JPS641283A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS641283A JPS641283A JP15706387A JP15706387A JPS641283A JP S641283 A JPS641283 A JP S641283A JP 15706387 A JP15706387 A JP 15706387A JP 15706387 A JP15706387 A JP 15706387A JP S641283 A JPS641283 A JP S641283A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- substrate
- region
- forming
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To simplify the manufacturing process and improve uniformity and reproducibility by forming a doping region, after forming isotropic covering material on the surface of substrate and gate electrode, through the ion implantation via the flat region of recoverying material around the gate electrode.
CONSTITUTION: A gate electrode 3 is formed on a substrate 1 by the RIE method after forming an active region 2 to the substrate 1 by the ion implantation. Next, after forming an isotropic insulating film 8 using, for example, the CVD method, to the surface of substrate 1 and gate electrode 3, a source/drain low resistance region 5 is formed by ion implantation through the flat region of the insulating film 8 around the surface of gate electrode 3. Next, after removing the insulating film 8, an LDD region 6 is formed within the substrate 1 between the gate electrode 3 and source/drain low resistance region 5 through the ion implantation to the substrate 1 considering the gate electrode 3 as a part of the mask. Next, after executing heat processing for activation of implanted ion, the source/drain electrode 7 is formed to the source drain low resistance region 5 by the evaporated lift-off.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62-157063A JPH011283A (en) | 1987-06-23 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62-157063A JPH011283A (en) | 1987-06-23 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS641283A true JPS641283A (en) | 1989-01-05 |
JPH011283A JPH011283A (en) | 1989-01-05 |
Family
ID=
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57124476A (en) * | 1981-01-26 | 1982-08-03 | Toshiba Corp | Manufacture of semiconductor device |
JPS5976475A (en) * | 1982-10-26 | 1984-05-01 | Sanyo Electric Co Ltd | Manufacture of mos semiconductor device |
JPS6072274A (en) * | 1983-09-28 | 1985-04-24 | Pioneer Electronic Corp | Manufacture of semiconductor device |
JPS62183564A (en) * | 1986-02-07 | 1987-08-11 | Nec Corp | Manufacture of semiconductor device |
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57124476A (en) * | 1981-01-26 | 1982-08-03 | Toshiba Corp | Manufacture of semiconductor device |
JPS5976475A (en) * | 1982-10-26 | 1984-05-01 | Sanyo Electric Co Ltd | Manufacture of mos semiconductor device |
JPS6072274A (en) * | 1983-09-28 | 1985-04-24 | Pioneer Electronic Corp | Manufacture of semiconductor device |
JPS62183564A (en) * | 1986-02-07 | 1987-08-11 | Nec Corp | Manufacture of semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0723286A3 (en) | Field-effect transistor and manufacture method thereof | |
JPS57113289A (en) | Semiconductor device and its manufacture | |
JPS57196573A (en) | Manufacture of mos type semiconductor device | |
JPS571252A (en) | Semiconductor device | |
JPS641283A (en) | Manufacture of semiconductor device | |
JPS6453462A (en) | Manufacture of thin film transistor | |
JPS5370687A (en) | Production of semiconductor device | |
JPS51116675A (en) | Manufacturing method for a semiconductor device | |
JPS6453476A (en) | Superconducting three-terminal element and manufacture thereof | |
JPS5550661A (en) | Insulated gate type field effect semiconductor device | |
JPS54117691A (en) | Production of insulating gate-type semiconductor device | |
JPS57193062A (en) | Manufacture of semiconductor device | |
JPS5559781A (en) | Method of fabricating semiconductor device | |
JPS5559775A (en) | Method of fabricating semiconductor device | |
KR890005885A (en) | Manufacturing method of bipolar transistor | |
JPS57153462A (en) | Manufacture of semiconductor integrated circuit device | |
JPS5518042A (en) | Method of fabricating semiconductor device | |
JPS5533037A (en) | Manufacture of semiconductor device | |
JPS5530873A (en) | High withstand field-effect transistor of mis type | |
JPS5739579A (en) | Mos semiconductor device and manufacture thereof | |
JPS6427265A (en) | Manufacture of semiconductor device | |
JPS53144687A (en) | Production of semiconductor device | |
JPS5648174A (en) | Semiconductor device and its preparation | |
JPS5737882A (en) | Compound semiconductor device and production thereof | |
JPS57196574A (en) | Manufacture of semiconductor device |