JPS6418814U - - Google Patents
Info
- Publication number
- JPS6418814U JPS6418814U JP11324187U JP11324187U JPS6418814U JP S6418814 U JPS6418814 U JP S6418814U JP 11324187 U JP11324187 U JP 11324187U JP 11324187 U JP11324187 U JP 11324187U JP S6418814 U JPS6418814 U JP S6418814U
- Authority
- JP
- Japan
- Prior art keywords
- shot
- circuit
- barrier diodes
- hybrid
- intermediate frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 1
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Description
第1図はこの考案によるモノリシツク化マイク
ロ波集積回路ミキサの構成概念図、第2図はこの
考案によるモノリシツク化マイクロ波集積回路ミ
キサの回路パターン図、第3図はこの考案の基礎
となるモノリシツク化マイクロ波集積回路ミキサ
の構成概念図、第4図はこの考案の基礎となるモ
ノリシツク化マイクロ波集積回路ミキサの回路パ
ターン図である。
図中1は90°ハイブリツト、2は中間周波シ
ヨート回路、3はシヨツトキバリアダイオードD
1,D2、4はRFおよび局発信号シヨート回路
、5はガリウムヒ素を基板材とする誘電体基板、
6は中間周波シヨート、RFおよび局発信号オー
プン回路、7はRFおよび局発信号シヨート、中
間周波オープン回路、端子1はRF信号入力端子
、端子2は局発信号入力端子、端子3は中間周波
出力端子である。なお、図中同一あるいは相当部
分には同一符号を付して示してある。
Figure 1 is a conceptual diagram of the configuration of a monolithic microwave integrated circuit mixer based on this invention, Figure 2 is a circuit pattern diagram of a monolithic microwave integrated circuit mixer based on this invention, and Figure 3 is a monolithic structure that is the basis of this invention. FIG. 4 is a conceptual diagram of the structure of a microwave integrated circuit mixer. FIG. 4 is a circuit pattern diagram of a monolithic microwave integrated circuit mixer which is the basis of this invention. In the figure, 1 is a 90° hybrid, 2 is an intermediate frequency shot circuit, and 3 is a shot barrier diode D.
1, D2, 4 are RF and local signal shot circuits; 5 is a dielectric substrate whose substrate material is gallium arsenide;
6 is an intermediate frequency short, RF and local signal open circuit, 7 is an RF and local signal short, intermediate frequency open circuit, terminal 1 is an RF signal input terminal, terminal 2 is a local signal input terminal, terminal 3 is an intermediate frequency It is an output terminal. It should be noted that the same or corresponding parts in the figures are indicated by the same reference numerals.
Claims (1)
記誘電体基板の一方の面の一部に設けられたマイ
クロストリツプ線路により構成され、かつ2つの
入力端子と2つの出力端子を有する90°ハイブ
リツドと、90°ハイブリツドの2つの出力端子
に互いに逆向きに接続された2つのシヨツトキバ
リアダイオードと、この2つのシヨツトキバリア
ダイオードの90°ハイブリツド側に接続された
中間周波シヨート回路と、2つのシヨツトキバリ
アダイオードの一方側に接続されたRFおよび局
発信号シヨート回路と、2つのシヨツトキバリア
ダイオードのRFおよび局発信号シヨート回路側
を接続した出力端子から成るモノリシツク化マイ
クロ波集積回路バランス型ミキサにおいて、2つ
のシヨツトキバリアダイオードの90°ハイブリ
ツト側にメタル―インシユレータ−メタルキヤバ
シタと先端開放線路および先端短絡線路を用いた
中間周波シヨート、RFおよび局発信号オープン
回路を設け、シヨツトキバリアダイオードの一方
側にメタル―インシユレータ−メタルキヤパシタ
と先端開放線路および先端短絡線路を用いたRF
および局発信号シヨート、中間周波オープン回路
を設けたことを特徴とするモノリシツク化マイク
ロ波集積回路バランス型ミキサ。 A 90° circuit consisting of a dielectric substrate made of gallium arsenide and a microstrip line provided on a part of one surface of the dielectric substrate, and having two input terminals and two output terminals. two shot barrier diodes connected in opposite directions to the two output terminals of the hybrid and 90° hybrid; an intermediate frequency shot circuit connected to the 90° hybrid side of the two shot barrier diodes; A monolithic microwave integrated circuit balance consisting of an RF and local signal short circuit connected to one side of two shot barrier diodes, and an output terminal connected to the RF and local signal short circuit sides of two shot barrier diodes. In a type mixer, an intermediate frequency shot, RF and local signal open circuit using a metal-insulator-metal capacitor, an open-ended line, and a short-circuited line is provided on the 90° hybrid side of the two shot-like barrier diodes. RF using a metal-insulator-metal capacitor and an open-ended line and a short-circuited line on one side of the
A monolithic microwave integrated circuit balanced mixer characterized by having a local oscillator signal shot and an intermediate frequency open circuit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11324187U JPS6418814U (en) | 1987-07-23 | 1987-07-23 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11324187U JPS6418814U (en) | 1987-07-23 | 1987-07-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6418814U true JPS6418814U (en) | 1989-01-30 |
Family
ID=31352902
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11324187U Pending JPS6418814U (en) | 1987-07-23 | 1987-07-23 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6418814U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0478203A (en) * | 1990-07-18 | 1992-03-12 | Mitsubishi Electric Corp | Mixer |
-
1987
- 1987-07-23 JP JP11324187U patent/JPS6418814U/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0478203A (en) * | 1990-07-18 | 1992-03-12 | Mitsubishi Electric Corp | Mixer |
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