JPS6394618A - Crystal growth method of ii-v compound semiconductor - Google Patents
Crystal growth method of ii-v compound semiconductorInfo
- Publication number
- JPS6394618A JPS6394618A JP24061986A JP24061986A JPS6394618A JP S6394618 A JPS6394618 A JP S6394618A JP 24061986 A JP24061986 A JP 24061986A JP 24061986 A JP24061986 A JP 24061986A JP S6394618 A JPS6394618 A JP S6394618A
- Authority
- JP
- Japan
- Prior art keywords
- doped
- impurities
- compound semiconductor
- lattice
- atomic radii
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 13
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 238000002109 crystal growth method Methods 0.000 title claims description 6
- 239000012535 impurity Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 229910052718 tin Inorganic materials 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 3
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 abstract description 3
- 229910000077 silane Inorganic materials 0.000 abstract description 2
- VXKWYPOMXBVZSJ-UHFFFAOYSA-N tetramethyltin Chemical compound C[Sn](C)(C)C VXKWYPOMXBVZSJ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract 2
- 229910000070 arsenic hydride Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 10
- 239000010410 layer Substances 0.000 description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 7
- 230000007547 defect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 229910005540 GaP Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野〕
本発明は■−Ｖ族化合物半尋体の結晶成長方法に関し、
特に■−Ｖ族化合物半導体への高濃度ドーピング技術に
関する。[Detailed Description of the Invention] (Industrial Field of Application) The present invention relates to a method for growing crystals of a hemihybrid compound of the ■-V group,
In particular, it relates to high-concentration doping technology for ■-V group compound semiconductors.
１１１−Ｖ族化合物半導体を用いたＧａＡｓＭＥＳＦＥ
Ｔ、ＩＩＥＭＴ等の半導体デバイスにとってｎ型高濃度
層の形成は、プロセス応用上重要である。特にオーミッ
クコンタクＩ一層などに用いられるｎ＋層を形成する場
合には、所定位置に高精度かつ有効にドーピングする必
要があるなめ、容易に高い制御性が得られる結晶成長技
術をドーピングに用いることはきわめて有効である。し
かも結晶成長法によるドーピングは、イオン注入法や拡
散法と比較して、下地の結晶を痛めないことと界面での
不Ｋｌの拡散がないという利点がある。このＩ−Ｖ族化
合物半導体のｎ型ドーパントには、■族元素を置換して
ドナーとなるＳｉ、Ｇｅ、Ｓｎ、Ｖ族元素を置換し。て
ドナーとなるＳ 、 Ｓｅ 、 Ｔｅ等がある。GaAsMESFE using 111-V group compound semiconductor
For semiconductor devices such as T and IIEMT, formation of an n-type high concentration layer is important for process applications. In particular, when forming an n+ layer used in an ohmic contact I single layer, etc., it is necessary to dope the predetermined positions with high precision and effectively. Extremely effective. Moreover, doping by the crystal growth method has advantages over the ion implantation method and the diffusion method in that it does not damage the underlying crystal and there is no diffusion of non-Kl at the interface. In the n-type dopant of this IV group compound semiconductor, a group (I) element is substituted with Si, Ge, Sn, or a group V element to serve as a donor. There are S, Se, Te, etc., which serve as donors.
しかし、■族元素を置換してドナーとなるドーパ〉トで
も、Ｖ族元素を置換してドナーとなるドーパントでも高
濃度にドーピングする場合には、ドーパントはある濃度
まではドナーとして活性化するが、それ以上ドーピング
しても活性化しないという問題がある。例えば、ガリウ
ム砒素（ＧａＡｓ）中にＳｉをドーピングした場合、雑
誌「ジャーナル・オブ・クリスタルグロース（Ｊｏｕｒ
ｎａｌｏｆ’ Ｃｒｙｓｔａｌ Ｇｒｏｗｔｂ）」、１
９８２年発行、第５７巻、３１８ページにエム・ドラミ
ンスキー（Ｍ。However, when doping at a high concentration, whether it is a dopant that replaces a group I element and becomes a donor, or a dopant that replaces a group V element and becomes a donor, the dopant becomes activated as a donor up to a certain concentration. , there is a problem that it will not be activated even if it is doped further. For example, if Si is doped into gallium arsenide (GaAs), the magazine "Journal of Crystal Growth"
nalof'Crystal Growtb), 1
Published in 1982, Volume 57, Page 318 by M. Draminsky.
Ｄｒｕ＋ａｉｎｓｋｉ）らによって報告さているように
、キャリア濃度は６ Ｘ １０１８（ｃ＋ｓ−’）にし
か達しない。As reported by Dru+ainski et al., the carrier concentration reaches only 6×1018(c+s−′).
［、発明が解決しようとする問題点１
この■族元素を置換してドナーとなる不純物について活
性化しない原因のひとつには、結晶中に不純物が大量に
導入されると、不純物とホスＩ・元素の原子半径の違い
から母相の格子に歪を生じ、格子欠陥ができやすくなり
、ドナーとなる不純物と格子欠陥がベアを形成しキャリ
アを放出しないということがある。[Problem to be Solved by the Invention 1] One of the reasons why the impurity that replaces the group III element and becomes a donor is not activated is that when a large amount of impurity is introduced into the crystal, the impurity and phos I. Differences in the atomic radii of the elements cause strain in the lattice of the parent phase, making it easier for lattice defects to form, and impurities serving as donors and lattice defects may form a bare structure, preventing carriers from being emitted.
本発明の目的は、このような問題を解決し、高濃度にド
ーピングできる■−Ｖ族化合物半導体の結晶成長方法を
提供することにある。An object of the present invention is to solve such problems and provide a method for growing crystals of a -V group compound semiconductor that can be doped at a high concentration.
し問題点を解決するための手段〕
本発明の■−Ｖ族化合物半導体の結晶成長方法は、■族
元素を置換してドナーとなる不純物をドーピングする際
に、前記■族元素より大きな原子半径を持つ不純物と小
さな原子半径を持つ不純物とを同時にドーピングするこ
とにより、格子の歪を解消したことを特徴とする。[Means for Solving the Problems] The crystal growth method of the ■-V group compound semiconductor of the present invention is such that when doping with an impurity that replaces the group ■ element and becomes a donor, an atomic radius larger than that of the group ■ element is used. It is characterized by eliminating lattice distortion by simultaneously doping an impurity with an atomic radius and an impurity with a small atomic radius.
〔作用」
本発明の構成において、■族元素より原子半径の大きな
不純物と小さな不純物とを同時にドーピングすると格子
の緩和が起こり格子の歪を解消する。このため格子の歪
による欠陥の発生が抑制され、ドナーの補償の原因であ
る不純物と欠陥のペアが形成されないので、有効にドナ
ーは活性化されキャリア濃度を増加させることが出来る
。[Function] In the structure of the present invention, when an impurity with a larger atomic radius and an impurity with a smaller atomic radius than the Group Ⅰ element are simultaneously doped, lattice relaxation occurs and lattice distortion is eliminated. Therefore, the generation of defects due to lattice distortion is suppressed, and pairs of impurities and defects that cause donor compensation are not formed, so that donors can be effectively activated and the carrier concentration can be increased.
次に本発明を図面により詳細に説明する。 Next, the present invention will be explained in detail with reference to the drawings.
第１図は本発明の実施例の結晶成長方法を実施するため
の装置の概略図である。図において、原料ガスおよびド
ーピングガスは、ガス供給口１より反応管内２に導入さ
れ、高周波コイル５で加熱されたカーボン製ペデスタル
４上に設置された基板３上にて分解され、化合物半導体
を生成する。FIG. 1 is a schematic diagram of an apparatus for carrying out a crystal growth method according to an embodiment of the present invention. In the figure, raw material gas and doping gas are introduced into a reaction tube 2 through a gas supply port 1, and are decomposed on a substrate 3 placed on a carbon pedestal 4 heated by a high-frequency coil 5 to produce a compound semiconductor. do.
未反応あるいは反応後のガスは、ガス排出口６がら排出
される。Unreacted or reacted gas is discharged from the gas outlet 6.
この装置を用い、原料ガスとしてトリメチルガリウム（
ＴＭＧ）、アルシン（＾５ｌ１３）、ドーピングガスと
してＳｉを含むシラン（Ｓｉｌ１４） 、Ｓｎを含むテ
１−ラメチルスズ（ＴＭＳｎ）を用いてＧａＡｓ中にＳ
ｉ、Ｓｎをドーピングした。Ｓｉ、ＳｎはＧａｔ！−置
換してドナーとなる不純物であり、Ｓｉ、Ｇａ、Ｓｎの
原子半径はそれぞれ１．１７人、１．２６人、１．４０
人なので、Ｓｉの原子半径はＧａより小さく、Ｓｎの原
子半径は逆に大きい。Using this equipment, trimethyl gallium (
S in GaAs using TMG), arsine (^5l13), silane containing Si as a doping gas (Sil14), and tetramethyltin (TMSn) containing Sn.
i, Doped with Sn. Si, Sn is Gat! -It is an impurity that becomes a donor by substitution, and the atomic radius of Si, Ga, and Sn is 1.17, 1.26, and 1.40, respectively.
Since it is a human being, the atomic radius of Si is smaller than that of Ga, whereas the atomic radius of Sn is larger.
第２図（ａ）〜（ｃ）はＧａＡｓ基板上に不純物をドー
ピングしたＧａＡｓをエピタキシャル成長した場合の基
板のエピタキシャル成長層の格子定数の差をエックス線
二結晶法で評価した特性図である。FIGS. 2(a) to 2(c) are characteristic diagrams obtained by evaluating the difference in lattice constant of the epitaxially grown layer of a GaAs substrate by epitaxially growing GaAs doped with impurities using the X-ray double crystal method.
ＴＭＧに対するドーピング流量比は５ｉｌ１４．ＴＭＳ
ｎともに３Ｘ１０−２である。第２図（ａ＞は、５ｉｌ
１４を用いてＧａＡｓにＳｉのみをドーピングした場合
を示し、格子定数差比にして、Δａ／ ａ＝１．５ Ｘ
１０−４だけ成長層の方が基板より格子定数が短くな
る。第２図（ｂ）は、ＴＭＳｎを用いてＧａＡｓにＳｎ
のみをドーピングした場合を示し、Δａ／ ａ＝２−７
Ｘ １０−’だけ成長層の方が基板より格子定数が長
くなる。The doping flow rate ratio to TMG is 5il14. TMS
Both n are 3X10-2. Figure 2 (a> is 5il
14 is used to dope GaAs with only Si, and the lattice constant difference ratio is Δa/a=1.5X
The lattice constant of the grown layer is shorter than that of the substrate by 10-4. Figure 2(b) shows how Sn is applied to GaAs using TMSn.
Δa/a=2-7
The lattice constant of the grown layer is longer than that of the substrate by X 10-'.
しかし、第２図（ｃ）に示すようにＳｉ、Ｓｎを同量ド
ーピングした場合は、基板と成長層の格子定数差はなく
なり、格子歪が緩和されていることを示している。この
効果により、Ｓｉ、Ｓｎを単独にドーピングした時はキ
ャリア濃度の最高値が６〜８Ｘ １０１８（ｃｎ−’）
であるのに対し、同時ドーピングを行うとキャリア濃度
は１．５ Ｘ １０１９（ｃ＋ａ−’）に増加した。However, as shown in FIG. 2(c), when the same amounts of Si and Sn are doped, there is no difference in lattice constant between the substrate and the grown layer, indicating that the lattice strain is relaxed. Due to this effect, when Si and Sn are doped alone, the maximum value of the carrier concentration is 6 to 8X 1018 (cn-')
On the other hand, when simultaneous doping was performed, the carrier concentration increased to 1.5 x 1019 (c+a-').
以上の実施例では、結晶成長方法として有機金属気相成
長法を用いてｎ型ＧａＡｓ層を形成する場合を示したが
、他の■−ｖ族化合物、例えばアルミニウムヒソ（＾ｅ
Ａｓ）、インジウムヒソ（ＩｎＡｓ）、ガリウムリン（
ＧａＰ）あるいはこれらの混晶であっても、また他の不
純物を用いても、他の成長法で行っても、本発明の範囲
を逸脱しない条件で任意に変更できる。In the above embodiments, the case where the n-type GaAs layer was formed using organometallic vapor phase epitaxy as the crystal growth method was shown, but other ■-v group compounds, such as aluminum histo(^e
As), indium histo (InAs), gallium phosphide (
Any changes can be made without departing from the scope of the present invention, such as by using GaP) or a mixed crystal thereof, using other impurities, or using other growth methods.
以上説明したように、本発明によれば、ｌ１ｌ−Ｖ族化
合物半導体にドナー不純物をドーピングする際にホスト
元素より大きな原子半径を持つ不純物と小さな原子半径
を持つ不純物を同時にドーピングすることにより、格子
の歪を解消し、より高いキャリア濃度を得ることができ
る。As explained above, according to the present invention, when doping an l1l-V group compound semiconductor with a donor impurity, by simultaneously doping an impurity with a larger atomic radius and an impurity with a smaller atomic radius than the host element, the lattice distortion can be eliminated and higher carrier concentration can be obtained.
第１図は本発明の実施例で用いた結晶成長装置の概略図
、第２図（ａ）〜（ｃ）はエックス線二結晶法による基
板と成長層のずれを示す特性図である。
１・・・ガス供給口、２・・・反応管、３・・・基板、
４・・・ペデスタル、５・・・高周波コイル、６・・・
ガス排出口。
第１ ￥２ＩFIG. 1 is a schematic diagram of a crystal growth apparatus used in an example of the present invention, and FIGS. 2(a) to 2(c) are characteristic diagrams showing misalignment between a substrate and a grown layer by the X-ray double crystal method. 1... Gas supply port, 2... Reaction tube, 3... Substrate,
4...Pedestal, 5...High frequency coil, 6...
Gas outlet. 1st ¥2I
Claims (1)
する際に、前記III族元素より大きな原子半径を持つ不
純物と小さな原子半径を持つ不純物とを同時にドーピン
グすることを特徴とするIII−Ｖ族化合物半導体の結晶
成長方法。A III-V compound characterized in that when doping an impurity that replaces a Group III element and becomes a donor, an impurity having a larger atomic radius and an impurity having a smaller atomic radius than the Group III element are simultaneously doped. Semiconductor crystal growth method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24061986A JPS6394618A (en) | 1986-10-08 | 1986-10-08 | Crystal growth method of ii-v compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24061986A JPS6394618A (en) | 1986-10-08 | 1986-10-08 | Crystal growth method of ii-v compound semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6394618A true JPS6394618A (en) | 1988-04-25 |
Family
ID=17062189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24061986A Pending JPS6394618A (en) | 1986-10-08 | 1986-10-08 | Crystal growth method of ii-v compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6394618A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5186784A (en) * | 1989-06-20 | 1993-02-16 | Texas Instruments Incorporated | Process for improved doping of semiconductor crystals |
-
1986
- 1986-10-08 JP JP24061986A patent/JPS6394618A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5186784A (en) * | 1989-06-20 | 1993-02-16 | Texas Instruments Incorporated | Process for improved doping of semiconductor crystals |
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