JPS6396908A - Device for laser-beam irradiation - Google Patents
Device for laser-beam irradiationInfo
- Publication number
- JPS6396908A JPS6396908A JP24342986A JP24342986A JPS6396908A JP S6396908 A JPS6396908 A JP S6396908A JP 24342986 A JP24342986 A JP 24342986A JP 24342986 A JP24342986 A JP 24342986A JP S6396908 A JPS6396908 A JP S6396908A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- magnet
- semiconductor
- holder
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001678 irradiating effect Effects 0.000 claims 1
- 229910052573 porcelain Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 19
- 239000013078 crystal Substances 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 7
- 238000001953 recrystallisation Methods 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052786 argon Inorganic materials 0.000 abstract description 2
- 229910002804 graphite Inorganic materials 0.000 abstract description 2
- 239000010439 graphite Substances 0.000 abstract description 2
- 239000000155 melt Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、試料に磁場をかけなからレーザ光を照射する
レーザ光照射装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a laser beam irradiation device that irradiates a sample with laser light without applying a magnetic field to the sample.
従来の技術
従来、レーザ光照射装置は、たとえば非晶質絶縁基板上
のシリｊン層即ち８０ Ｉ （Ｓｅｍｉｃｏｎｄｕｃｔ
ｏｒＯｎ Ｉｎ５ｕｌａｔｏｒ ）の溶融再結晶化技術
に用いられている。このようなＳＯＩ再結晶化層を高品
質に形成するために試料構造として島構造、反射防止膜
構造、シード構造等多くの改良がなされるとともに、デ
ュアルレーザビーム法やスプリットビーム法等レーザビ
ームのエネルギー分布の改良も精力的になされている〔
古川靜二部９日経マイクロデバイス、創刊号、Ｐ、Ｐ、
１７５−１９２ 。2. Description of the Related Art Conventionally, a laser beam irradiation device has been used to irradiate a silicon layer on an amorphous insulating substrate, that is, an 80 I (semiconductor)
orOn In5ulator) is used in the melt recrystallization technology. In order to form such a high-quality SOI recrystallized layer, many improvements have been made to the sample structure, such as an island structure, an anti-reflection film structure, and a seed structure. Efforts are also being made to improve energy distribution [
Seiji Furukawa 9 Nikkei Microdevices, first issue, P, P,
175-192.
１９８６年７月〕りこの結果、最近では、かなシ高品質
のＳＯＩのシリコン結晶が得られるようになってきてい
る。July 1986] As a result of this process, recently it has become possible to obtain SOI silicon crystals of very high quality.
発明が解決しようとする問題点
しかしながら、第２図に示すようにレーザ照射により再
結晶化したＳＯＩ層には、第２図すに示すように、結晶
粒界８ムや不純物の偏析８Ｂさらに表面の凹凸８Ｃ等の
結晶欠陥が未だ多く存在する。４はレーザ光、６は非晶
質基板、６ムは非晶質半導体層、６Ｂはレーザ光の照射
部、６Ｃは再結晶化された半導体層である。このような
結晶欠陥を含んだ８０Ｉ半導体層に形成されたトランジ
スタ等のデバイスでは、リーク電流の増大や、移動度、
閾値電圧等のバラツキの増大をきたし、高性能のＬ８Ｉ
ｔ得るためには問題となる。したがって、高晶質のＳＯ
Ｉ半導体を得るための新たな工夫が必要である。Problems to be Solved by the Invention However, as shown in Figure 2, the SOI layer recrystallized by laser irradiation has crystal grain boundaries, impurity segregation, and the surface of the SOI layer. There are still many crystal defects such as unevenness 8C. 4 is a laser beam, 6 is an amorphous substrate, 6mm is an amorphous semiconductor layer, 6B is a laser beam irradiation part, and 6C is a recrystallized semiconductor layer. Devices such as transistors formed in 80I semiconductor layers containing such crystal defects may suffer from increased leakage current, mobility,
This results in increased variations in threshold voltage, etc., and high performance L8I
It becomes a problem to obtain t. Therefore, highly crystalline SO
New ideas are needed to obtain I semiconductors.
前記問題点の原因の主な要因の一つとして、レーザ光照
射により溶融したＳＯＩの半導体層は、熱の不均一分布
のために対流をおこし、複雑な状態になっていると考え
られ、レーザ光照射が終了し、固化するとき、溶融状態
がそのまま凍結されその結果、ＳＯＩ再結晶化層には種
々の結照欠陥が導入されてしまうものと思われる。この
ような熱による融液の対流の防止のために、チョクラル
スキー法（Ｃ２法）による結晶成長において磁場をかけ
る方法が既に提案されており成果を上げていることは公
知である〔星金治他９日経エレクトロニクス、１９８０
年９月１６日号、 Ｐ、Ｐ、１５４−１７７）。しかし
、ＣＺ法は準平衡状態での結晶成長であり、レーザ照射
再結晶化のようなきわめて短時間の非平衡の結晶化とは
、大きなちがいが考えられる。One of the main causes of the above problem is that the SOI semiconductor layer melted by laser beam irradiation causes convection due to uneven distribution of heat, creating a complicated state. When the light irradiation ends and solidifies, the molten state is frozen as it is, and as a result, various glazing defects are thought to be introduced into the SOI recrystallized layer. In order to prevent convection of the melt due to heat, a method of applying a magnetic field during crystal growth using the Czochralski method (C2 method) has already been proposed and is known to have been successful. Osamu et al. 9 Nikkei Electronics, 1980
(September 16, issue, P, P, 154-177). However, the CZ method involves crystal growth in a quasi-equilibrium state, which is considered to be significantly different from very short-time non-equilibrium crystallization such as laser irradiation recrystallization.
問題点を解決するための手段
本発明は、前記問題点を解決するため゛に、磁場をかけ
なからレーザ照射して再結晶化するためのレーザ光照射
装置を提供するものである。Means for Solving the Problems In order to solve the above-mentioned problems, the present invention provides a laser beam irradiation device for recrystallization by laser irradiation without applying a magnetic field.
作用
レーザ照射再結晶化において、磁場により、溶融してい
る半導体の熱対流を防止して、安定な結晶成長を達成す
ることが可能となシ、結果として高品質のＳＯＩ半導体
結晶層を得ることができる。In working laser irradiation recrystallization, it is possible to prevent thermal convection of the molten semiconductor by a magnetic field and achieve stable crystal growth, resulting in a high quality SOI semiconductor crystal layer. Can be done.
実施例
以下に本発明の一実施例について第１図とともに説明す
る。EXAMPLE An example of the present invention will be described below with reference to FIG.
第１図は、本発明の一実施例に用いるレーザ光照射装置
の概念断面図である。試例ホルダー１はたとえば２次元
平面で可動のＸＹステージである。FIG. 1 is a conceptual cross-sectional view of a laser beam irradiation device used in an embodiment of the present invention. The sample holder 1 is, for example, an XY stage movable on a two-dimensional plane.
試料ホルダー１の上面にたとえばグラファイト系ででき
ている板状の磁石２人が設置されている。Two plate-shaped magnets made of graphite, for example, are installed on the top surface of the sample holder 1.
この試料ホルダー上の磁石２ム上に試料たとえば非晶質
基板Ｓ上に形成されているシリコン等の半導体層６が設
置され、さらにこの上に空間的に分離されて、もう一方
の板状磁石２Ｂがホルダー７にて設置されている。レー
ザ光源たとえばアルゴンイオンレーザの光４がたとえば
、数Ｗのパワーで適当にビームエネルギー形状で調整さ
れて、上部の磁石２Ｂを介して試料のＳＯＩの半導体層
６に矢印Ｘ方向に走査されて照射され、半導体層６は溶
融固化し再結晶化層となる。このとき上部磁石２Ｂはレ
ーザ光４が通過して試料６に照射されなくてはならない
ので、たとえば、メツシュ状につくられていればよい。A sample, for example, a semiconductor layer 6 made of silicon or the like formed on an amorphous substrate S is placed on the magnet 2 on the sample holder, and on top of this is placed another plate-shaped magnet that is spatially separated. 2B is installed with a holder 7. Light 4 from a laser light source, for example, an argon ion laser, has a power of several W and is appropriately adjusted in beam energy shape, and is scanned and irradiated onto the SOI semiconductor layer 6 of the sample in the direction of the arrow X through the upper magnet 2B. Then, the semiconductor layer 6 is melted and solidified to become a recrystallized layer. At this time, since the laser beam 4 must pass through the upper magnet 2B and be irradiated onto the sample 6, the upper magnet 2B may be formed into a mesh shape, for example.
もちろん、メツシュに限らず、レーザ光４が通過できれ
ばよいことは言うまでもない。さらに、上部磁石２Ｂと
試料ホルダー１上の磁石２人の間で形成される磁場の強
さは、たとえば、半導体層６が溶融して融液となったと
きの熱による撹乱を抑制するだけであれば、数１００ガ
ウス程度であればよいが、願わくば、融液の層流も抑え
るためには数１ ’ＯＯＯガウス程度あることが望まし
い。Of course, it goes without saying that the mesh is not limited to the mesh, and it is sufficient if the laser beam 4 can pass therethrough. Furthermore, the strength of the magnetic field formed between the upper magnet 2B and the two magnets on the sample holder 1 is sufficient to suppress the disturbance caused by heat when the semiconductor layer 6 melts into a melt, for example. If so, it may be on the order of several 100 Gauss, but preferably on the order of several 1'OOO Gauss in order to suppress the laminar flow of the melt.
発明の効果
以上のように本発明のレーザ光照射装置により形成した
ＳＯＩ構造の再結晶化半導体層は、レーザ照射により溶
融状態になった半導体層の熱による対流が抑制され、静
かな固化を生ぜしめることが可能となり、きわめて高品
質となるものであり、ＬＳＩレベルの高密度集積素子の
ためのＳＯＩ基板形成にきわめて有益である。Effects of the Invention As described above, in the recrystallized semiconductor layer of the SOI structure formed by the laser beam irradiation apparatus of the present invention, convection due to the heat of the semiconductor layer melted by laser irradiation is suppressed, and quiet solidification occurs. This makes it possible to achieve extremely high quality, and is extremely useful for forming SOI substrates for high-density integrated devices at the LSI level.
第１図は本発明の一実施例のレーザ光照射装置の原理を
説明するための断面図、第２図は従来のレーザ照射再結
晶化において再結晶化層に発生する結晶欠陥の導入のさ
れ方を説明する断面図である。
１・・・・・・試料ホルダー、２人、２Ｂ・・・・・・
磁石、４・・・・・・レーザ光、６・・・・・・ＳＯＩ
半導体層。FIG. 1 is a cross-sectional view for explaining the principle of a laser beam irradiation device according to an embodiment of the present invention, and FIG. 2 is a diagram showing how crystal defects are introduced into a recrystallized layer in conventional laser irradiation recrystallization. FIG. 1...Sample holder, 2 people, 2B...
Magnet, 4... Laser light, 6... SOI
semiconductor layer.
Claims (1)
せしめるレーザ光照射手段と、前記試料に磁場をかける
ための磁器発生手段を備えてなるレーザ光照射装置。A laser beam irradiation device comprising a support means for installing and supporting a sample, a laser beam irradiation means for irradiating the sample, and a porcelain generating means for applying a magnetic field to the sample.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24342986A JPS6396908A (en) | 1986-10-14 | 1986-10-14 | Device for laser-beam irradiation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24342986A JPS6396908A (en) | 1986-10-14 | 1986-10-14 | Device for laser-beam irradiation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6396908A true JPS6396908A (en) | 1988-04-27 |
Family
ID=17103739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24342986A Pending JPS6396908A (en) | 1986-10-14 | 1986-10-14 | Device for laser-beam irradiation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6396908A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004153232A (en) * | 2002-10-30 | 2004-05-27 | Sharp Corp | Method for manufacturing semiconductor element and semiconductor element manufactured by the method |
| US7067403B2 (en) * | 2002-11-08 | 2006-06-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device that includes adding noble gas to a semiconductor film and then irradiating the semiconductor film with laser light in the presence of a magnetic field |
| US7160762B2 (en) | 2002-11-08 | 2007-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device, semiconductor device, and laser irradiation apparatus |
| US8105445B2 (en) | 2003-10-23 | 2012-01-31 | International Business Machines Corporation | Method and apparatus for fast and local anneal of anti-ferromagnetic (AF) exchange-biased magnetic stacks |
| CN103769752A (en) * | 2012-10-22 | 2014-05-07 | 三星泰科威株式会社 | Workbench used for laser drilling treatment and method for laser drilling |
-
1986
- 1986-10-14 JP JP24342986A patent/JPS6396908A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004153232A (en) * | 2002-10-30 | 2004-05-27 | Sharp Corp | Method for manufacturing semiconductor element and semiconductor element manufactured by the method |
| US7067403B2 (en) * | 2002-11-08 | 2006-06-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device that includes adding noble gas to a semiconductor film and then irradiating the semiconductor film with laser light in the presence of a magnetic field |
| US7160762B2 (en) | 2002-11-08 | 2007-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device, semiconductor device, and laser irradiation apparatus |
| US7585714B2 (en) | 2002-11-08 | 2009-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device, semiconductor device, and laser irradiation apparatus |
| US7629235B2 (en) | 2002-11-08 | 2009-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device that includes adding noble gas to a semiconductor film and then irradiating the semiconductor film with laser light in the presence of a magnetic field |
| US7842589B2 (en) | 2002-11-08 | 2010-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus with means for applying magnetic field |
| US8105445B2 (en) | 2003-10-23 | 2012-01-31 | International Business Machines Corporation | Method and apparatus for fast and local anneal of anti-ferromagnetic (AF) exchange-biased magnetic stacks |
| US8470092B2 (en) * | 2003-10-23 | 2013-06-25 | International Business Machines Corporation | Method and apparatus for fast and local anneal of anti-ferromagnetic (AF) exchange-biased magnetic stacks |
| CN103769752A (en) * | 2012-10-22 | 2014-05-07 | 三星泰科威株式会社 | Workbench used for laser drilling treatment and method for laser drilling |
| JP2014083595A (en) * | 2012-10-22 | 2014-05-12 | Samsung Techwin Co Ltd | Table for laser processing and laser processing method |
| KR20140068276A (en) * | 2012-10-22 | 2014-06-09 | 주식회사 엠디에스 | Support table for laser drilling process and method for laser drilling |
| CN103769752B (en) * | 2012-10-22 | 2016-12-28 | 海成帝爱斯株式会社 | The workbench processed for laser drill and method for drilling holes |
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