JPS6396627A - Preparation of liquid crystal device - Google Patents
Preparation of liquid crystal deviceInfo
- Publication number
- JPS6396627A JPS6396627A JP61243873A JP24387386A JPS6396627A JP S6396627 A JPS6396627 A JP S6396627A JP 61243873 A JP61243873 A JP 61243873A JP 24387386 A JP24387386 A JP 24387386A JP S6396627 A JPS6396627 A JP S6396627A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- leads
- electrodes
- chip
- substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 230000002093 peripheral effect Effects 0.000 claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 claims abstract description 27
- 239000011521 glass Substances 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 42
- 238000007689 inspection Methods 0.000 abstract description 11
- 230000008439 repair process Effects 0.000 abstract description 9
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052802 copper Inorganic materials 0.000 abstract description 3
- 239000010949 copper Substances 0.000 abstract description 3
- 230000002950 deficient Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1306—Details
- G02F1/1309—Repairing; Testing
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Liquid Crystal (AREA)
Abstract
Description
【発明の詳細な説明】
「産業上の利用分野」
本発明は、基板上に半導体集積回路素子とその他の素子
特に液晶表示装置とを一体化して設ける液晶装置の作製
方法に関する。DETAILED DESCRIPTION OF THE INVENTION "Field of Industrial Application" The present invention relates to a method for manufacturing a liquid crystal device in which a semiconductor integrated circuit element and other elements, particularly a liquid crystal display device, are integrally provided on a substrate.
本発明は半導体集積回路素子（以下ＩＣという）をチッ
プまたはそれと同様の構成で基板上に配設し、かつその
基板の他の部分には液晶パネルが設けられたチップ・オ
ン・サブストレイト（基板上にＩＣチップを装着して設
ける装置ＣＯ３ともいう）の作製方法に関する。The present invention relates to a chip-on-substrate (substrate) in which a semiconductor integrated circuit element (hereinafter referred to as an IC) is disposed on a substrate in the form of a chip or a similar structure, and a liquid crystal panel is provided on the other part of the substrate. This invention relates to a method for manufacturing a device (also referred to as CO3) on which an IC chip is mounted.
「従来技術」
従来、液晶装置の作製方法は、第２図に示す如く、一対
の基板、特にガラス基板上に透明導電膜のパターン即ち
透光性の電極およびリードを形成し、それぞれの基板上
の電極およびリードを互いに対抗させて貼り合わせる。``Prior Art'' Conventionally, as shown in FIG. 2, a method for manufacturing a liquid crystal device involves forming a pattern of a transparent conductive film, that is, a transparent electrode and a lead, on a pair of substrates, particularly a glass substrate, and then forming a pattern on each substrate. Attach the electrodes and leads of the electrodes to each other so as to oppose each other.
さらにその間に液晶を充填させることにより、液晶パネ
ルを構成させる。他方、ＰＰＣ（フレキシブルプリント
回路基板）またはＰＣＢ （プリント回路基板）上にフ
ラット・バッド・パンケージまたはＤＴＰ（デュアル・
インライン・パッケージ）構成をしたＩＣを装着する。Furthermore, by filling the space with liquid crystal, a liquid crystal panel is constructed. On the other hand, flat pad pancage or DTP (dual board) on PPC (flexible printed circuit board) or PCB (printed circuit board)
In-line package) IC is installed.
そしてこの液晶パネルとＦＰＣまたはＰＣＢとを互いに
半田付またはゴム・コネクタにより互いに連結するもの
であった。The liquid crystal panel and the FPC or PCB were connected to each other by soldering or rubber connectors.
そしてこれらに枠組みをし、検査、マーキイング、包装
をへて出荷している。即ち、パネルの作製、ＩＣを装着
したＦＰＣまたはＰＣＢの作製、さらにこれらを互いに
連結する工程を有するものである。These are then assembled into a framework, inspected, marked, and packaged before being shipped. That is, it includes the steps of manufacturing a panel, manufacturing an FPC or PCB with an IC mounted thereon, and further connecting these to each other.
換言すれば液晶パネルの形成した後工程に液晶パネル駆
動用ＩＣチップを形成するものである。In other words, the IC chip for driving the liquid crystal panel is formed in a process after forming the liquid crystal panel.
他方、ＣＯ８の作製方法も知られている。しかしこの作
製方法も液晶パネルを形成した後にこのパネルの周辺部
にＩＣを装着するものである。On the other hand, methods for producing CO8 are also known. However, this manufacturing method also involves forming a liquid crystal panel and then mounting ICs around the periphery of the panel.
「発明の解決しようとする問題」
しかし前者はＦＰＣ，ＰＣＢの費用がかさむ。加えて液
晶パネルとＦＰＣとの相互の連結が十分円滑にいかない
。特に６４０ Ｘ４００素子またはそれ以上のＡ４判等
の大画面を有するマトリックス構成をする液晶表示装置
においては、相互に連結する連結箇所は１０４０箇所も
あり、ここでの製造歩留まりの低さが最終価格の上昇を
誘発してしまった。``The problem that the invention aims to solve'' However, the former increases the cost of FPC and PCB. In addition, the mutual connection between the liquid crystal panel and the FPC is not smooth enough. In particular, in liquid crystal display devices that have a matrix configuration and have a large screen such as 640 x 400 elements or larger, such as A4 size, there are as many as 1040 interconnecting points, and the low manufacturing yield here is a major factor in the final price. It caused an increase.
また従来のＣＯ８の作製方法に関しては、もしＩＣチッ
プの装着箇所に不良があり十分でない場合、修理中の熱
処理により液晶パネルそれ自体を破壊しやすい。また最
終完成品の状態での部分的な電気的検査がしにくい等の
欠点を有する。このため、このＣＯ３方式に関しては１
５０℃以上の熱処理に耐えない液晶がすでに充填されて
いるため、きわめて高度な技術を必要とするという欠点
を有する。Furthermore, with regard to the conventional CO8 manufacturing method, if there is a defect in the mounting location of the IC chip and it is not sufficient, the liquid crystal panel itself is likely to be destroyed by heat treatment during repair. It also has the disadvantage that it is difficult to conduct partial electrical inspections of the final finished product. Therefore, regarding this CO3 method, 1
Since it is already filled with liquid crystal that cannot withstand heat treatment at 50° C. or higher, it has the disadvantage of requiring extremely advanced technology.
また前者のＦＰＣ，ＰＣＢ方式に関しては液晶パネルの
製造する工程とＦＰＣまたはＰＣＢを作る工程とが独立
であるため、それぞれの工程における在庫管理がしやす
いという長所を有しつつも、部品点数がきわめて多いた
め高価になってしまう。Regarding the former FPC/PCB method, the process of manufacturing the liquid crystal panel and the process of making the FPC or PCB are independent, so while it has the advantage of easy inventory control in each process, it also has the advantage of making it extremely easy to manage the number of parts. Because there are so many of them, they become expensive.
本発明はこれらの欠点を除去し、必要部品点数を少なく
する。それに伴う低価格化および高信頬性化、さらにＩ
Ｃチップの製造工程のミスに対する発見およびその後の
修理を何ら他部の信頼性低下を誘発することな〈実施し
、モジュールレベルの価格の低下を促さんとするもので
ある。The present invention eliminates these drawbacks and reduces the number of parts required. Along with this, lower prices and higher confidence levels, and I
The purpose is to detect errors in the manufacturing process of C chips and carry out subsequent repairs without causing any reduction in the reliability of other parts, thereby promoting a reduction in module-level prices.
「問題を解決するための手段」
本発明はこれらの問題を解決するため、第３図にその製
造工程が示されている如くに実施する液晶装置の作製方
法に関する。"Means for Solving the Problems" In order to solve these problems, the present invention relates to a method for manufacturing a liquid crystal device, the manufacturing process of which is carried out as shown in FIG.
第３図に示される如く、本発明は基板、例えばガラス基
板上に透光性の電極・リード（電極およびリード）の形
成、ＩＣチップを装着する周辺回路パターンの形成およ
びＩＣチップを周辺回路パターンに装着形成の工程を行
う。As shown in FIG. 3, the present invention involves the formation of translucent electrodes and leads (electrodes and leads) on a substrate, for example a glass substrate, the formation of a peripheral circuit pattern on which an IC chip is mounted, and the formation of a peripheral circuit pattern on which an IC chip is mounted. The process of mounting and forming is performed.
さらにこの後、これらに対しこのＩＣチップおよびその
装着具合、液晶パネル部の透光性の電極およびリードの
電気的検査を行う。そして不良箇所のある場合は、この
前工程の後ただちに修理を行う。そしていわゆる各基板
および基板上の透光性の電極およびリードさらにＩＣチ
ップおよびその装着具合の完成したいわゆる良品の基体
のみを後工程で用いる。そしてこの基体を一対となさし
め、その透光性の電極およびリード側を互いに対抗して
貼り合わせてパネル部にマトリックス状の電極群を形成
させる。この後、この電極間に液晶を充填することによ
り、液晶パネルの形成、即ち液晶モジュールの形成を行
う。かかる工程を経て、枠組、検査、マーキング、包装
、出荷を行わんとするものである。Furthermore, after this, the IC chips and their mounting conditions, as well as the translucent electrodes and leads of the liquid crystal panel section, are electrically inspected. If there is a defective part, it will be repaired immediately after this pre-process. Then, only the so-called good quality substrates, in which the so-called substrates, the translucent electrodes and leads on the substrates, the IC chips, and their mounting conditions are completed, are used in the subsequent process. Then, the base bodies are combined into a pair, and the translucent electrodes and lead sides thereof are bonded to each other so as to face each other to form a matrix-like electrode group on the panel portion. Thereafter, by filling liquid crystal between the electrodes, a liquid crystal panel, that is, a liquid crystal module is formed. After going through these steps, the product will be assembled, inspected, marked, packaged, and shipped.
即ち、本発明はＣＯ８構成を有せしめるとともに液晶の
充填の前にＩＣを透光性の電極およびリードを有する基
板の周辺部に装着せしめるものである。That is, the present invention has a CO8 structure and, before filling with liquid crystal, an IC is mounted on the periphery of a substrate having translucent electrodes and leads.
「作用」
かかる本発明の作製方法を実施することによりＩＣチッ
プの装着具合の検査およびそれに伴う修理が可能になる
。このＩＣチップの３００〜４００℃の高温度下での装
着および修理が可能となる。基板上にＩＣチップを装着
したため、モジュール全体を薄くまた軽くすることがで
きた。"Function" By carrying out the manufacturing method of the present invention, it becomes possible to inspect the mounting condition of the IC chip and perform repairs accordingly. This IC chip can be mounted and repaired at high temperatures of 300 to 400°C. By mounting the IC chip on the board, the entire module could be made thinner and lighter.
以下に実施例を基づき本発明を記す。The present invention will be described below based on Examples.
「実施例１」 本発明方法の実施例を第４図に従って記す。"Example 1" An example of the method of the present invention will be described according to FIG.
第４図は基板例えばガラス基板の洗浄を行う。In FIG. 4, a substrate such as a glass substrate is cleaned.
透光性の電極・リード及び周辺の回路パターン（配線リ
ードパターン）の形成を行う。さらにＩＣを周辺回路上
に装着して基体を作製する。この後電気検査を行う。以
上を前工程（Ａ−Ａ’）という。この後、後工程におい
て作業中にＩＣチップに機械的力が加わり装着不良が発
生することを防ぐため、エポキシポツティング剤により
ＩＣチップをカバーする。このポンティング剤は硬化後
も比較的柔らかく最終工程の後にＩＣチップに局部応力
が加わらないようにする作用も有する。これらの後、透
光性の電極およびリード上に有機極薄膜等を形成する。Form translucent electrodes/leads and surrounding circuit patterns (wiring lead patterns). Furthermore, the IC is mounted on the peripheral circuit to produce a base body. After this, conduct an electrical inspection. The above process is called a pre-process (AA'). Thereafter, the IC chip is covered with an epoxy potting agent in order to prevent mechanical force from being applied to the IC chip during work in subsequent steps and causing mounting defects. This ponting agent is relatively soft even after curing and has the effect of preventing local stress from being applied to the IC chip after the final process. After these steps, an ultra-thin organic film or the like is formed on the translucent electrodes and leads.
その一方または双方にラビング処理を施し、配向膜の形
成をする。さらに一対の基体を透光性の電極を互いに対
抗して周辺部に熱硬化性のエポキシ樹脂のスクリーン印
刷をして形成し、それぞれを互いに貼り合わせる。この
後、周辺部の封止材に熱プレスを行い、電極間隙を所定
の厚さ１〜１０μ例えば２μとする。さらにこの後に液
晶の注入を行うと、その後は修理ができなくなるためこ
れらの工程の後金一度電気検査を行う。次にこれら貼り
合わせられた一対の基体を真空中に保持し、基体間の大
気を除去した後、外部よりこの間に液晶を注入する。さ
らにこの結果パネルが膨れる傾向にあるため、再プレス
をこれら全体を加熱して行う。そして液晶を注入した注
入口を封止する。One or both of them is subjected to rubbing treatment to form an alignment film. Further, a pair of substrates is formed by screen printing a thermosetting epoxy resin on the peripheral portions of the substrates with transparent electrodes facing each other, and the substrates are bonded to each other. Thereafter, the sealing material in the peripheral portion is hot-pressed, and the electrode gap is set to a predetermined thickness of 1 to 10 μm, for example, 2 μm. Furthermore, if liquid crystal is injected after this, it will no longer be possible to repair the device, so an electrical inspection is performed once after these steps. Next, the pair of bonded substrates is held in a vacuum, and after removing the atmosphere between the substrates, liquid crystal is injected between them from the outside. Furthermore, as a result of this, the panels tend to swell, so re-pressing is performed by heating the entire panel. Then, the injection port into which the liquid crystal was injected is sealed.
この実施例では紫外光により硬化する有機樹脂により実
施する。In this example, an organic resin that is cured by ultraviolet light is used.
さらに液晶の封入状態をチェックし、このガラス基板表
面を洗浄した後、偏光板をその表面に貼りつけることに
より液晶パネル（周辺回路のないまた液晶表示パネルと
しては完成している）即ち液晶モジュール（ＩＣまで装
着されている）を構成せしめる。Furthermore, after checking the sealed state of the liquid crystal and cleaning the surface of the glass substrate, a polarizing plate is pasted on the surface of the glass substrate. (even the IC is installed).
この後外部からの機械的強圧を保護するため、エポシ樹
脂等によりＩＣチップ部を含む周辺部のモールディング
（樹脂封止）、さらにその外側を金属枠で囲む。After this, in order to protect against strong mechanical pressure from the outside, the peripheral part including the IC chip part is molded (resin-sealed) with epoxy resin or the like, and the outside thereof is further surrounded by a metal frame.
この後出荷検査を行い、良品に対しマーキング包装出荷
等を実施する。After this, a shipping inspection is performed, and non-defective products are marked, packaged, and shipped.
かかる工程を経て作られた液晶パネルの主要部の縦断面
図を第１図に示す。FIG. 1 shows a vertical cross-sectional view of the main parts of a liquid crystal panel manufactured through this process.
第１図の概要を示す。An overview of Figure 1 is shown.
第１図は一対のガラス基板（１）、（１’）、金属の周
辺回路（４）、（４’）、マトリックス構成の透光性の
電極およびリード（２）、（２“）が設けられている。Figure 1 shows a pair of glass substrates (1), (1'), metal peripheral circuits (4), (4'), and matrix-structured translucent electrodes and leads (2), (2''). It is being
そして一方の電極およびリード（２）は金属の周辺回路
（４）に連結されている。One electrode and lead (2) is connected to a metal peripheral circuit (4).
ＩＣチップ（５）はフェイスダウン（ボンドバットのあ
る側が下側を向いている）構成として、（６）。The IC chip (5) has a face-down configuration (the side with the bond butt faces downward) (6).
（６゛）にて銅バンブおよび導電性ペーストにより周辺
回路（４）、（４“）に連結している。このＩＣチップ
が配向膜形成、液晶の注入の工程により破損しないよう
ポツティングモールド（７）によりＩＣチップの保護が
されている。(6゛) is connected to the peripheral circuits (4) and (4'') using copper bumps and conductive paste.In order to prevent this IC chip from being damaged during the alignment film formation and liquid crystal injection processes, a potting mold ( 7) protects the IC chip.
液晶（３）が一対の透光性の電極間に充填され、周辺部
はエボシキ（１２）により封止されている。Liquid crystal (3) is filled between a pair of translucent electrodes, and the periphery is sealed with embossment (12).
さらに液晶パネルを形成した後、ＦＰＣ（１０）の電極
・リード（９）により外部電源回路、外部信号回路と周
辺回路（４゛）が連結されている。これらの周辺部に対
し有機樹脂例えばエポキシ樹脂（８）により全体をモー
ルディング（充填）し、金属枠（１１）により液晶パネ
ル、ＩＣチップを有する周辺回路のすべてを保護するよ
うにしている。Furthermore, after forming the liquid crystal panel, the external power supply circuit, external signal circuit, and peripheral circuit (4') are connected by electrodes/leads (9) of the FPC (10). These peripheral parts are entirely molded (filled) with an organic resin such as an epoxy resin (8), and a metal frame (11) protects all peripheral circuits including the liquid crystal panel and IC chips.
「実施例２」
実施例１に示した液晶装置における基板の洗浄工程より
電気検査過程に至る前工程（八−八′）の製造方法を第
５図（Ａ）に示す。``Example 2'' A manufacturing method for the pre-process (8-8') from the substrate cleaning process to the electrical inspection process in the liquid crystal device shown in Example 1 is shown in FIG. 5(A).
その他は実施例１と同様である。The rest is the same as in Example 1.
第５図（Ａ）に示されている如く、この方法においては
スクリーン印刷法により洗浄された基板上に周辺回路パ
ターンを形成させる。この後液晶が充填される領域に対
しスパッタ法により透光性専電膜例えば酸化インジュー
ム・スズを形成する。As shown in FIG. 5A, in this method, a peripheral circuit pattern is formed on a cleaned substrate by screen printing. Thereafter, a transparent dielectric film such as indium tin oxide is formed by sputtering on the region to be filled with liquid crystal.
この後この酸化インジュームに対し、本発明人の出願に
なる特許側５９−２１１７６９ （昭和５９年１０月８
日出願）「光加工法」および特許側６１−＋８６！（ｌ
こ（昭和６１年８月８日出願）「基板上の導電膜の加工
方法」に基づき基板のＸ方向またはＹ方向に６４０本ま
たは４００本の線状の透光性の電極およびリードを形成
する。この電極およびリードはフォトレジストを用いて
いないため、製造工程がきわめて簡略化できる。さらに
この後、ＩＣを周辺に装着する。この装着は銅バンプお
よび銀ペーストを用いた。即ち予め作られた印刷マスク
により導電膜ペーストをバット部のみに印刷する。その
後この印刷した部分にＩＣパッドを対抗して配設せしめ
、フェイスダウン構成をして加圧し、かつ１５０〜２０
０℃に加熱することによりパッド部での固着および周辺
回路との電気的接続をはかる。After this, regarding this oxidized indium, the present inventor filed a patent application No. 59-211769 (October 8, 1982).
Application filed in Japan) “Optical processing method” and patent side 61-+86! (l
Forming 640 or 400 linear translucent electrodes and leads in the X direction or Y direction of the substrate based on this (filed on August 8, 1986) "Method for processing a conductive film on a substrate" . Since these electrodes and leads do not use photoresist, the manufacturing process can be extremely simplified. Furthermore, after this, an IC is attached to the periphery. This attachment used copper bumps and silver paste. That is, the conductive film paste is printed only on the butt portion using a printing mask made in advance. After that, an IC pad is placed opposite to this printed part, and pressure is applied in a face-down configuration.
By heating to 0° C., fixation at the pad portion and electrical connection with peripheral circuits are achieved.
この後これら全体に対し電気的検査を行う。この電気的
検査に対しては外部よりの電源の供給、タイミング等の
信号の供給を行う以外はＩＣが装着された周辺回路およ
びそれに連結した透光性の電極およびリードの他端、即
ち基板におけるＩＣが装着されていない側の透光性の電
極およびリードにプローブをたてて検査を行う。After this, electrical inspection is performed on the entire structure. For this electrical inspection, except for supplying power and timing signals from the outside, the peripheral circuit on which the IC is mounted, the translucent electrode connected to it, and the other end of the lead, i.e., the substrate. Inspection is performed by placing a probe on the translucent electrode and lead on the side where the IC is not attached.
するとこの隣あった透光性の電極およびリード間の絶縁
抵抗、ＩＣチップそれ自体の機能テスト、ＤＣテストお
よびＩＣチップの装着箇所の接触抵抗のすべてを透光性
の電極およびリードそれ自体のシート抵抗または破壊具
合に加えて調べることが可能となる。Then, the insulation resistance between the adjacent translucent electrode and lead, the function test of the IC chip itself, the DC test, and the contact resistance of the IC chip attachment point are all measured by the sheet of the translucent electrode and lead itself. It becomes possible to investigate in addition to resistance or degree of destruction.
そしてもしＩＣチップそれ自体が不良の場合は再度ｉｃ
チップを取り外して他の良品を装着すればよい。また透
光性の電極およびり〜ドと隣の電極およびリードとの間
の絶縁抵抗が十分でない場合はその間をエツチング等に
より残存物の除去により修理が可能となる。If the IC chip itself is defective, try again
Just remove the chip and install another good one. Furthermore, if the insulation resistance between the light-transmitting electrode or lead and the adjacent electrode or lead is not sufficient, it can be repaired by removing the remaining material between them by etching or the like.
かくして従来まった（実施できなかった不良品の修理を
可とし、液晶モジュールレベルで９０％以上の製造歩留
まりを期待することができるようになった。In this way, it has become possible to repair defective products that could not be done in the past, and it has become possible to expect manufacturing yields of 90% or more at the liquid crystal module level.
「実施例３」
この実施例は第５図（Ｂ）に示す工程で作ったものであ
る。即ち基板洗浄の後、透明導電膜の形成を行う。また
、周辺回路の形成をスクリーン印刷で行う。その後実施
例で示したレーザバターニング方法により透光性の電極
およびリードの形成を行う。さらにＩＣの装着を行い、
その後電気検査さらに不良箇所の修理を行うものである
。"Example 3" This example was made by the process shown in FIG. 5(B). That is, after cleaning the substrate, a transparent conductive film is formed. Additionally, peripheral circuits are formed by screen printing. Thereafter, transparent electrodes and leads are formed by the laser patterning method shown in the example. Furthermore, the IC is installed,
After that, an electrical inspection will be conducted and any defective areas will be repaired.
この実施例の工程では、最初全体の基板のみの時に大面
積の透光性導電膜を形成する。このためこの導電膜それ
自体を良質の被膜、特に下地基板と良好な密着をさせる
ことができる。しかし周辺回路形成におけるスクリーン
印刷後の焼成（４００〜５５０℃）に透光性導電膜がさ
らされる欠点を有する。その他は実施例２と同様である
。In the process of this embodiment, a large-area light-transmitting conductive film is first formed on only the entire substrate. Therefore, this conductive film itself can be brought into good adhesion to a high-quality coating, especially to the underlying substrate. However, it has the disadvantage that the transparent conductive film is exposed to baking (400 to 550° C.) after screen printing in forming peripheral circuits. The rest is the same as in Example 2.
「実施例４」
この実施例は第５図（Ｃ）にその作製工程を示している
。"Example 4" The manufacturing process of this example is shown in FIG. 5(C).
この工程は周辺回路を形成し、ここにＩＣを装着した後
、透光性導電膜の形成およびそれをバターニングをして
透光性の電極およびリードを形成する工程である。ＩＣ
が十分に機能的また静電的に強い場合はこれで十分であ
る。しかしスパッタ法で透光性導電膜を作る際、プラズ
マ雰囲気にいれることができないため、生産性の低い真
空蒸着法で作る必要がある。This step is a step of forming a peripheral circuit and mounting an IC thereon, and then forming a transparent conductive film and patterning it to form transparent electrodes and leads. IC
This is sufficient if it is functionally and electrostatically strong enough. However, when making a transparent conductive film by sputtering, it cannot be placed in a plasma atmosphere, so it must be made by vacuum evaporation, which has low productivity.
その他は実施例２と同様である。The rest is the same as in Example 2.
「実施例５」 この実施例は第５図（Ｄ）に示しである。"Example 5" This embodiment is shown in FIG. 5(D).
この工程は透光性導電膜を形成し、周辺回路の形成を行
う。さらに半導体集積回路の装着を行った後、透光性の
電極およびリードの形成を行う。In this step, a transparent conductive film is formed and peripheral circuits are formed. Furthermore, after mounting the semiconductor integrated circuit, transparent electrodes and leads are formed.
この工程はＩＣにとって装着の際はすべてのパット間が
透光性の導電膜により互いに導通状態となっており、耐
静電破壊に対応したものである。しかじ透光性の電極お
よびリードのバターニングがほぼ１００χの歩留まりを
期待できないと全体の歩留まりを下げてしまう。In this process, when the IC is mounted, all the pads are electrically connected to each other by a light-transmitting conductive film, and the IC is resistant to electrostatic discharge damage. However, if the patterning of translucent electrodes and leads cannot be expected to achieve a yield of approximately 100.chi., the overall yield will be lowered.
以上実施例２〜５に工程のバリエーションを示した。し
かし周辺回路と透光性の電極・リードとをフォトエツチ
ング工程を用いて同時に形成する工程を用いてもよい。Variations of the process are shown in Examples 2 to 5 above. However, a process may be used in which the peripheral circuit and the transparent electrodes/leads are simultaneously formed using a photoetching process.
この場合は周辺の回路を構成する部分は透光性導電膜と
金属被膜との多層構成をすることによりそこでの回路抵
抗の低減化をする必要がある。その他、第５図に示され
ていない組み合わせを実施することも可能である。In this case, it is necessary to reduce the circuit resistance there by forming a multilayer structure of a transparent conductive film and a metal film in the parts constituting the peripheral circuit. Other combinations not shown in FIG. 5 may also be implemented.
また本発明方法において、基板上に透光性の電極および
リードの形成と、周辺回路の形成を行う。Further, in the method of the present invention, transparent electrodes and leads are formed on the substrate, and peripheral circuits are formed.
その後、一対をなす基板を互いに貼り合わせる。Thereafter, the pair of substrates are bonded together.
さらにこの後にそれぞれの基板にＩＣを装着する。Furthermore, after this, ICs are mounted on each board.
以上を前工程とし、その後電気検査、不良品の修理を行
う。その後に液晶を充填する方式をとってもよい。しか
しかかる方法ではもし透光性の電極およびリードに不良
があった場合に修理不可能である。またＩＣ自体および
その装着具合を透光性の電極およびリードの他端より検
査をすることができないという欠点を有する。The above is the pre-process, followed by electrical inspection and repair of defective products. A method may also be adopted in which the liquid crystal is then filled. However, with this method, if there is a defect in the translucent electrode or lead, it cannot be repaired. Another drawback is that the IC itself and its mounting condition cannot be inspected from the other ends of the translucent electrodes and leads.
「効果」
以上に示した如く、本発明は液晶を充填する以前に基板
上にｔＣチップを装着し、このＩＣチップそれ自体、ｒ
ｃチップの装着具合および透光性の電極およびリードの
すべての要素の電気的な検査を行い得る。そしてこれら
の各素子の不良箇所の完全な修理を行い得る。その後の
工程として、この基板を互いに貼り合わせ、その間に液
晶を充填することにより液晶装置を作るものである。"Effects" As shown above, the present invention mounts a tC chip on a substrate before filling with liquid crystal, and this IC chip itself
C-chip attachment and all elements of translucent electrodes and leads can be electrically inspected. Then, it is possible to completely repair the defective parts of each of these elements. As a subsequent process, a liquid crystal device is manufactured by bonding these substrates together and filling the space between them with liquid crystal.
その結果、従来公知の作製方法では一度液晶を充填する
とその後の修理はまったく不可能であった。さらに、こ
の液晶の充填をしなければ透光性の電極およびリードの
検査もできず、またたとえできても不良品の修理ができ
ないという欠点を除去することができた。As a result, once liquid crystal is filled with conventional manufacturing methods, subsequent repairs are completely impossible. Furthermore, it was possible to eliminate the drawback that the translucent electrodes and leads could not be inspected without being filled with liquid crystal, and even if possible, defective products could not be repaired.
結果として液晶装置としての高信顛性に加えて高製造歩
留まりを伴う低価格化を成就し得る。As a result, in addition to high reliability as a liquid crystal device, a low price accompanied by a high manufacturing yield can be achieved.
本発明においては液晶装置として特に液晶表示装置を示
した。しかしこれのみではなく、液晶を用いたシアツタ
、液晶を用いたメモリ装置に対しても実施することがで
きる。In the present invention, a liquid crystal display device is particularly shown as a liquid crystal device. However, the invention is not limited to this, and can also be applied to theaters using liquid crystals and memory devices using liquid crystals.
第１図は本発明で作られた液晶装置の縦断面図を示す。
第２図は従来の液晶装置の作製工程を示す。
第３図、第４図、第５図は本発明の液晶装置の作製工程
を示す。
１．１”・・・ガラス基板
２．２゛・・・透光性の電極およびリード３・・・・液
晶
４．４”・・・周辺回路
５・・・・半導体集積回路素子（ＩＣ）６・・・・バン
プ
７・・・・ボッティングモールド
８・・・・モールド
９・・・・ＦＰＣの電極およびリード
１０・・・・ＦＰＣ
１１・・・・金属枠
１２・・・・貼り合わせ封止剤FIG. 1 shows a longitudinal cross-sectional view of a liquid crystal device made according to the present invention. FIG. 2 shows the manufacturing process of a conventional liquid crystal device. FIG. 3, FIG. 4, and FIG. 5 show the manufacturing process of the liquid crystal device of the present invention. 1.1"...Glass substrate 2.2"...Transparent electrodes and leads 3...Liquid crystal 4.4"...Peripheral circuit 5...Semiconductor integrated circuit element (IC) 6... Bump 7... Botting mold 8... Mold 9... FPC electrode and lead 10... FPC 11... Metal frame 12... Bonding Sealant
Claims (1)
およびリードを形成するとともに、該リードに連結した
前記基板上の周辺回路に半導体集積回路素子を配設する
工程と、該工程の後、前記一対を構成する基板を前記電
極およびリードを互いに対抗して配設せしめた後に液晶
を充填せしめる工程とを有することを特徴とする液晶装
置の作製方法。 ２、特許請求の範囲第１項において、透光性の電極およ
びリードを形成した後、該リードに連結した半導体集積
回路素子を形成するための周辺回路を形成せしめること
を特徴とする液晶装置の作製方法。 ３、特許請求の範囲第１項において、半導体集積回路素
子を連結する周辺回路を形成した後に透光性電極および
リードを形成することを特徴とする液晶装置の作製方法
。 ４、特許請求の範囲第１項において、半導体集積回路素
子を連結する周辺回路と透光性の電極およびリードとを
同時に形成することを特徴とする液晶装置の作製方法。 ５、特許請求の範囲第１項において、基板はガラスが用
いられたことを特徴とする液晶装置の作製方法。[Claims] 1. Forming transparent electrodes and leads on each of the substrates constituting the pair, and arranging a semiconductor integrated circuit element in a peripheral circuit on the substrate connected to the leads. A method for manufacturing a liquid crystal device, comprising: a step of arranging the pair of substrates with the electrodes and leads facing each other after the step, and then filling the substrates with liquid crystal. 2. A liquid crystal device according to claim 1, characterized in that after forming transparent electrodes and leads, a peripheral circuit for forming a semiconductor integrated circuit element connected to the leads is formed. Fabrication method. 3. A method for manufacturing a liquid crystal device according to claim 1, characterized in that the light-transmitting electrodes and leads are formed after forming a peripheral circuit for connecting semiconductor integrated circuit elements. 4. A method for manufacturing a liquid crystal device according to claim 1, characterized in that a peripheral circuit for connecting semiconductor integrated circuit elements, a light-transmitting electrode, and a lead are formed at the same time. 5. The method for manufacturing a liquid crystal device according to claim 1, characterized in that the substrate is made of glass.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61243873A JPS6396627A (en) | 1986-10-13 | 1986-10-13 | Preparation of liquid crystal device |
| EP87309028A EP0267688A1 (en) | 1986-10-13 | 1987-10-13 | Improvements relating to liquid crystal devices |
| KR1019870011340A KR920000601B1 (en) | 1986-10-13 | 1987-10-13 | Method of making liquid crystal devices |
| CN198787107022A CN87107022A (en) | 1986-10-13 | 1987-10-13 | The manufacture method of liquid crystal device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61243873A JPS6396627A (en) | 1986-10-13 | 1986-10-13 | Preparation of liquid crystal device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6396627A true JPS6396627A (en) | 1988-04-27 |
Family
ID=17110248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61243873A Pending JPS6396627A (en) | 1986-10-13 | 1986-10-13 | Preparation of liquid crystal device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6396627A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6468725A (en) * | 1987-09-09 | 1989-03-14 | Seiko Epson Corp | Liquid crystal display device with built-in driver |
| WO1994022044A1 (en) * | 1993-03-15 | 1994-09-29 | Seiko Epson Corporation | Liquid crystal display, and electronic device on which the liquid crystal display is mounted |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56161586A (en) * | 1980-05-16 | 1981-12-11 | Fujitsu Ltd | Method of manufacturing planar display unit |
| JPS5895383A (en) * | 1981-11-30 | 1983-06-06 | 株式会社東芝 | Matrix type display |
-
1986
- 1986-10-13 JP JP61243873A patent/JPS6396627A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56161586A (en) * | 1980-05-16 | 1981-12-11 | Fujitsu Ltd | Method of manufacturing planar display unit |
| JPS5895383A (en) * | 1981-11-30 | 1983-06-06 | 株式会社東芝 | Matrix type display |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6468725A (en) * | 1987-09-09 | 1989-03-14 | Seiko Epson Corp | Liquid crystal display device with built-in driver |
| WO1994022044A1 (en) * | 1993-03-15 | 1994-09-29 | Seiko Epson Corporation | Liquid crystal display, and electronic device on which the liquid crystal display is mounted |
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