JPS6396715A - Magneto-resistance effect type thin film head - Google Patents
Magneto-resistance effect type thin film headInfo
- Publication number
- JPS6396715A JPS6396715A JP24182286A JP24182286A JPS6396715A JP S6396715 A JPS6396715 A JP S6396715A JP 24182286 A JP24182286 A JP 24182286A JP 24182286 A JP24182286 A JP 24182286A JP S6396715 A JPS6396715 A JP S6396715A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- magnetoresistive
- magneto
- thin film
- gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 19
- 230000000694 effects Effects 0.000 title abstract description 13
- 230000005291 magnetic effect Effects 0.000 claims abstract description 73
- 230000005415 magnetization Effects 0.000 claims abstract description 20
- 239000010408 film Substances 0.000 claims description 23
- 230000005294 ferromagnetic effect Effects 0.000 claims description 18
- 230000035699 permeability Effects 0.000 claims description 13
- 239000000696 magnetic material Substances 0.000 claims description 4
- 230000005330 Barkhausen effect Effects 0.000 abstract description 10
- 230000005381 magnetic domain Effects 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 3
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 12
- 239000004020 conductor Substances 0.000 description 8
- 230000004907 flux Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- 230000005374 Kerr effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、強磁性薄膜の磁気抵抗効果を応用した磁気抵
抗効果素子（以下ＭＲ素子と称す）を用いて、磁気記録
媒体に記録された信号の検出を行う磁気抵抗効果型薄膜
ヘッドに関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention provides a method for recording information on a magnetic recording medium using a magnetoresistive element (hereinafter referred to as an MR element) that applies the magnetoresistive effect of a ferromagnetic thin film. The present invention relates to a magnetoresistive thin film head that detects signals.
強磁性薄膜の磁気抵抗効果を応用した磁気抵抗効果型薄
膜ヘッド（以下ＭＲヘッドと称す）は、従来から多用さ
れている巻線型磁気へラドと比較して、多くの利点を有
することが知られている。Magnetoresistive thin film heads (hereinafter referred to as MR heads), which utilize the magnetoresistive effect of ferromagnetic thin films, are known to have many advantages over conventionally widely used wire-wound magnetic healds. ing.
例えば、ＭＲヘッドは、磁気記録媒体に記録された磁化
パターンから発生する信号磁界を受け、これをＭＲ素子
の抵抗変化に基づく電圧変化として取り出すものであっ
て、このため、磁気記録媒体の移送速度に依存すること
なく信号を再生することができる。従って、ＭＲヘッド
は、磁気記録媒体の移送速度の低い場合、巻線型の磁気
ヘッドよりも高出力の再生信号が得られるという利点を
有している。For example, an MR head receives a signal magnetic field generated from a magnetization pattern recorded on a magnetic recording medium and extracts this as a voltage change based on a resistance change of an MR element. It is possible to reproduce the signal without depending on the Therefore, the MR head has the advantage that a higher output reproduction signal can be obtained than a wire-wound magnetic head when the transport speed of the magnetic recording medium is low.
従来のＭＲヘッドには、ＭＲ素子部をテープ摺動面から
離して設け、磁気記録媒体にて発生した磁束をＭＲ素子
部まで導くための磁束導入路となるヨークを配してなる
所謂ヨークタイプＭＲヘッド（以下ＹＭＲヘッドと称す
）があり、このＹＭＲヘッドの方が、単体のＭＲ素子に
て薄膜磁気へフドを構成するよりも、信号の分解能の向
上やＭＲ素子の耐久性を向上するうえで有効である。そ
れ故、近年では、このＹＭＲヘッドが、固定ヘッド・デ
ィジタル・オーディオ用再生ヘッドとして注目されてい
る（第８回日本応用磁気学会学術講演概要集、１９８４
年、１４ＰＢ−１１ｒヨ一クタイプＭＲヘッドの再生特
性」参照）。Conventional MR heads are of the so-called yoke type, in which the MR element is located away from the tape sliding surface, and a yoke is arranged as a magnetic flux introduction path to guide the magnetic flux generated in the magnetic recording medium to the MR element. There is an MR head (hereinafter referred to as YMR head), and this YMR head improves signal resolution and durability of the MR element, compared to configuring a thin film magnetic head with a single MR element. is valid. Therefore, in recent years, this YMR head has attracted attention as a fixed head digital audio playback head (Summary of the 8th Academic Conference of Japan Society of Applied Magnetics, 1984
14PB-11r yoke type MR head (Reproduction characteristics).
しかしながら、上記従来のＹＭＲヘッド等では、ＭＲ素
子から得られる出力信号の中にＭＲ素子内部の磁化が不
連続に変化することに起因するバルクハウゼンノイズが
含まれており、このノイズが出力信号の処理を行う上で
極めて悪い影響を与える（上記の第８回日本応用磁気学
会学術講演概要集参照）。However, in the above-mentioned conventional YMR heads, etc., the output signal obtained from the MR element contains Barkhausen noise caused by discontinuous changes in the magnetization inside the MR element, and this noise causes the output signal to change. This has an extremely negative effect on processing (see the above-mentioned collection of summaries of the 8th Japanese Society of Applied Magnetics Conference).
そこで、上記バルクハウゼンノイズを抑制するために、
ＭＲ素子２６を単磁区化し、磁気記録媒□体の信号磁界
に対してＭＲ素子の磁化を回転モードによって変化させ
て、ＭＲ素子の再生出力信号にバルクハウゼンノイズが
含まれることのないようにするＹＭＲヘッドが先に提案
されている。このＹＭＲヘッドは、第３図及び第４図に
示すように、高ｉ！ｉ磁率磁性体基板２１の端面２１ａ
を磁気記録媒体３０との摺動面としている。この高透磁
率磁性体基板２１上には、磁気記録媒体３０にて発生し
た磁束を導くための磁路となる上側ヨーク２３が、上記
の端面２１ａと同一仮想平面内に端面を有し、かつ高透
磁率磁性体基板２１との間に所定幅のヘッドギャップ２
２を形成して設けられている。上側ヨーク２３における
高透磁率磁性体基板２１から離間して立ち上がった他端
部側には、所定幅のギャップ２４を介して、略同形をな
す上側ヨーク２５が対向して設けられている。ギャップ
２４の下方には、上記の上側ヨーク２３・２５と磁気的
に結合する磁気抵抗効果素子（以下ＭＲ素子と称す）２
６が、ギャップ２４の長さ方向をＭＲ素子２６の長手方
向として設けられている。Therefore, in order to suppress the Barkhausen noise mentioned above,
The MR element 26 is made into a single magnetic domain, and the magnetization of the MR element is changed according to the rotation mode with respect to the signal magnetic field of the magnetic recording medium □, so that Barkhausen noise is not included in the reproduced output signal of the MR element. YMR heads have been proposed earlier. As shown in FIGS. 3 and 4, this YMR head has a high i! i End face 21a of magnetic substrate 21
is used as a sliding surface with respect to the magnetic recording medium 30. On this high magnetic permeability magnetic substrate 21, an upper yoke 23 serving as a magnetic path for guiding the magnetic flux generated in the magnetic recording medium 30 has an end face in the same virtual plane as the end face 21a, and A head gap 2 having a predetermined width between the head gap 2 and the high magnetic permeability magnetic substrate 21
2. At the other end of the upper yoke 23 that stands apart from the high permeability magnetic substrate 21, an upper yoke 25 having substantially the same shape is provided to face the upper yoke 25 with a gap 24 having a predetermined width therebetween. Below the gap 24 is a magnetoresistive element (hereinafter referred to as MR element) 2 which is magnetically coupled to the upper yokes 23 and 25.
6 is provided with the length direction of the gap 24 as the longitudinal direction of the MR element 26.
ＭＲ素子２６の長手方向の両端部には、高い保磁力を有
する強磁性膜２７・２７を介して、リード導体２８・２
８が接続されている。また、上記ＭＲ素子２６の下方に
は、ギャップ２４の長さ方向にバイアス導体２９が配設
されている。このような構造により、上記の強磁性膜２
７・２７とＭＲ素子２６とを強磁***換結合させ、ＭＲ
素子２６の長手方向に弱磁界を印加し、これによって、
ＭＲ素子２６を単磁区状態として、バルクハウゼンノイ
ズを抑制するものである。Lead conductors 28 and 2 are connected to both longitudinal ends of the MR element 26 via ferromagnetic films 27 and 27 having high coercive force.
8 are connected. Further, below the MR element 26, a bias conductor 29 is arranged in the length direction of the gap 24. With such a structure, the above ferromagnetic film 2
7.27 and the MR element 26 are ferromagnetically exchange coupled, and the MR
A weak magnetic field is applied in the longitudinal direction of the element 26, thereby
The MR element 26 is placed in a single magnetic domain state to suppress Barkhausen noise.
なお、上記の如＜ＭＲ素子２６を配設したＹＭＲヘッド
においては、ＭＲ素子２６を作製する際に、その磁化容
易軸をトラック幅方向、即ち長手方向に設定している。In the YMR head in which the MR element 26 is arranged as described above, when the MR element 26 is manufactured, its axis of easy magnetization is set in the track width direction, that is, in the longitudinal direction.
ところが、上記の構造では、第５図に示すように、ＭＲ
素子２６に印加される弱磁界の大きさがＭＲ素子２６に
おける上記強磁性膜２７・２７からの距離によって異な
ることになる。ここで、同図のグラフは、ＭＲ素子２６
の磁化が飽和した磁場Ｈｓの位置変化を示しており、こ
れはＭＲ素子２６のトラック方向におけるカー効果を利
用して測定したものである。従って、強磁性膜２７・２
７による単磁区化の効果は、ＭＲ素子２６の両端近傍の
範囲に限られ、ＭＲ素子２６の中間部ではほとんど上記
の効果がみられない。このため、例えば第３図のような
構造のＹＭＲヘッドにおいて、磁気記録媒体３０等のト
ラック幅が広くなり、これにつれて上側ヨーク２３及び
２５の幅、即ち強磁性膜２７・２７の距離が長くなると
、強磁性膜２７・２７の影響を受けないＭＲ素子２６の
部分が広くなる。従って、ＭＲ素子２６を単磁区状態に
することが益々困難になり、バルクハウゼンノイズを抑
制できなくなってしまうという問題があった。However, in the above structure, as shown in FIG.
The magnitude of the weak magnetic field applied to the element 26 differs depending on the distance from the ferromagnetic films 27 in the MR element 26. Here, the graph in the figure shows the MR element 26
The figure shows a change in the position of the magnetic field Hs in which the magnetization of is saturated, and this is measured using the Kerr effect in the track direction of the MR element 26. Therefore, the ferromagnetic film 27.2
The effect of forming a single magnetic domain due to No. 7 is limited to a range near both ends of the MR element 26, and the above effect is hardly seen in the middle part of the MR element 26. For this reason, for example, in a YMR head having a structure as shown in FIG. 3, the track width of the magnetic recording medium 30 etc. becomes wider, and as a result, the width of the upper yokes 23 and 25, that is, the distance between the ferromagnetic films 27 and 27 becomes longer. , the portion of the MR element 26 that is not affected by the ferromagnetic films 27 becomes wider. Therefore, it becomes increasingly difficult to bring the MR element 26 into a single-domain state, and there is a problem in that Barkhausen noise cannot be suppressed.
本発明の磁気抵抗効果型薄膜ヘッドは、上記の問題点を
解決するために、高透磁率磁性体上に、第１の磁気ヨー
クと、磁気抵抗効果素子と、第２の磁気ヨークとをこの
順に磁気的に結合させて配設し、上記磁気抵抗効果素子
の磁化容易軸方向の両端部に、高保磁力を有する強磁性
膜を設けた磁気抵抗効果型薄膜ヘッドにおいて、上記磁
気抵抗効果素子に、この磁気抵抗効果素子自体を折曲状
に形成して、磁化容易軸方向に複数の溝状凹部を並設し
たものである。In order to solve the above problems, the magnetoresistive thin film head of the present invention includes a first magnetic yoke, a magnetoresistive element, and a second magnetic yoke on a high permeability magnetic material. In a magnetoresistive thin film head in which a ferromagnetic film having a high coercive force is provided at both ends of the magnetoresistive element in the direction of the easy axis of magnetization, the magnetoresistive element is magnetically coupled to the magnetoresistive element. The magnetoresistive element itself is formed into a bent shape, and a plurality of groove-like recesses are arranged in parallel in the direction of the axis of easy magnetization.
上記の如＜、磁気抵抗効果素子に、磁化容易軸方向に複
数の溝状凹部を並設することにより、磁気抵抗効果素子
は、磁化容易軸方向の磁気異方性を有するようになる。As described above, by arranging a plurality of groove-like recesses in the direction of the easy axis of magnetization in the magnetoresistive element, the magnetoresistive element has magnetic anisotropy in the direction of the easy axis of magnetization.
この磁化容易軸方向の磁気異方性によって、上記小単位
の細長い磁気抵抗効果素子は、前記強磁性膜の弱磁界に
よって単磁区化され、これによってバラスハウゼンノイ
ズが抑制される。Due to this magnetic anisotropy in the easy axis direction, the small unit elongated magnetoresistive element is made into a single magnetic domain by the weak magnetic field of the ferromagnetic film, thereby suppressing Barasshausen noise.
本発明の一実施例を第１図及び第２図に基づいて説明す
れば、以下の通りである。An embodiment of the present invention will be described below based on FIGS. 1 and 2.
磁気抵抗効果型薄膜ヘッドは、高透磁率磁性体基＋ｆｆ
ｌ １の端面１ａを磁気記録媒体２との摺動面としてい
る。上記高透磁率磁性体基板１には、一般に、多結晶Ｎ
ｉ−Ｚｎフェライト基板や、単結晶又は多結晶Ｍ ｎ
−Ｚ ｎフェライト基板が用いられる。この高透磁率磁
性体基板１上には、磁気記録媒体２にて発生した磁束を
導く磁路を成す第１の磁気ヨークである上側ヨーク４が
、上記の端面１ａと同一仮想平面内に端面を有し、かつ
高透磁率磁性体基板１との間に所定幅のへラドギャップ
３を形成して設けられている。ヘッドギャップ３の幅は
、実際に使用される記録波長が最小０．５μｍ程度であ
るので、０．２〜０．３μｍ程度に設定されている。上
側ヨーク４の他端部は、高透磁率磁性体基板１から離間
して立ち上がっており、この他端部側には、所定幅のギ
ャップ５を介して、略同形を成す上側ヨーク６が対向し
て設けられている。The magnetoresistive thin film head has a high magnetic permeability magnetic base +ff
The end face 1a of l1 is used as a sliding surface with respect to the magnetic recording medium 2. The high permeability magnetic substrate 1 generally includes polycrystalline N
i-Zn ferrite substrate, single crystal or polycrystal M n
-Zn ferrite substrate is used. On this high magnetic permeability magnetic substrate 1, an upper yoke 4, which is a first magnetic yoke forming a magnetic path for guiding the magnetic flux generated in the magnetic recording medium 2, has an end face in the same virtual plane as the end face 1a. , and is provided with a helad gap 3 of a predetermined width formed between it and the high magnetic permeability magnetic substrate 1 . The width of the head gap 3 is set to about 0.2 to 0.3 μm since the minimum recording wavelength actually used is about 0.5 μm. The other end of the upper yoke 4 stands apart from the high permeability magnetic substrate 1, and an upper yoke 6 having substantially the same shape faces the other end with a gap 5 of a predetermined width interposed therebetween. It is provided.
上側ヨーク４・６は、通常０．５〜４．０μｍ程度の膜
厚のパーマロイ膜にて作製される。ギャップ５の下方に
は、上記ギャップ５の長さ方向に断面矩形の溝を有する
ＭＲ素子形成基材８が設けられており、このＭＲ素子形
成基材８の表面には、上記の上側ヨーク４・６と磁気的
に結合する磁気抵抗効果素子（以下ＭＲ素子と称す）７
が成膜されている。従って、ＭＲ素子７は、ギャップ５
の長さ方向が長手方向となると共に、ＭＲ素子７自体が
折曲して形成されることにより、磁化容易軸方向に複数
の溝状凹部７ａを有することになる。また、ＭＲ素子７
は、後述のリード導体１０・１０を通じてトラック幅方
向にセンス電流Ｉ３を流すことにより、磁気記録媒体２
から発生する信号磁界をＭＲ素子７両端の電圧変化に変
換するものである。The upper yokes 4 and 6 are usually made of a permalloy film having a thickness of about 0.5 to 4.0 μm. An MR element forming base material 8 having a groove with a rectangular cross section in the length direction of the gap 5 is provided below the gap 5, and the upper yoke 4 is provided on the surface of this MR element forming base material 8.・Magnetoresistive element (hereinafter referred to as MR element) 7 that is magnetically coupled with 6
is deposited. Therefore, the MR element 7 has the gap 5
Since the length direction is the longitudinal direction and the MR element 7 itself is formed by being bent, it has a plurality of groove-like recesses 7a in the direction of the axis of easy magnetization. In addition, the MR element 7
By flowing a sense current I3 in the track width direction through lead conductors 10, which will be described later, the magnetic recording medium 2 is
This converts the signal magnetic field generated from the MR element 7 into a voltage change across the MR element 7.
上記ＭＲ素子７の長手方向両端部の上面には、強磁性膜
９・９が形成され、両弾磁性膜９・９上には、リード導
体ｌＯ・１０が接続されている。強磁性膜９・９は、バ
ルクハウゼンノイズを抑制するために設けられる良好な
導電性と高保磁力を有する膜であって、Ｃｏ−ＰＳＮｉ
−Ｃｏ、或いはＮ１−Ｃｏ−Ｐ等にて作製され、膜厚は
１．０００〜２．０００人である。リード導体１０・１
０は、Ａｌ−Ｃｕの膜にて作製されており、膜厚は１，
０００〜２．０００人である。また、上記ＭＲ素子７の
下方には、上記ギャップ５の長さ方向にバイアス導体１
１が配設されている。バイアス導体１１は１，６４！−
Ｃｕから成り、ＭＲ素子７にバイアス磁界を印加するた
めに配置されている。また、バイアス導体１１は、バイ
アス磁場発生用の電流■。Ferromagnetic films 9 are formed on the upper surfaces of both longitudinal ends of the MR element 7, and lead conductors 10 are connected to both elastic magnetic films 9 and 9. The ferromagnetic films 9 are films having good conductivity and high coercive force and are provided to suppress Barkhausen noise, and are made of Co-PSNi.
-Co, N1-Co-P, etc., and has a film thickness of 1.000 to 2.000 mm. Lead conductor 10/1
0 is made of an Al-Cu film, and the film thickness is 1,
000 to 2,000 people. Further, a bias conductor 1 is provided below the MR element 7 in the length direction of the gap 5.
1 is provided. Bias conductor 11 is 1,64! −
It is made of Cu and is arranged to apply a bias magnetic field to the MR element 7. In addition, the bias conductor 11 carries a current ■ for generating a bias magnetic field.
が流れることにより、ＭＲ素子７に所要のバイアス磁場
を与え、ＭＲ素子７の動作点を線形性の良好な点に移動
させている。By flowing, a required bias magnetic field is applied to the MR element 7, and the operating point of the MR element 7 is moved to a point with good linearity.
上記の構成において、本磁気抵抗効果型薄膜ヘッドでは
、第１図に示すように、上記ギャップ５の長さ方向、即
ちトラック幅方向に複数の溝が形成されたＭＲ素子形成
基材８上の表面に成膜されているため、ＭＲ素子７が溝
状凹部７ａを存し、実質的に複数の細いストライプ状に
分割された状態になる。このため、溝状凹部７ａの幅と
長さの比で決定される形状磁気異方性を有することにな
り、強磁性膜９・９からの磁界がストライブ状の個々の
ＭＲ素子にあっては、前記第５図に実線で示した曲線が
全体に異方性磁界ＨＫ分だけ上側に押し上げられるよう
に、全体が一定の弱磁界に磁化されることになる。従っ
て、ＭＲ素子７の磁化状態は、その両端にて強磁性膜９
の磁化方向に規制され、中央部にて形状磁気異方性によ
って磁化の向きが規制されるため、ＭＲ素子７は単磁区
状態となる。これにより、上記ＭＲ素子７では、より効
果的にバルクハウゼンノイズを抑制することができる。In the above structure, in the present magnetoresistive thin film head, as shown in FIG. Since the film is formed on the surface, the MR element 7 has groove-like recesses 7a, and is substantially divided into a plurality of thin stripes. Therefore, it has shape magnetic anisotropy determined by the ratio of the width and length of the groove-like recess 7a, and the magnetic field from the ferromagnetic films 9 is applied to each strip-shaped MR element. The whole is magnetized by a constant weak magnetic field so that the curve shown by the solid line in FIG. 5 is pushed upward by the anisotropic magnetic field HK. Therefore, the magnetization state of the MR element 7 is determined by the ferromagnetic film 9 at both ends.
Since the magnetization direction is regulated by the shape magnetic anisotropy in the central portion, the MR element 7 is in a single domain state. Thereby, the MR element 7 can suppress Barkhausen noise more effectively.
なお、ＭＲ素子７を複数のストライプ状に分割すること
によって生じる形状磁気異方性の大きさは、ストライプ
の幅と長さの比で決定される。この形状磁気異方性の大
きさは、あまりに大きくなると信号磁界に対する感度の
低下を招き、逆に小さすぎるとＭＲ素子７を安定な単磁
区状態とすることができなくなる。従って、実際のＹＭ
Ｒヘッドにおいては、そのトラック幅、即ちＭＲ素子７
の長さとＭＲ素子７の全幅とから決定される最適な形状
異方性が得られるようにＭＲ素子７を分割しなければな
らない。Note that the magnitude of shape magnetic anisotropy produced by dividing the MR element 7 into a plurality of stripes is determined by the ratio of the width and length of the stripes. If the magnitude of this shape magnetic anisotropy is too large, the sensitivity to the signal magnetic field will be reduced, and if it is too small, the MR element 7 cannot be brought into a stable single domain state. Therefore, the actual YM
In the R head, the track width, that is, the MR element 7
The MR element 7 must be divided so as to obtain the optimum shape anisotropy determined from the length of the MR element 7 and the total width of the MR element 7.
さらに、ＭＲ素子７を実質的に複数のストライプ状に分
割する方法として、本実施例では、ＭＲ素子７の溝状凹
部７ａを断面形状が矩形のものとしたが、この形状に限
定されることなく、例えば三角形等の他の形状であって
も良い。Furthermore, as a method of dividing the MR element 7 into a plurality of stripes, in this embodiment, the groove-like recess 7a of the MR element 7 is made to have a rectangular cross-sectional shape, but the shape is not limited to this. For example, other shapes such as a triangle may be used.
本発明の磁気抵抗効果型薄膜ヘッドは、以上のように、
高透磁率磁性体上に、第１の磁気ヨークと、磁気抵抗効
果素子と、第２の磁気ヨークとをこの順に磁気的に結合
させて配設し、上記磁気抵抗効果素子の磁化容易軸方向
の両端部に、高保磁力を有する強磁性膜を設けた磁気抵
抗効果型薄膜ヘッドにおいて、上記磁気抵抗効果素子に
、この磁気抵抗効果素子自体を折曲状に形成して、磁化
容易軸方向に複数の溝状凹部を並設した構成である。こ
れにより、上記磁気抵抗効果素子は、実質的に、複数の
ストライプ状となり、これらストライブ状の小単位の磁
気抵抗効果素子は、形状磁気異方性による単磁区化が可
能になるため、上記強磁性膜からの磁界が磁気抵抗効果
素子全体を単磁区化する。この磁気抵抗効果素子の単磁
区化によって、磁気抵抗効果型薄膜ヘッドでは、磁気抵
抗効果素子におけるバルクハウゼンノイズが抑制される
という効果を奏する。As described above, the magnetoresistive thin film head of the present invention has the following features:
A first magnetic yoke, a magnetoresistive element, and a second magnetic yoke are magnetically coupled and disposed in this order on a high magnetic permeability magnetic material, and the magnetoresistive element is arranged in the direction of the axis of easy magnetization of the magnetoresistive element. In a magnetoresistive thin film head in which a ferromagnetic film having a high coercive force is provided at both ends of the magnetoresistive element, the magnetoresistive element itself is formed into a bent shape, and the magnetoresistive element itself is bent in the direction of the axis of easy magnetization. It has a configuration in which a plurality of groove-like recesses are arranged in parallel. As a result, the above-mentioned magnetoresistive effect element substantially becomes a plurality of stripes, and these strip-like small units of magnetoresistive effect elements can be made into a single magnetic domain due to shape magnetic anisotropy. The magnetic field from the ferromagnetic film turns the entire magnetoresistive element into a single magnetic domain. By making the magnetoresistive element into a single domain, the magnetoresistive thin film head has the effect of suppressing Barkhausen noise in the magnetoresistive element.
第１図及び第２図は本発明の一実施例を示すものであっ
て、第１図は磁気抵抗効果型薄膜ヘッドを示す概略の縦
断面図、第２図は磁気抵抗効果型薄膜ヘッドを示す平面
図、第３図乃至第５図は従来例を示すものであって、第
３図は磁気抵抗効果型薄膜ヘッドを示す斜視図、第４図
は磁気抵抗効果型薄膜ヘッドを示す平面図、第５図は磁
気抵抗効果素子の各部における磁化が飽和する磁場の状
態を示すグラフである。
１は高透磁率磁性体基板（高透磁率磁性体）、４は上側
ヨーク（第１の磁気ヨーク）、６は上側ヨーク（第２の
磁気ヨーク）、７は磁気抵抗効果素子、７ａは溝状凹部
、８は磁気抵抗効果素子形成基材、９は強磁性膜である
。
特許出願人 シャープ 株式会社第１図
第２ｒ！：Ｉ1 and 2 show an embodiment of the present invention, in which FIG. 1 is a schematic vertical cross-sectional view showing a magnetoresistive thin film head, and FIG. 2 is a schematic longitudinal sectional view showing a magnetoresistive thin film head. 3 to 5 show conventional examples, FIG. 3 is a perspective view showing a magnetoresistive thin film head, and FIG. 4 is a plan view showing a magnetoresistive thin film head. , FIG. 5 is a graph showing the state of the magnetic field where the magnetization in each part of the magnetoresistive element is saturated. 1 is a high permeability magnetic substrate (high permeability magnetic material), 4 is an upper yoke (first magnetic yoke), 6 is an upper yoke (second magnetic yoke), 7 is a magnetoresistive element, and 7a is a groove 8 is a substrate for forming a magnetoresistive element, and 9 is a ferromagnetic film. Patent applicant Sharp Co., Ltd. Figure 1, 2r! :I
Claims (1)
抗効果素子と、第２の磁気ヨークとをこの順に磁気的に
結合させて配設し、上記磁気抵抗効果素子の磁化容易軸
方向の両端部に、高保磁力を有する強磁性膜を設けた磁
気抵抗効果型薄膜ヘッドにおいて、上記磁気抵抗効果素
子に、この磁気抵抗効果素子自体を折曲状に形成して、
磁化容易軸方向に複数の溝状凹部を並設したことを特徴
とする磁気抵抗効果型薄膜ヘッド。1. A first magnetic yoke, a magnetoresistive element, and a second magnetic yoke are magnetically coupled and disposed in this order on a high magnetic permeability magnetic material to facilitate magnetization of the magnetoresistive element. In a magnetoresistive thin film head in which a ferromagnetic film having a high coercive force is provided at both ends in the axial direction, the magnetoresistive element itself is formed in a bent shape,
A magnetoresistive thin film head characterized by having a plurality of groove-like recesses arranged in parallel in the direction of the axis of easy magnetization.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24182286A JPS6396715A (en) | 1986-10-09 | 1986-10-09 | Magneto-resistance effect type thin film head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24182286A JPS6396715A (en) | 1986-10-09 | 1986-10-09 | Magneto-resistance effect type thin film head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6396715A true JPS6396715A (en) | 1988-04-27 |
Family
ID=17080011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24182286A Pending JPS6396715A (en) | 1986-10-09 | 1986-10-09 | Magneto-resistance effect type thin film head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6396715A (en) |
-
1986
- 1986-10-09 JP JP24182286A patent/JPS6396715A/en active Pending
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