JPS6375783A - Electric field light emitting display panel - Google Patents
Electric field light emitting display panelInfo
- Publication number
- JPS6375783A JPS6375783A JP61219283A JP21928386A JPS6375783A JP S6375783 A JPS6375783 A JP S6375783A JP 61219283 A JP61219283 A JP 61219283A JP 21928386 A JP21928386 A JP 21928386A JP S6375783 A JPS6375783 A JP S6375783A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- melting point
- electrode
- low melting
- display panel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005684 electric field Effects 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims description 33
- 239000011521 glass Substances 0.000 claims description 32
- 230000008018 melting Effects 0.000 claims description 27
- 238000002844 melting Methods 0.000 claims description 27
- 229910000679 solder Inorganic materials 0.000 claims description 25
- 239000011241 protective layer Substances 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 21
- 238000007789 sealing Methods 0.000 description 12
- 239000007789 gas Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 239000006059 cover glass Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920002545 silicone oil Polymers 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、電界発光表示パネル（以下、ＥＬパネルと略
称する。）に係り、特に、絶縁破壊や蛍光層の輝度劣化
を防止することによって長寿命化を図ったＥＬパネルに
関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an electroluminescent display panel (hereinafter abbreviated as EL panel), and in particular, by preventing dielectric breakdown and luminance deterioration of a fluorescent layer. This relates to an EL panel that has a longer lifespan.
［従来の技術］
一般にＥＬパネルは、蛍光体を含んだ誘電体層からなる
発光層に強い電界（ｌ Ｏ６Ｖ／Ｃｍ以上）を加えるこ
とにより、蛍光体表面の伝導性の部分と誘電体層との界
面に生じた電子や発光層内に存在している電子を移動さ
せ、これらを発光中心に衝突させて励起発光させること
によって表示を行うものである。[Prior Art] Generally, in an EL panel, a strong electric field (more than lO6V/Cm) is applied to a light-emitting layer consisting of a dielectric layer containing a phosphor, so that the conductive portion of the surface of the phosphor and the dielectric layer are connected to each other. Display is performed by moving electrons generated at the interface of the light emitting layer and electrons existing in the light emitting layer, and colliding with the light emitting center to excite and emit light.
この上うなＥＬパネルにおいては、現在種々の形式のも
のが提案されているが、寿命や発光輝度の点から薄１模
交流駆動形のＥＬパネルが有望視されており、一部では
実用化されている。Various types of EL panels are currently being proposed, but thin 1-type AC-driven EL panels are considered promising in terms of lifespan and luminance, and some have not yet been put into practical use. ing.
第４図は、典型的なＥＬパネルの構造を示す模式的断面
図である。ここで１０１は、例えばガラス等の透光性材
料からなる基板であり、この基板１０１の−・方の而（
図中では上面）には、ＳｎｏｚｉｈあるいはＩ Ｔ Ｏ
（Ｉｎｄｉｕｍ−Ｔｉｎ−Ｏｘｉｄｅ）薄膜等の透光性
の電極１０２が形成されている。そして、この？ｆＪＪ
ｉ１０２上には、Ｙ２Ｏ１等よりなる第１の誘電体層１
０３、ＺｎＳ：Ｍｎ等の蛍光体を含む発光層１０４及び
第２の誘電体層１０５が、真空蒸着法やスパッタリング
法、あるいは電子ビーム蒸着法などの手段によって、順
次積層被着されている。なお、誘電体層を発光層の片面
のみに設けた構造のＥＬパネルも知られている。さらに
、第２の誘電体層１０５上には、Ａ１膜等の背面電極１
０６が形成されている。ＥＬパネルによってドツトマト
リクス表示を行おうとするならば、前記電極１０２と背
面電極１０６とは、それぞれストライブ状に形成し、そ
れぞれの配列方向が互いに直交するような構造にすれば
よい。そして、背面？ｆＥｉ１０６と電極１０２とは、
駆動回路部１０７等に接続されてあり、表示信号が与え
られるように構成されている。FIG. 4 is a schematic cross-sectional view showing the structure of a typical EL panel. Here, 101 is a substrate made of a transparent material such as glass, and the side of this substrate 101 is (
(Top surface in the figure) is Snozih or ITO
A translucent electrode 102 such as a (Indium-Tin-Oxide) thin film is formed. And this? fJJ
On i102, a first dielectric layer 1 made of Y2O1 etc.
03, ZnS: A light emitting layer 104 containing a phosphor such as Mn and a second dielectric layer 105 are sequentially deposited in a stacked manner by means such as vacuum evaporation, sputtering, or electron beam evaporation. Note that EL panels having a structure in which a dielectric layer is provided only on one side of a light emitting layer are also known. Further, on the second dielectric layer 105, a back electrode 1 such as an A1 film is provided.
06 is formed. If a dot matrix display is to be performed using an EL panel, the electrode 102 and the back electrode 106 may be formed in the form of stripes, and their arrangement directions may be orthogonal to each other. And the back? The fEi 106 and the electrode 102 are
It is connected to the drive circuit section 107 and the like, and is configured to be supplied with a display signal.
一般に前述のような構成のＥＬパネルは、製造工程で完
全に排除することが難しい微小なゴミ等のために、薄膜
にピンホールやクラックのような欠陥を多数含んでおり
、そのため湿気に対しては非常に喝い。即ち第４図に示
したような多重構造において、薄膜にピンホール等があ
ると、ここから水分が浸透することによって層間剥離を
生じてしまうことがある。そして動作時間の経過ととも
に剥離領域は拡大し、発光画素中の非発光点として観察
される。さらに水分の浸透によって絶縁破壊をおこして
しまうこともある。In general, EL panels with the above-mentioned configuration have many defects such as pinholes and cracks in the thin film due to minute dust that is difficult to completely eliminate during the manufacturing process, and therefore are difficult to resist moisture. is very hot. That is, in a multilayer structure as shown in FIG. 4, if there are pinholes or the like in the thin film, moisture may penetrate through the pinholes and cause delamination. Then, as the operating time passes, the peeled area expands and is observed as a non-light-emitting point in the light-emitting pixel. Furthermore, penetration of moisture may cause dielectric breakdown.
このような問題点を解決するものとして、ＥＬ素子が形
成されている側の基板上にカバーガラスを接着してＥＬ
素子を覆い、このカバーガラスの中にシリコンオイルを
封入してＥＬ素子を湿気等から遮断し、ＥＬパネルの信
頼性を向上させようという試みがなされている。しかし
この手段では、シリコンオイル中にも水分が存在するこ
と、及び基板とカバーガラスとの接着にエポキシ樹脂を
用いていることにより、水分を完全には遮断できず、信
頼性が十分であるとは言い難い。To solve these problems, a cover glass is glued onto the substrate on which the EL element is formed.
Attempts have been made to improve the reliability of EL panels by covering the EL elements and sealing silicone oil in the cover glass to shield the EL elements from moisture and the like. However, this method cannot completely block out moisture due to the presence of moisture in the silicone oil and the use of epoxy resin to bond the substrate and cover glass, so it is not reliable enough. It's hard to say.
そこで、湿気等によるＥＬ素子の劣化を防ぐ対策として
、本願出願人は、第５図に示すような構造のＥＬパネル
を提案している。Therefore, as a measure to prevent deterioration of EL elements due to moisture and the like, the applicant of the present application has proposed an EL panel having a structure as shown in FIG.
このＥＬパネルは、低融点ソルダーガラスによって基板
２０１の周辺に背面容器部２０２を封着して外囲器を構
成し、該外囲器内に電界発光素子２０３（以下、ＥＬ素
子２０３と略称する。）を封入した構造とされている。In this EL panel, a rear container part 202 is sealed around a substrate 201 using low melting point solder glass to form an envelope, and an electroluminescent element 203 (hereinafter abbreviated as EL element 203) is placed inside the envelope. ).
そして外囲器の内部は真空とするか、又は乾燥した不活
性ガス等を導入しである。The inside of the envelope is vacuumed or a dry inert gas or the like is introduced.
この場合、ＥＬ素子２０３に対して、外部から駆動用の
信号を供給する必要上、外部端子が基板２０１と背面容
器部２０２との封着部分を４通することになる。In this case, since it is necessary to supply a driving signal to the EL element 203 from the outside, four external terminals are passed through the sealed portion between the substrate 201 and the rear container portion 202.
いま、このＥＬパネルの外部端子の導出部分を模式的に
拡大して示すと、第６図のようになる。Now, FIG. 6 shows a schematic enlarged view of the lead-out portion of the external terminals of this EL panel.
第６図は、Ｘ−Ｙマトリクス電極タイプでグラフィック
表示等を行うＥＬパネルであり、ＥＬ素子２０３を挟ん
でＸ方向の電極２０４と、Ｙ方向の電極２０５とが交差
して配設される。基板２０１側から表示を観察する場合
には、電極２０４はＳｎＯ２や［ＴＯ等の材料を用いて
透明電極として形成される。電極２０５は、一般にＡＵ
蒸着膜である。FIG. 6 shows an EL panel of the X-Y matrix electrode type that displays graphics, etc., in which an electrode 204 in the X direction and an electrode 205 in the Y direction are arranged to intersect with each other with an EL element 203 in between. When observing the display from the substrate 201 side, the electrode 204 is formed as a transparent electrode using a material such as SnO2 or [TO. Electrode 205 is generally AU
It is a vapor deposited film.
そして、これらの電極２０４，２０５を、そのまま基板
周辺まで延在させ、外部端子としている。そして、この
外部端子上に低融点ソルダーガラス２０６が図示斜線の
ように塗布され、背面容器部２０２が封着される。These electrodes 204 and 205 are extended as they are to the periphery of the substrate to serve as external terminals. Then, a low melting point solder glass 206 is applied onto the external terminals as shown by diagonal lines in the figure, and the rear container portion 202 is sealed.
［発明が解決しようとする問題点］
ところが前述のような構成のＥＬパネルにおいては、背
面容器部２０２を基板２０１に封着させている低融点ソ
ルダーガラス２０６が、ＡＩｌやＩＴＯ等よりなる電極
２０４，２０５を腐食させて、その電気的特性を悪化さ
せてしまうという問題点があった。この原因は、低融点
ソルダーガラス２０６中のＰｂＯが酸化作用を持ってい
るため、封着の際液状になったガラス中の成分が、例え
ばＡｆｉ電極を酸化させ、Ａ１をＡ１□０３のような形
でガラス中に拡散させてしまうためであると考えられる
。そしてこの対策としては、八１電極を厚くする方法や
ＰｂＯ系以外の低融点ソルダーガラスを用いること等が
考えられる。しかしながらＡ２電極を厚くする方法では
、第６図からも明らかなように、背面容器部２０２の外
に導出されている外部端子と電ｊ４２０４，２０５とは
一括して形成するので、一般に外部端子部分を厚くする
と、電極部分も不必要に厚くなってしまう。[Problems to be Solved by the Invention] However, in the EL panel configured as described above, the low melting point solder glass 206 that seals the rear container portion 202 to the substrate 201 is connected to the electrode 204 made of Al, ITO, etc. , 205 and deteriorate their electrical characteristics. The reason for this is that PbO in the low melting point solder glass 206 has an oxidizing effect, so components in the glass that become liquid during sealing oxidize the Afi electrode, causing A1 to become A1□03. This is thought to be because the shape of the particles causes them to diffuse into the glass. Possible countermeasures to this problem include increasing the thickness of the 81 electrode and using a low melting point solder glass other than PbO type. However, in the method of increasing the thickness of the A2 electrode, as is clear from FIG. 6, the external terminal led out of the rear container portion 202 and the electrodes J4204, 205 are formed together, so generally the external terminal portion If the thickness is increased, the electrode portion also becomes unnecessarily thick.
またＡ１の厚みは１１０００ｎ以上にする必要があり、
このようにＡ１を厚くしておくと素子が絶縁破壊を起こ
した時に、溶けたＡ２が下地電極と接触して潰滅的な絶
縁破壊に発展する危険性が大きくなる。ＥＬ素子２０３
の電極部分はそのままで、外部端子部分だけを１５ く
することも考えられるが、工程が複雑になり好ましくな
い。一方、ＰｂＯ系以外の低融点ソルダーガラスにはＺ
ｎＯ系等があるが、融点や信頼性の点で現状において使
用可能なものは見当らない。Also, the thickness of A1 needs to be 11000n or more,
If A1 is made thick in this manner, when dielectric breakdown occurs in the element, there is a greater risk that the melted A2 will come into contact with the base electrode and develop into catastrophic dielectric breakdown. EL element 203
It is conceivable to leave the electrode portions as they are and reduce the external terminal portions by 15°, but this would complicate the process and is not preferred. On the other hand, Z
Although there are nO-based materials, there are currently no usable materials in terms of melting point or reliability.
また、ＰｂＯが少ないガラスを用いてＡＩ、ＩＴＯ電極
上に所謂クロス層を形成し、これら電極が腐食される程
度を軽減させる方法も考えられる。しかし、この方法で
は比較的高い温度で熱処理が必要なこと、およびこのガ
ラス中にＰｂＯを少なからず含むため前記腐食に対して
根本的な解決にはならないと考えられる。Another possible method is to form a so-called cross layer on the AI and ITO electrodes using glass containing less PbO to reduce the degree of corrosion of these electrodes. However, since this method requires heat treatment at a relatively high temperature and the glass contains a considerable amount of PbO, it is not considered to be a fundamental solution to the corrosion.
［発明の目的］
防湿効果に優れているため寿命が長く、信頼性の高い電
界発光表示パネルを提供することを目的とし、特に基板
と容器部との封着部を貫通している外部端子部が、封着
に用いられている低融点ソルダーガラスによフてその電
気的特性に悪影響を受けることがないような構造の電界
発光表示パネルを実現することを目的としている。[Purpose of the invention] The purpose of the invention is to provide an electroluminescent display panel that has a long life and is highly reliable due to its excellent moisture-proofing effect, and in particular, the external terminal portion that penetrates the sealing portion between the substrate and the container portion. However, the object of the present invention is to realize an electroluminescent display panel having a structure in which the electrical characteristics are not adversely affected by the low melting point solder glass used for sealing.
［間屈点を解決するための手段］
本発明の電界発光表示パネルは、電界発光素子が形成さ
れた基板周辺部に低融点ソルダーガラスによって容器部
を気密に封着してなる電界発光表示パネルであって、前
記電界発光素子の各電極に連設され、かつ前記基板と容
器部との封着部を気密に貫通して外部へ導出される外部
端子部を有し、この外部端子部の少なくとも前記低融点
ソルダーガラスが塗着される部分にあらかじめ保護層が
形成されたことを特徴としている。[Means for solving the bending point] The electroluminescent display panel of the present invention is an electroluminescent display panel in which a container portion is hermetically sealed to the peripheral portion of a substrate on which an electroluminescent element is formed with a low melting point solder glass. The device has an external terminal portion connected to each electrode of the electroluminescent element and led out to the outside through an airtight sealing portion between the substrate and the container portion. It is characterized in that a protective layer is previously formed at least on the portion to which the low melting point solder glass is applied.
［実施例］
以下、本発明の実施例を第１図〜第３図によって説明す
る。[Example] Hereinafter, an example of the present invention will be described with reference to FIGS. 1 to 3.
第１図（ａ）に示すように、透明なガラス製の基板１上
には、ＩＴＣＮＩＱ等よりなる複数本の透明電極２が被
着形成されている。この透明型Ｊ４２は帯状で、所定間
隔をおいて互いに平行とされている。また、この透明電
極２の両端部は基板１の両端縁部まで連続して延設され
、外部から駆動４３号を人力するための外部端子部２ａ
とされている。As shown in FIG. 1(a), a plurality of transparent electrodes 2 made of ITCNIQ or the like are formed on a transparent glass substrate 1. As shown in FIG. The transparent molds J42 are strip-shaped and are parallel to each other at predetermined intervals. Further, both ends of the transparent electrode 2 are continuously extended to both end edges of the substrate 1, and an external terminal part 2a for manually operating the drive No. 43 from the outside.
It is said that
この透明電極２の上には、例えばＹ２Ｏ３等よりなる第
１の誘電体層３が被着形成されており、その上には例え
ばＺｎＳ：Ｍｎ蛍光体等よりなる発光層４が被着形成さ
れている。そして発光層４の上には、例えばＹ２Ｏ３等
よりなる第２の誘電体層５が被着形成されており、該誘
電体層５の上にはアルミニウムの薄膜層が被着され、背
面電極６とされている。この背面電極６は、所定間隔を
おいて互いに平行に配設された帯状の電極であって、ｒ
Ｒ記透明電極２とは直交する向きに配設されている。こ
れらの両電極２．６はＸ−Ｙマトリクスタイプの電極群
を構成しており、本実施例の電界発光表示パネル７（以
下、ＥＬパネル７と略称する。）はグラフィック表示が
行なえるように構成されている。また、前記背面電極６
は、基板１の端縁部にまで連続して延設され、基板ｉ上
の両端部は外部から駆動信号が人力される外部端子部６
ａとされている。A first dielectric layer 3 made of, for example, Y2O3 is deposited on the transparent electrode 2, and a light emitting layer 4 made of, for example, ZnS:Mn phosphor is deposited thereon. ing. A second dielectric layer 5 made of, for example, Y2O3 is deposited on the light emitting layer 4, and a thin aluminum layer is deposited on the dielectric layer 5, and a back electrode 6 is deposited on the dielectric layer 5. It is said that This back electrode 6 is a band-shaped electrode arranged parallel to each other at a predetermined interval, and is r
It is disposed in a direction perpendicular to the R-labeled transparent electrode 2. These two electrodes 2.6 constitute an X-Y matrix type electrode group, and the electroluminescent display panel 7 (hereinafter abbreviated as EL panel 7) of this embodiment is designed so that graphic display can be performed. It is configured. Further, the back electrode 6
is extended continuously to the edge of the board 1, and both ends of the board i are provided with an external terminal part 6 to which a drive signal is input manually from the outside.
It is said to be a.
次に、重連のように基板１上に構成された電界発光表示
素子８（以下、ＥＬ素子８と略称する。）の上には、保
護層９が被着形成されている。この保護層９は、後述す
る容器部１０を基板！上に封着固定するのに用いられる
低融点ソルダーガラス１１が、前記両電極２，６の外部
端子部２ａ、６ａを腐食させることを防止するための層
である。第１図（ａ）に示すように、外部端子部を含む
ＥＬ素子８上のほぼ全面にわたって保護層９を形成する
ようにすれば、ＥＬ素子８自体の防湿性をさらに高める
ことができ、また保護層９の形成方法として蒸着法等を
用いる場合には、外部端子部２ａ、６ａの特定部分だけ
に選択的に保護層を形成させる場合と比べて作業性が良
くなる。もちろん、第１図（ｂ）に示すように、外部端
子部６ａの必要箇所だけを保護層９で覆うようにしても
よい。保護層９を構成する物質は、低融点ソルダーガラ
ス１１に対して安定なものであればよく、成膜の容易さ
・電気的絶縁性等の点から１例えば５ｉｎ２．Ａｌ２Ｏ
２，Ｓｉ、Ｎ、。Next, a protective layer 9 is formed on the electroluminescent display elements 8 (hereinafter abbreviated as EL elements 8) which are arranged on the substrate 1 in a stacked manner. This protective layer 9 serves as a substrate for a container portion 10, which will be described later. The low melting point solder glass 11 used for sealing and fixing on top is a layer for preventing the external terminal portions 2a, 6a of both the electrodes 2, 6 from corroding. As shown in FIG. 1(a), by forming a protective layer 9 over almost the entire surface of the EL element 8 including the external terminal portion, the moisture resistance of the EL element 8 itself can be further improved. When a vapor deposition method or the like is used as a method for forming the protective layer 9, workability is improved compared to a case where the protective layer is selectively formed only on specific portions of the external terminal portions 2a, 6a. Of course, as shown in FIG. 1(b), only necessary portions of the external terminal portion 6a may be covered with the protective layer 9. The material constituting the protective layer 9 may be any material as long as it is stable with respect to the low melting point solder glass 11, and from the viewpoint of ease of film formation, electrical insulation, etc., the material may be 1, for example, 5 in 2. Al2O
2, Si, N,.
Ｙ２０ｚ 、Ｔａ２ｏｓ 、Ｓｍ２０３等を用いること
ができる。また、保護層９の膜厚は５０ｎｍ以」−あれ
ば十分と考えられるが、形成時の作業性や防湿強度等を
考慮して最大膜厚を１０００〜２０００ ｎｍとしてお
くのが適当である。Y20z, Ta2os, Sm203, etc. can be used. Further, it is thought that it is sufficient if the thickness of the protective layer 9 is 50 nm or more, but it is appropriate to set the maximum thickness to 1000 to 2000 nm in consideration of workability during formation, moisture proof strength, etc.
次に第２ＶＡに示すように、ＥＬ素子８に接触しないよ
うに、容器部１０がＥＬ素子８を覆って基板ｌ上に低融
点ソルダーガラス１１で封着固定されており、該容器部
１０の内部は高真空状態に保持されている。保護層９に
覆われた内外部端子部２ａ、６ａは、低融点ソルダーガ
ラス１１よりなる容器部１０と基板ｌとの封着部分を気
密に貫通して容器部ｌＯ外に導出されており、従来のよ
うにアルミニウム製の外部端子部が低融点ソルダーガラ
スによって腐食されてしまうといった不都合はおこらな
い。容器部１０は、基板１に封着される側が開放された
略箱形の部材で、該形状に一体成型されたものでもよい
し、板状の部材を組立てたものであってもよい。容器部
１０の材質は、膨張係数の関係から、基板ｌと同材質で
あることが好ましい。また容器部１０と基板１を封着す
る低融点ソルダーガラス１１は、その融点が容器部１０
の歪点よりも低く、膨張係数は容器部１０や基板ｌとほ
ぼ等しいことが望ましい。Next, as shown in the second VA, a container part 10 is sealed and fixed on the substrate l with a low melting point solder glass 11, covering the EL element 8 so as not to contact the EL element 8. The interior is kept in a high vacuum state. The inner and outer terminal parts 2a and 6a covered with the protective layer 9 are led out to the outside of the container part 1O by passing through the sealed part between the container part 10 and the substrate l made of low melting point solder glass 11 in an airtight manner. There is no problem that the aluminum external terminal portion is corroded by the low melting point solder glass as in the conventional case. The container section 10 is a substantially box-shaped member with the side sealed to the substrate 1 open, and may be integrally molded into this shape, or may be an assembly of plate-like members. It is preferable that the material of the container part 10 is the same as that of the substrate 1 in terms of the coefficient of expansion. Further, the low melting point solder glass 11 that seals the container part 10 and the substrate 1 has a melting point that is lower than that of the container part 10.
It is desirable that the expansion coefficient is lower than the strain point of , and the expansion coefficient is approximately equal to that of the container portion 10 and the substrate l.
次に、前記ＥＬパネル７の製造工程について説明する。Next, the manufacturing process of the EL panel 7 will be explained.
第３図に示すように、ＥＬ素子８が形成された基板１と
、開口端面に低融点ソルダーガラス１１が付着されてい
る容器部１０とを、真空チャンバー１２内に配置する。As shown in FIG. 3, a substrate 1 on which an EL element 8 is formed and a container part 10 having a low melting point solder glass 11 attached to an open end surface are placed in a vacuum chamber 12.
真空チャンバー１２にはロータリポンプ１３とデフユー
ジョンボンブ１４よりなる真空排気系１５が接続されて
いる。また、真空チャンバー１２には内部にガスを導入
するための導入管１６が接続連通されており、真空チャ
ンバー１２外の導入管１６には、脱湿材１６ａとバルブ
１６ｂが設けられている。また真空チャンバー１２の内
部には、ヒータ１７ａを有する固定台１７と、該固定台
１７の上方で上下動自在とされたヒータ１８ａを有する
可動台１８とが設けられている。A vacuum evacuation system 15 consisting of a rotary pump 13 and a diffusion bomb 14 is connected to the vacuum chamber 12 . Further, an introduction pipe 16 for introducing gas into the vacuum chamber 12 is connected and communicated with the vacuum chamber 12, and the introduction pipe 16 outside the vacuum chamber 12 is provided with a dehumidifying material 16a and a valve 16b. Further, inside the vacuum chamber 12, a fixed table 17 having a heater 17a and a movable table 18 having a heater 18a which is vertically movable above the fixed table 17 are provided.
さて、ＥＬ素子８を下面にして前記ガラス基板１を可動
台１８に取付け、封着端面が上を向くように容器部１０
を固定台１７上の所定位置に据付ける。そして、真空排
気系１５を駆動して真空チャンバー１２の内部を高真空
状態にし、ヒータ１７ａ、１８ａを用いて低融点ソルダ
ーガラス１１が軟化する手前の温度まで基板１と容器部
１０を加熱して脱ガスを行う。Now, the glass substrate 1 is mounted on the movable base 18 with the EL element 8 facing downward, and the container part 10 is mounted so that the sealed end face faces upward.
is installed at a predetermined position on the fixed base 17. Then, the vacuum evacuation system 15 is driven to bring the inside of the vacuum chamber 12 into a high vacuum state, and the substrate 1 and the container part 10 are heated using the heaters 17a and 18a to a temperature just before the low melting point solder glass 11 softens. Perform degassing.
この後、ヒータ１７ａを用いて容器部１０を加熱し、こ
れを低融点ソルダーガラス１１の軟化点以上の温度に上
げる。基板１は、容器部１０とほぼ同温度となるように
、ヒータ１８ａを用いて調節する。そして、可動台１８
を下方に移動させ、基板１を容器部１０に押付けて、両
者を封着する。その後、温度を下げて低融点ソルダーガ
ラス！ｌを固化させる。Thereafter, the container portion 10 is heated using the heater 17a to raise the temperature to a temperature equal to or higher than the softening point of the low melting point solder glass 11. The temperature of the substrate 1 is adjusted to be approximately the same as that of the container portion 10 using the heater 18a. And the movable table 18
is moved downward, and the substrate 1 is pressed against the container part 10 to seal them together. After that, lower the temperature and use low melting point solder glass! solidify l.
また、気密容器が大形化する場合は、耐圧性をもたせる
ために、ＥＬパネル７内に所定圧のガスを導入するよう
にしてもよい。この場合は、封着にさきだちバルブ１６
ｂを開き、導入管１６を介して、真空チャンバー１２内
にアルゴン、窒素等の不活性ガスや、炭酸ガス、酸素等
を導入する。Further, when the airtight container is enlarged, gas at a predetermined pressure may be introduced into the EL panel 7 in order to provide pressure resistance. In this case, the valve 16 is
b is opened, and inert gas such as argon or nitrogen, carbon dioxide gas, oxygen, etc. are introduced into the vacuum chamber 12 through the introduction pipe 16.
この際、導入するガスは液化ガスを気化した湿気の極め
て少ないもの、高圧に圧縮して水分を除去したもの、あ
るいはモレキュラシーブ・活性アルミナなどの吸湿材１
６ａ中を通過させて脱湿したものを使用する。導入する
ガスの圧力は１．０〜３気圧程度あればよい。しかる後
封着工程を行うことによりＥＬパネル７内を０．４〜１
．６気圧程度に保つことができ、耐圧性にすぐれたバネ
ルとすることができる。At this time, the gas introduced is a gas with extremely low moisture obtained by vaporizing liquefied gas, a gas compressed under high pressure to remove moisture, or a moisture-absorbing material such as molecular sieve or activated alumina.
6a to dehumidify it. The pressure of the introduced gas may be about 1.0 to 3 atm. After that, by performing a sealing process, the inside of the EL panel 7 is 0.4 to 1
．． The pressure can be maintained at about 6 atmospheres, resulting in a panel with excellent pressure resistance.
また容器部に予め排気孔を設けておき、前面板としての
基板と容器部を位置合わせし重ね合わせたまま、前記真
空チャンバー１２と同様の封着装置内に配置して、基板
と容器部をその周縁部にて封着した後、別に配置した蓋
部材により面記排気孔を気密封上する様にしてもよい。In addition, an exhaust hole is provided in the container section in advance, and the substrate as a front plate and the container section are aligned and overlapped and placed in a sealing device similar to the vacuum chamber 12, and the substrate and the container section are placed in a sealing device similar to the vacuum chamber 12. After sealing at the peripheral edge, the exhaust hole may be hermetically sealed using a separately disposed lid member.
また、容器部は、図示のものの他、板ガラスとスペーサ
ーにより形成してもよいし、ざらにＥＬ素子は通常非常
に薄い（１〜１０μｍ）ので、板ガラスと低融点ソルダ
ーガラスだけで形成することもできる。In addition to the one shown in the figure, the container part may be formed from a plate glass and a spacer, and since EL elements are usually very thin (1 to 10 μm), it may also be formed from only a plate glass and low melting point solder glass. can.
［発明の効果］
本発明のＥＬパネルは、ＥＬ−Ｊ子の各７「極から延設
された外部端子部のうち、少くとも容器部と基板とを封
着固定する低融点ソルダーガラス、の封着部を貫通する
部分に、該端子部を低融点ソルダーガラスから保護する
保護層が設けられた構成になっている。従って本発明に
よれば、ＥＬ素子の各電極に各種駆動信号等を伝える外
部端子部の電気的特性が、低融点ソルダーガラスによっ
て悪影響を受ける恐れがないという効果があり、防湿効
果に優れているため寿命が長く、信頼性の高いＥＬパネ
ルを実現できるという効果がある。[Effects of the Invention] The EL panel of the present invention has a low melting point solder glass that seals and fixes at least the container part and the substrate in the external terminal part extending from each of the seven poles of the EL-J element. The structure is such that a protective layer for protecting the terminal portion from low melting point solder glass is provided in the portion that penetrates the sealing portion.Therefore, according to the present invention, various drive signals etc. are applied to each electrode of the EL element. It has the effect that the electrical characteristics of the external terminals that transmit data are not adversely affected by low melting point solder glass, and has the effect of realizing a highly reliable EL panel with a long life due to its excellent moisture-proofing effect. .
第１図（ａ）は本発明の一実施例を示す断面を
図、第９図（ｂ）は同実施例において保護層の形成箇所
を封着部の近傍だけに限定した場合を示す断面図、第２
図は同実施例における容器部とＥＬ素子を示す断面図、
第３図は同実施例におけるＥＬパネルの製造工程を示す
模式図、第４図は典型的なＥＬパネルの構造を示す模式
的断面図、第５図は従来のＥＬパネルを示す断面図、第
６図は第５図における外部端子部の容器部外への導出部
分を示す模式的な拡大斜視図である。
１−・基板、２−・電極としての透明電極、６・・・電
極としての背面電極、２ａ、６ａ＝外部端子部、７−電
界発光表示パネル（ＥＬパネル）、８・−電界発光素子
（ＥＬ素子）、９・−保護層、ｉ ｏ −・・容器部、
１１−・低融点ソルダーガラス。
第１図
（ａ）
１．０
（ｂ）
ｎ
第２図FIG. 1(a) is a cross-sectional view showing one embodiment of the present invention, and FIG. 9(b) is a cross-sectional view showing a case where the protective layer is formed only in the vicinity of the sealing part in the same embodiment. , second
The figure is a cross-sectional view showing the container part and the EL element in the same example.
FIG. 3 is a schematic diagram showing the manufacturing process of the EL panel in the same example, FIG. 4 is a schematic cross-sectional view showing the structure of a typical EL panel, FIG. 5 is a cross-sectional view showing a conventional EL panel, and FIG. FIG. 6 is a schematic enlarged perspective view showing a portion of the external terminal portion leading out of the container portion in FIG. 5. 1--Substrate, 2--Transparent electrode as electrode, 6--Back electrode as electrode, 2a, 6a=external terminal section, 7--Electroluminescent display panel (EL panel), 8--Electroluminescent element ( EL element), 9 - protective layer, i o - container part,
11-・Low melting point solder glass. Figure 1 (a) 1.0 (b) n Figure 2
Claims (2)
ソルダーガラスによって容器部を気密に封着してなる電
界発光表示パネルにおいて、前記電界発光素子の各電極
に連設され、かつ前記基板と容器部との封着部を気密に
貫通して外部へ導出される外部端子部を有し、この外部
端子部の少なくとも前記低融点ソルダーガラスが塗着さ
れる部分にあらかじめ保護層が形成されたことを特徴と
する電界発光表示パネル。(1) In an electroluminescent display panel in which a container portion is hermetically sealed with low melting point solder glass to the peripheral portion of a substrate on which an electroluminescent element is formed, the substrate is connected to each electrode of the electroluminescent element, and It has an external terminal portion that airtightly penetrates the sealed portion between the container portion and the container portion and is led out to the outside, and a protective layer is formed in advance on at least a portion of the external terminal portion to which the low melting point solder glass is applied. An electroluminescent display panel characterized by:
Ｓｉ＿３Ｎ＿４，Ｙ＿２Ｏ＿３，Ｔａ＿２Ｏ＿５，Ｓｍ
＿２Ｏ＿３の中から選ばれた少なくとも一種類の物質よ
りなる薄膜である特許請求の範囲第１項記載の電界発光
表示パネル。(2) The protective layer is SiO_2, Al_2O_3,
Si_3N_4, Y_2O_3, Ta_2O_5, Sm
The electroluminescent display panel according to claim 1, which is a thin film made of at least one substance selected from _2O_3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61219283A JPS6375783A (en) | 1986-09-19 | 1986-09-19 | Electric field light emitting display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61219283A JPS6375783A (en) | 1986-09-19 | 1986-09-19 | Electric field light emitting display panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6375783A true JPS6375783A (en) | 1988-04-06 |
Family
ID=16733083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61219283A Pending JPS6375783A (en) | 1986-09-19 | 1986-09-19 | Electric field light emitting display panel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6375783A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002324663A (en) * | 2001-04-25 | 2002-11-08 | Toshiba Corp | Electric field luminous lamp and its manufacturing method |
| US6596134B2 (en) | 1994-12-13 | 2003-07-22 | The Trustees Of Princeton University | Method of fabricating transparent contacts for organic devices |
| JP2005215681A (en) * | 2004-01-30 | 2005-08-11 | Samsung Sdi Co Ltd | Flat panel display device and method of manufacturing the same |
| JP2006352044A (en) * | 2005-06-20 | 2006-12-28 | Matsushita Electric Works Ltd | Functional organic material element and organic solar cell |
| JP2011159630A (en) * | 1998-08-03 | 2011-08-18 | Dupont Displays Inc | Encapsulation of polymer-based solid state device with inorganic material |
-
1986
- 1986-09-19 JP JP61219283A patent/JPS6375783A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6596134B2 (en) | 1994-12-13 | 2003-07-22 | The Trustees Of Princeton University | Method of fabricating transparent contacts for organic devices |
| US7173369B2 (en) | 1994-12-13 | 2007-02-06 | The Trustees Of Princeton University | Transparent contacts for organic devices |
| US7714504B2 (en) | 1994-12-13 | 2010-05-11 | The Trustees Of Princeton University | Multicolor organic electroluminescent device formed of vertically stacked light emitting devices |
| US8324803B2 (en) | 1994-12-13 | 2012-12-04 | The Trustees Of Princeton University | Transparent contacts for organic devices |
| JP2011159630A (en) * | 1998-08-03 | 2011-08-18 | Dupont Displays Inc | Encapsulation of polymer-based solid state device with inorganic material |
| JP2002324663A (en) * | 2001-04-25 | 2002-11-08 | Toshiba Corp | Electric field luminous lamp and its manufacturing method |
| JP2005215681A (en) * | 2004-01-30 | 2005-08-11 | Samsung Sdi Co Ltd | Flat panel display device and method of manufacturing the same |
| JP2006352044A (en) * | 2005-06-20 | 2006-12-28 | Matsushita Electric Works Ltd | Functional organic material element and organic solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4384356B2 (en) | Flexible substrate | |
| KR960002458A (en) | Bipolar Plates for Flat Panel Displays with Integrated Getters | |
| EP0306296B1 (en) | Thin film electroluminescence displaying apparatus | |
| JPH078944U (en) | Vacuum electronic device and its envelope | |
| CN1674735B (en) | Electroluminescence device having lead line with low resistance | |
| JPS6375783A (en) | Electric field light emitting display panel | |
| KR100287863B1 (en) | Organic electroluminescence device | |
| US3931436A (en) | Segmented gas discharge display panel device and method of manufacturing same | |
| JP2001035654A (en) | Display panel and its manufacture | |
| JPH10233587A (en) | Airtight container | |
| JPH1140347A (en) | Organic electroluminescent element | |
| JPS62295090A (en) | Field light emitting display panel and manufacture thereof | |
| JPS63226684A (en) | Electric field light emitting display panel | |
| CN100426550C (en) | Planar display device and its manufacture | |
| US4029371A (en) | Method of manufacturing gas discharge display panels | |
| JPS598039B2 (en) | Thin film EL panel | |
| KR200257245Y1 (en) | Organic Electroluminescence Display Device | |
| JPH07272848A (en) | Electroluminescent element | |
| JPH07249388A (en) | Gastight seal structure and manufacture thereof | |
| US4009407A (en) | Segmented electrode type gas discharge display panel with mercury giver means | |
| JPH05190280A (en) | Thin film el element | |
| JP2005079086A (en) | Anode plate of field emission display | |
| JPS59119658A (en) | Fluorescent character display tube | |
| US4119378A (en) | Segmented gas discharge display panel device and method of manufacturing same | |
| US4051404A (en) | Gas discharge display panel with fused sealing plug |