JPS6367537A - Semiconductor pressure sensor - Google Patents
Semiconductor pressure sensorInfo
- Publication number
- JPS6367537A JPS6367537A JP61213284A JP21328486A JPS6367537A JP S6367537 A JPS6367537 A JP S6367537A JP 61213284 A JP61213284 A JP 61213284A JP 21328486 A JP21328486 A JP 21328486A JP S6367537 A JPS6367537 A JP S6367537A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- semiconductor pressure
- semiconductor
- covering body
- receiving surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 238000001514 detection method Methods 0.000 claims abstract description 10
- 239000011347 resin Substances 0.000 claims abstract description 7
- 229920005989 resin Polymers 0.000 claims abstract description 7
- 239000012530 fluid Substances 0.000 abstract description 8
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 239000007788 liquid Substances 0.000 abstract description 3
- 239000002356 single layer Substances 0.000 abstract description 2
- 239000004020 conductor Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 3
- 230000001902 propagating effect Effects 0.000 description 3
- 239000013013 elastic material Substances 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体のピエゾ抵抗効果を利用する半導体圧
力センサに関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a semiconductor pressure sensor that utilizes the piezoresistive effect of semiconductors.
従来の技術
流体の圧力を検出するための半導体圧力センサにおいて
は、圧力検出素子およびその入出力端子を流体から隔絶
しておかなければならない（たとえば株式会社日刊工業
新聞社発行「電子技術」１９８６年３月号第５１頁〜第
５２頁）。Conventional technology In a semiconductor pressure sensor for detecting the pressure of a fluid, the pressure detection element and its input/output terminals must be isolated from the fluid (for example, "Electronic Technology" published by Nikkan Kogyo Shimbun Co., Ltd., 1986). (March issue, pages 51-52).
以下に、従来の圧力センサの一例について、第２図を用
いて説明する。An example of a conventional pressure sensor will be described below with reference to FIG. 2.
この圧力センサにおいては、拡散抵抗体が作り込まれ、
ダイヤフラム構造に形成されたシリコンからなる半導体
圧力検出素子１が、その受圧面２がコツプ状の基台３の
開口部へ向くように、基台３の底部に配置されている。In this pressure sensor, a diffusion resistor is built in,
A semiconductor pressure sensing element 1 made of silicon and formed into a diaphragm structure is arranged at the bottom of a base 3 such that its pressure receiving surface 2 faces the opening of the base 3.
基台３には、半導体圧力検出素子１が流体の圧力によっ
て発生する電気信号を外部へ導き出すための端子となる
ステム４．５がそれぞれ絶縁体６，７を介して貫通保持
されており、これらのステム４，５の基台１内の端部と
半導体圧力検出素子１の電極面（図示せず）とは導電線
８，９によって電気的に接続されている。Stems 4.5, which serve as terminals for the semiconductor pressure detection element 1 to lead externally the electrical signals generated by the pressure of the fluid, are held through the base 3 via insulators 6 and 7, respectively. The ends of the stems 4 and 5 inside the base 1 and the electrode surfaces (not shown) of the semiconductor pressure sensing element 1 are electrically connected by conductive wires 8 and 9.
そして、基台３には、半導体圧力検出素子１゜ステム４
，５および導電線８，９をそれぞれ絶縁保護する、たと
えばシリコーンオイルなどのゲル状樹脂からなる圧力伝
搬体１０が充填され、この圧力伝搬体１０をたとえばシ
リコーンゴムなどからなる樹脂の被覆体１１が覆ってい
る。The base 3 has a semiconductor pressure sensing element 1° stem 4.
. covered.
上述した半導体圧力センサに、流体の圧力が矢印Ａ方向
へ加わり、この圧力が、被覆体１１および圧力伝搬体１
０を介して半導体圧力検出素子１に伝達される。半導体
圧力検出素子１は、印加された圧力を電気信号に変換し
、ステム４，５間にそれを発生する。Fluid pressure is applied to the semiconductor pressure sensor described above in the direction of arrow A, and this pressure is applied to the covering body 11 and the pressure propagating body 1.
0 to the semiconductor pressure sensing element 1. The semiconductor pressure sensing element 1 converts the applied pressure into an electrical signal and generates it between the stems 4 and 5.
発明が解決しようとする問題点
この半導体装置では、被覆体１１は半導体圧力検出素子
１などを流体から保護するものであるため、シリコーン
ゴムなどの軟弾性材料で構成されており、また、圧力伝
搬体１０が半導体圧力検出素子への圧力伝搬をできるだ
け阻害しないように、たとえばシリコーンオイルなどゲ
ル状の樹脂で構成されている。これら圧力伝搬体１０お
よび被覆体１１の二重の樹脂構造となっているため、構
造が複雑となり、その生産性があまりよ（ない。また、
半導体圧力検出素子１への圧力伝搬は、この圧力は圧力
伝搬体１０および被覆体１１を介して行われるため、こ
れらの厚み分だけ圧力の伝達損が生じて正確な測定がむ
ずかしいという問題を有していた。Problems to be Solved by the Invention In this semiconductor device, the covering 11 is made of a soft elastic material such as silicone rubber to protect the semiconductor pressure sensing element 1 etc. from fluid, and is also made of a soft elastic material such as silicone rubber. The body 10 is made of gel-like resin, such as silicone oil, so as not to obstruct pressure propagation to the semiconductor pressure detection element as much as possible. Since the pressure propagating body 10 and the covering body 11 have a double resin structure, the structure is complicated and the productivity is not very good.
Since the pressure is transmitted to the semiconductor pressure sensing element 1 via the pressure propagating body 10 and the covering body 11, pressure transmission loss occurs due to the thickness of these elements, making accurate measurement difficult. Was.
本発明は上記従来の問題点を解決し、生産性に優れ、実
用的にも十分な性能を有する半導体圧力センサを提供し
ようとするものである。The present invention aims to solve the above-mentioned conventional problems and provide a semiconductor pressure sensor having excellent productivity and sufficient performance for practical use.
問題点を解決するための手段
本発明の圧力センサは、被覆体の、半導体圧力検出素子
の受圧面上における部分に凹部を設け、その厚みを薄（
、した単層構造としている。Means for Solving the Problems In the pressure sensor of the present invention, a recess is provided in the portion of the covering on the pressure-receiving surface of the semiconductor pressure sensing element, and the thickness thereof is reduced (
It has a single layer structure.
作用
この構成によって、半導体圧力検出素子の受圧面近傍の
被覆が薄いので、圧力が少ない損失でこの素子に伝達さ
れる。また、一つの被覆体で覆われるので、構造も非常
に簡単化なものとなる。Effect With this configuration, since the coating near the pressure receiving surface of the semiconductor pressure sensing element is thin, pressure is transmitted to the element with little loss. Furthermore, since it is covered with one covering, the structure is also extremely simplified.
実施例
以下本発明の一実施例について図面を参照しながら説明
する。EXAMPLE An example of the present invention will be described below with reference to the drawings.
第１図は本発明の一実施例の断面図である。なお、上記
従来例の構成要素と対応する要素には、同じ符号を付し
ている。FIG. 1 is a sectional view of an embodiment of the present invention. Note that elements corresponding to those of the conventional example described above are given the same reference numerals.
図に示すように、ダイヤフラム型半導体圧力検出素子１
はコツプ状の基台３の底部に配置され、ステム４，５の
端部と導電線４で接続されている。そして、基台３内の
半導体圧力検出素子１゜ステム４，５および導電線４を
保護するように、これらを被覆体１２で覆っている。こ
の被覆体１２は反応硬化特性を有する樹脂を基台３に充
填し、被覆するとともに、半導体圧力検出素子１直上に
凹部１３が設けられてその受圧面２上の部分が薄く形成
されている。As shown in the figure, a diaphragm type semiconductor pressure sensing element 1
is arranged at the bottom of the pot-shaped base 3 and connected to the ends of the stems 4 and 5 by conductive wires 4. The semiconductor pressure sensing element 1 degree stems 4 and 5 and the conductive wire 4 in the base 3 are covered with a covering 12 so as to protect them. This covering 12 fills and covers the base 3 with a resin having reactive hardening properties, and also has a recess 13 provided just above the semiconductor pressure sensing element 1 and a thin portion on the pressure receiving surface 2.
本実施例において、たとえば液体による矢印Ａ方向の圧
力を増加させて行くと、被覆体１２を介して圧力が半導
体圧力検出素子１に伝達されるウ一般に樹脂の圧力伝達
損失は、被覆体１２を構成する樹脂の厚さをｔ、その硬
さをｔ、受圧面の面積をＳとすると、ｔｘｋ／で表わさ
れる。被覆体の、半導体圧力検出素子１の受圧面２上の
部分が薄ければ薄いほど、それによる圧力伝達損が少な
くなり、流体の圧力をより正確に検知することができる
。In this embodiment, for example, as the pressure of the liquid in the direction of arrow A is increased, the pressure is transmitted to the semiconductor pressure detection element 1 via the covering 12.Generally, the pressure transmission loss of resin Letting t be the thickness of the constituent resin, t be its hardness, and S be the area of the pressure-receiving surface, it is expressed as txk/. The thinner the portion of the covering on the pressure-receiving surface 2 of the semiconductor pressure sensing element 1 is, the smaller the pressure transmission loss will be, and the pressure of the fluid can be detected more accurately.
なお、本実施例ではダイヤフラム型圧力センサについて
述べたが、それに限らず他の半導体圧力センサにも本考
案を適用できることはいうまでもないことである。In this embodiment, a diaphragm pressure sensor has been described, but it goes without saying that the present invention is not limited to this and can be applied to other semiconductor pressure sensors.
発明の効果
本発明によれば、半導体圧力検出素子をその受圧面直上
の部分に凹部が形成された被覆体で覆っているので、流
体の圧力を精度よく測定することができ、また防水性の
よい半導体圧力センサを得ることができる。さらに、被
覆体の構造が簡単化されているため、部品点数も少なく
てすみ、生産性が向上し、低価格、高信頼性の半導体圧
力センサを実現することができる。Effects of the Invention According to the present invention, since the semiconductor pressure detection element is covered with a covering in which a recess is formed in the portion directly above the pressure receiving surface, the pressure of the fluid can be measured with high accuracy, and the pressure sensing element is waterproof. A good semiconductor pressure sensor can be obtained. Furthermore, since the structure of the covering is simplified, the number of parts can be reduced, productivity can be improved, and a low-cost, highly reliable semiconductor pressure sensor can be realized.
第１図は本発明の一実施例の半導体圧力センサの断面図
、第２図は従来の半導体圧力センサの一例の断面図であ
る。
１・・・・・・半導体圧力検出素子、２・・・・・・受
圧面、３・・・・・・基台、４，５・・・・・・ステム
、８，９・・・・・・導電線、１２・・・・・・被覆体
、１３・・・・・・凹部。
代理人の氏名 弁理士 中尾敏男 ほか１名１−−一手
４り叡ＩＥカオ爽出」（−トＺ−４圧 分
３−１台
４．５−−−ス テ ム
１３−凹 都
第２図FIG. 1 is a sectional view of a semiconductor pressure sensor according to an embodiment of the present invention, and FIG. 2 is a sectional view of an example of a conventional semiconductor pressure sensor. 1... Semiconductor pressure detection element, 2... Pressure receiving surface, 3... Base, 4, 5... Stem, 8, 9... ... Conductive wire, 12 ... Covering body, 13 ... Concave portion. Name of agent: Patent attorney Toshio Nakao and one other person figure
Claims (2)
、前記半導体圧力検出素子を外部へ電気的に導出するた
めの端子と、前記端子および前記半導体圧力検出素子を
接続する導電線と、前記半導体圧力検出素子および前記
導電線を収納し、かつ前記ステムが支持されているコッ
プ状の基台と、少なくとも前記半導体圧力検出素子およ
び前記導電線を被覆するとともに、前記半導体圧力検出
素子の受圧面直上の部分に凹部が形成されている被覆体
とを備えていることを特徴とする半導体圧力センサ。(1) a semiconductor pressure detection element that converts pressure into an electrical signal, a terminal for electrically leading out the semiconductor pressure detection element to the outside, a conductive wire that connects the terminal and the semiconductor pressure detection element; a cup-shaped base that accommodates the semiconductor pressure sensing element and the conductive wire and supports the stem; a pressure receiving surface of the semiconductor pressure sensing element that covers at least the semiconductor pressure sensing element and the conductive wire; A semiconductor pressure sensor comprising: a covering body having a recessed portion formed directly above the covering body.
いることを特徴とする特許請求の範囲第１項に記載の半
導体圧力センサ。(2) The semiconductor pressure sensor according to claim 1, wherein the covering is made of a resin having reactive hardening properties.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61213284A JPS6367537A (en) | 1986-09-10 | 1986-09-10 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61213284A JPS6367537A (en) | 1986-09-10 | 1986-09-10 | Semiconductor pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6367537A true JPS6367537A (en) | 1988-03-26 |
Family
ID=16636561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61213284A Pending JPS6367537A (en) | 1986-09-10 | 1986-09-10 | Semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6367537A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014085299A (en) * | 2012-10-26 | 2014-05-12 | Denso Corp | Pressure sensor device and method of manufacturing the same |
| JP2014085206A (en) * | 2012-10-23 | 2014-05-12 | Denso Corp | Pressure sensor device and method of manufacturing the same |
| JP2014174121A (en) * | 2013-03-12 | 2014-09-22 | Denso Corp | Pressure sensor |
-
1986
- 1986-09-10 JP JP61213284A patent/JPS6367537A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014085206A (en) * | 2012-10-23 | 2014-05-12 | Denso Corp | Pressure sensor device and method of manufacturing the same |
| JP2014085299A (en) * | 2012-10-26 | 2014-05-12 | Denso Corp | Pressure sensor device and method of manufacturing the same |
| JP2014174121A (en) * | 2013-03-12 | 2014-09-22 | Denso Corp | Pressure sensor |
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