JPS6335770A - Packing plate for sputtering target - Google Patents

Packing plate for sputtering target

Info

Publication number
JPS6335770A
JPS6335770A JP17798186A JP17798186A JPS6335770A JP S6335770 A JPS6335770 A JP S6335770A JP 17798186 A JP17798186 A JP 17798186A JP 17798186 A JP17798186 A JP 17798186A JP S6335770 A JPS6335770 A JP S6335770A
Authority
JP
Japan
Prior art keywords
target
backing plate
packing plate
screws
sputtering target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17798186A
Other languages
Japanese (ja)
Inventor
Toshihiko Yamagishi
山岸　敏彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP17798186A priority Critical patent/JPS6335770A/en
Publication of JPS6335770A publication Critical patent/JPS6335770A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Optical Record Carriers (AREA)

Abstract

PURPOSE:To conveniently and easily exchange a target by forming a packing plate for a sputtering target with two parts, joining the parts with screws, and pouring a metal which is liquid at room temp. into the joint. CONSTITUTION:The target 101 for sputtering is fixed to a first packing plate 103 with a solder 102, the packing plate 103 is joined to a second packing plate 107 by screws 104, and alloy of InGa, etc., which is liquid at room temp. is poured into the joint 105 between both packing plates 103 an 107, the second packing plate 107 is fixed to a cathode main body 109 with screws 106, and a refrigerant such as water is passed through a space 108 formed by the plate 107 and the main body 109. When the target 101 is exchanged, the screws 104 are loosened, and the target is exchanged along with the first packing plate 103. The target on be conveniently and easily exchanged in this way without touching at a the cooling zone 108 in the cathode 109 with the hand.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 スパッタリングターゲット用バッキングプレートの構造
に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to the structure of a backing plate for a sputtering target.

〔従来の技術〕[Conventional technology]

第２図に従来のスパッタリング用ターゲットとバッキン
グプレートが、カソード本体に装着された状態の１例を
示す。第２図においては、ターゲラ）（２ＣＭ）をろう
材（２０２）ｉ介してバッキングプレー）（２０４）に
ボンディングする。FIG. 2 shows an example of a state in which a conventional sputtering target and backing plate are attached to a cathode body. In FIG. 2, a backing plate (204) is bonded to a backing plate (204) through a brazing material (202) i.

バッキングプレートは、ネジ（２０３）等によりカソー
ド本体（２０６）に装置される。バッキングプレート裏
の空間（２０３）には、冷却用媒体が流れておシ、バッ
キングプレートの熱伝導を通じターゲットを冷却する。The backing plate is attached to the cathode body (206) by screws (203) or the like. A cooling medium flows in the space (203) behind the backing plate and cools the target through heat conduction of the backing plate.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかし前述の従来技術では、ターゲット交換時に、バッ
キングプレートがカソード本体から離れるため、冷却用
媒体（多くの場合、水）が真空チャンバー内に対し開放
となる。真空チャンバーにおいては水分は多大な害をな
すために、ターゲット交換時毎には慎重な取り扱いを必
要とし、またバッキングプレートとカソード本体間のシ
ールドを充分施す必要がある。However, in the prior art described above, when the target is replaced, the backing plate separates from the cathode body, so the cooling medium (water in most cases) is exposed to the inside of the vacuum chamber. Moisture is very harmful in a vacuum chamber, so careful handling is required every time the target is replaced, and sufficient shielding between the backing plate and the cathode body is required.

また一般にバッキングプレートには、冷却媒体側から大
気圧がかかりターゲット側は高真空であるためバッキン
グプレートには大気圧に耐えうる強度が必要とされる。Further, generally, the backing plate is subjected to atmospheric pressure from the cooling medium side and the target side is in a high vacuum, so the backing plate is required to have strength that can withstand atmospheric pressure.

そのためバッキングプレートは、厚くなり、ターゲット
と合わせるとかなりの重さを有し、特にターゲットが大
量生産用に大面積となるとその重量より扱いは非常に困
難となる。Therefore, the backing plate becomes thick and has a considerable weight when combined with the target. Especially when the target has a large area for mass production, it becomes very difficult to handle due to its weight.

そこで本発明は、このような問題点を解決するもので、
その目的とするところは、スパッタリングターゲット交
換時の作業が゛簡単となるような、バッキングプレート
を提供するところにある。Therefore, the present invention aims to solve these problems.
The purpose is to provide a backing plate that makes it easier to replace sputtering targets.

〔問題点を解決するだめの手段〕[Failure to solve the problem]

本発明のスパッタリング用バッキングプレートは、 （１）冷却用媒体の接する部分とスパッタリング用ター
ゲットの接する部分の２部分より構成され（２）上記２
部分をネジ等により物理的に接合さく３）上記接合部に
低融点金属の液体を流し込むこと を特徴とする。The backing plate for sputtering of the present invention is composed of two parts: (1) a part in contact with the cooling medium and a part in contact with the sputtering target; (2) the above two parts.
The parts are physically joined by screws or the like. 3) A liquid of a low melting point metal is poured into the joint.

〔作用〕[Effect]

本発明の上記の構成によれば、ターゲット交換時におい
ては、冷却用媒体に接する部分のバッキングプレートを
取シはずす必要はなく、冷却用媒体が真空チャンバー内
に付着する可能性はなく、取り扱いは簡単となる。また
ターゲットと接する部分のバッキングプレートは、大気
圧に耐え得る強度が必要ではなくなるため、重量が軽く
なり取り扱いが簡単となる。According to the above configuration of the present invention, when replacing the target, there is no need to remove the backing plate in contact with the cooling medium, there is no possibility that the cooling medium will adhere to the inside of the vacuum chamber, and handling is easy. It becomes easy. Additionally, the backing plate in contact with the target does not need to be strong enough to withstand atmospheric pressure, making it lighter in weight and easier to handle.

また２部分の接合部は、ネジ止めであるため熱伝導度が
低くなる。従って熱伝導度向上のため接合部に低融点金
属の液体を流し込み、改善を図った。Furthermore, since the joint between the two parts is screwed together, the thermal conductivity is low. Therefore, in order to improve thermal conductivity, a low melting point metal liquid was poured into the joint to improve thermal conductivity.

〔実施例〕〔Example〕

第１図は本実施例におけるスパッタリング用ターゲット
とバッキングプレートがカソード本体に装着された状態
の断面図である。　ターゲット（１０１）は、ろう材（
１０２）を介してターゲットを固定するだめのバッキン
グプレート（１０３）にろう付けされている。バッキン
グプレート（１０３）はネジ（１０４）により、外圧に
耐え、冷媒の熱伝導を行なうバッキングプレート（１０
７）に固定されている。バッキングプレー）（１０３）
と（１０７）の接合部（１０３）には、本実施例におい
ては、室温において液体ＩｎＧａ合金を流し込み、熱伝
導度の向上を図った。バッキングプレー）（１０７）は
、ネジ（１０６）等によりカソード本体（１０９）に装
着される。（１，ｏ　ａ　）には、冷却用媒体が流れて
いる。ターゲット交換時においては、ネジ（１０４）を
はずし、バッキングプレー）（１０３）より上部を交換
する。FIG. 1 is a cross-sectional view of the sputtering target and backing plate attached to the cathode body in this embodiment. The target (101) is a brazing filler metal (
102) to a backing plate (103) that fixes the target. The backing plate (103) is secured by screws (104) to withstand external pressure and conduct heat from the refrigerant.
7) is fixed. backing play) (103)
In this example, a liquid InGa alloy was poured into the joint (103) between and (107) at room temperature to improve the thermal conductivity. The backing plate (107) is attached to the cathode body (109) with screws (106) or the like. A cooling medium is flowing through (1, o a ). When replacing the target, remove the screw (104) and replace the part above the backing plate (103).

本実施例においては、　バッキングプレート（１ｏ７）
とカソード本体（１０９）は、別々である必要はなく、
一体化されていても良い。In this example, backing plate (1o7)
and the cathode body (109) do not need to be separate;
It may be integrated.

〔発明の効果〕〔Effect of the invention〕

以上述べたように発明１によれば、スパッタリングター
ゲット用バッキングプレートを冷却用媒体の接する部分
とスパッタリング用ターゲットの接する部分の２部分よ
シ構成し、それをネジ等にて物理的に接合して、その接
合部に低融点金属の液体を流し込むことにより、ターゲ
ット交換時に、冷却用媒体がチャンバー内に対して開放
しなくなり、かつバッキングプレート付ターゲットの重
さが従来のものより軽くなるため、取り扱いが簡単にな
るという効果を有する。As described above, according to invention 1, the sputtering target backing plate is composed of two parts, the part in contact with the cooling medium and the part in contact with the sputtering target, which are physically joined with screws or the like. By pouring a low-melting metal liquid into the joint, the cooling medium will not be released into the chamber when replacing the target, and the weight of the target with backing plate will be lighter than conventional ones, making it easier to handle. This has the effect of simplifying the process.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明のスパッタリング用ターゲット及びバッ
キングプレートの主要断面図。 第２図は、従来のスパッタリング用ターゲット及びバッ
キングプレートの主要断面図。 以上FIG. 1 is a main sectional view of the sputtering target and backing plate of the present invention. FIG. 2 is a main cross-sectional view of a conventional sputtering target and backing plate. that's all

Claims (3)

【特許請求の範囲】[Claims] （１）冷却用媒体の接する部分とスパッタリング用ター
ゲットの接する部分の、２部分より構成されることを特
徴とするスパッタリングターゲット用バッキングプレー
ト。(1) A backing plate for a sputtering target characterized by being composed of two parts: a part in contact with a cooling medium and a part in contact with a sputtering target. （２）上記２部分をネジ等により物理的に接合させるこ
とを特徴とする特許請求範囲第１項記載のスパッタリン
グターゲット用バッキングプレート。(2) The backing plate for a sputtering target according to claim 1, wherein the two parts are physically joined by screws or the like. （３）上記接合部に低融点金属の液体を流し込むことを
特徴とする特許請求の範囲第１項記載のスパッタリング
ターゲット用バッキングプレート。(3) The backing plate for a sputtering target according to claim 1, wherein a liquid of a low melting point metal is poured into the joint portion.
JP17798186A 1986-07-29 1986-07-29 Packing plate for sputtering target Pending JPS6335770A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17798186A JPS6335770A (en) 1986-07-29 1986-07-29 Packing plate for sputtering target

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17798186A JPS6335770A (en) 1986-07-29 1986-07-29 Packing plate for sputtering target

Publications (1)

Publication Number Publication Date
JPS6335770A true JPS6335770A (en) 1988-02-16

Family

ID=16040449

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17798186A Pending JPS6335770A (en) 1986-07-29 1986-07-29 Packing plate for sputtering target

Country Status (1)

Country Link
JP (1) JPS6335770A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04257630A (en) * 1991-02-06 1992-09-11 Matsushita Electric Ind Co Ltd Water closet unit
JPH04257631A (en) * 1991-02-12 1992-09-11 Matsushita Electric Ind Co Ltd Water closet unit
US5372694A (en) * 1992-12-14 1994-12-13 Leybold Aktiengesellschaft Target for cathode sputtering
US5421978A (en) * 1993-01-21 1995-06-06 Leybold Aktiengesellschaft Target cooling system with trough
US5433835A (en) * 1993-11-24 1995-07-18 Applied Materials, Inc. Sputtering device and target with cover to hold cooling fluid
US6199259B1 (en) 1993-11-24 2001-03-13 Applied Komatsu Technology, Inc. Autoclave bonding of sputtering target assembly
FR2898136A1 (en) * 2006-03-03 2007-09-07 Commissariat Energie Atomique Process for installing and/or deinstalling a hollow/filled magnetic target on a cathode magnetron for cathodic pulverization, comprises generating a permanent magnetic field above the target for controlling a magnetron magnetic field

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04257630A (en) * 1991-02-06 1992-09-11 Matsushita Electric Ind Co Ltd Water closet unit
JPH04257631A (en) * 1991-02-12 1992-09-11 Matsushita Electric Ind Co Ltd Water closet unit
US5372694A (en) * 1992-12-14 1994-12-13 Leybold Aktiengesellschaft Target for cathode sputtering
US5421978A (en) * 1993-01-21 1995-06-06 Leybold Aktiengesellschaft Target cooling system with trough
US5433835A (en) * 1993-11-24 1995-07-18 Applied Materials, Inc. Sputtering device and target with cover to hold cooling fluid
US6199259B1 (en) 1993-11-24 2001-03-13 Applied Komatsu Technology, Inc. Autoclave bonding of sputtering target assembly
FR2898136A1 (en) * 2006-03-03 2007-09-07 Commissariat Energie Atomique Process for installing and/or deinstalling a hollow/filled magnetic target on a cathode magnetron for cathodic pulverization, comprises generating a permanent magnetic field above the target for controlling a magnetron magnetic field

Similar Documents

Publication Publication Date Title
CA2054784A1 (en) Ternary Active Brazing Based on a Zirconium-Nickel Alloy
US4111572A (en) Ceramic-metal assembly
JPS6335770A (en) Packing plate for sputtering target
CN101823188A (en) High-temperature amorphous solder for soldering Si3N4 ceramics
JPH0426549B2 (en)
JP2635362B2 (en) Target unit
JPS63144175A (en) Ceramic to metal joint structure
JPS6054943A (en) Window glass
US2206515A (en) Electric discharge vessel
JPH06293963A (en) Backing plate for ito sputtering target
JPH0538919Y2 (en)
GB1596471A (en) Vacuum switch tubes
JPS63235469A (en) Sputtering device
JPS61288065A (en) Target
Bauer High-Temperature Brazing in Vacuum--a Joining Process With a Future
JPS6258247B2 (en)
JPH066520Y2 (en) Ion laser tube
KR910004036B1 (en) Manufacturing method & structure of valve seat
JPH0469594B2 (en)
JPH069906B2 (en) Composite material consisting of graphite and copper or copper alloy
US2098282A (en) Clad metal body
JP2022539491A (en) Method and laser head for limiting deflection of a laser beam from a laser head during temperature changes
KR200254153Y1 (en) The structure of Air-core Pan
JPH083015Y2 (en) Semiconductor element cooling device
Hegner et al. Apparatus for fabricating a foil