JPS6419773A - Power mos field-effect transistor - Google Patents

Power mos field-effect transistor

Info

Publication number
JPS6419773A
JPS6419773A JP17634787A JP17634787A JPS6419773A JP S6419773 A JPS6419773 A JP S6419773A JP 17634787 A JP17634787 A JP 17634787A JP 17634787 A JP17634787 A JP 17634787A JP S6419773 A JPS6419773 A JP S6419773A
Authority
JP
Japan
Prior art keywords
type
semiconductor substrate
epitaxial layer
conductivity type
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17634787A
Other languages
Japanese (ja)
Other versions
JP2655403B2 (en
Inventor
Tomonobu Yoshitake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62176347A priority Critical patent/JP2655403B2/en
Publication of JPS6419773A publication Critical patent/JPS6419773A/en
Application granted granted Critical
Publication of JP2655403B2 publication Critical patent/JP2655403B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

PURPOSE:To miniaturize and improve a pellet in breakdown strength by a method wherein a semiconductor substrate of one conductivity type is used and a base of the same conductivity type positioned in a semiconductor layer of the other conductivity type formed on said semiconductor substrate is allowed to be in contact with said semiconductor substrate. CONSTITUTION:An N-type Si epitaxial layer 2 is grown on a P-type Si substrate 1, a gate oxide film 6 is grown by thermal oxidation, a polycrystalline silicon 7 is deposited, and a P-base layer 3 is formed. The polycrystalline silicon 7 is removed except a part for a gate electrode. The N-type Si epitaxial layer 2 except a part that will be actually used is covered by a photoresist or the like. Phosphorus is driven into the N-type Si epitaxial layer 2 by ion implantation or the like for the formation of an N<+>-type drain contact region 5 and a source region 4. Finally, an interlayer insulating film 8, a source electrode 10, and a drain electrode 9 are formed.
JP62176347A 1987-07-14 1987-07-14 Power MOS field effect transistor Expired - Lifetime JP2655403B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62176347A JP2655403B2 (en) 1987-07-14 1987-07-14 Power MOS field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62176347A JP2655403B2 (en) 1987-07-14 1987-07-14 Power MOS field effect transistor

Publications (2)

Publication Number Publication Date
JPS6419773A true JPS6419773A (en) 1989-01-23
JP2655403B2 JP2655403B2 (en) 1997-09-17

Family

ID=16012009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62176347A Expired - Lifetime JP2655403B2 (en) 1987-07-14 1987-07-14 Power MOS field effect transistor

Country Status (1)

Country Link
JP (1) JP2655403B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4855033A (en) * 1986-04-04 1989-08-08 Materials Research Corporation Cathode and target design for a sputter coating apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5223277A (en) * 1975-08-18 1977-02-22 Sony Corp Method of manufacteuring insulating gate type field effect transistor
JPS60136377A (en) * 1983-12-26 1985-07-19 Hitachi Ltd Manufacture of semiconductor device with insulated gate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5223277A (en) * 1975-08-18 1977-02-22 Sony Corp Method of manufacteuring insulating gate type field effect transistor
JPS60136377A (en) * 1983-12-26 1985-07-19 Hitachi Ltd Manufacture of semiconductor device with insulated gate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4855033A (en) * 1986-04-04 1989-08-08 Materials Research Corporation Cathode and target design for a sputter coating apparatus

Also Published As

Publication number Publication date
JP2655403B2 (en) 1997-09-17

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