JPS6417862A - Sputtering device - Google Patents
Sputtering deviceInfo
- Publication number
- JPS6417862A JPS6417862A JP17356887A JP17356887A JPS6417862A JP S6417862 A JPS6417862 A JP S6417862A JP 17356887 A JP17356887 A JP 17356887A JP 17356887 A JP17356887 A JP 17356887A JP S6417862 A JPS6417862 A JP S6417862A
- Authority
- JP
- Japan
- Prior art keywords
- target
- recessed
- backing plate
- projecting parts
- cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To form a sputtering device equipped with a target having superior thermal conductivity and cooling efficiency, by providing recessed and projecting parts having cooling-water passages to the joining plane between a target and a backing plate and by binding the above target and backing plate together by a mechanical means. CONSTITUTION:Recessed and projecting parts 1a, 2a (about 30mm width and about 5mm height) having mutually meshing shapes are formed at the respective planes of a target 1 and a backing plate 2 facing each other. Further, cooling- water passages 2c (about 15mm depth and about 3mm height) are provided, besides conventional cooling-water passages 2b, to the recessed and projecting parts 2a of the backing plate 2. Subsequently, the recessed and projecting parts 1a of the target 1 are engaged with the recessed and projecting parts 2a of the backing plate 2, and they are fixed with bolts 3 into an integral structure. By this method, the sputtering device equipped with the target 1 having superior thermal conductivity and excellent in cooling efficiency can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17356887A JPS6417862A (en) | 1987-07-10 | 1987-07-10 | Sputtering device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17356887A JPS6417862A (en) | 1987-07-10 | 1987-07-10 | Sputtering device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6417862A true JPS6417862A (en) | 1989-01-20 |
Family
ID=15962970
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17356887A Pending JPS6417862A (en) | 1987-07-10 | 1987-07-10 | Sputtering device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6417862A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02285068A (en) * | 1989-04-25 | 1990-11-22 | Tokyo Electron Ltd | Sputtering device |
EP1873274A2 (en) * | 2006-06-29 | 2008-01-02 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | PVD cylindrical target |
JP2011076937A (en) * | 2009-09-30 | 2011-04-14 | Toshiba Corp | Electrode for ion source |
CN104711526A (en) * | 2013-12-11 | 2015-06-17 | 宁波江丰电子材料股份有限公司 | Tungsten-titanium alloy target material, backboard, and tungsten-titanium alloy target material assembly |
-
1987
- 1987-07-10 JP JP17356887A patent/JPS6417862A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02285068A (en) * | 1989-04-25 | 1990-11-22 | Tokyo Electron Ltd | Sputtering device |
EP1873274A2 (en) * | 2006-06-29 | 2008-01-02 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | PVD cylindrical target |
EP1873274A3 (en) * | 2006-06-29 | 2008-01-23 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | PVD cylindrical target |
US7955673B2 (en) | 2006-06-29 | 2011-06-07 | Kobe Steel, Ltd. | PVD cylindrical target |
JP2011076937A (en) * | 2009-09-30 | 2011-04-14 | Toshiba Corp | Electrode for ion source |
CN104711526A (en) * | 2013-12-11 | 2015-06-17 | 宁波江丰电子材料股份有限公司 | Tungsten-titanium alloy target material, backboard, and tungsten-titanium alloy target material assembly |
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