JPS637638A - Manufacture of resin sealed semiconductor - Google Patents
Manufacture of resin sealed semiconductorInfo
- Publication number
- JPS637638A JPS637638A JP15196586A JP15196586A JPS637638A JP S637638 A JPS637638 A JP S637638A JP 15196586 A JP15196586 A JP 15196586A JP 15196586 A JP15196586 A JP 15196586A JP S637638 A JPS637638 A JP S637638A
- Authority
- JP
- Japan
- Prior art keywords
- pot
- resin
- tablet
- heated
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920005989 resin Polymers 0.000 title claims abstract description 40
- 239000011347 resin Substances 0.000 title claims abstract description 40
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000000465 moulding Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 9
- 238000003825 pressing Methods 0.000 claims 1
- 238000012805 post-processing Methods 0.000 abstract description 3
- 238000001721 transfer moulding Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/17—Component parts, details or accessories; Auxiliary operations
- B29C45/26—Moulds
- B29C45/34—Moulds having venting means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/02—Transfer moulding, i.e. transferring the required volume of moulding material by a plunger from a "shot" cavity into a mould cavity
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Injection Moulding Of Plastics Or The Like (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は半導体集積回路（以下ＩＣと示す。）を外的
環境から保護するためにトランスファ成形法を用いて全
体を樹脂で封止する樹脂封止形半導体の製造方法に関す
るものである。[Detailed Description of the Invention] [Field of Industrial Application] This invention relates to a resin for sealing the entire semiconductor integrated circuit (hereinafter referred to as IC) with resin using a transfer molding method in order to protect it from the external environment. The present invention relates to a method for manufacturing a sealed semiconductor.
第３図及び第４図は各々例えば特開昭５８−８８９４０
に関連した従来の半導体封止用トランスファ成形の金型
を示す断面図であり、図において１１１は油圧プレス（
図示せず）Ｋ取り付けられ、１８０℃に加熱できる２分
割金型の上型、＋２１ｔ−ｊ同様の下型、（３１はボッ
） ＋４１内の成形樹脂（７）とキャビティ（６）マで
圧送するピストンであり、キャピテイ（５）は複数の工
Ｃの外形を形成るように金型内に複数設けられている。Figures 3 and 4 are each published in Japanese Patent Application Laid-Open No. 58-88940.
111 is a cross-sectional view showing a conventional transfer molding mold for semiconductor encapsulation related to the hydraulic press (
(not shown) Upper mold of a two-part mold that can be heated to 180℃ with K attached, lower mold similar to +21t-j, (31 is blank) Molding resin (7) in +41 and cavity (6) are pumped by ma A plurality of cavities (5) are provided in the mold so as to form the outer shapes of a plurality of cavities C.
（６）はピストン（３）の助力源となる油圧シリンダ、
（８）は成形樹脂（７）ヲキャピテイ１６）まで送るラ
ンナー、（９）は排気口１．１０１は真空ポンプ、（（
１）はボット１４）及びキャピテイ（６）全真空に保持
する型パラ千ン、（１２）は同様なピストンシール、で
ある。な２成形樹脂（力はエポキシ８１脂粉末を円筒状
に圧縮成形した軟化点が８０〜１００′Ｃのタブレット
である。(6) is a hydraulic cylinder that serves as a source of support for the piston (3);
(8) is the runner that feeds the molded resin (7) to the capacity 16), (9) is the exhaust port 1.101 is the vacuum pump, ((
1) is a mold parapet that maintains the bot 14) and the cavity (6) at full vacuum, and (12) is a similar piston seal. It is a tablet with a softening point of 80 to 100'C, which is made by compression molding epoxy 81 resin powder into a cylindrical shape.
次に従来の樹脂封止形半導体の製造方法であるトランス
ファ成形法について、第８図ともとに説明する。Next, a transfer molding method, which is a conventional method for manufacturing a resin-sealed semiconductor, will be explained with reference to FIG.
まず上型…と下型（２１を油圧プレスに取付け、１７０
℃〜１８０℃に加熱する。型開状態で下型（２）に複数
のＩＣを配置し、あらかじめ８０〜１００℃に加熱した
タブレット（７）をポット（４）に投入後、金型を締め
る。First, attach the upper mold... and the lower mold (21) to the hydraulic press, and
Heat to 180°C. With the mold open, a plurality of ICs are placed in the lower mold (2), and the tablet (7), which has been preheated to 80 to 100°C, is put into the pot (4), and then the mold is tightened.
真空ポンプ＋１０１ ’ｉ作動し、ポット（４１の空気
をランナー（８）及び排気口（９）を通って外に排気す
る。ポット（４）の内部が真空になると、ピストン（３
１を押し上げてタブレット１７＋ １！！−圧縮する。The vacuum pump +101'i operates and exhausts the air in the pot (41) to the outside through the runner (8) and the exhaust port (9). When the inside of the pot (4) becomes vacuum, the piston (3
Push up 1 and tablet 17+ 1! ! - Compress.
タブレット（７１は金型の熱を受けとり、さらに粘度が
低くなることから、ランナー（８）を通り、各キャビテ
ィ（５）に圧送され、工Ｃの全体を包み込む。The tablet (71) receives the heat from the mold and further lowers its viscosity, so it passes through the runner (8), is pumped into each cavity (5), and envelops the entire workpiece C.
樹脂は２〜３分で硬化するため、金型を開き成形物を取
出した後、必要な後加工を行なＩ／′１製品が完成する
。Since the resin hardens in 2 to 3 minutes, after opening the mold and removing the molded product, necessary post-processing is performed to complete the I/'1 product.
従来の樹脂封止形半導体の製造方法は上記のように行な
われるが、樹脂の使用効率を上げるためにはポット（４
）の内径が大きすぎては具合が悪いので通常のタブレッ
ト（７）の外径に近い状態（北率約１）にされている。The conventional manufacturing method for resin-sealed semiconductors is carried out as described above, but in order to increase the efficiency of resin use, a pot (4
) If the inner diameter of the tablet (7) is too large, it will not be good, so the outer diameter of the tablet (7) is made close to that of a normal tablet (7) (north ratio of about 1).
このためポット内を真空にする際、ポット内のタブレッ
ト（７）はその内部にある空気が外へ放射状に膨脹して
、タブレット（））がポット（４１の壁面、即ち下型（
２）に密着する。この状態でさらにポット１４）を真空
にすると、タブレット（７）は下型（２１及びピストン
（３）と接続している箇所の空気の逃げ場所がなくなり
、第４図のようにタブレット（７１全体が上型（１１の
上部に持ち上がり、ランナー（８）に流れ込む。ランナ
ー（８）が塞がれる）“その後のポット内空気あるいけ
タブレット（７）に含まれる空気は排気されず真空ポン
プ（１０）の真空度が高真空を示しても実際には内部は
十分真空になっていない状態で、ピストン（３１ヲ押し
上げてキャピテイ（３）に樹脂を流すことになる。Therefore, when creating a vacuum inside the pot, the air inside the tablet (7) inside the pot expands radially outward, causing the tablet ()) to move towards the wall surface of the pot (41, i.e., the lower mold (
Closely adhere to 2). In this state, when the pot 14) is further evacuated, the tablet (7) has no place for air to escape from the part where it connects with the lower mold (21 and the piston (3)), and as shown in Figure 4, the entire tablet (71) is lifted to the top of the upper mold (11) and flows into the runner (8).The runner (8) is blocked). Even if the degree of vacuum in the piston (31) indicates a high vacuum, the interior is not actually sufficiently vacuumed, and the piston (31) is pushed up to flow the resin into the capacitance (3).
従って成形したＩＣの中に多量の空気が混入し、ＩＣの
信頓性が低下する等の問題点があった。Therefore, there were problems such as a large amount of air being mixed into the molded IC, reducing the reliability of the IC.
この発明は上記のような問題点を解決するためになされ
たもので、ポット内を十分真空にし、成形する前のタブ
レット内の空気もできるだけ除去してＩＣの成形物中に
空気の混入を防止し、信・印性の高い窩脂封止ｆＵ半導
体を製造する方法を提供することを目的とする。This invention was made to solve the above-mentioned problems, and it prevents air from entering the IC molded product by creating a sufficient vacuum inside the pot and removing as much air as possible inside the tablet before molding. It is an object of the present invention to provide a method for manufacturing a resin-sealed FU semiconductor with high reliability and reliability.
この発明に係る樹脂封止形半導体の製造方法は、ポット
の内径を、加熱された成形樹脂が真空で膨脹する最大外
径より大きくし、ポット内に成形樹脂を配してポット内
？真空排気した後、ＩＣの外形を形成するようにするも
のである。The method for manufacturing a resin-sealed semiconductor according to the present invention includes making the inner diameter of the pot larger than the maximum outer diameter at which the heated molding resin expands in vacuum, disposing the molding resin inside the pot, and disposing the molded resin inside the pot. After evacuation, the outer shape of the IC is formed.
この発明における樹脂封止形半導体の製造方法は真空下
で成形樹脂が膨脹する最大径より大きな内径のポットに
成形樹脂を入れるので、ポット及び成形樹脂内の空気が
十分に排気できる。In the method for manufacturing a resin-sealed semiconductor according to the present invention, the molded resin is placed in a pot having an inner diameter larger than the maximum diameter at which the molded resin expands under vacuum, so that the air in the pot and the molded resin can be sufficiently exhausted.
以下、この発明の実施例を図について説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図及び第２図は各々この発明の一実施例による樹脂
封止形半導体の製造方法？工程順て示す金型の断面図で
あり、図において、（４）は成形樹脂（７）が真空で膨
脹する最大外積よシ大きな内径を有するポットで、この
場合、成形樹脂（７）の外径の１．１７倍の内径を有し
、容積が成形樹脂＋７１の体積の１．５倍以上ある直径
３５顛、高さ５０欄のポットである。なお成形樹脂（７
）はエポキシ樹脂等の粉末を圧縮したタブレットで、軟
化点が８０℃〜１００℃、直径が３０Ｉｌｆ１１％高さ
が４０餌のものである。破線１１はポットｎｌ ｆ真空
にした時、Ｑ脹するタブレット（７）の最大寸法を表わ
したものである。Ｑ３１ｄボット１４）内をに空にした
り、成形樹脂（７１が排気口（９）へ流れないようにす
る排気弁、Ｕ４は排気弁＋１０１を開閉する動力全発生
するエアシリンダ、ａ［ｉｌハポット及びキャピテイ内
を真空に保持する軸シール、！Ｊ・も同様な弁シールで
ある。1 and 2 each show a method of manufacturing a resin-sealed semiconductor according to an embodiment of the present invention. These are cross-sectional views of the mold shown in the order of the steps. In the figure, (4) is a pot having an inner diameter larger than the maximum outer volume of the molding resin (7) that expands in vacuum; in this case, the outer volume of the molding resin (7) This pot has an inner diameter 1.17 times the diameter, a volume more than 1.5 times the volume of the molding resin +71, a diameter of 35 squares, and a height of 50 squares. In addition, molding resin (7
) is a tablet made of compressed powder of epoxy resin, etc., and has a softening point of 80°C to 100°C, a diameter of 30°C, 11%, and a height of 40°C. The broken line 11 represents the maximum dimension of the tablet (7) that expands when the pot is evacuated. U4 is an air cylinder that generates all the power to open and close the exhaust valve +101, and U4 is an air cylinder that generates all the power to open and close the exhaust valve +101. The shaft seal that maintains a vacuum inside the chamber, !J, is also a similar valve seal.
次にこの発明の方法について説明する。Next, the method of this invention will be explained.
まず、油圧プレスに取付けられ１８０’ＣＫ加熱された
上型１１１と下型（２）を開き、下型（２）に工Ｃを配
置する。ピストン（３１と下げ、ポット１４）内にプリ
ヒータで８０℃〜１００℃に加熱したタブレット（７）
を入れ、直ちに上型…と下型（２１を型締めする。First, the upper mold 111 and the lower mold (2), which are attached to a hydraulic press and heated by 180'CK, are opened, and the workpiece C is placed on the lower mold (2). Tablet (7) heated to 80°C to 100°C with a preheater inside the piston (31 and lower, pot 14)
Immediately close the upper mold and lower mold (21).
＠１図に示すように、真空ポンプを回し、排気弁ａ３１
を下に移動して上型１１１と排気弁Ｃ１ｌとの間に間隙
を設け、ポット（４）内の空気を排気口（９）ヲ通じて
排気し、ポット（４１及びキャビティ（６）内を真空に
する。（例えば８ Ｔｏｒｒ、）
０ようにすると、タブレット（７）はその内部に含まれ
る空気が膨脹するため、放射状に外部へ膨脹し、第１図
破線四に示すような膨脹タブレットになる。この時、タ
ブレット（））はその内部に含まれる空気が樹脂の表面
張力よりも大きく膨脹するだけの窒間が直径方向にある
ことから従来のように金型壁面と密着することなく、あ
る程度膨脹すると気泡が破壊して内部の空気はほとんど
除去される。@1 As shown in the figure, turn the vacuum pump and open the exhaust valve a31.
is moved downward to create a gap between the upper mold 111 and the exhaust valve C1l, and the air inside the pot (4) is exhausted through the exhaust port (9), and the inside of the pot (41 and cavity (6) is Create a vacuum (e.g. 8 Torr) When the pressure is set to 0, the air contained inside the tablet (7) expands, so it expands radially outward and becomes an expanded tablet as shown in broken line 4 in Figure 1. At this time, the tablet ()) does not come into close contact with the mold wall like in the past because there is a gap in the diameter direction that allows the air contained inside to expand to a greater extent than the surface tension of the resin. When it expands to a certain extent, the bubbles collapse and most of the air inside is removed.
次に排気弁（１３）’に閉じ、ピストン（３１ヲ上に押
し上げ、第２図のように、キャピテイｌｌ５Ｉに樹脂を
圧送する。樹脂は２〜３分で硬化するため金型全開いて
成形物と取り出し、必要な後加工を行なって製品完成と
なる。Next, close the exhaust valve (13)' and push up the piston (31) to pump the resin into the cavity 15I as shown in Figure 2.The resin hardens in 2 to 3 minutes, so the mold is fully opened and the molded product is The product is then taken out and subjected to any necessary post-processing to complete the product.
なお、上記実施例ではタブレットの外径が３０間、ポッ
トの内径が３５ａｌとしてその比がｌ対１５１７とした
が、これは樹脂の効率をできるだけ上げ、無駄になる樹
脂を減らし、かつポット内及び樹脂内の空気を充分に排
気できるようにした値である。In the above example, the outer diameter of the tablet was 30mm, the inner diameter of the pot was 35al, and the ratio was 1:1517. This value allows the air inside the resin to be sufficiently exhausted.
樹脂の効率を多少下げるならば、上記比率は、この１直
に限定されるものではな（，１，１７以上でもよく、要
は真空にした時、タブレットが直径方向に膨脹する最大
径より、ポット径が大きければよい。If the efficiency of the resin is to be lowered to some extent, the above ratio is not limited to this one (1, 17 or more is also possible; in short, the ratio is smaller than the maximum diameter at which the tablet expands in the diametrical direction when vacuum is applied). The larger the pot diameter, the better.
また、ＩＣの成形物中に空気が混入するのを防止するた
めに、上記実施ＩＭＪではポット（４）とキャピテイ１
１の両方を真空にする機構としたが、必らずしもこれに
限定されるものでなく、ポットだけを真空にしても十分
その効果が得られる。In addition, in order to prevent air from entering the IC molded product, the pot (4) and the cavity 1 are
Although both pots 1 and 1 are evacuated, the mechanism is not limited to this, and the effect can be sufficiently obtained even if only the pot is evacuated.
以上のように、この発明によれば、加熱された成形樹脂
が真空で膨脹する最大外径より大きな内径を有するポッ
ト内に、成形樹脂を配し、ポット内を真空排気して加熱
された成形樹脂より発生する気体を排気するようにした
ので、ポット内及び樹脂を十分脱気でき、内部に気泡の
ない信・項性に優れた半導体を製造することができる効
果がある。As described above, according to the present invention, the molded resin is placed in a pot having an inner diameter larger than the maximum outer diameter at which the heated molded resin expands in vacuum, and the molded resin is heated by evacuating the inside of the pot. Since the gas generated from the resin is exhausted, the inside of the pot and the resin can be sufficiently degassed, and a semiconductor with excellent reliability and quality without bubbles inside can be manufactured.
第１図及び第２図は各々この発明の一実施例による樹脂
封止形半導体の製造方法を工程順に示す金型の断面図、
並びに第３図及び第４図は各々従来の樹脂封止形半導体
の製造方法を示す金型の断面図である。
＋Ｉ＋−−−上型、！２１−−−下型、１３１−−−ピ
ストン、（４１−ｍ−ポット、＋５１−−−キャピテイ
、（〕）−一一一形樹脂、＋９１−−一排気口、ｆｌｏ
ｌ−−一真窒ポンプ。
なお、図中、同一符号は同−又は相当部分を示す。1 and 2 are cross-sectional views of a mold showing a method for manufacturing a resin-sealed semiconductor according to an embodiment of the present invention in the order of steps, respectively;
3 and 4 are cross-sectional views of a mold showing a conventional method for manufacturing a resin-sealed semiconductor. +I+---Upper type,! 21--lower mold, 131--piston, (41-m-pot, +51--capity, ()-111 type resin, +91--1 exhaust port, flo
l--Kazuma Nitrogen Pump. In addition, in the figures, the same reference numerals indicate the same or corresponding parts.
Claims (2)
り大きな内径を有すポット内に、上記成形樹脂を配する
工程、上記ポット内を真空排気すると共に、加熱された
上記成形樹脂から発生する気体を排気する工程、及び上
記ポット内の上記成形樹脂を押圧して半導体集積回路の
配設されたキャビティ内へ圧送し、上記半導体集積回路
の外形を形成する工程を施す樹脂封止形半導体の製造方
法。(1) A step of placing the molded resin in a pot having an inner diameter larger than the maximum outer diameter at which the heated molded resin expands in vacuum, evacuating the inside of the pot, and removing the heated molded resin from the pot. A resin-sealed type that includes a step of exhausting the generated gas, and a step of pressing the molding resin in the pot and feeding it into a cavity in which a semiconductor integrated circuit is arranged to form the outer shape of the semiconductor integrated circuit. Semiconductor manufacturing method.
である特許請求の範囲第１項記載の樹脂封止形半導体の
製造方法。(2) The method for manufacturing a resin-sealed semiconductor according to claim 1, wherein the inner diameter of the pot is 1.17 times or more the outer diameter of the molding resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61151965A JPH0644581B2 (en) | 1986-06-27 | 1986-06-27 | Method for manufacturing resin-sealed semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61151965A JPH0644581B2 (en) | 1986-06-27 | 1986-06-27 | Method for manufacturing resin-sealed semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS637638A true JPS637638A (en) | 1988-01-13 |
| JPH0644581B2 JPH0644581B2 (en) | 1994-06-08 |
Family
ID=15530082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61151965A Expired - Lifetime JPH0644581B2 (en) | 1986-06-27 | 1986-06-27 | Method for manufacturing resin-sealed semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0644581B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03281210A (en) * | 1990-03-29 | 1991-12-11 | Toowa Kk | Resin sealing and molding of electronic part |
| NL9200089A (en) * | 1991-01-17 | 1992-08-17 | Towa Corp | METHOD FOR INCLUDING A SEMICONDUCTOR DEVICE AND DEVICE FOR CARRYING OUT THE PROCESS BY ARTIFICIAL RESIN CASTING |
| US5275546A (en) * | 1991-12-30 | 1994-01-04 | Fierkens Richard H J | Plastic encapsulation apparatus for an integrated circuit lead frame and method therefor |
| US5603879A (en) * | 1993-04-22 | 1997-02-18 | Towa Corporation | Method of molding resin to seal electronic parts using two evacuation steps |
| US5945130A (en) * | 1994-11-15 | 1999-08-31 | Vlt Corporation | Apparatus for circuit encapsulation |
| US6344162B1 (en) * | 1998-07-10 | 2002-02-05 | Apic Yamada Corporation | Method of manufacturing semiconductor devices and resin molding machine |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6064818U (en) * | 1983-10-13 | 1985-05-08 | トーワ株式会社 | Transfer mold mold equipment |
| JPS613416A (en) * | 1984-06-15 | 1986-01-09 | Toshiba Corp | Mold for sealing with transparent resin |
| JPS6185829A (en) * | 1984-10-03 | 1986-05-01 | Michio Osada | Transfer resin molding process of semiconductor element |
| JPS61115342A (en) * | 1984-11-10 | 1986-06-02 | Nitto Electric Ind Co Ltd | Resin tablet for sealing semiconductor |
-
1986
- 1986-06-27 JP JP61151965A patent/JPH0644581B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6064818U (en) * | 1983-10-13 | 1985-05-08 | トーワ株式会社 | Transfer mold mold equipment |
| JPS613416A (en) * | 1984-06-15 | 1986-01-09 | Toshiba Corp | Mold for sealing with transparent resin |
| JPS6185829A (en) * | 1984-10-03 | 1986-05-01 | Michio Osada | Transfer resin molding process of semiconductor element |
| JPS61115342A (en) * | 1984-11-10 | 1986-06-02 | Nitto Electric Ind Co Ltd | Resin tablet for sealing semiconductor |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03281210A (en) * | 1990-03-29 | 1991-12-11 | Toowa Kk | Resin sealing and molding of electronic part |
| NL9200089A (en) * | 1991-01-17 | 1992-08-17 | Towa Corp | METHOD FOR INCLUDING A SEMICONDUCTOR DEVICE AND DEVICE FOR CARRYING OUT THE PROCESS BY ARTIFICIAL RESIN CASTING |
| US5435953A (en) * | 1991-01-17 | 1995-07-25 | Towa Corporation | Method of molding resin for sealing an electronic device |
| US5507633A (en) * | 1991-01-17 | 1996-04-16 | Towa Corporation | Resin molding apparatus for sealing an electronic device |
| US5275546A (en) * | 1991-12-30 | 1994-01-04 | Fierkens Richard H J | Plastic encapsulation apparatus for an integrated circuit lead frame and method therefor |
| US5834035A (en) * | 1993-04-19 | 1998-11-10 | Towa Corporation | Method of and apparatus for molding resin to seal electronic parts |
| US5603879A (en) * | 1993-04-22 | 1997-02-18 | Towa Corporation | Method of molding resin to seal electronic parts using two evacuation steps |
| US5945130A (en) * | 1994-11-15 | 1999-08-31 | Vlt Corporation | Apparatus for circuit encapsulation |
| US6403009B1 (en) | 1994-11-15 | 2002-06-11 | Vlt Corporation | Circuit encapsulation |
| US6710257B2 (en) | 1994-11-15 | 2004-03-23 | Vlt Corporation | Circuit encapsulation |
| US6344162B1 (en) * | 1998-07-10 | 2002-02-05 | Apic Yamada Corporation | Method of manufacturing semiconductor devices and resin molding machine |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0644581B2 (en) | 1994-06-08 |
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