JPS6418262A - Depletion mode metal-oxide semiconductor device - Google Patents
Depletion mode metal-oxide semiconductor deviceInfo
- Publication number
- JPS6418262A JPS6418262A JP17514787A JP17514787A JPS6418262A JP S6418262 A JPS6418262 A JP S6418262A JP 17514787 A JP17514787 A JP 17514787A JP 17514787 A JP17514787 A JP 17514787A JP S6418262 A JPS6418262 A JP S6418262A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- depletion mode
- semiconductor device
- oxide semiconductor
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To suppress an increase in a drain current with the boost of a drain voltage by implanting arsenic in a channel layer to provide a deep ion implantation layer having the same conductivity type as a substrate. CONSTITUTION:After masking the surface of an element formation region 4 wherein a field oxide film 3 and an enhancement type MOS transistor are formed with a resist layer 6, <11>B<+> is ion-implanted in the element formation region 4 of an exposed depletion MOS transistor and a deep ion implantation layer 7 is formed. Then using a mask of the same resist layer 6, <75>As<+> is ion- implanted and a shallow depletion mode N-type channel layer 8 is formed. In this way, an increase in a drain current which takes place in response to a drain voltage can be suppressed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17514787A JPS6418262A (en) | 1987-07-14 | 1987-07-14 | Depletion mode metal-oxide semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17514787A JPS6418262A (en) | 1987-07-14 | 1987-07-14 | Depletion mode metal-oxide semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6418262A true JPS6418262A (en) | 1989-01-23 |
Family
ID=15991098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17514787A Pending JPS6418262A (en) | 1987-07-14 | 1987-07-14 | Depletion mode metal-oxide semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6418262A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2371911A1 (en) | 2010-03-29 | 2011-10-05 | Fujifilm Corporation | Active radiation curable ink composition for inkjet recording, printed matter, method of manufacturing printed matter, molded article of printed matter, and method of manufacturing molded article of printed matter |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5350683A (en) * | 1976-10-19 | 1978-05-09 | Mitsubishi Electric Corp | Mos type semiconductor device |
| JPS6089972A (en) * | 1983-10-24 | 1985-05-20 | Nec Corp | Mis type semiconductor device |
-
1987
- 1987-07-14 JP JP17514787A patent/JPS6418262A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5350683A (en) * | 1976-10-19 | 1978-05-09 | Mitsubishi Electric Corp | Mos type semiconductor device |
| JPS6089972A (en) * | 1983-10-24 | 1985-05-20 | Nec Corp | Mis type semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2371911A1 (en) | 2010-03-29 | 2011-10-05 | Fujifilm Corporation | Active radiation curable ink composition for inkjet recording, printed matter, method of manufacturing printed matter, molded article of printed matter, and method of manufacturing molded article of printed matter |
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