JPS6382416A - Electrophotographic sensitive body - Google Patents
Electrophotographic sensitive bodyInfo
- Publication number
- JPS6382416A JPS6382416A JP22895186A JP22895186A JPS6382416A JP S6382416 A JPS6382416 A JP S6382416A JP 22895186 A JP22895186 A JP 22895186A JP 22895186 A JP22895186 A JP 22895186A JP S6382416 A JPS6382416 A JP S6382416A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- layer region
- region
- substrate
- photoreceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 31
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 230000000737 periodic effect Effects 0.000 claims abstract description 7
- 108091008695 photoreceptors Proteins 0.000 claims description 84
- 229910052799 carbon Inorganic materials 0.000 claims description 47
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 41
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 194
- 239000007789 gas Substances 0.000 description 43
- 229910010271 silicon carbide Inorganic materials 0.000 description 26
- 206010034972 Photosensitivity reaction Diseases 0.000 description 18
- 230000036211 photosensitivity Effects 0.000 description 18
- 238000010586 diagram Methods 0.000 description 13
- 239000010408 film Substances 0.000 description 12
- 238000000354 decomposition reaction Methods 0.000 description 9
- 238000002347 injection Methods 0.000 description 9
- 239000007924 injection Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 125000004429 atom Chemical group 0.000 description 8
- 239000011241 protective layer Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 230000014759 maintenance of location Effects 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 206010070834 Sensitisation Diseases 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000008313 sensitization Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052789 astatine Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08235—Silicon-based comprising three or four silicon-based layers
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は光導電性アモルファスシリコンカーバイド層か
ら成る電子写真感光体に関し、特に正極性に帯電可能な
電子写真感光体に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an electrophotographic photoreceptor comprising a photoconductive amorphous silicon carbide layer, and particularly to an electrophotographic photoreceptor that can be positively charged.
近年、電子写真感光体の進歩は目覚ましく、感光体を搭
載する複写機やプリンター等の開発に伴って感光体自体
にも種々の特性が要求されている。In recent years, progress in electrophotographic photoreceptors has been remarkable, and with the development of copying machines, printers, etc. equipped with photoreceptors, various characteristics are required of the photoreceptors themselves.
この要求に対してアモルファスシリコン層が耐熱性、耐
摩耗性、無公害性並びに光感度特性等に優れているとい
う理由から注目されている。In response to this demand, amorphous silicon layers are attracting attention because they have excellent heat resistance, wear resistance, non-pollution properties, and photosensitivity characteristics.
しかし乍ら、アモルファスシリコン(以下、a−Siと
略す)wiは、それに何ら不純物元素をドーピングしな
いと約109Ω・cn+の暗抵抗値しか得られず、これ
を電子写真用感光体に用いる場合には1g+zΩ・cm
以上の暗抵抗値にして電荷保持能力を高める必要がある
。そのために酸素や窒素などの元素を微少量ドーピング
して高抵抗化にし得るが、その反面、光導電性が低下す
るという問題がある。However, amorphous silicon (hereinafter abbreviated as a-Si) wi only has a dark resistance value of about 109Ω・cn+ unless it is doped with any impurity element, and when used in electrophotographic photoreceptors, is 1g+zΩ・cm
It is necessary to increase the charge retention ability by setting the dark resistance value to a value higher than that. For this purpose, it is possible to increase the resistance by doping a small amount of elements such as oxygen or nitrogen, but on the other hand, there is a problem that the photoconductivity decreases.
また、ホウ素などを添加しても高抵抗化が期待できるが
、十分に満足し得るような暗抵抗値が得られず約10″
Ω・cm程度にすぎない。Furthermore, even if boron or the like is added, high resistance can be expected, but a sufficiently satisfactory dark resistance value cannot be obtained, and the resistance is about 10".
It is only about Ω・cm.
一方、上記の如きドーピング剤の開発と共に、a−Si
光導電層に別の非光導電層を積層して成る積層型感光体
が提案されている。On the other hand, along with the development of doping agents as mentioned above, a-Si
A laminated photoreceptor has been proposed in which a photoconductive layer is laminated with another non-photoconductive layer.
例えば、第2図はこの積層型感光体であり、基板(1)
の上にキャリア注入阻止層(2) 、a−5i先先導層
(3)及び表面保護層(4)が順次積層されている。For example, Figure 2 shows this laminated photoreceptor, with the substrate (1)
A carrier injection blocking layer (2), an a-5i leading layer (3), and a surface protection layer (4) are sequentially laminated thereon.
この積層型光体によれば、キャリア注入阻止N(2)は
基板(1)からのキャリアの注入を阻止するものであり
、表面保護層(4)はa−Si光導電層(3)を保護し
て耐湿性等を向上させるものであるが、両者の層(2)
及び(4)ともに感光体の暗抵抗値を大きくして帯電能
を高めることが目的であり、そのためにこれらの層を光
導電性にする必要はない。According to this laminated optical body, the carrier injection prevention layer N(2) prevents injection of carriers from the substrate (1), and the surface protection layer (4) prevents the a-Si photoconductive layer (3). It protects and improves moisture resistance etc., but both layers (2)
The purpose of both (4) and (4) is to increase the dark resistance value of the photoreceptor to increase the charging ability, and for that purpose, it is not necessary to make these layers photoconductive.
このように従来周知のa−Si電子写真感光体は光キヤ
リア発生層をa−Si光導電層により形成させた点に大
きな特徴があり、これによって耐熱性、耐久性及び光感
度特性などに優れた長所を有している反面、暗抵抗値が
不十分であるためにドーピング剤を用いたり、或いは積
層型感光体にすることで暗抵抗値を大きくしている。即
ち、積層型感光体に形成されるキャリア注入阻止M(2
)及び表面保護M(4)はa−Si光光電電層自体有す
る欠点を補完するものであり、a−5ii導電層(3)
と実質上区別し得る層と言える。As described above, the conventionally well-known a-Si electrophotographic photoreceptor has a major feature in that the photocarrier generation layer is formed of an a-Si photoconductive layer, and as a result, it has excellent heat resistance, durability, and photosensitivity characteristics. However, since the dark resistance value is insufficient, the dark resistance value is increased by using a doping agent or by forming a laminated type photoreceptor. That is, carrier injection blocking M(2
) and surface protection M(4) are to compensate for the defects of the a-Si photovoltaic layer itself, and the a-5ii conductive layer (3)
It can be said that it is a layer that can be practically distinguished.
本発明者等は上記事情に鑑みて鋭意研究の結果、アモル
ファスシリコンカーバイド(以下、a−5iCと略す)
は光導電性を有すると共に暗抵抗値がドーピング剤の有
無と無関係に容易に10I3Ω・0111以上になり、
更にドーピング剤の選択によって正極性に帯電可能な電
子写真感光体と成り得ることを見い出した。In view of the above circumstances, the present inventors have conducted intensive research and found that amorphous silicon carbide (hereinafter abbreviated as a-5iC)
has photoconductivity and the dark resistance value easily becomes 10I3Ω·0111 or more regardless of the presence or absence of a doping agent,
Furthermore, it has been found that by selecting a doping agent, an electrophotographic photoreceptor that can be positively charged can be obtained.
従って、本発明は上記知見に基いて完成されたものであ
り、その目的は大きな暗抵抗値を有する光導電性a−S
iC層から成る電子写真感光体を提供することにある。Therefore, the present invention was completed based on the above findings, and its purpose is to provide a photoconductive a-S having a large dark resistance value.
An object of the present invention is to provide an electrophotographic photoreceptor comprising an iC layer.
本発明の他の目的は表面保ji層及びキャリア注入阻止
層を実質上不要とし、全層に亘って光導電性a−5iC
から成る電子写真感光体を提供することにある。Another object of the present invention is to substantially eliminate the need for a surface retention layer and a carrier injection blocking layer, and to provide photoconductive a-5iC over the entire layer.
An object of the present invention is to provide an electrophotographic photoreceptor comprising:
本発明の更に他の目的は正極性に帯電可能な電子写真感
光体を提供することにある。Still another object of the present invention is to provide an electrophotographic photoreceptor that can be positively charged.
本発明によれば、基板上に0.1乃至10.OOOpp
mの周期律表第11Ia族元素を含有した光導電性アモ
ルファスシリコンカーバイド層を形成したことを特徴と
する正極性に帯電可能な電子写真感光体が提供される。According to the present invention, 0.1 to 10. OOOpp
Provided is an electrophotographic photoreceptor capable of being positively charged, characterized in that a photoconductive amorphous silicon carbide layer containing a group 11Ia element of the periodic table of m is formed.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
本発明の電子写真感光体は薄膜生成手段によって基板上
に光導電性a−SiC層を形成させると大きな暗抵抗値
が得られ、更に周期律表第ma族元素を0.1乃至10
. OOOppm含有させると正極性に帯電することを
特徴とし、第1図はその基本構成となる感光体である。The electrophotographic photoreceptor of the present invention can obtain a large dark resistance value by forming a photoconductive a-SiC layer on a substrate using a thin film forming means, and further contains 0.1 to 10
.. The photoreceptor is characterized in that it is positively charged when it contains OOOppm, and FIG. 1 shows the basic structure of the photoreceptor.
即ち、第1図によれば導電性基板(1)上に、例えばグ
ロー放電分解法によって光導電性a−5iCFJ(5)
を形成したものであり、この層厚方向に亘って炭素と周
期律表第1Ira族元素(以下、ma族元素と略す)を
それぞれ同一含有比率で含有させている。これによって
暗抵抗率が10”cm・Ω以上となると共に明抵抗率に
比べて1000倍以上となることを見い出し、この知見
に基づく後述する実施例から明らかな通り、この単一組
成の層だけで十分に実用性のあるa−SiC感光体と成
り得たことは予想外の成果であった。That is, according to FIG. 1, a photoconductive a-5iCFJ (5) is formed on a conductive substrate (1) by, for example, a glow discharge decomposition method.
Carbon and the elements of the Ira group of the periodic table (hereinafter abbreviated as the Ma group elements) are contained in the same content ratio throughout the layer thickness direction. It was discovered that this resulted in a dark resistivity of 10" cm Ω or more, which was also 1000 times higher than the bright resistivity. As is clear from the examples described below based on this knowledge, only this single composition layer It was an unexpected result that a fully practical a-SiC photoreceptor could be obtained.
更に本発明者等はこのa−SiC感光体を正極性又は負
極性に帯電させて両者の帯電性能を比較した場合、この
a−SiCi!(5)にma族元素を0.1乃至10、
000ppmの範囲、好適には0.1乃至11000p
pの範囲内でドーピングすると正極性で有利に帯電能を
高めることができることも見い出した。Furthermore, when the present inventors charged this a-SiC photoreceptor to positive or negative polarity and compared the charging performance of both, this a-SiCi! (5) 0.1 to 10 of the Ma group element,
000ppm, preferably 0.1 to 11000p
It has also been found that doping within the range of p can advantageously enhance the charging ability with positive polarity.
このようにma族元素のドーピングによって正極性に帯
電し易くなる点については、未だ推論の域を脱し得ない
が、a−SiC層が正電荷を保持するのに十分に高い抵
抗率をもち、また、基板からの負電荷の注入を防ぐ効果
にも優れ、
更に正電荷に対する電荷移動度が優れている等の理由に
よると考えられる。Although it is still a matter of speculation that doping with Ma group elements makes it easier to be positively charged, it is important to note that the a-SiC layer has a sufficiently high resistivity to retain positive charges. This is also thought to be due to the fact that it has an excellent effect of preventing the injection of negative charges from the substrate, and also has excellent charge mobility for positive charges.
また、このma族元素としてはBtAl、Ga、In等
があるが、就中、Bが共有結合性に優れて半導体特性を
敏感に変え得る点で、その上、優れた帯電能及び感度を
有するという点で望ましい。In addition, the MA group elements include BtAl, Ga, In, etc., and B in particular has excellent covalent bonding properties and can sensitively change semiconductor properties, and also has excellent charging ability and sensitivity. It is desirable in that sense.
本発明のa−5iC層が光導電性を有するようになンド
を終端させるべく■やハロゲン元素を所要の範囲内で含
有させることによって光導電性が生じるものと考えられ
る。本発明者等が炭素の含有比率を幾通りにも変えて光
導電性の有無を確かめる実験を行ったところ、a−Si
Cj!(5)中に炭素を1乃至90原子χ、好適には5
乃至50原子χの範囲内で含有させるとよく、或いはこ
の範囲内で層厚方向に亘って炭素含有量を変えてもよい
。It is believed that the a-5iC layer of the present invention exhibits photoconductivity by containing 2 or a halogen element within a required range in order to terminate the bonds so that the a-5iC layer has photoconductivity. When the present inventors conducted experiments to confirm the presence or absence of photoconductivity by varying the carbon content ratio, they found that a-Si
Cj! (5) 1 to 90 atoms of carbon χ, preferably 5
The carbon content may be in the range of 50 to 50 atoms χ, or the carbon content may be varied in the layer thickness direction within this range.
また、Hやハロゲン元素の含有量は5乃至50原子χ、
好適には5乃至40原子χ、最適には10乃至30原子
2がよく、通常、Hが用いられている。このHはダング
リングボンドの終端部に取込まれ易いのでバンドギャッ
プ中の局在単位密度を低減化させ、これにより、優れた
半導体特性が得られる。In addition, the content of H and halogen elements is 5 to 50 atoms χ,
Preferably 5 to 40 atoms χ, optimally 10 to 30 atoms 2, and H is usually used. Since this H is easily incorporated into the terminal portion of the dangling bond, the localized unit density in the band gap is reduced, thereby providing excellent semiconductor properties.
更にこのHの一部をハロゲン元素に置換してもよく、こ
れにより、a−SiC層の局在準位密度を下げて光導電
性及び耐熱性(温度特性)を高めることができる。その
置換比率はダングリングボンド終端用全元素中0.01
乃至50原子χ、好適にはl乃至30原子χがよい、ま
た、このハロゲン元素にはF、CI、Br、I、At等
があるが、就中、Fを用いるとその大きな電気陰性度に
よって原子間の結合が大きくなり、これによって熱的安
定性に優れるという点で望ましい。Furthermore, a part of this H may be replaced with a halogen element, whereby the localized level density of the a-SiC layer can be lowered and the photoconductivity and heat resistance (temperature characteristics) can be improved. Its substitution ratio is 0.01 among all elements for dangling bond termination.
50 atoms χ, preferably 1 to 30 atoms χ.Furthermore, this halogen element includes F, CI, Br, I, At, etc. Among them, when F is used, due to its large electronegativity, This is desirable because it increases the bonding between atoms and provides excellent thermal stability.
また、光導電性a−SiC(5)の厚みは、少なくとも
5μm以上あればよく、これによって表面電位が+20
0v以上となり、一方、このN(5)の厚みは画像の分
解能及び画像流れが生じない範囲内でその上限が適宜選
ばれており、本発明者等の実験によれば、5乃至100
μm1好適には10乃至50μmの範囲内に設定すると
よい。Further, the thickness of the photoconductive a-SiC (5) should be at least 5 μm or more, which increases the surface potential by +20 μm.
On the other hand, the upper limit of the thickness of N(5) is appropriately selected within the range of image resolution and image blurring, and according to experiments conducted by the present inventors, the thickness of N(5) is 5 to 100 V.
μm1 is preferably set within the range of 10 to 50 μm.
そして、このa−5iC層の分光感度特性、並びに暗減
衰曲線及び光減衰曲線を求めたところ、前者については
可視光領域で分光感度ピーク(ピーク波長約670nm
)があり、これによって複写機用光源として一般的に
用いられているタングステンランプに十分に適用し得る
ことが判った。また、後者の減衰曲線についても高い表
面電位をもつと共に優れた光感度特性を有し、更に残留
電位が小さくなっていることが判った。When we determined the spectral sensitivity characteristics, dark decay curve, and light decay curve of this a-5iC layer, we found that the former has a spectral sensitivity peak (peak wavelength of approximately 670 nm) in the visible light region.
), and it has been found that this can be fully applied to tungsten lamps commonly used as light sources for copying machines. It was also found that the latter decay curve also had a high surface potential, excellent photosensitivity characteristics, and a small residual potential.
かくして、単一組成の光導電性a−5iC層だけで十分
に実用と成り得る電子写真感光体が提供される。In this way, an electrophotographic photoreceptor is provided which can be put into practical use with just a photoconductive a-5iC layer having a single composition.
そこで、本発明者等は上記の結果を踏まえて、更に鋭意
研究に努めたところ、この単一組成の層内部に種々の層
領域を生成させることによって電子写真特性を更に向上
し得ることを見い出した。Therefore, based on the above results, the present inventors conducted further intensive research and discovered that the electrophotographic characteristics could be further improved by creating various layer regions within this single composition layer. Ta.
即ち、本発明の電子写真感光体においては、構成元素で
ある炭素又はma族元素の含有比率を層厚方向に亘って
変化させ、これによって複数の層領域を生成させ、この
・層領域の数に対応して下記の第1の態様乃至第4の態
様までの電子写真感光体が得られる。That is, in the electrophotographic photoreceptor of the present invention, the content ratio of carbon or the Ma group element as a constituent element is varied in the layer thickness direction, thereby producing a plurality of layer regions, and the number of layer regions is increased. Accordingly, electrophotographic photoreceptors according to the following first to fourth embodiments are obtained.
以下、本発明に係る電子写真感光体の態様を第3図乃至
24図により説明する。Hereinafter, embodiments of the electrophotographic photoreceptor according to the present invention will be explained with reference to FIGS. 3 to 24.
筆上皇皿揉
第1の態様によれば、基板上に光導電性a−SiC層を
形成した電子写真感光体であって、前記a−5i0層は
少なくとも第1の層領域及び第2の層領域を具備し、第
1の層領域は第2の層領域より基板側に配置され且つ第
2の層領域に比べてI[[a族元素が多く含まれている
ことを特徴とする正極性に帯電可能な電子写真感光体が
提供される。According to a first aspect of the present invention, there is provided an electrophotographic photoreceptor in which a photoconductive a-SiC layer is formed on a substrate, wherein the a-5i0 layer covers at least a first layer region and a second layer region. The first layer region is disposed closer to the substrate than the second layer region, and has a positive polarity characterized by containing a larger amount of group I[[A group elements than the second layer region. An electrophotographic photoreceptor that can be charged is provided.
即ち、この第1の態様によれば、第1図に示した単一組
成の光導電性a−SiC層に対してIIIa族元素を含
有させ、これに伴ってその含有比率を変えることにより
少なくとも第1の層領域及び第2の層領域を生成させる
ものであり、この態様を第3図乃至第9図により説明す
る。That is, according to this first aspect, by incorporating a group IIIa element into the photoconductive a-SiC layer having a single composition shown in FIG. 1 and changing the content ratio accordingly, at least This method generates a first layer region and a second layer region, and this aspect will be explained with reference to FIGS. 3 to 9.
第3図においては導電性基板(1)上に第1の層領域(
6)及び第2の層領域(7)を順次形成し、両者の層領
域が一体化した光導電性a−5iC層(5a)から成っ
ており、そして、第1のN jI域(6)には第2の層
領域(7)に比べてma族元素が多く含まれていること
が重要である。In FIG. 3, a first layer region (
6) and a second layer region (7) are successively formed, both layer regions consisting of an integrated photoconductive a-5iC layer (5a), and a first N jI region (6). It is important that the second layer region (7) contains more Ma group elements than the second layer region (7).
第2の層領域(7)はma族元素の含有量が0.1乃至
10,000ppmの範囲内で、好適には0.1乃至1
゜000 ppmの範囲内で適宜法められ、これによっ
て正極性に帯電すると共に表面電位、光感度特性等の所
要な電子写真特性が得られる。そして、この層領域より
もI[Ia族元素を多く含有した第1の層領域(6)を
形成すると、光導電性a−5iC層(5a)の基板側領
域で導電率が大きくなり、これにより、基板側からのキ
ャリアの注入が阻止されると共にa−SiC層の全領域
で発生した光キャリアが基板へ円滑に流れ、その結果、
表面電位が大きくなると共に光感度特性が向上すること
を見い出した。The second layer region (7) has a content of Ma group elements in the range of 0.1 to 10,000 ppm, preferably 0.1 to 1
It is suitably controlled within the range of 0.000 ppm, and as a result, it is positively charged and required electrophotographic properties such as surface potential and photosensitivity properties are obtained. When the first layer region (6) containing more I[Ia group elements than this layer region is formed, the conductivity increases in the substrate side region of the photoconductive a-5iC layer (5a), and this This prevents the injection of carriers from the substrate side, and allows photocarriers generated in the entire area of the a-SiC layer to flow smoothly to the substrate, resulting in
It has been found that as the surface potential increases, the photosensitivity characteristics improve.
この第1の層領域(6)はその領域全体に亘って光導電
性を有しており、これによって第2図に示した従来のa
−St電子写真感光体のキャリア注入阻止層(2)と区
別し得る。This first layer region (6) is photoconductive over its entire region, which makes it possible to avoid the conventional a shown in FIG.
It can be distinguished from the carrier injection blocking layer (2) of the -St electrophotographic photoreceptor.
即ち、第1の層領域(6)はその領域全体の光導電性に
よって光感度特性を全般に亘って向上させる。特に、第
10H9N域(6)に到達し易い比較的長波長な光に対
しては優れた光感度特性が得られ、これにより、半導体
レーザーを記録用光源とした電子写真感光体に好適とな
る。That is, the first layer region (6) improves the photosensitivity characteristics over the whole area due to the photoconductivity of the entire region. In particular, excellent photosensitivity characteristics can be obtained for relatively long wavelength light that easily reaches the 10H9N region (6), making it suitable for electrophotographic photoreceptors using semiconductor lasers as recording light sources. .
また、従来のa−3t電子写真感光体によれば、前記キ
ャリア注入阻止層(2)の層厚をa−St光導電層(3
)に対して175倍以下に設定するのに対して、本発明
の電子写真感光体によれば、第1のJLfN域(6)の
層厚は第2の層領域(7)に比べて1倍以下であっても
十分に残留電位を小さくして光感度特性を向上させるこ
とができ、その好適な層厚比は172以下、最適には1
74以下に設定するのがよい。Further, according to the conventional a-3T electrophotographic photoreceptor, the layer thickness of the carrier injection blocking layer (2) is reduced to
), whereas according to the electrophotographic photoreceptor of the present invention, the layer thickness of the first JLfN region (6) is set to be 175 times or less than that of the second layer region (7). It is possible to sufficiently reduce the residual potential and improve the photosensitivity characteristics even if the layer thickness ratio is less than 1.5 times, and the preferred layer thickness ratio is 172 or less, optimally 1.
It is best to set it to 74 or less.
この光導電性a−3iC層(5a)の炭素含有量は、第
4図乃至第9図に示す通りであり、横軸は基板から感光
体表面に至る層厚方向を示し、縦軸は炭素含有量を示し
ている。尚、この横軸において(6)。The carbon content of this photoconductive a-3iC layer (5a) is as shown in FIGS. It shows the content. Note that (6) on this horizontal axis.
(7)に示すそれぞれの範囲は第1の層領域及び第2の
層領域を表している。Each range shown in (7) represents a first layer region and a second layer region.
即ち、第4図は炭素含有比率が全層に亘って一定であり
、或いは第5図は第1の層領域で炭素含有量を少な(し
ており、これに対して第6図乃至第9図は第1の層領域
が第2の層領域に比べて炭素が多く含有されていること
を示すものであり、これによって表面電位が一段と高く
なって光感度特性が向上する。また、第7図乃至第9図
のように炭素の含有量を層厚方向に亘って漸次変えると
表面電位及び光感度を一層高め且つ残留電位が小さくな
る。That is, in FIG. 4, the carbon content ratio is constant throughout the entire layer, or in FIG. 5, the carbon content is small in the first layer region, whereas in FIGS. The figure shows that the first layer region contains more carbon than the second layer region, which further increases the surface potential and improves the photosensitivity characteristics. If the carbon content is gradually changed in the layer thickness direction as shown in FIGS. 9 to 9, the surface potential and photosensitivity will be further increased and the residual potential will be reduced.
また、前記第1の層領域(6)には酸素や窒素の少なく
とも一種を含有させてもよく、これによってa−5iC
層(5a)の基板(1)に対する密着性が向上する。Further, the first layer region (6) may contain at least one of oxygen and nitrogen, so that the a-5iC
The adhesion of the layer (5a) to the substrate (1) is improved.
第2の態様
第2の態様によれば、基板上に光導電性a−5iC層を
形成した電子写真感光体であって、前記a−5iC層は
少なくとも第1の層領域、第2の層令頁域及び第3の層
領域を具備し、第1の層領域は第2の層領域より、第2
の層領域は第3の層領域よりそれぞれ基板側に配置され
、且つ第3の層領域は第2の層領域に比べて炭素が多く
含まれていると共に第2の層領域は0.1乃至10.
OOOppmのIIIa族元素が含まれており、更に第
1の層領域は第2の層領域よりもma族元素が多く含ま
れていることを特徴とする正極性に帯電可能な電子写真
感光体が提供される。Second Aspect According to a second aspect, there is provided an electrophotographic photoreceptor in which a photoconductive a-5iC layer is formed on a substrate, wherein the a-5iC layer covers at least a first layer region and a second layer region. The first layer area has a smaller page area and a third layer area, and the first layer area has a lower page area than the second layer area.
The layer regions are arranged closer to the substrate than the third layer region, and the third layer region contains more carbon than the second layer region, and the second layer region contains carbon of 0.1 to 10.
An electrophotographic photoreceptor capable of being charged to a positive polarity is characterized in that the first layer region contains a group IIIa element of OOOppm and the first layer region contains a larger amount of a group ma element than the second layer region. provided.
即ち、この第2の態様によれば、第10図に示す通り、
第1の態様にて示した第2の層領域(7)の上に更に第
3の層領域(8)を形成し、これに伴って第3の層領域
(8)の炭素含有量を第2の層領域(7)よりも多くし
、そして、第1の層領域(6)、第2の層領域(7)及
び第3の層領域(8)を実質上一体化して光導電性a−
SiCpJ(5b)とした。That is, according to this second aspect, as shown in FIG.
A third layer region (8) is further formed on the second layer region (7) shown in the first embodiment, and the carbon content of the third layer region (8) is accordingly increased. and the first layer region (6), the second layer region (7) and the third layer region (8) are substantially integrated to form a photoconductive a. −
It was designated as SiCpJ (5b).
この第3の層領域(8)を形成すると、a−3iC層(
5b)の表面側の暗抵抗値が大きくなり、これに伴って
感光体の表面電位が顕著に向上することを見い出した。When this third layer region (8) is formed, the a-3iC layer (
It has been found that the dark resistance value on the surface side of 5b) increases, and the surface potential of the photoreceptor increases markedly.
即ち、第3の層領域(8)は、光導電性a−SiCN(
5b)の表面側を高抵抗化させるために形成されており
、第2図にて述べた従来周知の表面保護N(4)とは全
く区別し得るものである。また、光キヤリア発生層とキ
ャリア輸送層とに分1すられた機能分離型感光体によれ
ば、キャリア輸送層を10”Ω・C11以上に高抵抗化
させるが、この層に格別大きな光導電性が要求されてお
らず、通常、光導電率の暗導電率に対する比率が100
0倍未満の光導電性に設定されているに過ぎない。これ
に対して、第3の層領域(8)はこの比率が1000倍
以上の光導電性を有しており、上記キャリア輸送層に対
しても十分に区別し得る。That is, the third layer region (8) is made of photoconductive a-SiCN (
5b) is formed to increase the resistance on the surface side, and can be completely distinguished from the conventional well-known surface protection N(4) described in FIG. In addition, according to a functionally separated photoreceptor in which the photocarrier generation layer and the carrier transport layer are separated, the carrier transport layer has a high resistance of 10"Ω・C11 or more, but this layer has an extremely large photoconductivity. Normally, the ratio of photoconductivity to dark conductivity is 100.
The photoconductivity is only set to be less than 0 times. On the other hand, the third layer region (8) has a photoconductivity that is 1000 times higher in this ratio or more, and can be sufficiently distinguished from the carrier transport layer.
第3の層領域(8)の層厚は、第2の層領域(7)に比
べて1倍以下、好ましくは1/2倍以下、最適には1/
4倍以下がよく、これにより、表面電位が顕著に向上す
ると共に光感度に優れ、且つ残留電位が小さくなり、望
ましいと言える。The layer thickness of the third layer region (8) is not more than 1 times, preferably not more than 1/2 times, optimally not more than 1/2 times, compared to the second layer region (7).
4 times or less is preferable, and this can be said to be desirable because the surface potential is significantly improved, the photosensitivity is excellent, and the residual potential is small.
本発明によれば、光導電性a−SiC層(5b)の炭素
含有分布は第11図乃至第16図に示す通りであり、横
軸は基板から感光体表面に至る層厚方向を示し、縦軸は
炭素含有量を示している。尚、この横軸において、(6
) (7) (8)に示すそれぞれの範囲は第1の層領
域、第2の1!領域及び第3の層領域を表している。According to the present invention, the carbon content distribution of the photoconductive a-SiC layer (5b) is as shown in FIGS. 11 to 16, where the horizontal axis indicates the layer thickness direction from the substrate to the surface of the photoreceptor, The vertical axis shows carbon content. Furthermore, on this horizontal axis, (6
) (7) Each range shown in (8) is the first layer region, the second 1! area and the third layer area.
第12図、第14図、第15図及び第16図は層厚方向
に亘って炭素の含有量を漸次変え、これにより、表面電
位が向上すると共に光感度に優れ、且つ残留電位が小さ
くなる。Figures 12, 14, 15, and 16 show that the carbon content is gradually changed in the layer thickness direction, which improves the surface potential, provides excellent photosensitivity, and reduces residual potential. .
】主Jυl擾
第3の態様によれは、基板上に光導電性a−SiC層を
形成した電子写真感光体であって、前記a−5iC層は
少なくとも第1の層領域、第2のII層領域第3の層領
域、第4の層領域を基板側から感光体表面へ向けて順次
具備し且つ第3の層領域は第2の層領域に比べて、第4
の層領域は第3のN 領域に比べてそれぞれ炭素が多く
含まれていると共に第2の層領域は0.1乃至10.0
001)pHのma族元素が含まれており、更に第1の
層領域は第2の層領域よりもma族元素が多く含まれて
いることを特徴とする正極性に帯電可能な電子写真感光
体が提供される。According to a third aspect of the present invention, there is provided an electrophotographic photoreceptor in which a photoconductive a-SiC layer is formed on a substrate, wherein the a-5iC layer is formed in at least a first layer region and a second layer region. The layer region includes a third layer region and a fourth layer region sequentially from the substrate side toward the photoreceptor surface, and the third layer region has a fourth layer region compared to the second layer region.
The layer regions each contain more carbon than the third N2 region, and the second layer region contains 0.1 to 10.0 carbon.
001) An electrophotographic photosensitive material capable of being positively charged, characterized in that the first layer region contains a MA group element having a pH value, and the first layer region contains a larger amount of the MA group element than the second layer region. The body is provided.
即ち、第3の態様によれば、第17図に示す通り、第2
の態様にて示した第3の層領域(8)の上に更に第4の
層領域(9)を形成し、これに伴って第4の層領域(9
)が第3の16M域(8)に比べて炭素を多く含んでお
り、そして、第1の層領域(6)から第4の層領域(9
)を実質上一体化して光導電性a−SiC層(5c)と
した。That is, according to the third aspect, as shown in FIG.
A fourth layer region (9) is further formed on the third layer region (8) shown in the embodiment, and accordingly, a fourth layer region (9) is formed.
) contains more carbon than the third 16M region (8), and the region from the first layer region (6) to the fourth layer region (9) contains more carbon than the third 16M region (8).
) were substantially integrated to form a photoconductive a-SiC layer (5c).
この第4の層領域(9)は第3の層領域(8)に比べて
炭素を多く含有させて高抵抗化させ、これより、帯電能
を高めて表面電位を向上させることができ、その結果、
耐電圧が高くて長寿命の感光体を得ることができる。This fourth layer region (9) contains more carbon than the third layer region (8) and has a high resistance, thereby increasing the charging ability and improving the surface potential. result,
A photoreceptor with high withstand voltage and long life can be obtained.
本発明によれば、光導電性a−5iC層(5c)の炭素
含有分布は第18図乃至第21図に示す通りであり、横
軸は基板から感光体表面に至る層厚方向を示し、縦軸は
炭素含有量を示している。尚、この横軸において、(6
) (7) (8) (9)に示すそれぞれの範囲は第
1の層領域、第2の層領域、第3のFi!領域及び第4
の領域を表している。According to the present invention, the carbon content distribution of the photoconductive a-5iC layer (5c) is as shown in FIGS. 18 to 21, where the horizontal axis indicates the layer thickness direction from the substrate to the surface of the photoreceptor, The vertical axis shows carbon content. Furthermore, on this horizontal axis, (6
) (7) (8) The respective ranges shown in (9) are the first layer region, the second layer region, and the third Fi! area and fourth
represents the area of
第19図及び第21図はMW方向に亘って炭素の含有量
を漸次変え、これにより、表面電位及び光感度が向上し
、且つ残留電位が小さくなる。In FIGS. 19 and 21, the carbon content is gradually changed in the MW direction, thereby improving the surface potential and photosensitivity, and reducing the residual potential.
策虹■■撲
第4図の態様によれば、基板上に光導電性a−StC層
及びa−SiC表面保護層を順次形成した電子写真感光
体であって、前記a−5iC層は少なくとも第1のi領
域、第2の層領域及び第3の層領域を具備し、第1の層
領域は第2の層領域より基板側に、第2の領域は第3の
層領域より基板側にそれぞれ配置され、且つ第3の層領
域は第2の層領域に比べて炭素が多く含まれていると共
に第1の層領域は0.1乃至10.0OOppr@のm
a族元素が含まれており、更に第1の層領域は第2の層
領域よりもma族元素が多く含まれていることを特徴と
する正極性に帯電可能な電子写真感光体が提供される。According to the embodiment shown in FIG. 4, there is provided an electrophotographic photoreceptor in which a photoconductive a-StC layer and an a-SiC surface protection layer are sequentially formed on a substrate, wherein the a-5iC layer includes at least It comprises a first i region, a second layer region, and a third layer region, the first layer region being closer to the substrate than the second layer region, and the second region being closer to the substrate than the third layer region. and the third layer region contains more carbon than the second layer region, and the first layer region has an m of 0.1 to 10.0 OOppr@.
Provided is an electrophotographic photoreceptor capable of being positively charged, characterized in that the first layer region contains a group A element, and the first layer region contains a larger amount of the group M element than the second layer region. Ru.
即ち、この第4の態様によれば、第22図に示す通り、
第2の態様にて示した第3の層領域(8)の上に更にa
−3iC表面保護層(10)を形成したものであり、こ
のa−SiC表面保護層(10)は光導電性a−3tC
層(5b)の表面をオーバーコートして保護するために
形成される。That is, according to this fourth aspect, as shown in FIG.
Further a on the third layer region (8) shown in the second embodiment
-3iC surface protective layer (10) is formed, and this a-SiC surface protective layer (10) is made of photoconductive a-3tC.
It is formed to overcoat and protect the surface of layer (5b).
a−SiC表面保護層(10)はa−3iCから成ると
いう点では光導電性a−5iCN(5b)と同じである
が、炭素の含有量を多くして高硬度とし、これによって
表面保護作用をもたらす。The a-SiC surface protection layer (10) is the same as the photoconductive a-5iCN (5b) in that it is made of a-3iC, but it has a higher carbon content to achieve high hardness, which improves the surface protection effect. bring about.
このa−SiC表面保護層(10)は、その構成元素の
組成比を変えて光導電性又は非光導電性とすることがで
き、炭素の含有量を多くすると非光導電性になる傾向が
あり、これに伴って高硬度特性が得られ、高硬度a−5
iC表面保護層となる。This a-SiC surface protective layer (10) can be made photoconductive or non-photoconductive by changing the composition ratio of its constituent elements; increasing the carbon content tends to make it non-photoconductive. With this, high hardness characteristics are obtained, and high hardness is A-5.
It becomes an iC surface protective layer.
第4の態様によれば、炭素含有分布は第23図及び第2
4図に示す通りであり、横軸は基板から感光体表面に至
る層厚方向を示し、縦軸は炭素含有量を示している。尚
、この横軸において(6) (7) (8) (10)
に示すそれぞれの範囲は第1の層領域、第2の層領域、
第3の層領域及びa−SiC表面保護層を表している。According to the fourth aspect, the carbon content distribution is shown in FIGS.
As shown in FIG. 4, the horizontal axis indicates the layer thickness direction from the substrate to the surface of the photoreceptor, and the vertical axis indicates the carbon content. Furthermore, on this horizontal axis (6) (7) (8) (10)
The respective ranges shown in are the first layer region, the second layer region,
It represents the third layer region and the a-SiC surface protection layer.
本発明によれば、単一組成のa−SiC層並びに第1乃
至第3の態様のa−SiCiJは、いずれも光導電性a
−SiC層から成り、これによって十分実用的な電子写
真特性が得られるが、これらのa−SiC層の表面上に
従来周知の表面保護層を形成してもよい。この層はそれ
自体高絶縁性、高耐食性及び高硬度特性を有するもので
あれば種々の材料を用いることができ、例えばポリイミ
ド樹脂などの有機材料+ a −S I C+ S i
Oz + S i O+ A 1 z Os + S
i C+ S 1 z N a + a −S 1 +
a −S i:H,a−3t :F、 a−SiC:
H,;a−5iC:Fなどの無機材料を用いることがで
きる。According to the present invention, the a-SiC layer of a single composition and the a-SiCiJ of the first to third aspects are both photoconductive a
-SiC layers, which provide sufficient practical electrophotographic properties, but a conventionally known surface protective layer may be formed on the surface of these a-SiC layers. Various materials can be used for this layer as long as they themselves have high insulating properties, high corrosion resistance, and high hardness properties, such as organic materials such as polyimide resin + a - S I C + S i
Oz + S i O + A 1 z Os + S
i C+ S 1 z Na + a −S 1 +
a-Si:H, a-3t:F, a-SiC:
Inorganic materials such as H,;a-5iC:F can be used.
次に本発明の電子写真感光体の製法を述べる。Next, a method for manufacturing the electrophotographic photoreceptor of the present invention will be described.
本発明に係るa−3iCNを形成するに当たってグロー
放電分解法、イオンブレーティング法、反応性スパッタ
リング法、真空蒸着法、CVD法などの薄膜生成技術を
用いることができ、また、これに用いられる原料には固
体、液体、気体のいずれでもよい。例えば、グロー放電
分解法に用いられる気体原料としてSiH4,5izH
b、5iJsなどのSt系ガス、CH4,Cd4.Cz
tlz、CzH61CJsなどのC系ガスを用いればよ
く、更にH2+ He+ Ne、 Arなどをキャリア
ーガスとして用いてもよい。In forming a-3iCN according to the present invention, thin film production techniques such as glow discharge decomposition method, ion blating method, reactive sputtering method, vacuum evaporation method, and CVD method can be used, and the raw materials used therein may be solid, liquid, or gas. For example, SiH4,5izH is used as a gaseous raw material used in glow discharge decomposition method.
b, St-based gas such as 5iJs, CH4, Cd4. Cz
A C-based gas such as tlz or CzH61CJs may be used, and H2+ He+ Ne, Ar, or the like may also be used as a carrier gas.
また、a−SiC膜をグロー放電分解法により形成する
場合、その原料にSiH4ガス及びC,H,ガスを用い
れば大きい成膜速度(約5乃至20μm7時)が得られ
、これにより、その成膜時間を著しく小さくすることが
できる。因にSiH・4ガスとCLカスを用いてa−S
iC膜を生成した場合、その成膜速度は約0.3乃至1
μIIlノ時である。Furthermore, when forming an a-SiC film by the glow discharge decomposition method, a high film formation rate (approximately 5 to 20 μm 7 hours) can be obtained by using SiH4 gas and C, H, gas as the raw materials. The membrane time can be significantly reduced. Incidentally, using SiH・4 gas and CL residue, a-S
When an iC film is formed, the film formation rate is approximately 0.3 to 1
It is the time of μIIl.
更に本発明の実施例に用いられる容量結合型グロー放電
分解装置を第25図により説明する。Further, a capacitively coupled glow discharge decomposition device used in an embodiment of the present invention will be explained with reference to FIG.
図中、第1.第2.第3.第4.第5.第6タンク(1
1) (12) (13) (14) (15) (1
6)には、それぞれSiH4,Cdh+BzHh(Hz
ガス希釈で0.2χ含有)、BzHb(Hzガス希釈で
38ppm含有)、H2,NOガスが密封されており、
H2はキャリアーガスとしても用いられる。これらのガ
スは対応する第1.第2.第3.第4.第5.第6調整
弁(17) (1B) (19) (20) (21)
(22)を開放することにより放出され、その流量が
マスフローコントローラ(23)(24)(25)(2
6) (27) (28)により制御され、第、、第2
.第3.第4.第5タンク(11) (12) (13
) (14) (15)からのガスは第1主管(29)
へ、第6タンク(16)からのNOガスは第2主管(3
0)へ送られる。尚、(31)(32)は止め弁である
。第1主管(29)及び第2主管(30)を通じて流れ
るガスは反応管(33)へと送り込まれるが、この反応
管(33)の内部には容量結合型放電用電極(34)が
設置されており、それに印加される高周波電力は5〇−
乃至3Kwが、また周波数はl MHz乃至10MHz
が適当である。反応管(33)の内部には、アルミニウ
ムから成る筒状の成膜基板(35)が試料保持台(36
)の上に載置されており、この保持台(36)はモータ
ー(37)により回転駆動されるようになっており、そ
して、基板(35)は適当な加熱手段により、約200
乃至400℃好ましくは約200乃至350℃の温度に
均一に加熱される。更に、反応管(33)の内部はa−
SiC膜形成時に高度の真空状態(放電圧0.1乃至2
.0Torr )を必要とすることにより回転ポンプ(
38)と拡散ポンプ(39)に連結されている。In the figure, 1st. Second. Third. 4th. Fifth. 6th tank (1
1) (12) (13) (14) (15) (1
6), SiH4, Cdh+BzHh (Hz
Contains 0.2χ when diluted with gas), BzHb (contains 38ppm when diluted with Hz gas), H2, and NO gas are sealed.
H2 is also used as a carrier gas. These gases correspond to the first. Second. Third. 4th. Fifth. Sixth regulating valve (17) (1B) (19) (20) (21)
(22) is released by opening the mass flow controller (23) (24) (25) (2
6) (27) Controlled by (28), the second, second
.. Third. 4th. 5th tank (11) (12) (13)
) (14) The gas from (15) is transferred to the first main pipe (29)
The NO gas from the 6th tank (16) is transferred to the 2nd main pipe (3
0). Note that (31) and (32) are stop valves. Gas flowing through the first main pipe (29) and the second main pipe (30) is sent into the reaction tube (33), and a capacitively coupled discharge electrode (34) is installed inside this reaction tube (33). The high frequency power applied to it is 50-
~3Kw, and frequency is lMHz~10MHz
is appropriate. Inside the reaction tube (33), a cylindrical film-forming substrate (35) made of aluminum is placed on a sample holder (36).
), this holding stand (36) is driven to rotate by a motor (37), and the substrate (35) is heated to about 200 degrees by a suitable heating means.
It is heated uniformly to a temperature of from 400°C to 400°C, preferably from about 200°C to 350°C. Furthermore, the inside of the reaction tube (33) is a-
A high degree of vacuum condition (discharge voltage 0.1 to 2
.. By requiring a rotary pump (0 Torr)
38) and a diffusion pump (39).
以上のように構成されたグロー放電分解装置において、
例えば、a−3iC膜(Bを含有する)を基板(35)
に形成する場合には、第1.第2.第3.第5調整弁(
17) (1B) (19) (21)を開いてそれぞ
れよりSiH4゜Czth、BJh、Hzガスを放出す
る。放出量はマスフローコントローラ(23) (24
) (25) (27)により制御され、5iHt+C
Jz+BzHh+)lxの混合ガスは第1主管(29)
を介して反応管(33)へと流し込まれる。そして、反
応管(33)の内部が0.1乃至2.0Torr程度の
真空状態、基板温度が200乃至400℃、容量型放電
用電l (34)の高周波電力が50W乃至3Kw 、
または周波数が1乃至10M1lzに設定されているこ
とに相俟ってグロー放電が起こり、ガスが分解してBを
含有したa−3iC膜が基板上に高速で形成される。In the glow discharge decomposition device configured as above,
For example, an a-3iC film (containing B) is placed on the substrate (35).
1. Second. Third. Fifth regulating valve (
17) (1B) (19) Open (21) and release SiH4°Czth, BJh, and Hz gases from each. The release amount is determined by the mass flow controller (23) (24
) (25) (27), 5iHt+C
The mixed gas of Jz+BzHh+)lx is sent to the first main pipe (29)
and into the reaction tube (33). Then, the inside of the reaction tube (33) is in a vacuum state of about 0.1 to 2.0 Torr, the substrate temperature is 200 to 400°C, and the high frequency power of the capacitive discharge electric current (34) is 50 W to 3 Kw.
Alternatively, glow discharge occurs in conjunction with the frequency being set to 1 to 10M1lz, gas is decomposed, and an a-3iC film containing B is formed on the substrate at high speed.
次に本発明の実施例を詳細に説明する。 Next, embodiments of the present invention will be described in detail.
(例1)
本例においては、光導電性a−5iC層をアルミニウム
製成膜基板に生成し、そのCtHtガスの配合比率に対
する導電率を測定した。(Example 1) In this example, a photoconductive a-5iC layer was formed on an aluminum film-forming substrate, and its conductivity with respect to the blending ratio of CtHt gas was measured.
即ち、第25図に示した容量結合型グロー放電分解装置
を用いて第1タンク(11)よりSin、ガスを101
00acの流量で、第5タンク(15)よりH2ガスを
300secmの流量で放出し、第2タンク(12)よ
りCJzガスをlO〜100scc+wの流量で放出し
、グロー放電分解法に基いてa−3iC膜を約5μ輪の
厚みで、暗導電率及び光導電率を測定したところ、第2
6図に示す通りの結果が得られた。尚、製造条件として
基板温度を300℃、ガス圧を0.45Torr、高周
波電力を150Wに設定した。That is, using the capacitively coupled glow discharge decomposition apparatus shown in FIG.
At a flow rate of 00ac, H2 gas is released from the fifth tank (15) at a flow rate of 300sec, and CJz gas is released from the second tank (12) at a flow rate of lO~100scc+w, and a- When we measured the dark conductivity and photoconductivity of the 3iC film with a thickness of approximately 5μ, we found that the second
The results shown in Figure 6 were obtained. As manufacturing conditions, the substrate temperature was set to 300° C., the gas pressure was set to 0.45 Torr, and the high frequency power was set to 150 W.
第26図によれば、横軸にCIH!ガス流量(sccm
)を、縦軸に導電率〔(Ω・cm)−’]を表わし、・
印は暗導電率のプロット、O印は光導電率のプロットで
あり、a、bはそれぞれの特性曲線である。According to FIG. 26, the horizontal axis shows CIH! Gas flow rate (sccm
), the vertical axis represents the conductivity [(Ω・cm)-'],
The mark is a plot of dark conductivity, the mark O is a plot of photoconductivity, and a and b are respective characteristic curves.
第26図から明らかな通り、暗導電率は10−”ff(
Ω・c+n)−’以上と成り得、最大で10−”(Ω・
cm)−’以上まで得られた。また、光導電率は暗導電
率に比べて1000倍以上となり、このa−5iC層が
電子写真感光体用として十分に満足し得る光導電性をも
っていることが判る。As is clear from FIG. 26, the dark conductivity is 10-”ff(
It can be greater than Ω・c+n)−′, and the maximum is 10−”(Ω・
cm)-' or more. Further, the photoconductivity was 1000 times or more as compared to the dark conductivity, indicating that this a-5iC layer had photoconductivity sufficiently satisfactory for use in electrophotographic photoreceptors.
(例2)
本例においては、(例1)に基いてBJbガス(又はP
H3ガス)を導入して暗導電率及び光導電率を測定した
ところ、第27図に示す通りの結果が得られた。(Example 2) In this example, based on (Example 1), BJb gas (or P
When dark conductivity and photoconductivity were measured by introducing H3 gas), the results shown in FIG. 27 were obtained.
図中、横軸は5in4とC2)1.の合計流量に対する
BzHb純量(これはH2ガスの希釈比率より換算して
求められるthHbの絶対流量のことである)である。In the figure, the horizontal axis is 5in4 and C2)1. (This is the absolute flow rate of thHb calculated from the dilution ratio of H2 gas.)
尚、BzHhH量をPH3純量に置き換えた場合も参考
例として記載する。Note that a case where the amount of BzHhH is replaced with the pure amount of PH3 is also described as a reference example.
第27図によれば、・印は暗導電率のプロットであり、
O印は光導電率のプロットであり、codはそれぞれの
特性曲線である。According to FIG. 27, the mark is a plot of dark conductivity,
O marks are plots of photoconductivity, and cod are respective characteristic curves.
第27図から明らかな通り、光導電率は暗導電率に比べ
て1000倍以上となり、PやBをドーピングしたa−
3iC層が電子写真感光体用として満足し得る光導電性
をもっている。As is clear from Fig. 27, the photoconductivity is more than 1000 times that of the dark conductivity, and the a-
The 3iC layer has satisfactory photoconductivity for use in electrophotographic photoreceptors.
(例3)
本例においては、(例2)に基づき下記の通りにガス流
量を設定して得られたa−SiCJiに対して分光感度
特性を測定し、その結果は第28図に示された分光感度
曲線eとなった。尚、この図は基波長において等エネル
ギー光を照射した時の光導電率を示す。(Example 3) In this example, the spectral sensitivity characteristics were measured for a-SiCJi obtained by setting the gas flow rate as shown below based on (Example 2), and the results are shown in Figure 28. The result was a spectral sensitivity curve e. Note that this figure shows the photoconductivity when uniform energy light is irradiated at the fundamental wavelength.
左丞流l
S i H4ガス流量・・・1003cc11CJzガ
ス流量・・・10sccnI
BJ& (38ppm含有)・・・1000scc11
1H2ガス流量・・・・1OO5cc鋼
第28図上第28かな通り、可視光領域に光感度が認め
られ、特に長波長側に増感があり、これによって電子写
真用の光導電体として十分に用いることができる。Left flow I S i H4 gas flow rate...1003cc11CJz gas flow rate...10sccnI BJ& (contains 38ppm)...1000scc11
1H2 gas flow rate...1005cc steel Figure 28 As shown in Figure 28 above, photosensitivity is observed in the visible light region, and there is especially sensitization on the long wavelength side, which makes it sufficient as a photoconductor for electrophotography. Can be used.
(例4)
本例においては、(例3)と同じように製作したa−3
iC層(厚み30μl)に対して表面電位、暗減衰及び
光減衰のそれぞれの特性を測定した。この測定は+5.
6KVのコロナチャージャで正帯電し、暗中での表面電
位の経時変化と、650nmの単色光照射直後の表面電
位の経時変化を追ったものである。(Example 4) In this example, a-3 manufactured in the same way as (Example 3)
The surface potential, dark decay, and light decay characteristics of the iC layer (thickness: 30 μl) were measured. This measurement is +5.
The surface potential was positively charged with a 6KV corona charger, and the change in surface potential over time in the dark and the change in surface potential over time immediately after irradiation with 650 nm monochromatic light were tracked.
その結果は第29図に示す通りであり、f、gはそれぞ
れ暗減衰曲線及び光減衰曲線である。The results are shown in FIG. 29, where f and g are the dark decay curve and the light decay curve, respectively.
第29図より明らかな通り、表面電位が約+600Vと
大きくなっており、暗減衰も5秒後で25χ程度であり
、電荷保持能力に優れている。また、光導電率にも優れ
ており、残留電位も小さいと言える。As is clear from FIG. 29, the surface potential is as large as about +600V, and the dark decay is about 25χ after 5 seconds, indicating excellent charge retention ability. It can also be said that it has excellent photoconductivity and low residual potential.
尚、(例4)にて得られたa−5iC層を−5,6KV
おコロナチャージャで負帯電させたところ、表面電位が
数十Vであった。In addition, the a-5iC layer obtained in (Example 4) was heated to -5.6 KV.
When negatively charged with a corona charger, the surface potential was several tens of volts.
そして、この(例4)に基づいて製作されたa−5iC
li感光体を、+ 5.6KVのコロナチャージャによ
って正極性に帯電させ、次いで画像露光して磁気ブラシ
現象を行った結果、画像濃度が高く、高コントラストで
良質な画像が得られ、20万回の繰り返しテスト後にお
いても初期画像の劣化が見られず、耐久性も良好である
ことが確認できた。And a-5iC manufactured based on this (Example 4)
The Li photoreceptor was positively charged with a +5.6KV corona charger, and then imagewise exposed to perform the magnetic brush phenomenon. As a result, a high-quality image with high image density and contrast was obtained, and it was used 200,000 times. Even after repeated tests, no deterioration of the initial image was observed, and it was confirmed that the durability was good.
(例5) 本例においては第1の態様の感光体を製作した。(Example 5) In this example, a photoreceptor of the first embodiment was manufactured.
部ち、基板用アルミニウム製ドラムを第25図に示した
容量結合型グロー放電分解装置の反応管(33)内に設
置し、そして、第1タンク(11)より5i)I。First, the aluminum drum for the substrate was installed in the reaction tube (33) of the capacitively coupled glow discharge decomposition apparatus shown in FIG.
ガスを、第2タンク(12)よりCJzガスを、第3タ
ンク、第4タンク(13) (14)より8.)1.ガ
スを、第5タンク(15)よりH2ガスを、第6タンク
(16)よりNOガスをそれぞれ放出し、第1表に示す
製造条件で第1の層領域及び第2のFill域を形成し
た。Gas, CJz gas from the second tank (12), third tank, fourth tank (13) (14) 8. )1. Gas was released from the fifth tank (15) and NO gas from the sixth tank (16), respectively, and the first layer region and the second fill region were formed under the manufacturing conditions shown in Table 1. .
かくして得られた感光体の電子写真特性は、暗中で+5
.6KVの高圧源に接続されたコロナチャージャで正極
性に帯電させ、次いで分光された単色光(650nm)
を感光体表面に照射し、これによって下記の通りの特性
が得られた。尚、残留電位は露光開始の5秒後の値であ
る。The electrophotographic properties of the photoreceptor thus obtained were +5 in the dark.
.. Positively charged with a corona charger connected to a 6KV high voltage source, and then split into monochromatic light (650nm)
was irradiated onto the surface of the photoreceptor, and the following characteristics were obtained. Note that the residual potential is the value 5 seconds after the start of exposure.
表面電位・・・+700■
光怒度・・・0.380m2erg−1残留電位・・・
25V
(例6)
本例においては第2の態様の感光体を第2表に示す条件
で製作し、これによって下記の電子写真特性が得られた
。Surface potential...+700■ Light anger...0.380m2erg-1 Residual potential...
25V (Example 6) In this example, a photoreceptor of the second embodiment was manufactured under the conditions shown in Table 2, and the following electrophotographic characteristics were obtained.
表面電位・・・+760v
光怒度・・・0.40cm”erg−’残留電位・・・
30V
(例7)
本例においては第3の態様の感光体を第3表に示す条件
で製作し、これによって下記の電子写真特性が得られた
。Surface potential...+760v Light intensity...0.40cm"erg-'Residual potential...
30V (Example 7) In this example, a photoreceptor of the third embodiment was manufactured under the conditions shown in Table 3, and the following electrophotographic characteristics were obtained.
表面電位・・・+820■
光怒度・・・0.42cm”erg−’残留電位・・・
35V
また、この感光体の表面電位、暗減衰及び光減衰のそれ
ぞれの特性を(例4)と同様に測定したところ、第30
図に示す通りの結果が得られた。図中、h、iはそれぞ
れ暗減衰曲線及び光減衰曲線である。Surface potential...+820■ Light anger intensity...0.42cm"erg-'Residual potential...
35V In addition, when the surface potential, dark decay, and light decay characteristics of this photoreceptor were measured in the same manner as in (Example 4), the 30th
The results shown in the figure were obtained. In the figure, h and i are a dark decay curve and a light decay curve, respectively.
第30図より明らかな通り、表面電位が約+820vと
著しく大きくなっており、暗減衰も5秒後で8χ程度で
あって電荷保持能力に優れている。As is clear from FIG. 30, the surface potential is significantly large, approximately +820 V, and the dark decay is approximately 8χ after 5 seconds, indicating excellent charge retention ability.
(例8)
本例においては第4の態様の感光体を第4表に示す条件
で製作し、これによって下記の電子写真特性が得られた
。(Example 8) In this example, a photoreceptor of the fourth embodiment was manufactured under the conditions shown in Table 4, and the following electrophotographic characteristics were obtained.
表面電位・・・+〇70V
光感度・・・0.42CII12erg−1残留電位・
・・45V
(例9 )
本例においては、第25図に示したグロー放電分解装置
を用いて下記の製造条件によって成膜速度を測定したと
ころ、第31図に示す通りの結果が得られた。Surface potential...+〇70V Photosensitivity...0.42CII12erg-1 Residual potential・
...45V (Example 9) In this example, the film formation rate was measured under the following manufacturing conditions using the glow discharge decomposition apparatus shown in Fig. 25, and the results shown in Fig. 31 were obtained. .
堰1Uk住
RF電力・・・150W
ガス圧力・・・0.45Torr
基板温度・・・300℃
SiH,ガス流量・・・1OO3ccIH2ガス流量・
・・300sccII+第31図中O印は測定結果のプ
ロットであり、jはその特性曲線である。Weir 1Uk housing RF power...150W Gas pressure...0.45Torr Substrate temperature...300℃ SiH, gas flow rate...1OO3ccIH2 gas flow rate
...300sccII+ In Fig. 31, the O mark is a plot of the measurement results, and j is its characteristic curve.
第31図より明らかな通り、C,H,ガスの含有比率が
大きくなるのに伴って成膜速度が太き(なっており、約
5〜13μm1時の成膜速度となった。As is clear from FIG. 31, as the content ratio of C, H, and gas increases, the film forming rate becomes thicker, reaching a film forming rate of about 5 to 13 μm at 1 hour.
(例10)
本例においては、(例9 )と同一の製造条件によって
C,U、ガスの含有比率を変えながら膜中の水素含有量
を追ったところ、第32図に示す通りの結果が得られた
。(Example 10) In this example, we tracked the hydrogen content in the film while changing the content ratios of C, U, and gas under the same manufacturing conditions as in (Example 9), and the results shown in Figure 32 were obtained. Obtained.
第32図中、○印及び・印はそれぞれC及びSiと結合
したHの結合量を示すプロットであり、k、lはそれぞ
れその特性曲線である。In FIG. 32, the marks ◯ and * are plots showing the amount of H bonded to C and Si, respectively, and k and l are their characteristic curves, respectively.
第32図より明らかな通り、Ct II 2ガスの含有
比率が大きくなるのに伴ってC−H結合が増大すると共
にS−H結合が減少することが判る。As is clear from FIG. 32, as the content ratio of Ct II 2 gas increases, the number of C--H bonds increases and the number of S--H bonds decreases.
以上の通り、本発明の電子写真感光体によれば、全層に
亘って光導電性を有するa−SiCが高い暗抵抗値とな
り、且つ光感度特性にも優れていることによって実質上
表面保護層及びキャリア注入阻止層を不要とすることが
でき、その結果、光導電性a−SiC層だけから成る電
子写真感光体が提供できた。As described above, according to the electrophotographic photoreceptor of the present invention, the a-SiC having photoconductivity throughout the entire layer has a high dark resistance value and also has excellent photosensitivity characteristics, so that the surface is substantially protected. As a result, an electrophotographic photoreceptor consisting only of a photoconductive a-SiC layer could be provided.
更に本発明の電子写真感光体によれば、層厚方向に亘っ
て炭素及びma族元素の含有量を変えることによって表
面電位を向上させると共に光感度特性を高め、且つ残留
電位を顕著に小さくすることができる。特に、炭素の含
有量を層厚方向にルって変えると、抵抗率が制御されて
所要の層領域が得られ、その結果、格段に高性能な電子
写真感光体が提供できる。Further, according to the electrophotographic photoreceptor of the present invention, by changing the content of carbon and MA group elements in the layer thickness direction, the surface potential is improved, the photosensitivity characteristics are enhanced, and the residual potential is significantly reduced. be able to. In particular, by changing the carbon content in the layer thickness direction, the resistivity can be controlled and a desired layer area can be obtained, and as a result, an electrophotographic photoreceptor with significantly higher performance can be provided.
また、本発明によれば、正極性に有利に帯電することが
できる正極性用電子写真感光体が提供される。Further, according to the present invention, there is provided an electrophotographic photoreceptor for positive polarity that can be charged advantageously to positive polarity.
更に、従来のa−Si感光体を長期間に亘って使用した
場合にはコロナ放電に伴って感光体表面の局所的な放電
破壊が発生し易くなり、これに起因して画像に汎点が生
じるという問題があったが、本発明によれば、a−Si
の誘電率がε=12であるのに対してa−SiCはε=
7と約半分程度であるために帯電能に優れており、これ
により、表面電位を高くしても何ら上記の放電破壊が発
生しなくなり、その結果、高品質且つ高信頌性の電子写
真感光体が提供される。Furthermore, when a conventional a-Si photoreceptor is used for a long period of time, local discharge damage on the photoreceptor surface is likely to occur due to corona discharge, and this causes general dots in the image. However, according to the present invention, a-Si
The dielectric constant of a-SiC is ε=12, while that of a-SiC is ε=12.
7, it has excellent charging ability, and as a result, even if the surface potential is raised, the above-mentioned discharge breakdown will not occur.As a result, high quality and reliable electrophotographic photosensitive materials can be produced. The body is provided.
ま赳、本発明の電子写真感光体によれば、それ自体で帯
電能及び耐環境性に優れていることから、特に保護層を
設ける必要がなく、例えばコロナ放電による被曝或いは
現像剤の樹脂成分の感光体表面へのフィルミング等によ
って表面が劣化した場合、その劣化した表面を研摩剤等
で研摩再生を操り返し行ってもその研摩量において制限
を受けずに感光体の初期特性を維持することができ、そ
れによって初期における良好な画像を長期に亘り安定し
て供給することが可能となる。Furthermore, since the electrophotographic photoreceptor of the present invention has excellent charging ability and environmental resistance by itself, there is no need to provide a protective layer, and it is not necessary to provide a protective layer, for example, due to exposure to corona discharge or resin components of the developer. When the surface of a photoreceptor is deteriorated due to filming, etc., the initial characteristics of the photoreceptor can be maintained without being limited in the amount of polishing even if the deteriorated surface is re-polished with an abrasive or the like. This makes it possible to stably supply a good initial image over a long period of time.
更に本発明の電子写真感光体を、従来のa−Si感光体
と比較して場合、このa−Si感光体の問題点として耐
湿性に劣っているので画像流れが生じ易く、また、帯電
能に劣っているのでゴースト現象が発生するが、これを
解決するためにa−Si感光体の使用時にヒータを用い
てその感光体を加熱し、その発生を防止している。これ
に対して本発明の電子写真感光体は耐湿性且つ帯電能に
優れているために上記のようにヒータを用いて使用する
必要はないという長所がある。Furthermore, when the electrophotographic photoreceptor of the present invention is compared with a conventional a-Si photoreceptor, problems with the a-Si photoreceptor include poor moisture resistance, which tends to cause image deletion, and chargeability. However, in order to solve this problem, a heater is used to heat the a-Si photoreceptor when the a-Si photoreceptor is used, thereby preventing the ghost phenomenon from occurring. On the other hand, the electrophotographic photoreceptor of the present invention has an advantage in that it does not need to be used with a heater as described above because it has excellent moisture resistance and charging ability.
また、本発明の電子写真感光体はa−Si感光体と比べ
て炭素の含有量を変えるだけで幅広い分光感度特性(ピ
ーク600〜700n曽)が得られると共に光感度自体
を増大させることができ、更に必要に応じて不純物元素
をドーピングすれば長波長側の増感も可能になるという
利点がある。Furthermore, compared to the a-Si photoreceptor, the electrophotographic photoreceptor of the present invention can obtain a wide range of spectral sensitivity characteristics (peak 600 to 700n) and can increase the photosensitivity itself by simply changing the carbon content. Furthermore, there is an advantage that sensitization on the long wavelength side can be achieved by doping with an impurity element as necessary.
第1図は本発明の電子写真感光体の層構成を示す説明図
、第2図は従来の電子写真感光体の層構造を示す説明図
、第3図は本発明に係る第1の態様の感光体の層領域を
示す説明図、第4図、第5図、第6図、第7図、第8図
及び第9図はそれぞれ本発明に係る第1の態様の感光体
の炭素含有量を示す説明図、第10図は本発明に係る第
2の態様の感光体の層領域を示す説明図、第11図、第
12図、第13図、第14図、第15図及び第16図は
それぞれ本発明に係る第2の態様の感光体の炭素含有量
を示す説明図、第17図は本発明に係る第3の態様の感
光体の層領域を示す説明図、第18図、第19図、第2
0図及び第21図はそれぞれ本発明に係る第3の態様の
感光体の炭素含有量を示す説明図、第22図は本発明に
係る第4の態様の感光体の層領域を示す説明図、第23
図及び第24図は本発明に係る第4の態様の感光体の炭
素含有量を示す説明図、第25図は本発明の実施例に用
いられる容量結合型グロー放電分解装置の説明図、第2
6図はCJzガスの流量比率に対する導電率を示す線図
、第27図はPR,ガス及びBtHhガスのそれぞれの
流量比率に対する導電率を示す線図、第28図はアモル
ファスシリコンカーバイド層の分光感度特性を示す線図
、第29図はアモルファスシリコンカーバイド層の暗減
衰及び光減衰を示す線図、第30図は第3の態様のアモ
ルファスシリコンカーバイド層の暗減衰及び光減衰を示
す線図、第31図はC,H,ガスの流量比率に対する成
膜速度を示す線図、第32図はC,H,ガスの流量比率
に対する水素原子の結合比率を示す線図である。
l・・・基板
5.5a、5b、5c・・・・光導電性アモルファスシ
リコンカーバイド層
6・・・第1の層領域
7・・・第2の層領域
8・・・第3の層領域
9・・・第4の層領域
10・・・アモルファスシリコンカーバイド表面保護層
特許出願人 (663)京セラ株式会社同 河村
孝夫FIG. 1 is an explanatory diagram showing the layer structure of the electrophotographic photoreceptor of the present invention, FIG. 2 is an explanatory diagram showing the layer structure of a conventional electrophotographic photoreceptor, and FIG. Explanatory diagrams showing the layer regions of the photoreceptor, FIG. 4, FIG. 5, FIG. 6, FIG. 7, FIG. 8, and FIG. 9 respectively show the carbon content of the photoreceptor of the first embodiment according to the present invention. FIG. 10 is an explanatory diagram showing layer regions of a photoreceptor according to the second embodiment of the present invention, FIGS. 11, 12, 13, 14, 15, and 16. The figures are an explanatory diagram showing the carbon content of the photoconductor of the second embodiment according to the present invention, FIG. 17 is an explanatory diagram showing the layer region of the photoconductor of the third embodiment according to the present invention, and FIG. Figure 19, 2nd
FIG. 0 and FIG. 21 are explanatory views showing the carbon content of the photoreceptor of the third embodiment of the present invention, respectively, and FIG. 22 is an explanatory view showing the layer regions of the photoreceptor of the fourth embodiment of the invention. , 23rd
24 and 24 are explanatory diagrams showing the carbon content of the photoreceptor of the fourth embodiment of the present invention, and FIG. 2
Figure 6 is a diagram showing the conductivity versus the flow rate ratio of CJz gas, Figure 27 is a diagram showing the conductivity versus the flow rate ratio of PR, gas, and BtHh gas, and Figure 28 is the spectral sensitivity of the amorphous silicon carbide layer. 29 is a diagram showing the dark attenuation and optical attenuation of the amorphous silicon carbide layer; FIG. 30 is a diagram showing the dark attenuation and optical attenuation of the amorphous silicon carbide layer of the third embodiment; FIG. FIG. 31 is a diagram showing the film forming rate with respect to the flow rate ratio of C, H, and gases, and FIG. 32 is a diagram showing the bonding ratio of hydrogen atoms with respect to the flow rate ratio of C, H, and gases. l...Substrate 5.5a, 5b, 5c...Photoconductive amorphous silicon carbide layer 6...First layer region 7...Second layer region 8...Third layer region 9...Fourth layer region 10...Amorphous silicon carbide surface protective layer Patent applicant (663) Kyocera Corporation Takao Kawamura
Claims (2)
ド層を形成した電子写真感光体であって、前記アモルフ
ァスシリコンカーバイド層は少なくとも第1の層領域、
第2の層領域及び第3の層領域を具備し、第1の層領域
は第2の層領域より、第2の層領域は第3の層領域より
それぞれ基板側に配置され、且つ第3の層領域は第2の
層領域に比べて炭素が多く含まれていると共に第2の層
領域は0.1乃至10000ppmの周期律表第IIIa
族元素が含まれており、更に第1の層領域は第2の層領
域よりも周期律表第IIIa族元素が多く含まれているこ
とを特徴とする正極性に帯電可能な電子写真感光体。(1) An electrophotographic photoreceptor in which a photoconductive amorphous silicon carbide layer is formed on a substrate, the amorphous silicon carbide layer forming at least a first layer region;
a second layer region and a third layer region, the first layer region is located closer to the substrate than the second layer region, the second layer region is located closer to the substrate than the third layer region, and the third layer region is located closer to the substrate than the second layer region; The layer region contains more carbon than the second layer region, and the second layer region contains 0.1 to 10,000 ppm of carbon in the periodic table IIIa.
An electrophotographic photoreceptor capable of being positively charged, characterized in that the first layer region contains a group IIIa element of the periodic table in a larger amount than the second layer region. .
ド層及びアモルファスシリコンカーバイド表面保護層を
順次形成した電子写真感光体であって、前記光導電性ア
モルファスシリコンカーバイド層は少なくとも第1の層
領域、第2の層領域及び第3の層領域を具備し、第1の
層領域は第2の層領域より基板側に、、第2の層領域は
第3の層領域より基板側にそれぞれ配置され、且つ第3
の層領域は第2の層領域に比べて炭素が多く含まれてい
ると共に第2の層領域は0.1乃至10000ppmの
周期律表第IIIa族元素が含まれており、更に第1の層
領域は第2の層領域よりも周期律表第IIIa族元素が多
く含まれていることを特徴とする正極性に帯電可能な電
子写真感光体。(2) An electrophotographic photoreceptor in which a photoconductive amorphous silicon carbide layer and an amorphous silicon carbide surface protection layer are sequentially formed on a substrate, wherein the photoconductive amorphous silicon carbide layer is formed in at least a first layer region, a second layer region, and a second layer region. and a third layer region, the first layer region is arranged closer to the substrate than the second layer region, and the second layer region is arranged closer to the substrate than the third layer region, and Third
The layer region contains more carbon than the second layer region, and the second layer region also contains 0.1 to 10,000 ppm of Group IIIa elements of the periodic table, and the first layer region contains more carbon than the second layer region. An electrophotographic photoreceptor capable of being positively charged, wherein the region contains a larger amount of Group IIIa elements of the periodic table than the second layer region.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22895186A JPS6382416A (en) | 1986-09-27 | 1986-09-27 | Electrophotographic sensitive body |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22895186A JPS6382416A (en) | 1986-09-27 | 1986-09-27 | Electrophotographic sensitive body |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6382416A true JPS6382416A (en) | 1988-04-13 |
Family
ID=16884413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22895186A Pending JPS6382416A (en) | 1986-09-27 | 1986-09-27 | Electrophotographic sensitive body |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6382416A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5792229A (en) * | 1994-07-07 | 1998-08-11 | Nippondenso Co., Ltd. | Filter and filtering apparatus |
-
1986
- 1986-09-27 JP JP22895186A patent/JPS6382416A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5792229A (en) * | 1994-07-07 | 1998-08-11 | Nippondenso Co., Ltd. | Filter and filtering apparatus |
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