JPS6357400A - Research work chamber of oatm or less - Google Patents

Research work chamber of oatm or less

Info

Publication number
JPS6357400A
JPS6357400A JP61201962A JP20196286A JPS6357400A JP S6357400 A JPS6357400 A JP S6357400A JP 61201962 A JP61201962 A JP 61201962A JP 20196286 A JP20196286 A JP 20196286A JP S6357400 A JPS6357400 A JP S6357400A
Authority
JP
Japan
Prior art keywords
oatm
less
work chamber
research work
note
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61201962A
Other languages
Japanese (ja)
Inventor
森 徳太郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP61201962A priority Critical patent/JPS6357400A/en
Publication of JPS6357400A publication Critical patent/JPS6357400A/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 人の命は、何物にも替えられない、尊いものである。こ
とに、着眼点を当てての上記の発明に至ったのである。
[Detailed Description of the Invention] Human life is precious and cannot be replaced with anything. In particular, the above invention was achieved by focusing on this point.

それと上記2が、これに加つまず。And 2 above adds to this.

【図面の簡単な説明】[Brief explanation of drawings]

第一図以下は、事業によって、形態、構造等違うと思い
ますので略します。(注1寸法、形態、構造等自由) 1 安全弁を取付けること。(注、OATM)1 安全
点検は、確実に。 1 マイナスメーター取付けること。 1 人、出は、救命マスクにて行う。ホース(吸出)2
本取付けること。(注、1名当り。)1 装置内へ気密
箱を設置し、移動可能のこととし、空気吸、出klすこ
と。(注、バルブ等を付はパイプ配管のこと。外気は、
漏湯すること。) 1 入室の時、マスク、ホースを確実に取付けること。 (注、外気室にて)服装は、宇宙肌着す。 1 外気室(、に3−C■)ドアは、開放になるためO
ATMにすること。作業終了には、ドア締め後外気を入
れ、マスクとはずすこと。 143−4ドア内へ気密箱(注、内は2つに区切る。) 1  、%4ドアまでとす。このドアは作業開放になる
。 1 各界は、気密のこと。 1 気密小窓を造ること。 1 装置外へのポンプは、真空ポンプ使用の事。 2基以上。 1 構造は、0気圧以下に耐えられる構造とする。 1 コンプレッサー必要。(注、漏逸装置付)1 装置
は、錆びない金属とする。SUSオーステナイト系等。 1 アンカーは、確実に適当なものでとること。 1 合図等正確に。(注、シグナル) 1 各種筒数等は、自由に検討の上取付けること。 1 但し、この発明は安全な物を造る事に限る。 1 同様な全装置に使用する。 以上
The figures below are omitted as the form and structure will vary depending on the business. (Note 1: Dimensions, form, structure, etc. are free) 1. Install a safety valve. (Note, OATM) 1. Be sure to conduct safety inspections. 1. Install a minus meter. 1 Person will exit wearing a life mask. Hose (suction) 2
Installing this book. (Note: per person.) 1. Install an airtight box inside the equipment, make it movable, and let air in and out. (Note: Those with valves, etc. refer to pipe piping.Outside air is
To leak hot water. ) 1. When entering the room, be sure to attach your mask and hose. (Note: In the outdoor air room) Clothes are space underwear. 1 The outside air chamber (, 3-C■) door is open, so O
Make it an ATM. When finished, close the door, let in fresh air, and remove the mask. 143-4 Airtight box into the door (Note: Separate the inside into two.) 1. Up to %4 doors. This door will be open for work. 1 All worlds are airtight. 1. Building an airtight small window. 1 Use a vacuum pump to pump outside the equipment. 2 or more units. 1. The structure shall be able to withstand pressures below 0 atmospheres. 1 Compressor required. (Note: Leakage device included) 1. The device shall be made of rust-free metal. SUS austenite type, etc. 1 Make sure to use a suitable anchor. 1. Signals etc. accurately. (Note, signal) 1. Please consider freely the number of various cylinders, etc. before installing. 1 However, this invention is limited to making safe products. 1 Use for all similar equipment. that's all

Claims (1)

【特許請求の範囲】[Claims] まず、始めに、現在宇宙にて有人ロケットにて、テスト
研究等を行っている方式は、事故の場合危険をともなう
ので、これを地上へ降下した方が、人と経済の両方面か
ら得策と思い、上記名称の装置を発明することに到達し
たものであります。以上を特許請求の範囲とします。
First of all, the current method of conducting test research using manned rockets in space is dangerous in the event of an accident, so it would be better for both people and the economy to descend to the ground. With this in mind, I came up with the invention of the device with the above name. The above is the scope of the patent claims.
JP61201962A 1986-08-27 1986-08-27 Research work chamber of oatm or less Pending JPS6357400A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61201962A JPS6357400A (en) 1986-08-27 1986-08-27 Research work chamber of oatm or less

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61201962A JPS6357400A (en) 1986-08-27 1986-08-27 Research work chamber of oatm or less

Publications (1)

Publication Number Publication Date
JPS6357400A true JPS6357400A (en) 1988-03-12

Family

ID=16449648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61201962A Pending JPS6357400A (en) 1986-08-27 1986-08-27 Research work chamber of oatm or less

Country Status (1)

Country Link
JP (1) JPS6357400A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0337195A (en) * 1989-06-20 1991-02-18 Siemens Ag Production of single-crystalline silicon carbide
US5441011A (en) * 1993-03-16 1995-08-15 Nippon Steel Corporation Sublimation growth of single crystal SiC
US5895526A (en) * 1995-08-07 1999-04-20 Nippondenso Co., Ltd. Process for growing single crystal
US5944890A (en) * 1996-03-29 1999-08-31 Denso Corporation Method of producing single crystals and a seed crystal used in the method
US5958132A (en) * 1991-04-18 1999-09-28 Nippon Steel Corporation SiC single crystal and method for growth thereof
US6110279A (en) * 1996-03-29 2000-08-29 Denso Corporation Method of producing single-crystal silicon carbide

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55136700A (en) * 1979-04-06 1980-10-24 Mitsubishi Electric Corp Space simulation test method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55136700A (en) * 1979-04-06 1980-10-24 Mitsubishi Electric Corp Space simulation test method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0337195A (en) * 1989-06-20 1991-02-18 Siemens Ag Production of single-crystalline silicon carbide
US5958132A (en) * 1991-04-18 1999-09-28 Nippon Steel Corporation SiC single crystal and method for growth thereof
US5441011A (en) * 1993-03-16 1995-08-15 Nippon Steel Corporation Sublimation growth of single crystal SiC
US5895526A (en) * 1995-08-07 1999-04-20 Nippondenso Co., Ltd. Process for growing single crystal
US5944890A (en) * 1996-03-29 1999-08-31 Denso Corporation Method of producing single crystals and a seed crystal used in the method
US6110279A (en) * 1996-03-29 2000-08-29 Denso Corporation Method of producing single-crystal silicon carbide

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