JPS6411354A - Sealing structure of electronic circuit - Google Patents
Sealing structure of electronic circuitInfo
- Publication number
- JPS6411354A JPS6411354A JP62166671A JP16667187A JPS6411354A JP S6411354 A JPS6411354 A JP S6411354A JP 62166671 A JP62166671 A JP 62166671A JP 16667187 A JP16667187 A JP 16667187A JP S6411354 A JPS6411354 A JP S6411354A
- Authority
- JP
- Japan
- Prior art keywords
- wiring substrate
- sealing substance
- sealing
- glass
- sealed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
PURPOSE:To prevent a disconnection due to a temperature change and to obtain a sealing structure protected against a mechanical force from the outside by a method wherein an electrically connected part between divided substrates whose coefficient of thermal expansion differs from each other is covered with a gel-like sealing substance and a circumferential part of this sealing substance is sealed by using a hard-coating sealing substance. CONSTITUTION:A glass wiring substrate 2 where a photodetector 4 is mounted and a glass epoxy wiring substrate 3 where an IC 5 for driving use is mounted are placed on a support material 1; wiring parts for the IC 5 and the glass wiring substrate 2 are connected by a wire bonding operation using a gold wire 6; the divided wiring substrates are connected electrically. A part where the glass wiring substrate 2 comes into contact with the glass epoxy wiring substrate 3 is sealed by using a gel-like silicone risen as a first sealing substance 7 for a part which comes into direct contact with the wire 6 which is used for electrical connection. The surface of this sealing substance 7 is sealed by using a second sealing substance 8 composed of a hard-coating sealing material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62166671A JPS6411354A (en) | 1987-07-03 | 1987-07-03 | Sealing structure of electronic circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62166671A JPS6411354A (en) | 1987-07-03 | 1987-07-03 | Sealing structure of electronic circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6411354A true JPS6411354A (en) | 1989-01-13 |
Family
ID=15835567
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62166671A Pending JPS6411354A (en) | 1987-07-03 | 1987-07-03 | Sealing structure of electronic circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6411354A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0355898A (en) * | 1989-07-25 | 1991-03-11 | Matsushita Electric Ind Co Ltd | Electronic circuit module |
JPH0469958A (en) * | 1990-07-10 | 1992-03-05 | Mitsubishi Electric Corp | Semiconductor device |
JPH04137753A (en) * | 1990-09-28 | 1992-05-12 | Sanyo Electric Co Ltd | High frequency semiconductor device |
US5379186A (en) * | 1993-07-06 | 1995-01-03 | Motorola, Inc. | Encapsulated electronic component having a heat diffusing layer |
JPH0725521U (en) * | 1993-10-14 | 1995-05-12 | サンアロー株式会社 | Push button structure of push button switch |
JP2011210759A (en) * | 2010-03-29 | 2011-10-20 | Casio Computer Co Ltd | Semiconductor device and method of manufacturing the same |
JP2014188683A (en) * | 2013-03-26 | 2014-10-06 | Toshiba Hokuto Electronics Corp | Thermal print head and method for producing the same |
-
1987
- 1987-07-03 JP JP62166671A patent/JPS6411354A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0355898A (en) * | 1989-07-25 | 1991-03-11 | Matsushita Electric Ind Co Ltd | Electronic circuit module |
JPH0469958A (en) * | 1990-07-10 | 1992-03-05 | Mitsubishi Electric Corp | Semiconductor device |
JPH04137753A (en) * | 1990-09-28 | 1992-05-12 | Sanyo Electric Co Ltd | High frequency semiconductor device |
US5379186A (en) * | 1993-07-06 | 1995-01-03 | Motorola, Inc. | Encapsulated electronic component having a heat diffusing layer |
JPH0725521U (en) * | 1993-10-14 | 1995-05-12 | サンアロー株式会社 | Push button structure of push button switch |
JP2011210759A (en) * | 2010-03-29 | 2011-10-20 | Casio Computer Co Ltd | Semiconductor device and method of manufacturing the same |
JP2014188683A (en) * | 2013-03-26 | 2014-10-06 | Toshiba Hokuto Electronics Corp | Thermal print head and method for producing the same |
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