JPS6369786A - Manufacture of aluminum nitride base sheet with metallized layer - Google Patents
Manufacture of aluminum nitride base sheet with metallized layerInfo
- Publication number
- JPS6369786A JPS6369786A JP21057286A JP21057286A JPS6369786A JP S6369786 A JPS6369786 A JP S6369786A JP 21057286 A JP21057286 A JP 21057286A JP 21057286 A JP21057286 A JP 21057286A JP S6369786 A JPS6369786 A JP S6369786A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum nitride
- metallized layer
- manufacture
- base sheet
- nitride base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 claims description 21
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 9
- 239000010953 base metal Substances 0.000 claims description 9
- 238000010304 firing Methods 0.000 claims description 9
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 4
- 239000001569 carbon dioxide Substances 0.000 claims description 4
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 4
- 238000000034 method Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000011572 manganese Substances 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000010955 niobium Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229940116411 terpineol Drugs 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229920002845 Poly(methacrylic acid) Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- PCEXQRKSUSSDFT-UHFFFAOYSA-N [Mn].[Mo] Chemical compound [Mn].[Mo] PCEXQRKSUSSDFT-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 230000009970 fire resistant effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000010020 roller printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- -1 titanium hydride Chemical compound 0.000 description 1
- 229910000048 titanium hydride Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000003981 vehicle Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、メタライズ層をもった窒化アルミニウム基板
の製法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for manufacturing an aluminum nitride substrate having a metallized layer.
（従来の技術）
窒化アルミニウムは、高熱伝導性かつ絶縁性であること
から、電子部品のセラミック基板として検討されている
。通常、セラミック基板は、表面に電気伝導性のパター
ンを焼き付けるか、あるいはハンダ付は可能なメタライ
ズ層を形成させて使用される。(Prior Art) Aluminum nitride is being considered as a ceramic substrate for electronic components because of its high thermal conductivity and insulating properties. Ceramic substrates are usually used by baking an electrically conductive pattern onto the surface or forming a metallized layer that can be soldered.
窒化アルミニウム基板のメタライズは、まだ確立された
技術はなく実用化にいたっていない。その理由は、アル
ミナ等の酸化物セラミックのメタライズ法については、
次のような技術があるが、それらを単に窒化アルミニウ
ムに適用しても、実用的な密着強度が得られないからで
ある。There is no established technology for metallizing aluminum nitride substrates, and it has not yet been put to practical use. The reason is that regarding the metallization method of oxide ceramics such as alumina,
Although there are the following techniques, simply applying them to aluminum nitride does not provide practical adhesion strength.
■ モリブデン−マンガンペーストを基板に印刷し、湿
潤水素あるいは湿潤水素／窒素混合ガス中で焼成し回路
を形成する方法。■ A method in which a circuit is formed by printing molybdenum-manganese paste on a substrate and firing it in wet hydrogen or a wet hydrogen/nitrogen mixed gas.
■ Ａ ｇ ／ Ｐ ｄ 、 Ａ ｇ ／ Ｐ ｔ 、
Ａ ｕ 、 Ｃｕの金属微粉末をガラスフリフト、有
機バインダー等と混合しペースト化したものを、基板に
印刷、焼成することによって、回路を形成する方法。■ A g / P d, A g / P t,
A method of forming a circuit by mixing A u , Cu metal fine powder with glass lift, organic binder, etc. to form a paste, printing it on a substrate, and firing it.
■ セラミック基板に銅板を置き、反応性雰囲気中で加
熱する方法。■ A method in which a copper plate is placed on a ceramic substrate and heated in a reactive atmosphere.
（発明が解決しようとする問題点）
本発明者は、十分に高い密着強度を備えた窒化アルミニ
ウム基板の卑金属によるメタライズ法について種々検討
した結果、焼成雰囲気を炭素を含む雰囲気にすればよい
ことを見い出し本発明を完成した。(Problems to be Solved by the Invention) As a result of various studies on the metallization method using base metals for aluminum nitride substrates with sufficiently high adhesion strength, the inventor found that the firing atmosphere should be an atmosphere containing carbon. Heading Completing the Invention.
（問題点を解決するための手段）
すなわち、本発明は、窒化アルミニウム基板に卑金属を
含むペーストを塗布した後、一酸化炭素及び／又は二酸
化炭素を含む雰囲気中で焼成することを特徴とするメタ
ライズ層をもった窒化アル・ ミニラム基板の製法で
ある。(Means for Solving the Problems) That is, the present invention provides a metallization method characterized by applying a paste containing a base metal to an aluminum nitride substrate and then firing it in an atmosphere containing carbon monoxide and/or carbon dioxide. This is a method for manufacturing a layered aluminum nitride miniram substrate.
以下、さらに詳しく本発明について説明する。The present invention will be explained in more detail below.
卑金属ペーストとは、卑金属粉末を金属成分として含ん
でいるペーストのことである。卑金属としては、一般に
は、タングステン（Ｗ）、モリブデン（Ｍｏ）、マンガ
ン（Ｍｎ）、銅（Ｃｕ）、ニッケル（Ｎｉ）の粉末が用
いられるが、これらに限定されるものではない。この他
に微量の無機添加物として、Ｔ ｓ 、、 Ｓ ｒ 、
Ａ Ａ 、Ｔ ａ 、Ｃｒ ％Ｎｂ等の金属又は化合物
が使用されることもある。A base metal paste is a paste containing base metal powder as a metal component. As the base metal, powders of tungsten (W), molybdenum (Mo), manganese (Mn), copper (Cu), and nickel (Ni) are generally used, but are not limited to these. In addition, trace amounts of inorganic additives include T s , S r ,
Metals or compounds such as A A , T a , Cr%Nb may also be used.
これらの無機添加物の中にあっても、ＴｉとＮｂ、特に
Ｎｂは密着強度の付与効果にすぐれている。Among these inorganic additives, Ti and Nb, especially Nb, are excellent in the effect of imparting adhesion strength.
これらの卑金属成分の好適な割合を示すと、Ｗ又はＭｏ
７２〜９９重量％、Ｍｎ０．９〜１９重量％及びＴｉ又
はＴ＋化合物例えば水素化チタンθ〜９重量％、もしく
はＷ又はＭｏ７８〜９５重量％、Ｍｎ４〜２１重量％及
びＮｂ０〜１０重量％などである。The preferred proportions of these base metal components are W or Mo
72-99% by weight, Mn 0.9-19% by weight and Ti or T+ compounds such as titanium hydride θ-9% by weight, or W or Mo 78-95% by weight, Mn 4-21% by weight and Nb 0-10% by weight, etc. be.
卑金属以外のペースト成分としては、有機溶剤、ビヒク
ル、分散剤等があるが、これらは一般に用いられるテレ
ピネオール、ブチルカルピトール、エチルセルロース、
メチルセルロース、ポリメタクリル酸エステル等でよい
。Paste components other than base metals include organic solvents, vehicles, dispersants, etc., but these include commonly used terpineol, butyl calpitol, ethyl cellulose,
Methyl cellulose, polymethacrylic acid ester, etc. may be used.
一酸化炭素、二酸化炭素は、市販のボンベガスを使用し
てもよいが、窒素、水素、アルゴン等の非酸化性ガスと
併用するのが望ましい。その際の濃度としては、−酸化
炭素については、５０容量％以上特に６０〜８０容量％
であり、二酸化炭素については、０．５〜５０容量％特
に２〜１０容量％である。但しＮｉペーストの場合は一
酸化炭素の使用は好ましくない。Although commercially available cylinder gases may be used for carbon monoxide and carbon dioxide, it is desirable to use them in combination with non-oxidizing gases such as nitrogen, hydrogen, and argon. The concentration at that time is - for carbon oxide, 50% by volume or more, especially 60 to 80% by volume.
and for carbon dioxide, it is 0.5 to 50% by volume, especially 2 to 10% by volume. However, in the case of Ni paste, it is not preferable to use carbon monoxide.
卑金属ペーストを窒化アルミニウム基板上に塗布する方
法としては、スクリーン印刷が好ましいが、これに限定
する必要はなく、インクジェット方式、ローラー印刷、
はけ塗り等何を用いてもよい。ペーストを塗布した窒化
アルミニウム基板は、乾燥器にて溶剤を揮発させ、その
後、連続式ベルト炉、プッシャー炉もしくはバッチ焼成
炉等にて焼成する。焼成時に窒化アルミニウム基板は、
ＭｏやＡ １１２０３等の高融点金属や、耐火性のある
セラミック製の治具に収納しておくのが望ましい。焼成
温度としては、通常の名々のペーストの焼成温度でよく
、Ｃｕ ’−，Ｎ ｔの場合は８５０〜１３００℃程度
、Ｗ、Ｍｏの場合は１，１００〜１、７００℃程度であ
る。Screen printing is preferred as the method for applying the base metal paste onto the aluminum nitride substrate, but there is no need to limit it to this; inkjet methods, roller printing,
You can use any method such as brushing. The aluminum nitride substrate coated with the paste is subjected to volatilization of the solvent in a dryer, and then fired in a continuous belt furnace, pusher furnace, batch firing furnace, or the like. During firing, the aluminum nitride substrate
It is preferable to store it in a jig made of a high-melting point metal such as Mo or A 11203, or a fire-resistant ceramic. The firing temperature may be the usual firing temperature of famous pastes, which is about 850 to 1,300°C in the case of Cu'- and Nt, and about 1,100 to 1,700°C in the case of W and Mo.
窒化アルミニウム基板は焼結前のグリーンシートであっ
てもよく、その場合は、適当な条件下で脱バインダーを
行った後、１６００〜１９００℃で焼成するのがよい。The aluminum nitride substrate may be a green sheet before sintering, and in that case, it is preferable to remove the binder under appropriate conditions and then sinter at 1600 to 1900°C.
なお、窒化アルミニウム基板としては、常法により製造
されたものが好ましく使用される。Note that as the aluminum nitride substrate, one manufactured by a conventional method is preferably used.
（実施例） 以下、実施例をあげてさらに具体的に説明する。(Example) Hereinafter, the present invention will be explained in more detail with reference to Examples.
実施例１
表に示す種々のペーストをスクリーン印刷により、２１
ｎ０Ｆｆｆｌのパターン９ケを２５ｍ角、０．６５１ｍ
厚みの窒化アルミニウム基板に印刷し、１２０℃で１０
分間熱風乾燥器で乾燥した後、シリコニント炉の内径５
０φのＡｊｌ！ＺＯｆｆ製炉心管の中にセントした。Example 1 Various pastes shown in the table were screen printed to produce 21
9 patterns of n0Fffl 25m square, 0.651m
Printed on a thick aluminum nitride substrate and heated at 120℃ for 10
After drying in a hot air dryer for 5 minutes,
0φ Ajl! It was placed in a ZOff furnace tube.
これに、表に示すガスを２００ｍβ／分で流通しながら
所定温度まで界温し所定時間保持後冷却して取出した。The gas shown in the table was circulated through the gas at a rate of 200 mβ/min to reach a predetermined temperature, held for a predetermined time, and then cooled and taken out.
これに、実験隘１〜５については、無電解Ｎｉメッキを
施し、また実験隘６〜８についてはそのまま２ｆｌ角の
メタライズパッドに先端を曲げた０、６ｆｌφのスズメ
ッキ銅線をハンダ付けし、該スズメッキ銅線を５０ｆｉ
Ｚ分の速度で引張る方法により、密着強度を測定した。For Experiments 1 to 5, electroless Ni plating was applied, and for Experiments 6 to 8, a 0.6flφ tin-plated copper wire with a bent tip was soldered to a 2fl square metallized pad. 50fi tin plated copper wire
Adhesion strength was measured by a method of pulling at a speed of Z minutes.
その結果の９ケの平均値を表に示す。The average value of the nine results is shown in the table.
なお、使用したペーストは、金属成分２ｇにＰＭＭＡを
３０ｆｆｉ量％含むトルエン溶液０．５ ｃｃ及びテレ
ピネオール０．５ ｃｃを混合したものである。The paste used was a mixture of 2 g of the metal component, 0.5 cc of a toluene solution containing 30ffi of PMMA, and 0.5 cc of terpineol.
比較例として、雰囲気ガスのみを、実験隘１〜５につい
てはＮ、（４０）とＨ２（６０）の混合ガスに、また実
験隘６〜８についてはＮｚ（１００）にそれぞれ変えた
場合を示した。As a comparative example, the case where only the atmospheric gas was changed to a mixed gas of N, (40) and H2 (60) for experimental positions 1 to 5, and to Nz (100) for experimental positions 6 to 8 is shown. Ta.
以下余白
破断面を観察したところ、本発明例の全ては基板内部で
おきていたが、比較例はメタライズ層と窒化アルミニウ
ム基板の界面でおきていた。When the margin fracture surface was observed below, it was found that in all of the examples of the present invention, the fracture occurred inside the substrate, but in the comparative example, the fracture occurred at the interface between the metallized layer and the aluminum nitride substrate.
実施例２
実験１１ｈ２及び実験隘４において、さらに金属成分と
して、ＮｂをＭｏとＭｎの合計量に対して２重量％配合
したペーストを用いたところ、密着強度は、それぞれ４
．７ ｋｇ、 ４．２ ｋｇとなった。Example 2 In Experiment 11h2 and Experiment No. 4, when a paste containing 2% by weight of Nb as a metal component based on the total amount of Mo and Mn was used, the adhesion strength was 4.
．． 7 kg, 4.2 kg.
（発明の効果）
本発明によれば、窒化アルミニウム基板に、十分に高い
密着強度をもったメタライズ層を形成させることができ
、しかもそのメタライズ層は十分に緻密化される。(Effects of the Invention) According to the present invention, a metallized layer having sufficiently high adhesion strength can be formed on an aluminum nitride substrate, and the metallized layer can be sufficiently densified.
Claims (1)
布した後、一酸化炭素及び／又は二酸化炭素を含む雰囲
気中で焼成することを特徴とするメタライズ層をもった
窒化アルミニウム基板の製法。1. A method for producing an aluminum nitride substrate with a metallized layer, which comprises applying a paste containing a base metal to an aluminum nitride substrate and then firing it in an atmosphere containing carbon monoxide and/or carbon dioxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21057286A JPS6369786A (en) | 1986-09-09 | 1986-09-09 | Manufacture of aluminum nitride base sheet with metallized layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21057286A JPS6369786A (en) | 1986-09-09 | 1986-09-09 | Manufacture of aluminum nitride base sheet with metallized layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6369786A true JPS6369786A (en) | 1988-03-29 |
Family
ID=16591536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21057286A Pending JPS6369786A (en) | 1986-09-09 | 1986-09-09 | Manufacture of aluminum nitride base sheet with metallized layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6369786A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63134586A (en) * | 1986-11-20 | 1988-06-07 | 株式会社トクヤマ | Manufacture of sintered body |
| JPH02197189A (en) * | 1988-11-14 | 1990-08-03 | Shinko Electric Ind Co Ltd | Aluminum nitride circuit board and manufacture thereof |
| JPH02277282A (en) * | 1989-02-03 | 1990-11-13 | Boc Group Inc:The | Manufacture of thick film electronic component on hybrid circuit board |
| JPH04238875A (en) * | 1990-04-12 | 1992-08-26 | E I Du Pont De Nemours & Co | Method for brazing metalized constitutional element on ceramic base sheet |
-
1986
- 1986-09-09 JP JP21057286A patent/JPS6369786A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63134586A (en) * | 1986-11-20 | 1988-06-07 | 株式会社トクヤマ | Manufacture of sintered body |
| JPH02197189A (en) * | 1988-11-14 | 1990-08-03 | Shinko Electric Ind Co Ltd | Aluminum nitride circuit board and manufacture thereof |
| JPH02277282A (en) * | 1989-02-03 | 1990-11-13 | Boc Group Inc:The | Manufacture of thick film electronic component on hybrid circuit board |
| JPH04238875A (en) * | 1990-04-12 | 1992-08-26 | E I Du Pont De Nemours & Co | Method for brazing metalized constitutional element on ceramic base sheet |
| JP2602372B2 (en) * | 1990-04-12 | 1997-04-23 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | Method of brazing metallized components to ceramic substrate |
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