JPS641283A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS641283A
JPS641283A JP15706387A JP15706387A JPS641283A JP S641283 A JPS641283 A JP S641283A JP 15706387 A JP15706387 A JP 15706387A JP 15706387 A JP15706387 A JP 15706387A JP S641283 A JPS641283 A JP S641283A
Authority
JP
Japan
Prior art keywords
gate electrode
substrate
region
forming
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15706387A
Other languages
Japanese (ja)
Other versions
JPH011283A (en
Inventor
Teruyuki Shibamura
Kenji Hosoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62-157063A priority Critical patent/JPH011283A/en
Priority claimed from JP62-157063A external-priority patent/JPH011283A/en
Publication of JPS641283A publication Critical patent/JPS641283A/en
Publication of JPH011283A publication Critical patent/JPH011283A/en
Pending legal-status Critical Current

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  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To simplify the manufacturing process and improve uniformity and reproducibility by forming a doping region, after forming isotropic covering material on the surface of substrate and gate electrode, through the ion implantation via the flat region of recoverying material around the gate electrode.
CONSTITUTION: A gate electrode 3 is formed on a substrate 1 by the RIE method after forming an active region 2 to the substrate 1 by the ion implantation. Next, after forming an isotropic insulating film 8 using, for example, the CVD method, to the surface of substrate 1 and gate electrode 3, a source/drain low resistance region 5 is formed by ion implantation through the flat region of the insulating film 8 around the surface of gate electrode 3. Next, after removing the insulating film 8, an LDD region 6 is formed within the substrate 1 between the gate electrode 3 and source/drain low resistance region 5 through the ion implantation to the substrate 1 considering the gate electrode 3 as a part of the mask. Next, after executing heat processing for activation of implanted ion, the source/drain electrode 7 is formed to the source drain low resistance region 5 by the evaporated lift-off.
COPYRIGHT: (C)1989,JPO&Japio
JP62-157063A 1987-06-23 Manufacturing method of semiconductor device Pending JPH011283A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62-157063A JPH011283A (en) 1987-06-23 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62-157063A JPH011283A (en) 1987-06-23 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS641283A true JPS641283A (en) 1989-01-05
JPH011283A JPH011283A (en) 1989-01-05

Family

ID=

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57124476A (en) * 1981-01-26 1982-08-03 Toshiba Corp Manufacture of semiconductor device
JPS5976475A (en) * 1982-10-26 1984-05-01 Sanyo Electric Co Ltd Manufacture of mos semiconductor device
JPS6072274A (en) * 1983-09-28 1985-04-24 Pioneer Electronic Corp Manufacture of semiconductor device
JPS62183564A (en) * 1986-02-07 1987-08-11 Nec Corp Manufacture of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57124476A (en) * 1981-01-26 1982-08-03 Toshiba Corp Manufacture of semiconductor device
JPS5976475A (en) * 1982-10-26 1984-05-01 Sanyo Electric Co Ltd Manufacture of mos semiconductor device
JPS6072274A (en) * 1983-09-28 1985-04-24 Pioneer Electronic Corp Manufacture of semiconductor device
JPS62183564A (en) * 1986-02-07 1987-08-11 Nec Corp Manufacture of semiconductor device

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