JPS6396974A - Ferromagnetic magnetoresistance element - Google Patents
Ferromagnetic magnetoresistance elementInfo
- Publication number
- JPS6396974A JPS6396974A JP61242767A JP24276786A JPS6396974A JP S6396974 A JPS6396974 A JP S6396974A JP 61242767 A JP61242767 A JP 61242767A JP 24276786 A JP24276786 A JP 24276786A JP S6396974 A JPS6396974 A JP S6396974A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- thin film
- magnetoresistive
- ferromagnetic
- small
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005294 ferromagnetic effect Effects 0.000 title claims abstract description 8
- 239000010409 thin film Substances 0.000 claims abstract description 14
- 230000005291 magnetic effect Effects 0.000 abstract description 28
- 230000000694 effects Effects 0.000 abstract description 13
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 229910017709 Ni Co Inorganic materials 0.000 abstract description 4
- 229910003267 Ni-Co Inorganic materials 0.000 abstract description 4
- 229910003262 Ni‐Co Inorganic materials 0.000 abstract description 4
- 229910003271 Ni-Fe Inorganic materials 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 238000010030 laminating Methods 0.000 abstract description 2
- 230000015654 memory Effects 0.000 abstract description 2
- 229920006395 saturated elastomer Polymers 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000008188 pellet Substances 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Hall/Mr Elements (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は、磁気抵抗効果の大伊い強磁性磁気抵抗素子
に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a ferromagnetic magnetoresistive element with a large magnetoresistive effect.
（従来の技術と問題点）
磁気抵抗素子を構成する材料としては、たとえば、Ｎｉ
−Ｃｏ系、Ｎｉ−Ｆｅ系のものが知られている。(Prior art and problems) Materials constituting the magnetoresistive element include, for example, Ni.
-Co-based and Ni-Fe-based materials are known.
しかしながら、前者のものは、磁気抵抗効果が５〜６％
゛と大゛きいものの、飽和磁界が大芳いため、低磁界に
おける感度に開運があフた。また、後者のものは、飽和
磁界は小さいものの、磁気抵抗効果が３〜４％と小きい
ため、磁気抵抗効果に基づく出力が小きかった。However, the former has a magnetoresistive effect of 5-6%
Although it was very large, the saturation magnetic field was large, so the sensitivity at low magnetic fields was unlucky. Furthermore, although the saturation magnetic field was small in the latter case, the magnetoresistive effect was as small as 3 to 4%, so the output based on the magnetoresistive effect was small.
このほかに、軟磁性薄膜の保磁力、異方性磁界を低下さ
せるために、回転磁界中あるいは交番磁界中での成膜や
熱処理、または磁気抵抗に近接きせて軟磁性膜を作るな
どの方法がある。しかしながら、これらの方法は工程、
装置などが複雑となり、特性の制譚の困難性、コスト貰
などの点で問題がある。In addition, in order to reduce the coercive force and anisotropy magnetic field of a soft magnetic thin film, methods such as film formation or heat treatment in a rotating magnetic field or alternating magnetic field, or making a soft magnetic film close to a magnetic resistance are available. There is. However, these methods require steps,
The equipment becomes complicated, and there are problems in terms of difficulty in establishing the characteristics, cost, etc.
（発明の目的）
したがフて、この発明は飽和磁界が小きく、従来のＮｉ
−Ｆｅ系のみの磁気抵抗素子にくらべて磁気抵抗効果の
大きい強磁性磁気抵抗効果素子を提供することを目的と
する。(Purpose of the invention) Therefore, this invention has a small saturation magnetic field, and the conventional Ni
An object of the present invention is to provide a ferromagnetic magnetoresistive element having a larger magnetoresistive effect than a -Fe-based magnetoresistive element.
（発明め構成）
この発明にかかる磁気抵抗抵抗効果素子は、Ｎｉ−Ｃｏ
系薄膜とＮｉ−Ｆｅ系薄膜とを積層し、全体の保磁力を
低下きせるとともに、低磁界における感度を向上きせた
ものである。(Inventive configuration) The magnetoresistive element according to the present invention is made of Ni-Co
By laminating a Ni--Fe based thin film and a Ni--Fe based thin film, the overall coercive force is lowered and the sensitivity in low magnetic fields is improved.
（発明の効果）
この発明により得られる強磁性磁気抵抗効果素子は、Ｎ
ｉ−Ｃｏ系薄膜とＮｉ−Ｆｅ系薄膜との積層構造よりな
るため、磁気抵抗効果が大きく、また飽和磁界も太きた
め、低磁界における感度の悪いというＮｉ−Ｃｏ系薄膜
の欠点を解消で伊ることになり、全体の飽和磁界を低下
させて低磁界における感度を向上させることができる。(Effect of the invention) The ferromagnetic magnetoresistive element obtained by this invention has N
Since it has a laminated structure of an i-Co thin film and a Ni-Fe thin film, it has a large magnetoresistive effect and a large saturation magnetic field, which eliminates the drawback of Ni-Co thin films such as poor sensitivity in low magnetic fields. Therefore, the overall saturation magnetic field can be lowered and the sensitivity in low magnetic fields can be improved.
この発明にかかる強磁性磁気抵抗効果素子はＭＲ磁気ヘ
ッド、エンコーダ用センサ、磁気バブルメモリなどに有
効なものである。The ferromagnetic magnetoresistive element according to the present invention is effective for MR magnetic heads, encoder sensors, magnetic bubble memories, and the like.
（実施例） 以下、この発明を実施例に従って詳細に説明する。(Example) Hereinafter, this invention will be explained in detail according to examples.
実施例１
ガラス基板を２８０℃に加熱し、真空槽２×１Ｏ−６Ｔ
ｏｒｒ以下に排気し、下記に示す条件で磁気抵抗層を電
子ビーム蒸着法で形成した。Example 1 A glass substrate was heated to 280°C and placed in a vacuum chamber of 2×1O-6T.
The magnetoresistive layer was formed by electron beam evaporation under the following conditions.
（１）第１層の形成
蒸発源 ：Ｎｉ９２ｗｔ％−Ｆｅ８ｗｔ％のベレット
、純度９９．９％
加速電圧 ＝ ８Ｋｖ
入力電流 ：４００ｍＡ
蒸着時間 ：３０秒
膜厚 ： ３００Ａ
（２）第２層の形成
蒸発源 ：Ｎｉ９２ｗｔ％−Ｃｏ３０ｗｔ％のベレッ
ト、純度９９．９％
加速電圧 ： ８Ｋｖ
入力電流 ：５００ｍＡ
蒸着時間 ＝７分間
膜厚 ： ２０００Ａ
上記した条件で形成して得られた磁気抵抗薄膜を第１図
に示すように、両端部を残して１１０ｍｍＸ４０ｕの線
形状にエツチング処理した。(1) Formation of the first layer Evaporation source: Ni92wt%-Fe8wt% pellet, purity 99.9% Accelerating voltage = 8Kv Input current: 400mA Evaporation time: 30 seconds Film thickness: 300A (2) Formation of the second layer Evaporation Source: Ni92wt%-Co30wt% pellet, purity 99.9% Acceleration voltage: 8Kv Input current: 500mA Vapor deposition time = 7 minutes Film thickness: 2000A The magnetoresistive thin film formed under the above conditions is shown in Figure 1. As shown, it was etched into a linear shape of 110 mm x 40 u, leaving both ends intact.
得られた試料の磁気抵抗効果および飽和磁界を１０００
ｅの交流磁界中において２．ＯｍＡの定電流で測定した
ところ、以下に示す結果が得られた。The magnetoresistance effect and saturation magnetic field of the obtained sample were adjusted to 1000
2. In an alternating magnetic field of e. When measured at a constant current of OmA, the following results were obtained.
磁気抵抗効果ΔＲ／Ｒ＝４．９７％
飽和磁界Ｈｓ＝５００ｅ
実施例２
ガラス基板を３００℃に加熱し、真空槽２×１０ ””
Ｔｏｒｒ以下に排気し、下記に示す条件で第１層の磁気
抵抗層を電子ビーム蒸着法で形成した。Magnetoresistive effect ΔR/R=4.97% Saturation magnetic field Hs=500e Example 2 A glass substrate was heated to 300°C and placed in a vacuum chamber of 2×10
The atmosphere was evacuated to below Torr, and a first magnetoresistive layer was formed by electron beam evaporation under the conditions shown below.
（１）第１ＦＷの形成
蒸発源 ：Ｎｉ ７５ｗｔ％−Ｃｏ２５ｗｔ％のベレ
ット、°純度９９．９％
加速電圧 ： ８Ｋｖ
入力電流 ：４００ｍＡ
蒸着時間 ：４分間
膜厚 ： １００ＯＡ
第１層を形成したのち、基板を１００℃に冷却し、その
のち次の条−件で磁気抵抗層を電子ビーム蒸着法で形成
した。(1) Formation of the first FW Evaporation source: Ni 75wt%-Co25wt% pellet, purity 99.9% Accelerating voltage: 8Kv Input current: 400mA Evaporation time: 4 minutes Film thickness: 100OA After forming the first layer, The substrate was cooled to 100°C, and then a magnetoresistive layer was formed by electron beam evaporation under the following conditions.
（２）第２層の形成
蒸発源 ： Ｎ ｉ ８５ ｗ ｔ％−Ｆｅ１５ｗｔ
％のベレット、純度９９．９％
加速電圧 ： ８Ｋｖ
入力電流 ：４００ｍＡ −
蒸着時間 ＝２０秒
膜厚 ： ２００Ａ
上記した条件で形成して得られた磁気抵抗薄膜を実施例
１と同様にエツチング処理し、両端部を残して１０ｍｍ
Ｘ２０μｍの線形状とした。(2) Formation of second layer Evaporation source: Ni 85 wt%-Fe15wt
% pellet, purity 99.9% Acceleration voltage: 8 Kv Input current: 400 mA - Vapor deposition time = 20 seconds Film thickness: 200 A The magnetoresistive thin film obtained by forming under the above conditions was etched in the same manner as in Example 1. , 10mm leaving both ends
It was made into a linear shape of x20 μm.
得られた試料の磁気抵抗効果および飽和磁界をＬＯＯＯ
ｅの交流磁界中において２．ＯｍＡの電流値で測定した
ところ、以下に示す結果が得られた。The magnetoresistance effect and saturation magnetic field of the obtained sample are LOOO
2. In an alternating magnetic field of e. When measured at a current value of OmA, the following results were obtained.
磁気抵抗効果ΔＲ／Ｒ＝５．０７％ 飽和磁界Ｈｓ＝６００ｅMagnetoresistive effect ΔR/R=5.07% Saturation magnetic field Hs=600e
第１図はこの発明にかかる強磁性磁気抵抗素子の特性を
測定するための試料の平面図である。FIG. 1 is a plan view of a sample for measuring the characteristics of a ferromagnetic magnetoresistive element according to the present invention.
Claims (1)
ることを特徴とする強磁性磁気抵抗素子。A ferromagnetic magnetoresistive element characterized by having a laminated structure of a Ni--Co thin film and a Ni--Fe thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61242767A JPS6396974A (en) | 1986-10-13 | 1986-10-13 | Ferromagnetic magnetoresistance element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61242767A JPS6396974A (en) | 1986-10-13 | 1986-10-13 | Ferromagnetic magnetoresistance element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6396974A true JPS6396974A (en) | 1988-04-27 |
Family
ID=17093972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61242767A Pending JPS6396974A (en) | 1986-10-13 | 1986-10-13 | Ferromagnetic magnetoresistance element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6396974A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111740010A (en) * | 2020-06-18 | 2020-10-02 | 电子科技大学 | Anisotropic magneto-resistance based on multilayer magnetic composite structure |
-
1986
- 1986-10-13 JP JP61242767A patent/JPS6396974A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111740010A (en) * | 2020-06-18 | 2020-10-02 | 电子科技大学 | Anisotropic magneto-resistance based on multilayer magnetic composite structure |
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