JPS6350081A - Manufacture of nonlinear element - Google Patents
Manufacture of nonlinear elementInfo
- Publication number
- JPS6350081A JPS6350081A JP61194635A JP19463586A JPS6350081A JP S6350081 A JPS6350081 A JP S6350081A JP 61194635 A JP61194635 A JP 61194635A JP 19463586 A JP19463586 A JP 19463586A JP S6350081 A JPS6350081 A JP S6350081A
- Authority
- JP
- Japan
- Prior art keywords
- insulator
- nonlinear element
- metal
- nonlinearity
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000012299 nitrogen atmosphere Substances 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 4
- 239000012212 insulator Substances 0.000 claims abstract 3
- 238000010438 heat treatment Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 8
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 4
- 229910052715 tantalum Inorganic materials 0.000 abstract description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 239000010453 quartz Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract description 2
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は金属−絶縁体−金属構造を有する非線形素子（
以下、ＭＩＭ素子と呼ぶ）の製造方法に関する。更に詳
しくは液晶と組み合わせアクティブマトリクスとして用
いられりＭＩＭ素子の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a nonlinear element having a metal-insulator-metal structure (
The present invention relates to a method of manufacturing a MIM element (hereinafter referred to as an MIM element). More specifically, the present invention relates to a method of manufacturing an MIM element that is used as an active matrix in combination with a liquid crystal.
従来ＭＩＭ素子は、その非線形性をあげるためにＩＥＥ
Ｅ Ｔｒａｎｓ、Ｅｌｅｃｔｒｏｎ Ｄｅｖｉｃｅｓ
＋Ｖｏｌ、ＥＤ−２８゜ｐｐ ７Ｓ６−７３９．Ｊｕｎ
ｅ １９８１に示されるようにタンタルに窒素をドープ
するなどの手段を用いていた。Conventional MIM devices have been developed using IEE to improve their nonlinearity.
E Trans, Electron Devices
+Vol, ED-28゜pp 7S6-739. June
e 1981, methods such as doping tantalum with nitrogen were used.
しかし、前述の従来技術で・は窒素を極く微量添加しな
がらタンクルスパッタをしなければならず再現性良く製
造を行なうためには非常に高度な技術を必要とした。However, in the above-mentioned conventional technology, it was necessary to carry out tankle sputtering while adding a very small amount of nitrogen, and very sophisticated technology was required to perform manufacturing with good reproducibility.
本発明はこのような問題点を解決するもので、その目的
は容易な技術で高い非線形性を持ったＭＩＭ素子を得る
ことにある。The present invention is intended to solve these problems, and its purpose is to obtain an MIM element with high nonlinearity using a simple technique.
本発明ではタンタル薄膜を陽極酸化した後、窒素雰囲気
中４００〜６００℃で熱処理を施すことによｐＭＩＭ素
子の非線形性をあげるものである。In the present invention, after anodic oxidation of the tantalum thin film, a heat treatment is performed at 400 to 600° C. in a nitrogen atmosphere to improve the nonlinearity of the pMIM element.
以下、本発明の詳細を実施例に基づいて説明する。 Hereinafter, details of the present invention will be explained based on examples.
第１図は本発明に基づいて製作したＭＩＭ素子の電圧−
電流特性を示したもので（ａ）は窒素雰囲気中での熱処
理無し、（ｂ）は４００℃９０分処理、（Ｃ）は５００
℃３０分処理を施したものである。Figure 1 shows the voltage of the MIM element manufactured based on the present invention.
Current characteristics are shown in (a) without heat treatment in a nitrogen atmosphere, (b) with 400°C treatment for 90 minutes, and (C) with 500°C.
It was treated at ℃ for 30 minutes.
≠７０５９（コーニング社製）ガラス基板にタンタル薄
膜をスパッタした後、０．０５ｗｔ％クエン酸水容液中
で３０Ｖの電圧で陽極酸化する。≠7059 (manufactured by Corning) A thin tantalum film is sputtered onto a glass substrate, and then anodized at a voltage of 30 V in a 0.05 wt % citric acid aqueous solution.
次に、石英管中に入れ窒素を流しながら４００〜６００
℃で熱処理を施す。クロムをスパッタでつけた後、１ｘ
ｙｎｌの面積を持つドツト形状にパターニングする。Next, put it in a quartz tube and heat it for 400 to 600 while flowing nitrogen.
Heat treatment at ℃. After sputtering chrome, 1x
It is patterned into a dot shape having an area of ynl.
このようにして得たＭＩＭ素子の電圧−電流特性と熱処
理条件との関係を第２図〜第４図に示す。The relationship between the voltage-current characteristics of the MIM device thus obtained and the heat treatment conditions are shown in FIGS. 2 to 4.
第２図〜第４図から窒素雰囲気中で熱処理を行なうこと
によって非線形性が上がシ、電気伝導度は下がることが
わかる。同、４００℃よシ低い温度例えば３５０℃程度
で熱処理を行なっても効果は。It can be seen from FIGS. 2 to 4 that by performing heat treatment in a nitrogen atmosphere, the nonlinearity increases and the electrical conductivity decreases. Similarly, even if the heat treatment is performed at a temperature lower than 400°C, for example around 350°C, there is no effect.
得られなかった。又、空気中或は酸素中にて同じように
熱処理を行なったところ第５図に示すように非線形性が
下がシ、電気伝導度は上がった。I couldn't get it. Furthermore, when heat treatment was performed in the same manner in air or oxygen, the nonlinearity decreased and the electrical conductivity increased, as shown in FIG.
以上述べたように本発明によればＭＩＭ素子を形成した
後、数十分の熱処理を行なうだけでその非線形性を上げ
ることが出来４００〜６００ライン程度のアクティブマ
トリクスＬＣＤを駆動するに十分な特性を持つＭＩＭ素
子を容易に得ることが出来る。As described above, according to the present invention, after forming an MIM element, it is possible to improve its nonlinearity by simply performing heat treatment for several tens of minutes, and the characteristics are sufficient to drive an active matrix LCD with approximately 400 to 600 lines. It is possible to easily obtain an MIM device having the following properties.
又、処理温度が基板の軟化点に近付いて来ると基板の縮
みや反シが発生する。従って使用する基板とＬＣＤを製
造するのに必要なフォトリソグラフィの精度によって処
理温度の上限が決まシ、例えばパイレックスガラスを基
板として用いた場合には５００〜５５０℃が上限として
考えられる。Furthermore, when the processing temperature approaches the softening point of the substrate, shrinkage and warping of the substrate occur. Therefore, the upper limit of the processing temperature is determined by the substrate used and the precision of photolithography required to manufacture the LCD. For example, when Pyrex glass is used as the substrate, the upper limit is considered to be 500 to 550°C.
第１図は本発明による特性の変化を示す図である。
第２図〜第４図は電圧−電流特性と４５０℃の熱処理条
件との関係を示す図である。
第５図は酸素中にて熱処理を行ったＶ−Ｉ特性を示す図
である。
以上
ぎけ〕
第１図
ｆ？ （ｖ）
第２図
第４図FIG. 1 is a diagram showing changes in characteristics according to the present invention. FIGS. 2 to 4 are diagrams showing the relationship between voltage-current characteristics and heat treatment conditions at 450°C. FIG. 5 is a diagram showing VI characteristics obtained by heat treatment in oxygen. Figure 1 f? (v) Figure 2 Figure 4
Claims (3)
いて絶縁体を形成した後に熱処理を施すことを特徴とす
る非線形素子の製造方法。(1) A method for manufacturing a nonlinear element, which comprises performing heat treatment after forming an insulator in a nonlinear element having a metal-insulator-metal structure.
とする特許請求の範囲第一項に記載の非線形素子の製造
方法。(2) The method for manufacturing a nonlinear element according to claim 1, characterized in that heat treatment is performed at a temperature of 400 to 600°C.
請求の範囲第一項に記載の非線形素子の製造方法。(3) A method for manufacturing a nonlinear element according to claim 1, characterized in that heat treatment is performed in a nitrogen atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61194635A JP2579468B2 (en) | 1986-08-20 | 1986-08-20 | Manufacturing method of nonlinear element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61194635A JP2579468B2 (en) | 1986-08-20 | 1986-08-20 | Manufacturing method of nonlinear element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6350081A true JPS6350081A (en) | 1988-03-02 |
| JP2579468B2 JP2579468B2 (en) | 1997-02-05 |
Family
ID=16327790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61194635A Expired - Lifetime JP2579468B2 (en) | 1986-08-20 | 1986-08-20 | Manufacturing method of nonlinear element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2579468B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5867234A (en) * | 1995-03-31 | 1999-02-02 | Seiko Epson Corporation | Manufacturing method of mim nonlinear device, mim nonlinear device, and liquid crystal display device |
| US5994748A (en) * | 1995-03-31 | 1999-11-30 | Seiko Epson Corporation | Two-terminal nonlinear device, method for manufacturing the same, and liquid-crystal display panel |
| US8148711B2 (en) | 2007-05-18 | 2012-04-03 | Panasonic Corporation | Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using nonvolatile memory element |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5840527A (en) * | 1981-09-03 | 1983-03-09 | Seiko Epson Corp | Production of substrate for liquid crystal panel |
-
1986
- 1986-08-20 JP JP61194635A patent/JP2579468B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5840527A (en) * | 1981-09-03 | 1983-03-09 | Seiko Epson Corp | Production of substrate for liquid crystal panel |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5867234A (en) * | 1995-03-31 | 1999-02-02 | Seiko Epson Corporation | Manufacturing method of mim nonlinear device, mim nonlinear device, and liquid crystal display device |
| US5994748A (en) * | 1995-03-31 | 1999-11-30 | Seiko Epson Corporation | Two-terminal nonlinear device, method for manufacturing the same, and liquid-crystal display panel |
| US8148711B2 (en) | 2007-05-18 | 2012-04-03 | Panasonic Corporation | Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using nonvolatile memory element |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2579468B2 (en) | 1997-02-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR930006981A (en) | Method for manufacturing a photosensitive field effect transistor having Ta205 hydrogen ion sensing film | |
| JPS63178560A (en) | Forming method of thin-film transistor | |
| JPS6350081A (en) | Manufacture of nonlinear element | |
| JPS63166236A (en) | Electronic device | |
| JPS599635A (en) | Electrooptic device | |
| JP2795883B2 (en) | Nonlinear element in liquid crystal display | |
| JPH0716033B2 (en) | Non-linear resistance element manufacturing method | |
| JPH0348822A (en) | Production of mim type nonlinear switching element | |
| JPH0284775A (en) | Manufacture of vertical thin film transistor | |
| JPS6126071B2 (en) | ||
| JPH0221663A (en) | Manufacture of thin film transistor | |
| JPS61112126A (en) | Liquid crystal display body | |
| JPS62128566A (en) | Manufacture of thin film transistor | |
| KR920006196B1 (en) | Manufacturing method of thin film transistor with ta thin film | |
| JPS6262333A (en) | Production of thin film two-terminal element type active matrix liquid crystal display device | |
| JP3381278B2 (en) | Liquid crystal device manufacturing method, liquid crystal device, laptop personal computer and liquid crystal television equipped with the liquid crystal device | |
| JPH0980486A (en) | Nonlinear resistance element | |
| JPS5838923A (en) | Manufacture of liquid crystal display substrate | |
| JPH0667216A (en) | Nonlinear resistance element and its manufacture | |
| JPH0345932A (en) | Production of active matrix liquid crystal display panel | |
| JPS62164025A (en) | Production of electrooptic device | |
| JPH0326367B2 (en) | ||
| JPH0430004B2 (en) | ||
| JPH06140629A (en) | Manufacture of field-effect transistor | |
| JPS61194424A (en) | Liquid crystal display element for printer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |