JPS6337507A - Dielectric ceramics - Google Patents
Dielectric ceramicsInfo
- Publication number
- JPS6337507A JPS6337507A JP61178823A JP17882386A JPS6337507A JP S6337507 A JPS6337507 A JP S6337507A JP 61178823 A JP61178823 A JP 61178823A JP 17882386 A JP17882386 A JP 17882386A JP S6337507 A JPS6337507 A JP S6337507A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- load
- porcelain
- dielectric ceramics
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 title description 11
- 229910052573 porcelain Inorganic materials 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 8
- 239000000843 powder Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 229910000480 nickel oxide Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910000484 niobium oxide Inorganic materials 0.000 description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は誘電体磁器に関し、特に、高周波領域において
、高い無負荷Ｑを有する高周波用として好適である誘電
体磁器に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to dielectric ceramics, and particularly to dielectric ceramics suitable for high frequency applications having a high no-load Q in a high frequency region.
一般に、マイクロ波やミリ波などの高周波領域の信号回
路に使用される誘電体共振器や誘電体基板には、高い誘
電率および高い無負荷Ｑを有し、しかも共振周波数の温
度係数の絶対値が小さい誘電体磁器を用いることが望ま
れている。従来、この種の誘電体磁器として、Ｔｉｅ、
系の材料がよく利用され、例えば、ＢａＯ−ＴｉＯ２系
、ＺｒＯ，−５ｎＯｚ−ＴｉＯ，系の材料、最近では、
Ｂａ（Ｚｎ、Ｔａ）０３系、Ｂａ（Ｍｇ、Ｔａ）Ｏｚ系
の材料等がある。これらの材料からなる誘電体磁器は、
１０ＧＨｚ程度の高周波数において無負荷Ｑが３０００
〜７０００、誘電率が２０〜４０、共振周波数の温度係
数がＯｐｐｍ／’Ｃ近傍という特性を有している。In general, dielectric resonators and dielectric substrates used in signal circuits in high frequency ranges such as microwaves and millimeter waves have a high dielectric constant and a high no-load Q, as well as the absolute value of the temperature coefficient of the resonant frequency. It is desired to use dielectric porcelain with a small resistance. Conventionally, as this type of dielectric porcelain, Tie,
For example, BaO-TiO2-based, ZrO, -5nOz-TiO-based materials, and recently,
Examples include Ba(Zn, Ta)03-based materials, Ba(Mg, Ta)Oz-based materials, and the like. Dielectric porcelain made of these materials is
No-load Q is 3000 at high frequency of about 10GHz
7,000, a dielectric constant of 20 to 40, and a temperature coefficient of resonance frequency near Oppm/'C.
ところで、近年、通信機器に使用される周波数の高周波
化が進み、衛星放送等に使われるＳＨＦ帯においてもこ
れまでより一層高い無負荷Ｑを有する誘電体磁器が求め
られている。Incidentally, in recent years, the frequencies used in communication equipment have become higher and higher, and dielectric ceramics having a higher no-load Q than before are required even in the SHF band used for satellite broadcasting and the like.
そこで、本発明の目的は、一層高い無負荷Ｑを示す新規
な系の誘電体磁器を提供することにある。Therefore, an object of the present invention is to provide a novel type of dielectric ceramic exhibiting an even higher no-load Q.
ｃ問題点を解決するための手段〕
すなわち、本発明は、前記問題点を解決するものとして
、
一般式（【）：
Ｂａ（Ｍｇ＋−ｘＮｉｘ）＋−ｙ（Ｎｂ＋−ｘＴａｘ）
ｙ Ｏｚ＋＋３７ｚ＋ｙ −（１）〔式中、Ｘおよびｙ
は、それぞれ、０．０４≦Ｘ≦０．９０，０．６１≦ｙ
≦０．７２で表わされる数である。〕
で表わされる組成を有する誘電体磁器を提供するもので
ある。Means for Solving Problem c] That is, the present invention solves the above problem by using the general formula ([): Ba(Mg+-xNix)+-y(Nb+-xTax)
y Oz++37z+y −(1) [wherein, X and y
are 0.04≦X≦0.90, 0.61≦y, respectively
This is a number expressed as ≦0.72. ] Provided is a dielectric ceramic having a composition represented by the following.
本発明の誘電体磁器は、かかる成分組成により、高い誘
電率と温度依存性の少ない共振周波数を有する上に、高
周波領域において更に増大した無負荷Ｑを有する磁器が
得られることを見出したものである。The dielectric porcelain of the present invention has been found to have a high dielectric constant and a resonant frequency with little temperature dependence, as well as a porcelain having an even higher no-load Q in the high frequency region, due to such a component composition. be.
すなわち、一般式（１）において、Ｘの範囲は０．０４
≦Ｘ≦０．９０である。ｙの範囲については、０．６１
≦ｙ≦０．７２であり、好ましくは０．６６≦ｙ≦０．
６８である。Ｘが０．９０を超えると無負荷Ｑは低下し
、Ｘが０．０４未満かｙが０．７２を超えると無負荷Ｑ
が低下すると共に、共振周波数の温度係数が正に大きく
なり過ぎる。また、ｙが０．６１未満になると焼結が困
難となる。That is, in general formula (1), the range of X is 0.04
≦X≦0.90. For the range of y, 0.61
≦y≦0.72, preferably 0.66≦y≦0.
It is 68. When X exceeds 0.90, no-load Q decreases, and when X is less than 0.04 or y exceeds 0.72, no-load Q decreases.
decreases, and the temperature coefficient of the resonant frequency becomes too positive. Furthermore, when y is less than 0.61, sintering becomes difficult.
本発明の誘電体磁器の製法については、特に制限はなく
、通常の方法により製造することができる。例えばＢａ
、 Ｍｇ＋ Ｎｉ、 ＴａおよびＮｂ成分の原料として
、それぞれ、炭酸バリウム、酸化マグネシウム、酸化ニ
ッケル、酸化タンタルおよび酸化ニオブの粉末をそれぞ
れ所望組成の磁器が得られるような割合で秤量し、それ
らを十分に混合する。There are no particular restrictions on the method of manufacturing the dielectric ceramic of the present invention, and it can be manufactured by a conventional method. For example, Ba
As raw materials for the , Mg+Ni, Ta, and Nb components, barium carbonate, magnesium oxide, nickel oxide, tantalum oxide, and niobium oxide powders were weighed in proportions such that porcelain with the desired composition could be obtained, and the powders were sufficiently mixed. Mix.
その混合物を仮焼に供した後、粉砕し、加圧成形する。After the mixture is calcined, it is pulverized and press-molded.
得られた成形体を１５００〜１６５０℃程度で焼成する
ことにより本発明の誘電体磁器を製造することができる
。The dielectric ceramic of the present invention can be manufactured by firing the obtained molded body at about 1500 to 1650°C.
以下、本発明を実施例および比較例により詳細に説明す
る。Hereinafter, the present invention will be explained in detail with reference to Examples and Comparative Examples.
原料として、それぞれ純度９９．９モル％の炭酸バリウ
ム、酸化マグネシウム、酸化ニッケル、酸化タンタルお
よび酸化ニオブの粉末を用意し、これら原料粉末を一般
式（１）におけるＸおよびｙの値が第１表に示す９種の
試料（＊印を付した試料は比較例、他は実施例）のそれ
となるように各試料番号ごとにそれぞれ秤量し、純水と
共にボールミルのポットに入れ、１６時時間式混合した
。As raw materials, powders of barium carbonate, magnesium oxide, nickel oxide, tantalum oxide, and niobium oxide, each with a purity of 99.9 mol%, were prepared, and the values of X and y in general formula (1) of these raw powders were as shown in Table 1. Weigh each sample number to match those of the nine types of samples shown in (*marked samples are comparative examples, others are examples), put them in a ball mill pot with pure water, and mix for 16 hours. did.
この混合物をポットから取り出し、１５０℃で５時間乾
燥した後、空気中において１０００℃で２時間仮焼した
。仮焼後、粉砕し、４２メツシユの篩を通して整粒した
。得られた粉末を金型を用いて圧力５００ｋｇ／ｃｎｌ
で直径１０ｕ＋、厚さ約５１ｍの円板状に一次成形した
後、圧力２０００ｋｇ／ ｃｒＡでラバープレスにて圧
縮し、成形体とした。この成形体を酸素気流中、１６５
０℃で４時間焼成して磁器を得た。This mixture was taken out of the pot, dried at 150°C for 5 hours, and then calcined in air at 1000°C for 2 hours. After calcining, it was crushed and sized through a 42-mesh sieve. The obtained powder was heated to a pressure of 500 kg/cnl using a mold.
After primary molding into a disc shape with a diameter of 10 u+ and a thickness of about 51 m, it was compressed with a rubber press at a pressure of 2000 kg/crA to obtain a molded body. This molded body was placed in an oxygen stream for 165 minutes.
Porcelain was obtained by firing at 0° C. for 4 hours.
得られた磁器の誘電率（εｒ）および無負荷Ｑ（Ｑｕ）
を誘電体円柱共振器法により約１０Ｇｌｌｚの周波数に
おいて測定した。また、−１０℃から８０℃の温度範囲
における共振周波数を測定し、２０℃における共振周波
数の温度係数（τｆ）を算出した。得られた結果を第１
表に示す。Dielectric constant (εr) and unloaded Q (Qu) of the obtained porcelain
was measured at a frequency of about 10 Gllz by the dielectric cylindrical resonator method. Further, the resonant frequency in the temperature range from -10°C to 80°C was measured, and the temperature coefficient (τf) of the resonant frequency at 20°C was calculated. The obtained results are the first
Shown in the table.
第 １ 表
（注）＊印は比較例であることを示す。その他の試料は
実施例である。Table 1 (Note) * indicates a comparative example. The other samples are examples.
第１表より、本発明の実施例である試料番号３〜８の誘
電体磁器は、７，０００以上の大きい無負荷Ｑを有して
いることがわかる。From Table 1, it can be seen that the dielectric ceramics of sample numbers 3 to 8, which are examples of the present invention, have a large no-load Q of 7,000 or more.
本発明の誘電体磁器は、１０ＧＨｚ付近の高周波領域に
おいても無負荷Ｑが７．０００以上という非常に高い値
を有しており、最近の使用周波数の高周波化の要請に応
え得るものである。The dielectric ceramic of the present invention has a very high no-load Q of 7.000 or more even in a high frequency region around 10 GHz, and can meet the recent demand for higher frequencies.
しかも、共振周波数の温度係数の絶対値も小さく、誘電
率においても高い値を有しており１．高周波用の誘電体
共振器や誘電体基板等に使用される誘電体磁器として極
めて有用なものである。Moreover, the absolute value of the temperature coefficient of the resonance frequency is small, and the dielectric constant has a high value.1. It is extremely useful as a dielectric ceramic used for high frequency dielectric resonators, dielectric substrates, etc.
Claims (1)
＿１＿−＿ｘＴａ＿ｘ）＿ｙＯ＿２＿＋＿（＿３＿／＿
２＿）＿ｙ〔式中、ｘおよびｙは、それぞれ、０．０４
≦ｘ≦０．９０、０．６１≦ｙ≦０．７２で表わされる
数である。〕 で表わされる組成を有する誘電体磁器。[Claims] General formula: Ba(Mg_1_-_xNi_x)_1_-_y(Nb
_1_-_xTa_x)_yO_2_+_(_3_/_
2_)_y [where x and y are each 0.04
It is a number expressed by ≦x≦0.90, 0.61≦y≦0.72. ] Dielectric porcelain having a composition represented by:
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61178823A JPS6337507A (en) | 1986-07-31 | 1986-07-31 | Dielectric ceramics |
| CA000540834A CA1296177C (en) | 1986-07-09 | 1987-06-29 | Dielectric ceramics |
| EP19870305786 EP0252668B1 (en) | 1986-02-21 | 1987-06-30 | Dielectric ceramics |
| DE8787305786T DE3776437D1 (en) | 1986-07-09 | 1987-06-30 | DIELECTRIC CERAMICS. |
| US07/240,448 US4830995A (en) | 1986-07-09 | 1988-09-02 | Dielectric ceramics |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61178823A JPS6337507A (en) | 1986-07-31 | 1986-07-31 | Dielectric ceramics |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6337507A true JPS6337507A (en) | 1988-02-18 |
| JPH0550083B2 JPH0550083B2 (en) | 1993-07-28 |
Family
ID=16055284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61178823A Granted JPS6337507A (en) | 1986-02-21 | 1986-07-31 | Dielectric ceramics |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6337507A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02225367A (en) * | 1988-11-16 | 1990-09-07 | Sumitomo Metal Mining Co Ltd | Production of dielectric ceramics |
| JPH035357A (en) * | 1989-05-30 | 1991-01-11 | Sumitomo Metal Mining Co Ltd | Dielectric ceramic and its production |
-
1986
- 1986-07-31 JP JP61178823A patent/JPS6337507A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02225367A (en) * | 1988-11-16 | 1990-09-07 | Sumitomo Metal Mining Co Ltd | Production of dielectric ceramics |
| JPH035357A (en) * | 1989-05-30 | 1991-01-11 | Sumitomo Metal Mining Co Ltd | Dielectric ceramic and its production |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0550083B2 (en) | 1993-07-28 |
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