JPS6415740A - Resist removing solution - Google Patents
Resist removing solutionInfo
- Publication number
- JPS6415740A JPS6415740A JP16965887A JP16965887A JPS6415740A JP S6415740 A JPS6415740 A JP S6415740A JP 16965887 A JP16965887 A JP 16965887A JP 16965887 A JP16965887 A JP 16965887A JP S6415740 A JPS6415740 A JP S6415740A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- soln
- residual
- resist removing
- salt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To enhance the removing performance of a resist removing soln. by using a specified result removing soln. CONSTITUTION:An aq. hydrogen peroxide soln. contg. an alkali metallic salt (A) of orthophosphoric acid or condensed phosphoric acid added by 0.003-1wt.% (expressed in terms of anhydride) is used as a resist removing soln. Disodium orthophosphate or sodium pyrophosphate may be used as the salt A. When the removing soln. is used, the amts. of a residual resist and residual foreign matter can be reduced because of the high removing and cleaning performance and not only a photoresist but also an electron beam resist can be removed whether the resist is positive or negative.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16965887A JP2576516B2 (en) | 1987-07-09 | 1987-07-09 | Resist removal liquid |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16965887A JP2576516B2 (en) | 1987-07-09 | 1987-07-09 | Resist removal liquid |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6415740A true JPS6415740A (en) | 1989-01-19 |
JP2576516B2 JP2576516B2 (en) | 1997-01-29 |
Family
ID=15890536
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16965887A Expired - Lifetime JP2576516B2 (en) | 1987-07-09 | 1987-07-09 | Resist removal liquid |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2576516B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000030162A1 (en) * | 1998-11-12 | 2000-05-25 | Sharp Kabushiki Kaisha | Novel detergent and cleaning method using it |
WO2000034996A1 (en) * | 1998-12-09 | 2000-06-15 | Kishimoto Sangyo Co., Ltd. | Stripping agent against resist residues |
JP2005183937A (en) * | 2003-11-25 | 2005-07-07 | Nec Electronics Corp | Manufacturing method of semiconductor device and cleaning device for removing resist |
CN110908254A (en) * | 2019-12-26 | 2020-03-24 | 苏州珮凯科技有限公司 | Curing photoresist removing liquid for 8-inch wafer manufacturing photoetching machine core part CUP and method for removing curing photoresist |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50150650A (en) * | 1974-05-25 | 1975-12-03 | ||
JPS5325102A (en) * | 1976-08-20 | 1978-03-08 | Japan Synthetic Rubber Co Ltd | Composition of peeling liquid |
JPS629630A (en) * | 1985-07-08 | 1987-01-17 | Mitsubishi Gas Chem Co Inc | Resist removing method |
-
1987
- 1987-07-09 JP JP16965887A patent/JP2576516B2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50150650A (en) * | 1974-05-25 | 1975-12-03 | ||
JPS5325102A (en) * | 1976-08-20 | 1978-03-08 | Japan Synthetic Rubber Co Ltd | Composition of peeling liquid |
JPS629630A (en) * | 1985-07-08 | 1987-01-17 | Mitsubishi Gas Chem Co Inc | Resist removing method |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000030162A1 (en) * | 1998-11-12 | 2000-05-25 | Sharp Kabushiki Kaisha | Novel detergent and cleaning method using it |
WO2000034996A1 (en) * | 1998-12-09 | 2000-06-15 | Kishimoto Sangyo Co., Ltd. | Stripping agent against resist residues |
US6534459B1 (en) | 1998-12-09 | 2003-03-18 | Kishimoto Sangyo Co., Ltd. | Resist residue remover |
JP2005183937A (en) * | 2003-11-25 | 2005-07-07 | Nec Electronics Corp | Manufacturing method of semiconductor device and cleaning device for removing resist |
CN110908254A (en) * | 2019-12-26 | 2020-03-24 | 苏州珮凯科技有限公司 | Curing photoresist removing liquid for 8-inch wafer manufacturing photoetching machine core part CUP and method for removing curing photoresist |
Also Published As
Publication number | Publication date |
---|---|
JP2576516B2 (en) | 1997-01-29 |
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