JPS6393161A - Semiconductor switching element - Google Patents

Semiconductor switching element

Info

Publication number
JPS6393161A
JPS6393161A JP23885086A JP23885086A JPS6393161A JP S6393161 A JPS6393161 A JP S6393161A JP 23885086 A JP23885086 A JP 23885086A JP 23885086 A JP23885086 A JP 23885086A JP S6393161 A JPS6393161 A JP S6393161A
Authority
JP
Japan
Prior art keywords
layers
gate voltage
semiconductor switching
switching element
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23885086A
Other languages
Japanese (ja)
Inventor
Noriaki Tsukada
塚田　紀昭
Kenzo Fujiwara
藤原　賢三
Yasuki Tokuda
徳田　安紀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP23885086A priority Critical patent/JPS6393161A/en
Publication of JPS6393161A publication Critical patent/JPS6393161A/en
Pending legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66977—Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects, i.e. Bragg- or Aharonov-Bohm effects

Abstract

PURPOSE:To enable switching at high speed at low gate voltage by changing electronic distribution in a conductive channel by gate voltage in a semiconductor switching element using a quantum interference effect. CONSTITUTION:GaAs quantum well layers 21, 22 held by AlGaAs layers 2, 4, 6 are formed onto a semi-insulating GaAs substrate 1. Currents flowing between electrodes 8a, 8b pass through the GaAs layers 21, 22. Switching operation is conducted by the alteration of the phase difference of electron waves flowing through the layers 21, 22 in response to a magnetic field or an electric field. When the thickness of the layers 21, 22 is made to differ previously, voltage is applied to a gate 23 and electronic distribution in the layers 12, 22 is varied, a distance between the conductive channel of the layer 21 and the conductive channel of the layer 22 changes, thus altering the phase difference of the electron waves of both layers 21, 22. A semiconductor switching element is operated at gate voltage lower than switching only by an electric field.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は電子の量子干渉効果を用いた超高速スイッチ
ング機能を有する半導体スイッチング素子に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor switching element having an ultra-high-speed switching function using the quantum interference effect of electrons.

〔従来の技術〕[Conventional technology]

第４図は例えばフィジカル　レビュー　レターズ、５５
巻、　２３４４頁、　（１９８５年）（Ｐｈｙｓｉｃａ
ｌ　Ｒｅｖｉｅｗ　Ｌｅｔｔｅｒｓ　Ｖｏｌ、５５　Ｐ
、２３４４（１９８５））に示された電子の量子干渉効
果（アハラノフ・ボーム効果）を用いたスイッチング素
子を示す構成図であり、図において、１は半絶縁性Ｇａ
Ａｓ基板、２．６はＡｊ２ＧａＡｓｊｌｉ、３，５はＧ
ａＡｓ量子井戸層、４はＡｌＧａＡｓバリア層、７ａ、
７ｂ・はアロイ化されたコンタクト領域、１３ａ、８ｂ
は電極である。Figure 4 is an example of Physical Review Letters, 55.
Volume, 2344 pages, (1985) (Physica
l Review Letters Vol, 55 P
, 2344 (1985)) is a configuration diagram showing a switching element using the electron quantum interference effect (Aharanov-Bohm effect), in which 1 is a semi-insulating Ga
As substrate, 2.6 is Aj2GaAsjli, 3,5 is G
aAs quantum well layer, 4 is an AlGaAs barrier layer, 7a,
7b is an alloyed contact region, 13a, 8b
is an electrode.

次に動作について説明する。第４図に示した素子構造に
おいて、ＡＪＧａＡｓ層２，４．６に挟まれた２本のＧ
ａＡｓ層３，５が電子の通路となる。従って第４図を模
式的に示すと第５図（ａ）のようになる。ここで導電チ
ャネル（すなわちＣ，ａＡＳ層）の厚さＷは十分薄く電
子波の基本横モードのみを伝搬するものと考える。キャ
リア密度を１０′。ｃＩｉとすればＷ〜０．１μｍとな
る。第５図（ａ）に示す様な２本の導電チャネルの導電
率σ−ＩＴＩ”は、各々の導電チャネルの透過係数によ
って下記の様に与えられる。Next, the operation will be explained. In the device structure shown in FIG. 4, two G
The aAs layers 3 and 5 serve as paths for electrons. Therefore, when FIG. 4 is schematically shown, it becomes as shown in FIG. 5(a). Here, it is assumed that the thickness W of the conductive channel (ie, C, aAS layer) is sufficiently thin to propagate only the fundamental transverse mode of the electron wave. Carrier density is 10'. If cIi, then W~0.1 μm. The conductivity σ-ITI'' of two conductive channels as shown in FIG. 5(a) is given by the transmission coefficient of each conductive channel as follows.

σ＝ｌＴｌｔ＝ｌ　ｔ、＋ｔ、ｌ” −ｔ、”　＋ｔ、”　＋２ｔ、ｔＩＣＯ３φ　・（１）
ここでＴは両電極間の透過係数、１．はチャネル１の透
過係数、ｔ２はチャネル２の透過係数で、φは位相差（
チャネルｌと２との電子波間の位相差）である。式（１
）より電極間の導電率σはチャネル間の位相差φによっ
て変化し得ることがわかる。σ=lTlt=l t, +t, l” −t, “+t,” +2t, tICO3φ ・(1)
Here, T is the transmission coefficient between both electrodes, 1. is the transmission coefficient of channel 1, t2 is the transmission coefficient of channel 2, and φ is the phase difference (
phase difference between the electron waves of channels 1 and 2). Formula (1
), it can be seen that the conductivity σ between the electrodes can be changed depending on the phase difference φ between the channels.

位相差φは下記（２）式から磁界Ｂ、（アハラノフ・ボ
ーム効果）によって φ−ｅ　Ｂ　ｙ　Ｌ　ｄ　／’Ｎ　　　　　　　　　　
・・・（２）または下記（３）式から電界εＷ（静電界
アハラノフ・ボーム効果） φ＝ｅ　ａｍ　ｌ、ｄ／′ｆｒｖｘ　　　　　　　　−
（３）によって変化させ得る。Ｌはチャネルの長さ、ｄ
はチャネル間の距離、ｖＸはＸ方向（チャネル方向）の
電子の速度、ｅは電子の電荷、市はブランク定数りの１
／２ｉ　（ｎ−１ｔ／２π）Ｔ：ある。The phase difference φ is determined by the magnetic field B and (Aharanov-Bohm effect) from the following equation (2) as φ−e B y L d /'N
...(2) or the following equation (3), electric field εW (electrostatic field Ahranov-Bohm effect) φ=e am l, d/'frvx −
(3) can be changed. L is the length of the channel, d
is the distance between channels, vX is the velocity of the electron in the X direction (channel direction), e is the charge of the electron, and 1 is the blank constant
/2i (n-1t/2π)T: Yes.

従って（１）〜（３）式により磁界Ｂ、または電界ε１
をＯＮ、ＯＦＦすることによりスイッチングが可能なこ
とは容易に理解できる。Therefore, according to equations (1) to (3), the magnetic field B or the electric field ε1
It is easy to understand that switching is possible by turning on and off.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

従来の磁場効果による位相変化を用いる素子では高速ス
イッチング動作は不可能である。また静電界効果による
位相変化を用いる場合も比較的高いゲート電圧が必要で
あるなどの問題点があった。High-speed switching operations are not possible with conventional elements that use phase changes due to magnetic field effects. Further, when using phase change due to an electrostatic field effect, there are also problems such as the need for a relatively high gate voltage.

この発明は上記のような問題点を解消するためになされ
たもので、磁場効果を用いる場合にも高速スイッチング
が可能で、静電界効果を用いる場合にはさらに低ゲート
電圧でＯＮ、ＯＦＦ動作が可能な半導体スイッチング素
子を得ることを目的とする。This invention was made to solve the above-mentioned problems, and high-speed switching is possible even when using a magnetic field effect, and ON/OFF operation can be performed with an even lower gate voltage when using an electrostatic field effect. The purpose is to obtain a semiconductor switching element that is possible.

〔問題点を解決するための手段〕[Means for solving problems]

この発明に係る半導体スイッチング素子は、導電チャネ
ルの上方、にゲート電極を設け、アハラノフ・ボーム効
果又は静電界アハラノフ・ボーム効果と上記ゲート電極
に印加する電界を変化させることとにより電流のスイッ
チングを行なうようにしたものである。The semiconductor switching element according to the present invention provides a gate electrode above the conductive channel, and performs current switching by using the Ahranoff-Bohm effect or the electrostatic field Ahlanoff-Bohm effect and changing the electric field applied to the gate electrode. This is how it was done.

〔作用〕[Effect]

この発明においては、各導電チャネル内の電子分布をゲ
ート電圧の印加により変化させることにより２本の導電
チャネルで囲まれる面積が変化し、これとアハラノフ・
ボーム効果又は静電界アハラノフ・ボーム効果とにより
電流のスイッチングを行うことができる。In this invention, by changing the electron distribution within each conductive channel by applying a gate voltage, the area surrounded by the two conductive channels changes, and the area surrounded by the two conductive channels changes.
Switching of the current can be performed by the Bohm effect or the electrostatic Ahranov-Bohm effect.

〔実施例〕〔Example〕

以下、この発明の一実施例を図について説明する。第１
図は本発明の一実施例に°よる半導体スイッチング素子
を示す構造図であり、図において、２１．２２は厚さの
異なるＧａＡｓ導電チャネルで、２３はゲート電極であ
る。また第４図と同一符号は同一部分を示す。An embodiment of the present invention will be described below with reference to the drawings. 1st
The figure is a structural diagram showing a semiconductor switching device according to an embodiment of the present invention. In the figure, 21 and 22 are GaAs conductive channels with different thicknesses, and 23 is a gate electrode. Also, the same reference numerals as in FIG. 4 indicate the same parts.

次に本発明に係る半導体スイッチング素子の構造と動作
について述べる。第１図の導電チャネル２１の厚さＷｌ
は、もう一方の導電チャネル２２の厚さＷ２に比べて薄
クシている。第２図（ａｌ、　（ｂ）にゲート電圧を印
加しない場合と、印加した場合のゲート下の導電チャネ
ルの伝導帯のエネルギーポテンシャルを示す。ゲート電
圧を印加しない場合は（ａ）に示す様に導電チャネルの
ポテンシャルの底はチャネルの中心に対して対称となり
、電子分布も中心対称となっている。従って、導電チャ
ネル２１．２２によって囲まれる面積は両チャネル間の
距離ｄ０と、その長さしの積（Ｓ、＝ｄｏＬ）で与えら
れる。ゲート電圧を印加した場合にはポテンシャルは（
ｂ）に示す様に勾配をもち、導電チャネル２１．２２の
ポテンシャルの底はもはや中心対称ではなくなり、電子
分布もチャネルの片側に片寄った状態となる。しかし導
電チャネル２１は導電チャネル２２に比べ薄いので電子
分布の変化は小さい、従って、ゲート電圧を印加した場
合の両チャネル間の距離はｄ、となり、印加しない場合
の値ｄ０より小さくなり、両チャネルで囲まれる面積は
５ｔ−ｄｉＬとなる。Next, the structure and operation of the semiconductor switching element according to the present invention will be described. Thickness Wl of conductive channel 21 in FIG.
is thinner than the thickness W2 of the other conductive channel 22. Figure 2 (al, (b) shows the energy potential of the conduction band of the conductive channel under the gate when no gate voltage is applied and when it is applied. When no gate voltage is applied, as shown in (a) The bottom of the potential of the conductive channel is symmetrical with respect to the center of the channel, and the electron distribution is also centrally symmetrical.Therefore, the area surrounded by the conductive channels 21 and 22 is determined by the distance d0 between both channels and their length. The potential is given by the product (S, = doL). When a gate voltage is applied, the potential is (
As shown in b), the bottom of the potential in the conductive channels 21 and 22 is no longer centrally symmetrical, and the electron distribution is also biased to one side of the channel. However, since the conductive channel 21 is thinner than the conductive channel 22, the change in electron distribution is small. Therefore, when a gate voltage is applied, the distance between both channels is d, which is smaller than the value d0 when no gate voltage is applied, and both channels The area surrounded by is 5t-diL.

先ず、磁界Ｂアによるアハラノフ・ボーム効果と上記の
ゲート電圧の変化による電子分布の変化を用いたスイッ
チング動作について説明する。First, a switching operation using the Ahranoff-Bohm effect caused by the magnetic field B and the change in electron distribution caused by the change in the gate voltage described above will be explained.

一定の磁界Ｂｙをスイッチング動作に関係なく与えてお
き、ゲート電圧ｖｃ、を印加することにより（２）式中
のｄの値を変化させようとするのがこの場合の動作原理
の基本である。ゲート電圧ゼロの場合にφ。ｗｅＢ、Ｌ
ｄｏ　／ｆｒ＝２ｎπ（ｎ＝ｏ。The basic operating principle in this case is to apply a constant magnetic field By regardless of the switching operation and to change the value of d in equation (2) by applying a gate voltage vc. φ when the gate voltage is zero. weB,L
do /fr=2nπ(n=o.

１．２．・・・・・・）となる様にＢｙｄｏの値を設定
し、ゲート電圧印加時にφ＋　＝ｅＢ、Ｌｄ＋　／′ｙ
Ｌ＝　（２＋１）π（ｎ＝０．１，２．　・・・・・・
）となる様にＢ、ｄ、の値を設定すれば、ゲート電圧の
ＯＮ。1.2. ), and when applying the gate voltage, φ+ = eB, Ld+ /'y
L= (2+1)π(n=0.1,2.
), if you set the values of B and d, the gate voltage will turn ON.

ＯＦＦにより電流のＯＮ、ＯＦＦが可能となる。OFF enables current to be turned ON and OFF.

そしてこの場合は磁界は一定磁界Ｂｙをかけたままでゲ
ート電圧をＯＮ、ＯＦＦするようにしているので、高速
のスイッチング動作が可能となる。In this case, the gate voltage is turned on and off while a constant magnetic field By is applied, so that high-speed switching operation is possible.

一方、静電界アハラノフ・ボーム効果とゲート電圧の変
化による電子分布の変化を用いる場合には、（３）式中
のゲート電圧のＯＮ、ＯＦＦによりε２の値が変化する
のと同時に該ゲート電圧の変化により上述のｄの変化（
ａｏ−ｄｔ）も発生することになる。ゲート電圧がゼロ
の場合ε８＝Ｏであるからφ。＝Ｏとなるので（１）式
より電流は最大（すなわちＯＮ状態）となる。ゲート電
圧印加時にφ１　＝ｅ　ｔ＊　ｌｄＩ／Ｓｖ、＝　（２
Ｈ＋ｌ）　πとなる様にすれば、ＯＦＦ状態が得られる
。On the other hand, when using the electrostatic field Ahranov-Bohm effect and changes in electron distribution due to changes in gate voltage, the value of ε2 changes depending on ON and OFF of the gate voltage in equation (3), and at the same time the gate voltage changes. Due to the change, the change in d mentioned above (
ao-dt) will also occur. When the gate voltage is zero, ε8=O, so φ. =O, so according to equation (1), the current becomes maximum (that is, ON state). When gate voltage is applied, φ1 = e t* ldI/Sv, = (2
H+l) π, an OFF state can be obtained.

従ってこの場合ゲート電圧の印加により静電界アハラノ
フ・ボーム効果を生じさせ、かつ両チャネルで囲まれる
面積ｄＬの変化を生じさせるようにしたの・で、比較的
低い電圧で電流のＯＮ、ＯＦＦが可能となる。Therefore, in this case, the application of the gate voltage causes the electrostatic field Ahranov-Bohm effect and causes a change in the area dL surrounded by both channels. Therefore, it is possible to turn the current on and off with a relatively low voltage. becomes.

なお、上記実施例では２本の厚さの異なるＧａＡｓ１電
チヤネルを用いる場合を示したが、一つの比較的厚いＧ
ａＡｓ層を用いても同様の効果が期待出来る。第３図は
このようにした本発明の他の実施例のポテンシャルと電
子分布の様子を示す。In the above embodiment, two GaAs1 electrical channels with different thicknesses were used, but one relatively thick G
A similar effect can be expected by using an aAs layer. FIG. 3 shows the potential and electron distribution of another embodiment of the present invention.

図において、３０は本実施例のＧａＡｓ量子井戸層から
なる導電チャネルである＊　ＣｙａＡｓ量子井戸層３０
とこれを両側からはさんでいるＡｌＧａＡｓ層との界面
ポテンシャルは電子親和力のため三角ポテンシャルに近
いポテンシャル構造となり、ゼロバイアスでは（ａ）に
示すように電子はこの界面近傍に２箇所にわかれて分布
する。ゼロバイアスではこの２つのチャネルが上記の２
つのＧａＡｓ導電チャネルと同様の作用をする。一方、
これにゲート電圧を印加すると（ｂｌに示す様に井戸の
底のポテンシャルが傾き、電子は一方の界面に分布する
様になる。従って、２つの導電チャネルに囲まれる面積
は、このときゼロ（位相差φ１もゼロ）で電流はＯＮ状
態となる。従ってゼロバイアスでφ。＝　＜２ｎ＋１）
　πとなる様にＢ、ｄ、の値を設定しておけば、バイア
ス印加のＯＮ、ＯＦＦが電流のＯＮ、ＯＦＦに対応する
ことになる。In the figure, 30 is a conductive channel made of the GaAs quantum well layer of this embodiment. *CyaAs quantum well layer 30
The interfacial potential between this and the AlGaAs layer sandwiching it from both sides has a potential structure close to a triangular potential due to electron affinity, and at zero bias, electrons are distributed in two locations near this interface, as shown in (a). do. At zero bias, these two channels are
It acts similarly to two GaAs conductive channels. on the other hand,
When a gate voltage is applied to this (as shown in bl), the potential at the bottom of the well is tilted and electrons are distributed at one interface. Therefore, the area surrounded by the two conductive channels is zero (potential). When the phase difference φ1 is also zero), the current is in the ON state.Therefore, with zero bias, φ.=<2n+1)
If the values of B and d are set so as to be π, turning on and off the bias application corresponds to turning on and off the current.

さらに第３図の構造においてＧａＡｓ井戸層とＡｇＧａ
Ａｓ１Ｗの２つの界面のどちらか一方にドーピングを行
い、（３）式のｖ８を変化させるように構成することも
可能である。Furthermore, in the structure shown in FIG.
It is also possible to do a configuration in which one of the two interfaces of As1W is doped to change v8 in equation (3).

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明に係る半導体スイッチング素子
によれば電子波の干渉を用いる半導体スイッチング素子
において、従来、磁場または電界の強さを変化させてＯ
Ｎ、ＯＦＦ動作を行っていたものを、ゲート電界により
電子波の伝搬チャネルを空間的に変化させ、２本の導電
チャネルにより囲まれる面積を変えるようにし、これと
アハラノフ・ボーム効果又は静電界アハラノフ・ボーム
効果とを利用して電流のスイッチングを行うようにした
ので、高速スイッチング動作が可能であるとともに、低
いゲート電圧で動作可能なものが得られる効果がある。As described above, according to the semiconductor switching device according to the present invention, in a semiconductor switching device that uses interference of electron waves, conventionally, O
The N, OFF operation was changed by spatially changing the electron wave propagation channel using a gate electric field, changing the area surrounded by the two conductive channels, and combining this with the Ahranov-Bohm effect or electrostatic field Ahranoff.・Since current switching is performed using the Bohm effect, high-speed switching operation is possible, and the device can operate with a low gate voltage.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図はこの発明の一実施例による半導体スイッチング
素子の構成図、第２図は第１図の動作を説明するための
図、第３図はこの発明の他の実施例の動作を説明するた
めの図、第４図は従来の半導体スイッチング素子の構造
を示す図、第５図は第４図の従来の素子の動作を説明す
るための図である。 ２．４．６はＡ６ＧａＡｓ層、２１．　２２．　３０は
ＧａＡｓ量子井戸層、２３はゲート電極である。 なお図中同一符号は同−又は相当部分を示す。FIG. 1 is a block diagram of a semiconductor switching element according to an embodiment of the present invention, FIG. 2 is a diagram for explaining the operation of FIG. 1, and FIG. 3 is a diagram for explaining the operation of another embodiment of the invention. FIG. 4 is a diagram showing the structure of a conventional semiconductor switching element, and FIG. 5 is a diagram for explaining the operation of the conventional element shown in FIG. 2.4.6 is an A6GaAs layer, 21. 22. 30 is a GaAs quantum well layer, and 23 is a gate electrode. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (3)

【特許請求の範囲】[Claims] （１）２本の導電チャネルを伝搬する電子波の干渉効果
を用いる半導体電流スイッチング素子において、 上記２本の導電チャネル上にその印加電圧によって上記
導電チャネルのエネルギーポテンシャルを変化させるゲ
ート電極を備え、上記ゲート電極への印加電圧を変化さ
せることとアハラノフ・ボーム効果又は静電界アハラノ
フ・ボーム効果とを用いて電流のスイッチングを行うよ
うにしたことを特徴とする半導体スイッチング素子。(1) A semiconductor current switching element that uses the interference effect of electron waves propagating through two conductive channels, comprising a gate electrode on the two conductive channels that changes the energy potential of the conductive channel depending on the applied voltage; A semiconductor switching element characterized in that current switching is performed by changing the voltage applied to the gate electrode and using the Ahlanoff-Bohm effect or the electrostatic field Ahlanoff-Bohm effect. （２）上記２本の導電チャネルとして厚さの異なる２つ
のＧａＡｓ量子井戸層を用いたことを特徴とする特許請
求の範囲第１項記載の半導体スイッチング素子。(2) The semiconductor switching device according to claim 1, wherein two GaAs quantum well layers having different thicknesses are used as the two conductive channels. （３）上記２本の導電チャネルとして、一つのＧａＡｓ
量子井戸層とこれを挟む２つのＡｌＧａＡｓ層との界面
近傍に分布する２個所の電子導電領域を用いたことを特
徴とする特許請求の範囲第１項記載の半導体スイッチン
グ素子。(3) As the two conductive channels, one GaAs
2. A semiconductor switching device according to claim 1, characterized in that two electronically conductive regions are used that are distributed near an interface between a quantum well layer and two AlGaAs layers sandwiching the quantum well layer.
JP23885086A 1986-10-07 1986-10-07 Semiconductor switching element Pending JPS6393161A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23885086A JPS6393161A (en) 1986-10-07 1986-10-07 Semiconductor switching element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23885086A JPS6393161A (en) 1986-10-07 1986-10-07 Semiconductor switching element

Publications (1)

Publication Number Publication Date
JPS6393161A true JPS6393161A (en) 1988-04-23

Family

ID=17036190

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23885086A Pending JPS6393161A (en) 1986-10-07 1986-10-07 Semiconductor switching element

Country Status (1)

Country Link
JP (1) JPS6393161A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5003360A (en) * 1988-07-15 1991-03-26 Fujitsu Limited Semiconductor functional element
US5084743A (en) * 1990-03-15 1992-01-28 North Carolina State University At Raleigh High current, high voltage breakdown field effect transistor
EP0471288A2 (en) * 1990-08-09 1992-02-19 Canon Kabushiki Kaisha Electron wave coupling or decoupling devices and quantum interference devices
EP0475396A2 (en) * 1990-09-12 1992-03-18 Canon Kabushiki Kaisha Quantum interference device and corresponding method for processing electron waves
EP0475403A2 (en) * 1990-09-13 1992-03-18 Canon Kabushiki Kaisha Quantum interference devices and methods for processing interference current
US5130766A (en) * 1988-08-04 1992-07-14 Fujitsu Limited Quantum interference type semiconductor device
US5367274A (en) * 1991-06-28 1994-11-22 Telefonaktiebolaget L M Ericsson Quantum wave guiding electronic switch
US5406094A (en) * 1991-10-14 1995-04-11 Fujitsu Limited Quantum interference effect semiconductor device and method of producing the same

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5003360A (en) * 1988-07-15 1991-03-26 Fujitsu Limited Semiconductor functional element
US5130766A (en) * 1988-08-04 1992-07-14 Fujitsu Limited Quantum interference type semiconductor device
US5084743A (en) * 1990-03-15 1992-01-28 North Carolina State University At Raleigh High current, high voltage breakdown field effect transistor
EP0471288A2 (en) * 1990-08-09 1992-02-19 Canon Kabushiki Kaisha Electron wave coupling or decoupling devices and quantum interference devices
EP0471288A3 (en) * 1990-08-09 1994-05-18 Canon Kk Electron wave coupling or decoupling devices and quantum interference devices
US5521735A (en) * 1990-08-09 1996-05-28 Canon Kabushiki Kaisha Electron wave combining/branching devices and quantum interference devices
EP0475396A2 (en) * 1990-09-12 1992-03-18 Canon Kabushiki Kaisha Quantum interference device and corresponding method for processing electron waves
EP0475396A3 (en) * 1990-09-12 1994-04-20 Canon Kk
EP0475403A2 (en) * 1990-09-13 1992-03-18 Canon Kabushiki Kaisha Quantum interference devices and methods for processing interference current
EP0475403A3 (en) * 1990-09-13 1994-04-20 Canon Kk
US5367274A (en) * 1991-06-28 1994-11-22 Telefonaktiebolaget L M Ericsson Quantum wave guiding electronic switch
US5406094A (en) * 1991-10-14 1995-04-11 Fujitsu Limited Quantum interference effect semiconductor device and method of producing the same

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