JPS6419773A - Power mos field-effect transistor - Google Patents
Power mos field-effect transistorInfo
- Publication number
- JPS6419773A JPS6419773A JP17634787A JP17634787A JPS6419773A JP S6419773 A JPS6419773 A JP S6419773A JP 17634787 A JP17634787 A JP 17634787A JP 17634787 A JP17634787 A JP 17634787A JP S6419773 A JPS6419773 A JP S6419773A
- Authority
- JP
- Japan
- Prior art keywords
- type
- semiconductor substrate
- epitaxial layer
- conductivity type
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 5
- 239000004065 semiconductor Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000008188 pellet Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
PURPOSE:To miniaturize and improve a pellet in breakdown strength by a method wherein a semiconductor substrate of one conductivity type is used and a base of the same conductivity type positioned in a semiconductor layer of the other conductivity type formed on said semiconductor substrate is allowed to be in contact with said semiconductor substrate. CONSTITUTION:An N-type Si epitaxial layer 2 is grown on a P-type Si substrate 1, a gate oxide film 6 is grown by thermal oxidation, a polycrystalline silicon 7 is deposited, and a P-base layer 3 is formed. The polycrystalline silicon 7 is removed except a part for a gate electrode. The N-type Si epitaxial layer 2 except a part that will be actually used is covered by a photoresist or the like. Phosphorus is driven into the N-type Si epitaxial layer 2 by ion implantation or the like for the formation of an N<+>-type drain contact region 5 and a source region 4. Finally, an interlayer insulating film 8, a source electrode 10, and a drain electrode 9 are formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62176347A JP2655403B2 (en) | 1987-07-14 | 1987-07-14 | Power MOS field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62176347A JP2655403B2 (en) | 1987-07-14 | 1987-07-14 | Power MOS field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6419773A true JPS6419773A (en) | 1989-01-23 |
JP2655403B2 JP2655403B2 (en) | 1997-09-17 |
Family
ID=16012009
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62176347A Expired - Lifetime JP2655403B2 (en) | 1987-07-14 | 1987-07-14 | Power MOS field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2655403B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4855033A (en) * | 1986-04-04 | 1989-08-08 | Materials Research Corporation | Cathode and target design for a sputter coating apparatus |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5223277A (en) * | 1975-08-18 | 1977-02-22 | Sony Corp | Method of manufacteuring insulating gate type field effect transistor |
JPS60136377A (en) * | 1983-12-26 | 1985-07-19 | Hitachi Ltd | Manufacture of semiconductor device with insulated gate |
-
1987
- 1987-07-14 JP JP62176347A patent/JP2655403B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5223277A (en) * | 1975-08-18 | 1977-02-22 | Sony Corp | Method of manufacteuring insulating gate type field effect transistor |
JPS60136377A (en) * | 1983-12-26 | 1985-07-19 | Hitachi Ltd | Manufacture of semiconductor device with insulated gate |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4855033A (en) * | 1986-04-04 | 1989-08-08 | Materials Research Corporation | Cathode and target design for a sputter coating apparatus |
Also Published As
Publication number | Publication date |
---|---|
JP2655403B2 (en) | 1997-09-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA1063731A (en) | Method for making transistor structures having impurity regions separated by a short lateral distance | |
JPS62287670A (en) | Manufacture of double diffusion metal oxide semiconductor transistor | |
JPS6446981A (en) | Semiconductor device | |
MY123831A (en) | Method for manufacturing a semiconductor device | |
US4914491A (en) | Junction field-effect transistors formed on insulator substrates | |
JPH0783119B2 (en) | Field effect transistor | |
JPS57206073A (en) | Mis semiconductor device | |
JPS6453574A (en) | Semiconductor device | |
KR840005927A (en) | Semiconductor integrated circuit device and manufacturing method thereof | |
US4713329A (en) | Well mask for CMOS process | |
JPH05145027A (en) | Method of controlling defect formation in manufacture of silicon integrated circuit, method of controlling quality of oxide film and defect formation and method of forming double diffusion integrated circuit device cell and integrated circuit mosfet cell | |
JPS55151363A (en) | Mos semiconductor device and fabricating method of the same | |
JPS645070A (en) | Vertical insulated gate field effect transistor | |
JPS6439069A (en) | Field-effect transistor | |
JPS5691470A (en) | Semiconductor | |
JPS6419773A (en) | Power mos field-effect transistor | |
JPH03205832A (en) | Insulated-gate semiconductor device and manufacture thereof | |
CA1228935A (en) | Semiconductor device with polycrystalline silicon active region and method of fabrication thereof | |
JPH0350771A (en) | Semiconductor device | |
JPS55107229A (en) | Method of manufacturing semiconductor device | |
JPS5688362A (en) | Vertical type power mos transistor | |
EP0224712A3 (en) | Integrated device comprising bipolar and complementary metal oxide semiconductor transistors | |
JPS6465875A (en) | Thin film transistor and manufacture thereof | |
JPS6490562A (en) | Manufacture of semiconductor storage device | |
EP0265958A3 (en) | Process of making insulated- gate field-effect transistors |