JPS6343324A - Plasma shower equipment - Google Patents
Plasma shower equipmentInfo
- Publication number
- JPS6343324A JPS6343324A JP18747386A JP18747386A JPS6343324A JP S6343324 A JPS6343324 A JP S6343324A JP 18747386 A JP18747386 A JP 18747386A JP 18747386 A JP18747386 A JP 18747386A JP S6343324 A JPS6343324 A JP S6343324A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- magnetic field
- chamber
- sample
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims description 6
- 239000010409 thin film Substances 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 20
- 239000010408 film Substances 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 230000005292 diamagnetic effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は、半導体基板の表面に薄膜形成やエツチング
等の処理を行なうプラズマシャワー装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a plasma shower apparatus for performing processes such as forming a thin film and etching on the surface of a semiconductor substrate.
（従来の技術）
従来のプラズマシャワー装置は、第２図に示すように、
プラズマ発生室１内にガス導入系２からガスを導入する
とともに、導波管３からマイクロ波を導入して、電磁コ
イル４による磁界で電子サイクロトロン共鳴（Ｅ ＣＲ
）を行なわせ、プラズマ室ｌ内にプラズマを発生させる
とともに、電磁コイル４の発散磁界を利用して、プラズ
マを引出窓５から試料室６に引出している。そして、引
出したプラズマによって試料台７に載置した基板（ウェ
ハー）８の表面に所定の処理、例えば薄膜の形成をする
ようにしている。(Prior Art) A conventional plasma shower device, as shown in Fig. 2,
Gas is introduced into the plasma generation chamber 1 from the gas introduction system 2, microwaves are introduced from the waveguide 3, and the magnetic field from the electromagnetic coil 4 generates electron cyclotron resonance (ECR).
) to generate plasma in the plasma chamber 1, and at the same time draw out the plasma from the extraction window 5 to the sample chamber 6 using the divergent magnetic field of the electromagnetic coil 4. Then, the drawn plasma is used to perform a predetermined process, for example, to form a thin film, on the surface of the substrate (wafer) 8 placed on the sample stage 7.
上記プラズマシャワー装置は多くの特徴をもっている。The plasma shower device described above has many features.
すなわち、ＥＣＲで活性度が非常に高くなったプラズマ
を、発散磁界を活用して適度に調整されたエネルギーで
取出してウェハー８に衝突させているので、プラズマの
高活性と、イオンや電子のウェハーへの限定された強さ
の衝突とによる複合効果によって効率良くウェハー表面
上に損傷の少ない膜生成などの表面処理反応が生じる。In other words, the plasma, which has become extremely active due to ECR, is taken out with appropriately adjusted energy using a divergent magnetic field and collided with the wafer 8, so that the plasma is highly active and the ions and electrons are The combined effect of the collision with the limited strength of the wafer efficiently causes a surface treatment reaction such as the formation of a film with little damage on the wafer surface.
この反応は外部から加熱しなくとも起きるから、常温で
処理が可能で、しかも窒化シリコン、酸化シリコンなど
の生成された各種薄膜は、常温加工にもかかわらず、耐
酸性、緻密性に優れている。This reaction occurs without external heating, so it can be processed at room temperature, and the various thin films produced from silicon nitride, silicon oxide, etc. have excellent acid resistance and density even when processed at room temperature. .
（本発明が解決しようとする問題点）
しかしながら、膜厚の分布や膜質の分布など基板上の処
理の分布に関しては必ずしも十分でない面があり、特に
ウェハー８の面積が大きくなるとこの傾向が顕著であっ
た。その理由を以下に説明する。(Problems to be Solved by the Present Invention) However, there are some aspects in which the distribution of processing on the substrate, such as the distribution of film thickness and the distribution of film quality, is not always sufficient, and this tendency is particularly noticeable when the area of the wafer 8 becomes large. there were. The reason for this will be explained below.
前記電磁コイル４による磁界は、プラズマ発生室ｌ内で
ＥＣＲ条件を満たすだけでなく、試料室６内に有用な発
散磁界を形成する。（第３図参照）。第３図すの実！Ｂ
ｐは、第３図ａのプラズマ流の中央のＰ線に沿った各位
置における磁界の強さを示し、破線Ｂｑはプラズマ流の
外側の線Ｑに沿った各位置の磁界の強さを示す。The magnetic field generated by the electromagnetic coil 4 not only satisfies the ECR conditions within the plasma generation chamber 1, but also forms a useful divergent magnetic field within the sample chamber 6. (See Figure 3). Figure 3 Sunomi! B
p indicates the strength of the magnetic field at each position along the line P in the center of the plasma flow in Figure 3a, and the broken line Bq indicates the strength of the magnetic field at each position along the line Q outside the plasma flow. .
このような発散磁界では、プラズマ中の円運動電子は反
磁性を示すため、磁界の強さの勾配によって磁界の発散
方向である試料台７に向かって加速される。プラズマ発
生室１と試料台７は電気的に絶縁されており、試料台７
方向に加速された電子は、中和条件を満たすようにイオ
ンを加速し、電子を減速するような両極性磁界を発生し
て、平衡状態となる。この状態では電子およびイオンは
同じ加速状態となるため、
Ｆｉ／Ｍ＝Ｆｅ／ｍ
ただし、Ｆｉ、 Ｆｅ： イオンおよび電子に働く力、
Ｍ、ｍ：イオンおよび電子の質量である。In such a diverging magnetic field, circularly moving electrons in the plasma exhibit diamagnetic properties and are therefore accelerated toward the sample stage 7, which is the direction of divergence of the magnetic field, due to the gradient of the magnetic field strength. The plasma generation chamber 1 and the sample stage 7 are electrically insulated, and the sample stage 7
The electrons accelerated in the direction generate a bipolar magnetic field that accelerates the ions so as to satisfy the neutralization condition and decelerates the electrons, resulting in an equilibrium state. In this state, electrons and ions are in the same accelerated state, so Fi/M=Fe/m where Fi, Fe: Force acting on ions and electrons,
M, m: Mass of ions and electrons.
Ｆｉ＝ｅＥ Ｅ：プラズマ流中に発生した電界。Fi=eE E: Electric field generated in the plasma flow.
Ｆｅ＝−ｐ−（ｄＢ／ｄｚ）−ｅＥ
用は円運動電子の磁気モーメントであ、す、電子の円運
動エネルギーをω】 としてＷ＝ωｒ／Ｂであり、断熱
不変量である。Ｚは流出方向の距離。Fe=-p-(dB/dz)-eE is the magnetic moment of a circularly moving electron. Letting the circularly moving energy of the electron be ω], W=ωr/B, which is an adiabatic invariant. Z is the distance in the outflow direction.
これらの関係からＥを求め、Ｅ＝＝−ｄφ／ｄｚを積分
すると、電位φは、
φ＝ −［（１）Ｏ／（ｅ （１＋ ｍ／ Ｍ））１
（１−Ｂ／ Ｂｖ）”Ｆ （ωｏ ／ｅ） （１
−（Ｂ／Ｂｏ ） ’ｔとなり、イオンエネルギーは、
ｅφ＝−ωｏｉｌ−（Ｂ／Ｂｏ）） ・・・（１）
で与えられる。（参考文献。ＳＥＭＩ ＴＥＣＨＮＯＬ
ＯＧＹＳＹＭＰＯＳＩＵＭ ’８５ 、 Ｆ −４−
１） 、 ココテωｏ、ＢＯはプラズマ発生室ｌでの電
子の円運動エネルギーおよび磁束密度である。If we calculate E from these relationships and integrate E==-dφ/dz, the potential φ becomes φ=-[(1)O/(e(1+m/M))1
(1-B/ Bv)”F (ωo /e) (1
-(B/Bo)'t, and the ion energy is eφ=-ωoil-(B/Bo))...(1)
is given by (References. SEMI TECHNOL
OGYSYMPOSIUM '85, F -4-
1) , ωo, BO are the circular kinetic energy and magnetic flux density of electrons in the plasma generation chamber l.
またこの式（１）は試料台７におけるプラズマの衝突エ
ネルギーを示すものである。すなわち、プラズマ発生室
１から引き出されたプラズマは式（１）によって与えら
れたエネルギーでウェハー８に衝突する。そしてこの衝
突エネルギーが膜生成などの処理のエネルギーとなる。Further, this equation (1) indicates the collision energy of plasma on the sample stage 7. That is, the plasma extracted from the plasma generation chamber 1 collides with the wafer 8 with energy given by equation (1). This collision energy becomes the energy for processes such as film formation.
したがってウェハー８上の処理の分布を均一にするには
、プラズマの衝突エネルギーがウェハー８の面上で一定
でなければならず、このためには、電荷ｅが定数である
から、上記の電位φが試料台７の面上で一定でなければ
ならない、また試料台７の面上の電位φが一定であるた
めには、電磁コイル４によって発生する磁界強度Ｂｏは
一定でプラズマ室１におけるωＧは一定の分布をするか
ら、試料台７の面上の磁界の強さＢが一定でなければな
らない。Therefore, in order to make the distribution of processing on the wafer 8 uniform, the collision energy of the plasma must be constant on the surface of the wafer 8, and for this purpose, since the charge e is a constant, the above potential φ must be constant on the surface of the sample stage 7, and in order for the potential φ on the surface of the sample stage 7 to be constant, the magnetic field strength Bo generated by the electromagnetic coil 4 is constant, and ωG in the plasma chamber 1 is Since the distribution is constant, the strength B of the magnetic field on the surface of the sample stage 7 must be constant.
しかし、第３図に示すように、Ｐ、Ｑ線に沿った磁界強
度に差があり、ウェハー８上の中心位置０と端部ｑとで
は磁界強度が異なる。However, as shown in FIG. 3, there is a difference in the magnetic field strength along the P and Q lines, and the magnetic field strength is different between the center position 0 and the end q on the wafer 8.
第４図に、第３図のＰ線に沿って引出窓５から、試料台
７に至る間の電位を測定した例を示す。第３、第４図か
ら明らかなように、磁界の減少に対応して負電位が増加
しており、試料台７の中心位置Ｏでは一１３Ｖ程度であ
った。一方、試料台７の端部ｑ（第３図参照）の位置の
電位を測定したところ、試料台７の中心位置Ｏよりも磁
界が弱いので、−１３Ｖよりも低い一１８Ｖであった。FIG. 4 shows an example in which the potential was measured along line P in FIG. 3 from the drawer window 5 to the sample stage 7. As is clear from FIGS. 3 and 4, the negative potential increased in response to the decrease in the magnetic field, and was about -13 V at the center position O of the sample stage 7. On the other hand, when the potential at the end q (see FIG. 3) of the sample stage 7 was measured, it was found to be -18V, which is lower than -13V since the magnetic field is weaker than at the center position O of the sample stage 7.
従来は上記のように、試料台７の中心位置０と端部ｑと
で、電位の差や磁界強度の差があるため、ウェハー８の
表面におけるプラズマの入射速度やプラズマ密度に差を
生じ、これら両者の差による相乗作用によってウェハー
８の表面処理に大きな差を生じさせていた。すなわちウ
ェハーに形成される薄膜の膜厚分布や膜質分布を不均一
なものにしてしまい、特に、ウェハーの径が大きいと、
ウェハーの中心位置から離れるほど磁界が弱くなり、ま
た電位差も大きくなるところから、膜厚分布壱１ｆ！２
質分布が一層不均一になってしまうという欠点があった
。Conventionally, as described above, there is a difference in potential and magnetic field strength between the center position 0 and the end q of the sample stage 7, which causes a difference in the plasma incident velocity and plasma density on the surface of the wafer 8. The synergistic effect of these two differences causes a large difference in the surface treatment of the wafer 8. In other words, the film thickness distribution and film quality distribution of the thin film formed on the wafer become non-uniform, especially when the diameter of the wafer is large.
The further away from the center of the wafer, the weaker the magnetic field and the larger the potential difference, so the film thickness distribution 1f! 2
The disadvantage was that the quality distribution became even more uneven.
このため、従来の装置では、実用的な薄膜の生成できる
ウェハー８の最大径はほぼ１００＋＋ｍが限度であり、
これ以上の径の大きいウェハー８を処理するには、プラ
ズマ発生室ｌやＥＣＲ条件を得るための電磁コイルを大
きくしなければならず、装置全体が大きくなりすぎてし
まうという問題があった。For this reason, with conventional equipment, the maximum diameter of the wafer 8 that can produce a practical thin film is limited to approximately 100++ m.
In order to process a wafer 8 with a larger diameter than this, the plasma generation chamber 1 and the electromagnetic coil for obtaining ECR conditions must be made larger, resulting in a problem that the entire apparatus becomes too large.
この発明は、試料台の磁界を均一にして、大口径のウェ
ハーを均一に処理することのできるプラズマシャワー装
置を提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a plasma shower apparatus that can uniformly process large-diameter wafers by uniformizing the magnetic field of a sample stage.
（問題を解決するための手段）
この発明は、上記の目的を達成するために、プラズマ発
生室で電子サイクロトロン共鳴によって発生したプラズ
マを、発散磁界によって試料室に引出し、この引出した
プラズマで試料室の試料台に載置された試料基板の表面
を処理するプラズマシャワー装置において、基板上の磁
界強度を均一にする磁界強度均一化手段を設けたもので
ある。(Means for Solving the Problem) In order to achieve the above object, the present invention extracts plasma generated by electron cyclotron resonance in a plasma generation chamber into a sample chamber using a divergent magnetic field, and uses the drawn plasma to generate a sample chamber. A plasma shower apparatus for treating the surface of a sample substrate placed on a sample stage is provided with a magnetic field strength equalizing means for making the magnetic field strength on the substrate uniform.
（本発明の作用）
磁界強度均一化手段によって、試料基板上の磁界強度が
均一になる。(Action of the present invention) The magnetic field strength equalizing means makes the magnetic field strength on the sample substrate uniform.
（本発明の効果）
試料基板上の磁界強度が均一になるので、試料基板にプ
ラズマが均一のエネルギーで入射する。(Effects of the Invention) Since the magnetic field strength on the sample substrate becomes uniform, plasma is incident on the sample substrate with uniform energy.
これにより、装着を大きくせずに大口径の試料基板を均
一に処理することができる。Thereby, a large-diameter sample substrate can be uniformly processed without increasing the mounting size.
（本発明の実施例）
第１図において、１１はプラズマ室で、ガス導入系１２
から例えばＮ２ガス等を導入し、また導波管１３からマ
イクロ波を導入してプラズマを発生させる。１７は磁気
コイルで、プラズマ室１１における電子サイクロトロン
共鳴に利用するとともに、プラズマ引出窓１８から試料
台１４に向けて適当な勾配で磁界強度を減少する発散磁
界を例えば矢印Ｈ１方向に形成している。そしてこの発
散磁界によって、プラズマ室１１で発生したプラズマを
プラズマ引出窓工８から試料室２０に流すようにしてい
る。前記試料台１４は基板１５を保持するとともに、そ
の径が、試料台１４におけるプラズマ流ＩＢの径より大
きく形成されている。(Embodiment of the present invention) In FIG. 1, 11 is a plasma chamber, and a gas introduction system 12
For example, N2 gas or the like is introduced from the waveguide 13, and microwaves are introduced from the waveguide 13 to generate plasma. A magnetic coil 17 is used for electron cyclotron resonance in the plasma chamber 11, and forms a diverging magnetic field that reduces the magnetic field strength at an appropriate gradient from the plasma extraction window 18 toward the sample stage 14, for example, in the direction of arrow H1. . This divergent magnetic field causes the plasma generated in the plasma chamber 11 to flow from the plasma extraction window 8 into the sample chamber 20. The sample stage 14 holds the substrate 15 and has a diameter larger than the diameter of the plasma flow IB on the sample stage 14.
２１は試料台１４の面上における発散磁界の磁界強度を
、広範囲に亘って均一にする磁界強度均一化手段で、電
磁コイルから構成されている。Reference numeral 21 denotes a magnetic field strength equalizing means for uniformizing the magnetic field strength of the divergent magnetic field on the surface of the sample stage 14 over a wide range, and is composed of an electromagnetic coil.
この電磁コイル２１は、発散磁界が例えば矢印Ｈ１方向
のとき、磁界を矢印Ｈ２方向に発生するようにしである
。この磁界Ｈ２が、試料台１４の中心位置における発散
磁界の磁界強度を大きく弱め、−七の中心位置から遠ざ
かるにしたがって小さく弱めていき、試料台１４の面上
における発散磁界の磁界強度を広範囲に亘って均一にす
るものである。This electromagnetic coil 21 is designed to generate a magnetic field in the direction of arrow H2 when the divergent magnetic field is in the direction of arrow H1, for example. This magnetic field H2 greatly weakens the magnetic field strength of the divergent magnetic field at the center position of the sample stage 14, and gradually weakens as it moves away from the center position of -7, thereby widening the field strength of the divergent magnetic field on the surface of the sample stage 14. This is to make it uniform throughout.
いま、例えばＮ２ガスをガス導入径１２からプラズマ室
１１に導入し、ざらに導波管１３からマイクロ波を導入
するとともに磁気コイル１７によって磁界を発生させて
プラズマ室１１にプラズマを発生させる。そして磁気コ
イル１７によって形成される発散磁界によって、プラズ
マ室１１のプラズマが引出窓１８から引き出されて、試
料台１４に向かって流れ、試料台１４に入射する。Now, for example, N2 gas is introduced into the plasma chamber 11 through the gas introduction diameter 12, microwaves are roughly introduced through the waveguide 13, and a magnetic field is generated by the magnetic coil 17 to generate plasma in the plasma chamber 11. Then, the plasma in the plasma chamber 11 is drawn out from the extraction window 18 by the diverging magnetic field formed by the magnetic coil 17, flows toward the sample stage 14, and enters the sample stage 14.
一方、電磁コイル２１による磁界Ｈ２によって、試料台
１４の面上における発散磁界の磁界強度が広範囲に亘っ
て均一に形成され、またこの均一な磁界によって試料台
１４の面上の電位も広範囲に亘って均一になる。これら
により、ウェハー１５の面に入射するプラズマ流の密度
およびその入射エネルギーも広範囲に亘って均一になる
。On the other hand, due to the magnetic field H2 generated by the electromagnetic coil 21, the magnetic field strength of the diverging magnetic field on the surface of the sample stage 14 is formed uniformly over a wide range, and due to this uniform magnetic field, the potential on the surface of the sample stage 14 is also formed over a wide range. and become uniform. Due to these, the density of the plasma flow incident on the surface of the wafer 15 and its incident energy are also made uniform over a wide range.
したがって、大口径のウェハーに均一な膜厚および膜質
の薄膜を形成することができる。Therefore, a thin film with uniform thickness and quality can be formed on a large diameter wafer.
実験によれば、ウェハー１５に形成される薄膜の膜厚の
分布が±５％であったものが、電磁コイル２１に流す電
流値を適当にすることによって、±２．５％にまで向上
させることができた。膜質もまた同様に均一になること
が解った。According to experiments, the thickness distribution of the thin film formed on the wafer 15 was ±5%, but by adjusting the current value flowing through the electromagnetic coil 21 appropriately, it was improved to ±2.5%. I was able to do that. It was found that the film quality was also uniform.
なお、電磁コイル２１は例えば破線２５で示す位置など
に、極性を適当にして、また必要のときは複数個設置し
て、試料台１４の面上の磁界を均一にしてもよい、なお
電磁コイル２１の設置位置や数は図示のものに限定され
るものではない。In addition, the electromagnetic coil 21 may be installed, for example, at the position indicated by the broken line 25, with appropriate polarity, and if necessary, a plurality of electromagnetic coils may be installed to uniformize the magnetic field on the surface of the sample stage 14. The installation position and number of 21 are not limited to those shown in the drawings.
上記実施例では薄膜生成について説明したが、同様な原
理を利用したエツチング等にも適用できることは勿論で
ある。Although the above embodiment describes thin film formation, it is of course applicable to etching and the like using the same principle.
第１図は実施例のプラズマシャワー装置の構成図、第２
図は従来のプラズマシャワー装置の説明図、第３図はプ
ラズマ発生室および試料室の各位置における磁界強度を
示した説明図、第４図は引出窓と試料台との間の位置の
電位を測定したグラフである。
１１・・・プラズマ室、１４・・・試料台、１５・・・
基板、２０・・・試料室、２１・・・電磁コイル。Figure 1 is a configuration diagram of the plasma shower device of the embodiment, Figure 2
The figure is an explanatory diagram of a conventional plasma shower device, Figure 3 is an explanatory diagram showing the magnetic field strength at each position in the plasma generation chamber and sample chamber, and Figure 4 is an explanatory diagram showing the potential at the position between the drawer window and the sample stage. This is a measured graph. 11... Plasma chamber, 14... Sample stage, 15...
Substrate, 20...sample chamber, 21...electromagnetic coil.
Claims (1)
したプラズマを、発散磁界によって試料室に引出し、こ
の引出したプラズマを用いて試料室の試料台に載置され
た基板の表面を処理するプラズマシャワー装置において
、該基板上の磁界強度を均一にする磁界強度均一化手段
を設けたことを特徴とするプラズマシャワー装置。In a plasma shower apparatus, plasma generated by electron cyclotron resonance in a plasma generation chamber is drawn into a sample chamber by a divergent magnetic field, and the drawn plasma is used to process the surface of a substrate placed on a sample stage in the sample chamber. A plasma shower apparatus characterized by being provided with a magnetic field strength equalizing means for uniformizing the magnetic field strength on a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18747386A JPS6343324A (en) | 1986-08-09 | 1986-08-09 | Plasma shower equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18747386A JPS6343324A (en) | 1986-08-09 | 1986-08-09 | Plasma shower equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6343324A true JPS6343324A (en) | 1988-02-24 |
Family
ID=16206695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18747386A Pending JPS6343324A (en) | 1986-08-09 | 1986-08-09 | Plasma shower equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6343324A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6436769A (en) * | 1987-04-27 | 1989-02-07 | Semiconductor Energy Lab | Plasma treatment device |
| US5139552A (en) * | 1989-12-05 | 1992-08-18 | Nippon Sheet Glass Co., Ltd. | Apparatus for bending and tempering sheet glass |
| US5181986A (en) * | 1990-04-02 | 1993-01-26 | Fuji Electric Co., Ltd. | Plasma processing apparatus |
| US6376388B1 (en) * | 1993-07-16 | 2002-04-23 | Fujitsu Limited | Dry etching with reduced damage to MOS device |
| US8163129B2 (en) | 2007-10-02 | 2012-04-24 | Semes Co., Ltd. | Method and apparatus for cleaning a substrate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56155535A (en) * | 1980-05-02 | 1981-12-01 | Nippon Telegr & Teleph Corp <Ntt> | Film forming device utilizing plasma |
| JPS5779621A (en) * | 1980-11-05 | 1982-05-18 | Mitsubishi Electric Corp | Plasma processing device |
| JPS61267324A (en) * | 1985-05-21 | 1986-11-26 | Fuji Electric Co Ltd | Dry thin film processing device |
-
1986
- 1986-08-09 JP JP18747386A patent/JPS6343324A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56155535A (en) * | 1980-05-02 | 1981-12-01 | Nippon Telegr & Teleph Corp <Ntt> | Film forming device utilizing plasma |
| JPS5779621A (en) * | 1980-11-05 | 1982-05-18 | Mitsubishi Electric Corp | Plasma processing device |
| JPS61267324A (en) * | 1985-05-21 | 1986-11-26 | Fuji Electric Co Ltd | Dry thin film processing device |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6436769A (en) * | 1987-04-27 | 1989-02-07 | Semiconductor Energy Lab | Plasma treatment device |
| US5858259A (en) * | 1987-04-27 | 1999-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing apparatus and method |
| US6217661B1 (en) | 1987-04-27 | 2001-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing apparatus and method |
| US6423383B1 (en) | 1987-04-27 | 2002-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing apparatus and method |
| US6838126B2 (en) | 1987-04-27 | 2005-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming I-carbon film |
| US5139552A (en) * | 1989-12-05 | 1992-08-18 | Nippon Sheet Glass Co., Ltd. | Apparatus for bending and tempering sheet glass |
| US5181986A (en) * | 1990-04-02 | 1993-01-26 | Fuji Electric Co., Ltd. | Plasma processing apparatus |
| US6376388B1 (en) * | 1993-07-16 | 2002-04-23 | Fujitsu Limited | Dry etching with reduced damage to MOS device |
| US6884670B2 (en) | 1993-07-16 | 2005-04-26 | Fujitsu Limited | Dry etching with reduced damage to MOS device |
| US8163129B2 (en) | 2007-10-02 | 2012-04-24 | Semes Co., Ltd. | Method and apparatus for cleaning a substrate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7491649B2 (en) | Plasma processing apparatus | |
| US5435886A (en) | Method of plasma etching | |
| KR20130139982A (en) | Apparatus for forming a magnetic field and methods of use thereof | |
| KR20080010061A (en) | Plasma based ion implantation apparatus | |
| JP2004200169A (en) | Electromagnetic induction accelerator | |
| JPS6343324A (en) | Plasma shower equipment | |
| JPH088235B2 (en) | Plasma reactor | |
| JPH04237123A (en) | Plasma processor | |
| JPS63172429A (en) | Microwave plasma treating apparatus | |
| JPH04343420A (en) | Plasma reaction device | |
| JP3172788B2 (en) | Neutral particle processing method and device | |
| JPH076998A (en) | Microwave plasma processing equipment | |
| JP3406322B2 (en) | ECR type plasma processing equipment | |
| JPH01107539A (en) | Microwave plasma processor | |
| JPS63299338A (en) | Plasma treatment equipment | |
| JPH0415921A (en) | Method and apparatus for activating plasma | |
| JP2634910B2 (en) | Microwave plasma processing equipment | |
| JPH0717147Y2 (en) | Plasma processing device | |
| JPH02156526A (en) | Microwave plasma treating system | |
| JPH04107919A (en) | Plasma processor provided with magnetic field and absorbing microwave | |
| JP2700890B2 (en) | Plasma processing equipment | |
| JPH04136180A (en) | Microwave absorption plasma treating device having magnetic field | |
| JP3016940B2 (en) | Electron beam excitation type plasma processing equipment | |
| JP2514328B2 (en) | Semiconductor manufacturing equipment | |
| JPH0799160A (en) | Method and apparatus for working of neutral particles |