JPS6415937A - Normal atmospheric pressure cvd system - Google Patents

Normal atmospheric pressure cvd system

Info

Publication number
JPS6415937A
JPS6415937A JP17217787A JP17217787A JPS6415937A JP S6415937 A JPS6415937 A JP S6415937A JP 17217787 A JP17217787 A JP 17217787A JP 17217787 A JP17217787 A JP 17217787A JP S6415937 A JPS6415937 A JP S6415937A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
outer circumferential
substrate
susceptor
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17217787A
Other languages
Japanese (ja)
Inventor
Atsushi Kaido
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP17217787A priority Critical patent/JPS6415937A/en
Publication of JPS6415937A publication Critical patent/JPS6415937A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent the adhesion of dust on the rear of a semiconductor substrate, and to improve reliability and yield by forming a susceptor in structure in which the outer circumferential end section of the rear of the semiconductor substrate is supported under a contact state. CONSTITUTION:A substrate supporter 3 is installed between a heating source 1 and a gas supply port 2 in a system. The substrate supporter 3 consists of a plate made of inconel, and a recessed section 5 smaller than the outer circumferential size of a semiconductor substrate 4 and taking a similar figure to the outer circumferential shape of the substrate 4 is shaped where the semiconductor substrate 4 is placed. The semiconductor substrate 4 is put on the susceptor 3 having such structure by using an automatic carry-out-in machine section 6 so as to completely bring the recessed section 5 to a closed state. A contact surface between the semiconductor substrate 4 and the susceptor 3 extends over several mm in the outer circumferential end section of the rear of the semiconductor substrate, and a raw material gas is prevented from creeping to the rear, thus remarkably reducing dust adhering on the rear.
JP17217787A 1987-07-10 1987-07-10 Normal atmospheric pressure cvd system Pending JPS6415937A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17217787A JPS6415937A (en) 1987-07-10 1987-07-10 Normal atmospheric pressure cvd system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17217787A JPS6415937A (en) 1987-07-10 1987-07-10 Normal atmospheric pressure cvd system

Publications (1)

Publication Number Publication Date
JPS6415937A true JPS6415937A (en) 1989-01-19

Family

ID=15937001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17217787A Pending JPS6415937A (en) 1987-07-10 1987-07-10 Normal atmospheric pressure cvd system

Country Status (1)

Country Link
JP (1) JPS6415937A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5571958A (en) * 1994-04-15 1996-11-05 Unisia Jecs Corporation Apparatus and method for detecting misfire in an internal combustion engine
EP1662244A2 (en) 2004-11-29 2006-05-31 HONDA MOTOR CO., Ltd. A misfire detection apparatus
JP2006234469A (en) * 2005-02-23 2006-09-07 Honda Motor Co Ltd Abnormality detector for cylinder pressure sensor
US9279406B2 (en) 2012-06-22 2016-03-08 Illinois Tool Works, Inc. System and method for analyzing carbon build up in an engine
CN106825686A (en) * 2017-03-01 2017-06-13 刘旭玲 A kind of adjustable machine components punch device of damping effect

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5571958A (en) * 1994-04-15 1996-11-05 Unisia Jecs Corporation Apparatus and method for detecting misfire in an internal combustion engine
EP1662244A2 (en) 2004-11-29 2006-05-31 HONDA MOTOR CO., Ltd. A misfire detection apparatus
JP2006234469A (en) * 2005-02-23 2006-09-07 Honda Motor Co Ltd Abnormality detector for cylinder pressure sensor
US9279406B2 (en) 2012-06-22 2016-03-08 Illinois Tool Works, Inc. System and method for analyzing carbon build up in an engine
CN106825686A (en) * 2017-03-01 2017-06-13 刘旭玲 A kind of adjustable machine components punch device of damping effect

Similar Documents

Publication Publication Date Title
TW335593B (en) Method and apparatus for low temperature deposition of CVD and PECVD films
MY122222A (en) A dicing tape and a method of dicing a semiconductor wafer
ES8700216A1 (en) Glass sheet processing system including topside transfer apparatus.
TW350879B (en) Substrate processing apparatus
HK1041029A1 (en) Reaction chamber for an epitaxial reactor
CA2023278A1 (en) Method to prevent backside growth on substrates in a vapor deposition system
JPS6461376A (en) Component member for semiconductor production
JPS6415937A (en) Normal atmospheric pressure cvd system
JPS6435819A (en) Manufacture of superconducting membrane
EP1050602A3 (en) Process chamber with inner support
JPS6489346A (en) Semiconductor substrate
JPS5681923A (en) Manufacture of thin film
JPS6412522A (en) Semiconductor crystal epitaxy method
JPS6464324A (en) Electrode for plasma etching
EP0374740A3 (en) Semiconductor wafer carrier design
JPS55123130A (en) Plasma treating device
JPS5381069A (en) Production of susceptor in cvd device
JPS57187934A (en) Manufacture of indium-antimony system mixing crystal
JPS57138128A (en) Cvd device
JPS6470783A (en) Thermal fixing roller
JPS52156551A (en) Semiconductor wafer breaking method
EP0668609A3 (en) Process for plasma etching the backside of a semiconductor wafer, the front surface not being coated with a protective resin.
JPS57192017A (en) Epitaxial growing method
JPS5552233A (en) Masking sheet
JPS56140021A (en) Manufacture of silicon carbide thin film