JPS6418758U - - Google Patents

Info

Publication number
JPS6418758U
JPS6418758U JP11427887U JP11427887U JPS6418758U JP S6418758 U JPS6418758 U JP S6418758U JP 11427887 U JP11427887 U JP 11427887U JP 11427887 U JP11427887 U JP 11427887U JP S6418758 U JPS6418758 U JP S6418758U
Authority
JP
Japan
Prior art keywords
gate electrode
film
substrate
utility
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11427887U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP11427887U priority Critical patent/JPS6418758U/ja
Publication of JPS6418758U publication Critical patent/JPS6418758U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP11427887U 1987-07-25 1987-07-25 Pending JPS6418758U (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11427887U JPS6418758U (zh) 1987-07-25 1987-07-25

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11427887U JPS6418758U (zh) 1987-07-25 1987-07-25

Publications (1)

Publication Number Publication Date
JPS6418758U true JPS6418758U (zh) 1989-01-30

Family

ID=31354876

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11427887U Pending JPS6418758U (zh) 1987-07-25 1987-07-25

Country Status (1)

Country Link
JP (1) JPS6418758U (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002067335A1 (fr) * 2001-02-19 2002-08-29 International Business Machines Corporation Structure de transistor en couches minces, procede de fabrication d'une structure de transistor en couches minces, et dispositif d'affichage utilisant une structure de transistor en couches minces

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002067335A1 (fr) * 2001-02-19 2002-08-29 International Business Machines Corporation Structure de transistor en couches minces, procede de fabrication d'une structure de transistor en couches minces, et dispositif d'affichage utilisant une structure de transistor en couches minces
US7326600B2 (en) 2001-02-19 2008-02-05 International Business Machines Corpoartion Method for manufacturing a thin-film transistor structure

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