to the source region of the selecting transistor.
JP62178261A 1987-07-16 1987-07-16 Nonvolatile semiconductor memory device Pending JPS6421970A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62178261A JPS6421970A (en) 1987-07-16 1987-07-16 Nonvolatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62178261A JPS6421970A (en) 1987-07-16 1987-07-16 Nonvolatile semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS6421970A true JPS6421970A (en) 1989-01-25

Family

ID=16045399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62178261A Pending JPS6421970A (en) 1987-07-16 1987-07-16 Nonvolatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS6421970A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010129979A (en) * 2008-12-01 2010-06-10 Rohm Co Ltd Eeprom
JP2015011454A (en) * 2013-06-27 2015-01-19 旭化成エレクトロニクス株式会社 Reference voltage generation circuit and reference voltage generation method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6254962A (en) * 1985-09-04 1987-03-10 Nec Corp Transistor
JPS62155568A (en) * 1985-12-27 1987-07-10 Nec Corp Nonvolatile semiconductor memory device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6254962A (en) * 1985-09-04 1987-03-10 Nec Corp Transistor
JPS62155568A (en) * 1985-12-27 1987-07-10 Nec Corp Nonvolatile semiconductor memory device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010129979A (en) * 2008-12-01 2010-06-10 Rohm Co Ltd Eeprom
JP2015011454A (en) * 2013-06-27 2015-01-19 旭化成エレクトロニクス株式会社 Reference voltage generation circuit and reference voltage generation method

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