JPS638296A - Formation of 3c-sic crystal - Google Patents
Formation of 3c-sic crystalInfo
- Publication number
- JPS638296A JPS638296A JP15239286A JP15239286A JPS638296A JP S638296 A JPS638296 A JP S638296A JP 15239286 A JP15239286 A JP 15239286A JP 15239286 A JP15239286 A JP 15239286A JP S638296 A JPS638296 A JP S638296A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- sic
- layer
- silicon
- molecular beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 17
- 230000015572 biosynthetic process Effects 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- HSFWRNGVRCDJHI-UHFFFAOYSA-N Acetylene Chemical compound C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 6
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 6
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 14
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 15
- 239000007789 gas Substances 0.000 description 9
- 238000003763 carbonization Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229930091051 Arenine Natural products 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（イ） 産業上の利用分野
本発明は３Ｃ（Ｃｕｂ ｉｃ ）−８ｉＣ（シリコンカ
ーバイド）結晶の形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a method for forming a 3C (Cubic)-8iC (silicon carbide) crystal.
（ロ）従来の技術
現在、３Ｃ−ＳｉＣ単結晶を成長する方決としては、シ
リコン（Ｓｌ）基板表面と炭化（ｃａｒｂｏｎｉｚａｔ
ｉｏｒ＋）することにより３Ｃ−ＳｉＣ層（以下炭化層
と称す）を形成し、その後祈るＳｉＣ層上に化学的気相
成長法、 。(b) Conventional technology At present, the method for growing 3C-SiC single crystals is to grow a silicon (Sl) substrate surface and carbonize the silicon (Sl) substrate surface.
Form a 3C-SiC layer (hereinafter referred to as a carbonized layer) by depositing 3C-SiC layer (hereinafter referred to as a carbonized layer), and then chemical vapor deposition on the SiC layer.
° ７ ？用いて３Ｃ−Ｓ
ｉＣ工ピタキシヤル層（以下成長層と称す）を形成する
方法が一投に採用されている。° 7? Using 3C-S
A method of forming an iC pitaxial layer (hereinafter referred to as a growth layer) has been adopted.
上記シリコン基板、ｆ［の炭化方法としてはＬａｔｅ
Ｎｅｗｓ Ａｂｓｔｒａｃｔｓ、１ｂｔｈ Ｃｏｎ
ｆｅｒｅｎｃｅｏｎｓｓＤＭ（ＳＯＬＩＤ ５ＴＡＴ
Ｅ ＤＥＶＩＣＥＳ Ａ’Ｎ’ｌ］ＩＡＴＥＲｆＡ
Ｌｓ ）、ＬＤ−１−４（１９８４）に開示されている
ように常圧でシリコン基板’ｚ１３６０°ＣＫ保持する
と共に祈る基板上ＶＣ０，０４９６Ｃ８Ｈ８を含んだＨ
２ガスを送り込む方法が採用されている。The carbonization method for the silicon substrate f[ is Late.
News Abstracts, 1bth Con
ferenceonssDM (SOLID 5TAT
E DEVICES A'N'l]IATERfA
H containing VC0,0496C8H8 on a silicon substrate held at 1360°CK and prayed at normal pressure as disclosed in LD-1-4 (1984)
A method of sending two gases is adopted.
３勺 発ＦＩＡが解決しよつとする問題煮熱るに祈る方
法ではシリコン自体の融点が１４２０℃程度であるにも
かかわらず基板を１３６０℃とシリコンの融点近くまで
ＪＡ−温するため、基板表面が熱点にエツチングされる
という間頂かあり、ま念常圧で行なう息め上記炭化層中
に反応系内の不純物が取り込まれるという開面があっ念
。3. The problem that the FIA is trying to solve is the hot method, which heats the substrate to 1360°C, close to the melting point of silicon, even though the melting point of silicon itself is around 1420°C. There is a possibility that the carbonization layer is etched into the hot spot, and impurities in the reaction system are taken into the carbonization layer when the reaction is carried out at normal pressure.
ま之、このようにシリコン基板がエツチングされたり、
炭化層中に不純物が取り込まれたりすると炭化層上にエ
ピタキシャル成長する成長層への結晶欠陥の導入原因と
なる。Well, the silicon substrate is etched like this,
If impurities are taken into the carbonized layer, this will cause crystal defects to be introduced into the growth layer epitaxially grown on the carbonized layer.
に）問題点を解決するための手段
不発ＢＡけ所る問題点ＫＲみてなされ九ものでその特徴
は超高真空中に配されたシリコン（Ｓｉ）基板を７２０
℃〜８５０℃に保持すると共に上記基板表面にガス圧１
０ Ｔｏｒｒ以下の炭化水素ガスの分子線全供給する
ことにある。2) Measures to solve the problem There are nine things that have been done to solve the problem.
℃ to 850℃ and apply a gas pressure of 1 to the surface of the substrate.
The aim is to supply all molecular beams of hydrocarbon gas below 0 Torr.
（ホ）作 用
祈る方法では超高真空中でかつ低温で炭化層を形成でき
る。(e) With the method of action, a carbonized layer can be formed in an ultra-high vacuum and at low temperatures.
（へ）実施例 第１図は木発明者が行った実験結果を示す。(f) Example Figure 1 shows the results of an experiment conducted by the inventor of the tree.
祈る実験は１０ Ｔｏｒｒ以下の超高真空中にシリコ
ン単結晶基板を配し、祈る基板の温度と祈る基板表面へ
供給するアセチレン（Ｃ２Ｈ２）ガスからなる分子線の
ガス三七と変化させて上記基板表面を炭化させた際の基
板表面をＲＨＥＥＤ（電子線回折〕法で調べ之ものであ
る。−２土弟１図中、×印・・・・・・Ｓｔストリーク
（Ｓｉ単結晶の平坦面）のみが生じる条件
△印−−− −−−ｓ ｔストリークと３Ｃ−ＳｉＣス
ポツト（３Ｃ−ＳｉＣ単結晶の面
）とが混在する条件
○印・・・・・・３Ｃ−ＳｉＣスポツトのみが生じる条
件
■印・・・・・・３Ｃ−ＳｉＣスポツトと３Ｃ−ＳｉＣ
リング（３Ｃ−３ｉＣの多結
晶）とが混在する条件
・印・・・・・・３Ｃ−ＳｉＣ！Ｊングのみが生じる条
件
である。尚、上記各条件における形成時間は約５分とし
である。In the experiment, a silicon single crystal substrate was placed in an ultra-high vacuum of 10 Torr or less, and the temperature of the substrate was changed to a molecular beam gas consisting of acetylene (C2H2) gas supplied to the surface of the substrate. The surface of the substrate was examined by RHEED (electron beam diffraction) after the surface was carbonized. Condition where only △ mark --- ---s Condition where t streak and 3C-SiC spot (surface of 3C-SiC single crystal) coexist ○ mark... Condition where only 3C-SiC spot occurs ■Mark・・・3C-SiC spot and 3C-SiC
Conditions/marks where ring (3C-3iC polycrystal) is mixed...3C-SiC! This is a condition in which only J-ng occurs. The formation time under each of the above conditions was about 5 minutes.
第１図より明らかな如く、基板温度７２０°Ｃ〜８５０
℃、アセチレンガス圧１０ Ｔｏｒｒ以下の条件下で
はシリコン単結晶基板上に３Ｃ−８ｉＣ単結晶のみから
なる炭化層が形成可能である。As is clear from Figure 1, the substrate temperature is 720°C to 850°C.
℃ and acetylene gas pressure of 10 Torr or less, a carbonized layer consisting only of 3C-8iC single crystal can be formed on a silicon single crystal substrate.
尚、３Ｃ−ＳｉＣ単結晶のみが成長可能な条件下でも形
成時間が７分以上となると上記炭化層が多結晶化するこ
とが列用した。Note that even under conditions where only 3C-SiC single crystals can grow, if the formation time is 7 minutes or more, the carbonized layer becomes polycrystalline.
第２図は本発明方法を用いた３Ｃ−３ｉＣ工ビタキシヤ
ρ成長層の製造工程の温度プログラムであり、まず＄１
工程ではバックグランド真空度１０ Ｔｏｒｒ以下
の超高真空中にシリコン単結晶基板を配すると共に祈る
基板１１１００°ＣＫ”保持することにより基板表面を
クリーニングする。Figure 2 shows the temperature program for the manufacturing process of a 3C-3iC engineered bitaxia ρ growth layer using the method of the present invention.
In the process, a silicon single crystal substrate is placed in an ultra-high vacuum with a background vacuum level of 10 Torr or less, and the substrate surface is cleaned by holding the substrate 11100° CK''.
次いで、第２工程では上記基板表面に３Ｃ−８ｉＣ層（
以下炭化層と、を丁）全形成する。具体的には上記基板
温度を８００℃まで降温すると共にガス圧７Ｘ １Ｏ−
６Ｔ ｏ ｒ ｒのアセチレンガスからなる分子線を５
分間基板表面に供給する。これにより基板表面が炭化さ
れ３Ｃ−ＳｉＣ単結晶からなる炭化層が形成される。Next, in the second step, a 3C-8iC layer (
Below, the carbonized layer is completely formed. Specifically, the substrate temperature was lowered to 800°C and the gas pressure was increased to 7X 1O-
A molecular beam consisting of acetylene gas of 6T o r r is
Apply to the substrate surface for a minute. As a result, the surface of the substrate is carbonized and a carbonized layer made of 3C-SiC single crystal is formed.
続く、第３工程では上記基板温度を５００°Ｃまで降温
し、約２０分間保持する。同所る降温保持工程を省略し
て、第２工程直後即座に基板温度全３Ｃ−ＳｉＣ工ピタ
キシーｒ／’Ｕ長層の成長温度である１１５０℃以上に
昇温すると上記炭化１＠けエツチングされ消失する。Subsequently, in the third step, the substrate temperature is lowered to 500° C. and held for about 20 minutes. By omitting the same temperature-lowering and holding step and immediately raising the substrate temperature to 1150°C or higher, which is the growth temperature of the entire 3C-SiC pitaxy r/'U long layer, the carbonization 1@ is etched. Disappear.
最後に第４工程では上記炭化層上に３Ｃ−ＳｉＣエピタ
キシーｒ／Ｌ／成長！（以下単に成長層と称丁）を化成
分子Ｍ法により成長する。具体的には基板温度を１１５
０℃に昇温すると共にアセチレンガスの分子線強度とシ
リコンの分子線強度との比か２０：１となるように上記
各分子線を上記炭化層表面に供給する。祈る条件下では
４０Ａ／ｍｉｎの速度で表面平坦な３ＣＳｉＣ単結晶か
らなる成長層が成長した。Finally, in the fourth step, 3C-SiC epitaxy r/L/grows on the carbonized layer! (hereinafter simply referred to as the growth layer) is grown by the chemical molecular M method. Specifically, the substrate temperature was set to 115
While raising the temperature to 0° C., each of the molecular beams is supplied to the surface of the carbonized layer so that the ratio of the molecular beam intensity of acetylene gas to that of silicon is 20:1. Under the desired conditions, a growth layer consisting of a 3CSiC single crystal with a flat surface grew at a rate of 40 A/min.
（ト）発明の効果
本発明方法では従来に較べて、低温でかつ低圧の条件下
で炭化層を形成できるので、炭化層形成時に基板表面が
エツチングさｒＬ念り、炭化層中図、第２図は本発明の
実施例工程を示ｆ温度プログラムである。(G) Effects of the Invention In the method of the present invention, a carbonized layer can be formed at a lower temperature and lower pressure than the conventional method, so that the substrate surface is not etched when forming the carbonized layer. The figure shows an example process of the present invention and is a temperature program.
出頭大 三＃−電機味式会社
代理人 弁理士 西野卓嗣（外１名）
第１図
６００ ７００ ８００ ９００ ＝ １０００
１１００基秋五Ｌ （℃’）
区 →４鳴粱言
Ｃ律
派Appearance number 3 - Denkimi company agent Patent attorney Takuji Nishino (1 other person) Figure 1 600 700 800 900 = 1000
1100 KishugoL (℃') Ward → 4 Nairiaogon C Ritsuha
Claims (2)
２０℃〜８５０℃に保持すると共に上記基板表面にガス
圧１０＾−＾５Ｔｏｒｒ以下の炭化水素ガスの分子線を
供給することを特徴とする３Ｃ−ＳｉＣ結晶の形成方法
。(1) A silicon (Si) substrate placed in an ultra-high vacuum is
A method for forming a 3C-SiC crystal, characterized by maintaining the temperature at 20° C. to 850° C. and supplying a molecular beam of hydrocarbon gas at a gas pressure of 10^-^5 Torr or less to the surface of the substrate.
ン（Ｃ２Ｈ２）であることを特徴とする３Ｃ−ＳｉＣ結
晶の形成方法。(2) A method for forming a 3C-SiC crystal, characterized in that the hydrocarbon recited in claim 1 is acetylene (C2H2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15239286A JPS638296A (en) | 1986-06-27 | 1986-06-27 | Formation of 3c-sic crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15239286A JPS638296A (en) | 1986-06-27 | 1986-06-27 | Formation of 3c-sic crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS638296A true JPS638296A (en) | 1988-01-14 |
Family
ID=15539512
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15239286A Pending JPS638296A (en) | 1986-06-27 | 1986-06-27 | Formation of 3c-sic crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS638296A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58172446A (en) * | 1982-04-02 | 1983-10-11 | Honda Motor Co Ltd | Operating state control device of internal-combustion engine |
| US5517968A (en) * | 1993-03-16 | 1996-05-21 | Mazda Motor Corporation | Automobile engine control system |
| US5572976A (en) * | 1994-01-21 | 1996-11-12 | Mazda Motor Corporation | Automobile engine control system |
| JPH09263497A (en) * | 1996-03-29 | 1997-10-07 | Denso Corp | Production of silicon carbide single crystal |
| US7287514B2 (en) | 2005-07-19 | 2007-10-30 | Nikki Co., Ltd. | Fuel supply control method and apparatus of internal combustion engine |
| CN103726106A (en) * | 2012-10-11 | 2014-04-16 | 铼钻科技股份有限公司 | Epitaxial growth method |
-
1986
- 1986-06-27 JP JP15239286A patent/JPS638296A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58172446A (en) * | 1982-04-02 | 1983-10-11 | Honda Motor Co Ltd | Operating state control device of internal-combustion engine |
| US5517968A (en) * | 1993-03-16 | 1996-05-21 | Mazda Motor Corporation | Automobile engine control system |
| US5572976A (en) * | 1994-01-21 | 1996-11-12 | Mazda Motor Corporation | Automobile engine control system |
| JPH09263497A (en) * | 1996-03-29 | 1997-10-07 | Denso Corp | Production of silicon carbide single crystal |
| US7287514B2 (en) | 2005-07-19 | 2007-10-30 | Nikki Co., Ltd. | Fuel supply control method and apparatus of internal combustion engine |
| CN103726106A (en) * | 2012-10-11 | 2014-04-16 | 铼钻科技股份有限公司 | Epitaxial growth method |
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