JPS635224Y2 - - Google Patents
Info
- Publication number
- JPS635224Y2 JPS635224Y2 JP1979080485U JP8048579U JPS635224Y2 JP S635224 Y2 JPS635224 Y2 JP S635224Y2 JP 1979080485 U JP1979080485 U JP 1979080485U JP 8048579 U JP8048579 U JP 8048579U JP S635224 Y2 JPS635224 Y2 JP S635224Y2
- Authority
- JP
- Japan
- Prior art keywords
- carrier gas
- raw material
- container
- passage
- saturator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002994 raw material Substances 0.000 claims description 29
- 239000012159 carrier gas Substances 0.000 claims description 25
- 239000007788 liquid Substances 0.000 claims description 14
- 238000005192 partition Methods 0.000 claims description 7
- 238000007599 discharging Methods 0.000 claims 1
- OEYOHULQRFXULB-UHFFFAOYSA-N arsenic trichloride Chemical compound Cl[As](Cl)Cl OEYOHULQRFXULB-UHFFFAOYSA-N 0.000 description 7
- 229920006395 saturated elastomer Polymers 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1979080485U JPS635224Y2 (de) | 1979-06-12 | 1979-06-12 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1979080485U JPS635224Y2 (de) | 1979-06-12 | 1979-06-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55181339U JPS55181339U (de) | 1980-12-26 |
| JPS635224Y2 true JPS635224Y2 (de) | 1988-02-12 |
Family
ID=29313823
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1979080485U Expired JPS635224Y2 (de) | 1979-06-12 | 1979-06-12 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS635224Y2 (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012248803A (ja) * | 2011-05-31 | 2012-12-13 | Hitachi Cable Ltd | 金属塩化物ガスの発生装置および金属塩化物ガスの発生方法、並びに、ハイドライド気相成長装置、窒化物半導体ウエハ、窒化物半導体デバイス、窒化物半導体発光ダイオード用ウエハ、窒化物半導体自立基板の製造方法および窒化物半導体結晶 |
| JP6001129B2 (ja) * | 2015-04-15 | 2016-10-05 | 住友化学株式会社 | ハイドライド気相成長装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS445159Y1 (de) * | 1965-12-06 | 1969-02-25 |
-
1979
- 1979-06-12 JP JP1979080485U patent/JPS635224Y2/ja not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS445159Y1 (de) * | 1965-12-06 | 1969-02-25 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55181339U (de) | 1980-12-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1064287A (en) | Distributor plate for packed towers | |
| JPS635224Y2 (de) | ||
| US3707277A (en) | Combination cross flow and counter flow cooling tower | |
| JPS5834162B2 (ja) | 蒸溜塔 | |
| CS196367B2 (en) | Column with cellular filling | |
| US2064833A (en) | Cooling of liquids | |
| JPS5812827Y2 (ja) | 気相成長用飽和器 | |
| US1333855A (en) | Humidifying apparatus | |
| JPH0499312A (ja) | 有機金属気相成長装置 | |
| JPH086499Y2 (ja) | 液分散器 | |
| JP4130852B2 (ja) | 空気液化分離装置の充填塔に用いられる液体捕集分配装置 | |
| US3394927A (en) | Tray for gas-liquid contact columns | |
| JPS5595085A (en) | Condenser | |
| JPH0390497A (ja) | 浮遊式海洋構造物 | |
| JPS6359762B2 (de) | ||
| FI69924C (fi) | Vaermevaexlare med ett flertal vertikala roer foer uppaotgaoende passage av ett foersta vaermevaexlingsmedium | |
| JPS57198620A (en) | Vapor growth of compound semiconductor | |
| US1165281A (en) | Acid-absorbing apparatus. | |
| JPH0335376Y2 (de) | ||
| SU685300A1 (ru) | Тепломассообменный аппарат | |
| JPS5817666Y2 (ja) | 水浄化器 | |
| JPH073635Y2 (ja) | 気相成長装置 | |
| SU1072879A2 (ru) | Устройство дл формировани пленки жидкости | |
| SU499047A1 (ru) | Емкость дл продувки жидкого металла газом | |
| JPS5759618A (en) | Gas-permeable membrane cell |