JPS6417862A - Sputtering device - Google Patents

Sputtering device

Info

Publication number
JPS6417862A
JPS6417862A JP17356887A JP17356887A JPS6417862A JP S6417862 A JPS6417862 A JP S6417862A JP 17356887 A JP17356887 A JP 17356887A JP 17356887 A JP17356887 A JP 17356887A JP S6417862 A JPS6417862 A JP S6417862A
Authority
JP
Japan
Prior art keywords
target
recessed
backing plate
projecting parts
cooling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17356887A
Other languages
Japanese (ja)
Inventor
Ryuji Iwama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17356887A priority Critical patent/JPS6417862A/en
Publication of JPS6417862A publication Critical patent/JPS6417862A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To form a sputtering device equipped with a target having superior thermal conductivity and cooling efficiency, by providing recessed and projecting parts having cooling-water passages to the joining plane between a target and a backing plate and by binding the above target and backing plate together by a mechanical means. CONSTITUTION:Recessed and projecting parts 1a, 2a (about 30mm width and about 5mm height) having mutually meshing shapes are formed at the respective planes of a target 1 and a backing plate 2 facing each other. Further, cooling- water passages 2c (about 15mm depth and about 3mm height) are provided, besides conventional cooling-water passages 2b, to the recessed and projecting parts 2a of the backing plate 2. Subsequently, the recessed and projecting parts 1a of the target 1 are engaged with the recessed and projecting parts 2a of the backing plate 2, and they are fixed with bolts 3 into an integral structure. By this method, the sputtering device equipped with the target 1 having superior thermal conductivity and excellent in cooling efficiency can be obtained.
JP17356887A 1987-07-10 1987-07-10 Sputtering device Pending JPS6417862A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17356887A JPS6417862A (en) 1987-07-10 1987-07-10 Sputtering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17356887A JPS6417862A (en) 1987-07-10 1987-07-10 Sputtering device

Publications (1)

Publication Number Publication Date
JPS6417862A true JPS6417862A (en) 1989-01-20

Family

ID=15962970

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17356887A Pending JPS6417862A (en) 1987-07-10 1987-07-10 Sputtering device

Country Status (1)

Country Link
JP (1) JPS6417862A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02285068A (en) * 1989-04-25 1990-11-22 Tokyo Electron Ltd Sputtering device
EP1873274A2 (en) * 2006-06-29 2008-01-02 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) PVD cylindrical target
JP2011076937A (en) * 2009-09-30 2011-04-14 Toshiba Corp Electrode for ion source
CN104711526A (en) * 2013-12-11 2015-06-17 宁波江丰电子材料股份有限公司 Tungsten-titanium alloy target material, backboard, and tungsten-titanium alloy target material assembly

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02285068A (en) * 1989-04-25 1990-11-22 Tokyo Electron Ltd Sputtering device
EP1873274A2 (en) * 2006-06-29 2008-01-02 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) PVD cylindrical target
EP1873274A3 (en) * 2006-06-29 2008-01-23 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) PVD cylindrical target
US7955673B2 (en) 2006-06-29 2011-06-07 Kobe Steel, Ltd. PVD cylindrical target
JP2011076937A (en) * 2009-09-30 2011-04-14 Toshiba Corp Electrode for ion source
CN104711526A (en) * 2013-12-11 2015-06-17 宁波江丰电子材料股份有限公司 Tungsten-titanium alloy target material, backboard, and tungsten-titanium alloy target material assembly

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