JPS6412583A - Photodetector - Google Patents

Photodetector

Info

Publication number
JPS6412583A
JPS6412583A JP62167707A JP16770787A JPS6412583A JP S6412583 A JPS6412583 A JP S6412583A JP 62167707 A JP62167707 A JP 62167707A JP 16770787 A JP16770787 A JP 16770787A JP S6412583 A JPS6412583 A JP S6412583A
Authority
JP
Japan
Prior art keywords
region
layer
xcdxte
type
barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62167707A
Other languages
Japanese (ja)
Inventor
Yujiro Naruse
Keitaro Shigenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62167707A priority Critical patent/JPS6412583A/en
Publication of JPS6412583A publication Critical patent/JPS6412583A/en
Pending legal-status Critical Current

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  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To improve a detection capability by a method wherein a tunnel barrier region, which can selectively control a flow of carriers created by a thermal excitation and an optical excitation, is formed in the transition region of a P-N junction. CONSTITUTION:A p-type Hg1-xCdxTe layer 2 and then an Hg1-yCdyTe layer 3 are built up by an epitaxial growth method on a CdTe substrate 1. The relation between (x) and (y) conforms to x<y. Then a p-type Hg1-xCdxTe layer 4 is again built up and, in a part of it, an n-type Hg1-xCdxTe region 4 is formed so as to come close to the layer 3. A ZnS protective film 5 is formed on the surface of the region 4 and an In electrode 6 for taking out a signal is attached to a part of it. As infrared radiation enters from the substrate side, it reaches the P-N junction region of the layer 2 almost without being absorbed and electron-positive holes are produced and electrons begin to be accumulated in a triangle potential region formed before the barrier. However, the blocking capability of the barrier is degraded by an electron accumulation effect and an energy rise effect and the decrease of a signal electron flow can be suppressed.
JP62167707A 1987-07-07 1987-07-07 Photodetector Pending JPS6412583A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62167707A JPS6412583A (en) 1987-07-07 1987-07-07 Photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62167707A JPS6412583A (en) 1987-07-07 1987-07-07 Photodetector

Publications (1)

Publication Number Publication Date
JPS6412583A true JPS6412583A (en) 1989-01-17

Family

ID=15854721

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62167707A Pending JPS6412583A (en) 1987-07-07 1987-07-07 Photodetector

Country Status (1)

Country Link
JP (1) JPS6412583A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014521214A (en) * 2011-06-30 2014-08-25 ユニバーシティー オブ フロリダ リサーチ ファウンデーション,インコーポレイテッド Method and apparatus for detecting infrared radiation with gain
US9997571B2 (en) 2010-05-24 2018-06-12 University Of Florida Research Foundation, Inc. Method and apparatus for providing a charge blocking layer on an infrared up-conversion device
US10700141B2 (en) 2006-09-29 2020-06-30 University Of Florida Research Foundation, Incorporated Method and apparatus for infrared detection and display
US10749058B2 (en) 2015-06-11 2020-08-18 University Of Florida Research Foundation, Incorporated Monodisperse, IR-absorbing nanoparticles and related methods and devices

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10700141B2 (en) 2006-09-29 2020-06-30 University Of Florida Research Foundation, Incorporated Method and apparatus for infrared detection and display
US9997571B2 (en) 2010-05-24 2018-06-12 University Of Florida Research Foundation, Inc. Method and apparatus for providing a charge blocking layer on an infrared up-conversion device
JP2014521214A (en) * 2011-06-30 2014-08-25 ユニバーシティー オブ フロリダ リサーチ ファウンデーション,インコーポレイテッド Method and apparatus for detecting infrared radiation with gain
JP2017175149A (en) * 2011-06-30 2017-09-28 ユニバーシティー オブ フロリダ リサーチ ファウンデーション, インコーポレイテッドUniversity Of Florida Research Foundation, Inc. Method and apparatus for detecting infrared radiation with gain
US10134815B2 (en) 2011-06-30 2018-11-20 Nanoholdings, Llc Method and apparatus for detecting infrared radiation with gain
US10749058B2 (en) 2015-06-11 2020-08-18 University Of Florida Research Foundation, Incorporated Monodisperse, IR-absorbing nanoparticles and related methods and devices

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