JPS6334927A - Working of diamond - Google Patents
Working of diamondInfo
- Publication number
- JPS6334927A JPS6334927A JP17803886A JP17803886A JPS6334927A JP S6334927 A JPS6334927 A JP S6334927A JP 17803886 A JP17803886 A JP 17803886A JP 17803886 A JP17803886 A JP 17803886A JP S6334927 A JPS6334927 A JP S6334927A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- processing method
- thin film
- plasma
- argon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 43
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 42
- 239000007789 gas Substances 0.000 claims abstract description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000001301 oxygen Substances 0.000 claims abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 3
- 239000007788 liquid Substances 0.000 claims abstract 2
- 238000003672 processing method Methods 0.000 claims description 14
- 238000010884 ion-beam technique Methods 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 239000012263 liquid product Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims 9
- 230000000873 masking effect Effects 0.000 claims 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 10
- 239000012776 electronic material Substances 0.000 abstract description 6
- 229910052786 argon Inorganic materials 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 238000007599 discharging Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 2
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
つ
産業上の利用分野
本発明は、電子材料等に用いるダイヤモンドの加工方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for processing diamond used for electronic materials and the like.
従来の技術
近年、半導体集積回路の基板材料等の電子材料への応用
として、絶゛縁性や熱伝導性に優れたダイヤモンドが注
目されている。BACKGROUND OF THE INVENTION In recent years, diamond, which has excellent insulating properties and thermal conductivity, has attracted attention as an application to electronic materials such as substrate materials for semiconductor integrated circuits.
一方、ダイヤモンドの加工方法は従来、ダイヤモンドに
よる機械的分割や研磨によるものでありた。On the other hand, conventional methods for processing diamond have involved mechanical division and polishing using diamond.
発明が解決しようとする問題点
しかしながら、例えば電子材料への応用としてダイヤモ
ンドトランジスタを形成する場合、ダイヤモンドの加工
には超精密加工が必要であり、従来の機械的研磨法によ
っては満足のいくダイヤモンドの加工が達成され得るも
のではない。Problems to be Solved by the Invention However, when forming diamond transistors for application to electronic materials, for example, ultra-precision processing of diamond is required, and conventional mechanical polishing methods cannot produce satisfactory diamonds. Processing is not something that can be achieved.
本発明は上記問題点に鑑み電子材料等への応用に対して
必要である超精密なダイヤモンドの加工方法を提供する
ものである。In view of the above-mentioned problems, the present invention provides an ultra-precise diamond processing method necessary for application to electronic materials and the like.
問題点を解決するだめの手段
上記問題点を解決するために本発明のダイヤモンドの加
工方法は、炭素と化合して生成物が気体又は液体となる
元素を含むプラズマにさらすものである。Means for Solving the Problems In order to solve the above problems, the diamond processing method of the present invention involves exposing the diamond to plasma containing an element that combines with carbon to form a gas or liquid product.
作用
本発明は上記した構成によってダイヤモンドのプラズマ
にさらされた部分のみが炭素の化合物となって分解する
のでダイヤモンドは超精密に加工されることとなる。Operation According to the present invention, only the portion of the diamond exposed to the plasma decomposes into a carbon compound due to the above-described configuration, so that the diamond can be processed with ultra-precision.
実施例
以下本発明の一実施例であるダイヤモンドの加工方法に
ついて、図面を参照しながら説明する。EXAMPLE Hereinafter, a method for processing diamond, which is an example of the present invention, will be described with reference to the drawings.
実施例１
第１図は第１の実施例を示すダイヤモンドの加工方法を
用いた装置の構成図である。同図において、１は酸素と
アルゴンの体積比を１：１とした混合ガスを注入したケ
ース、２は高周波（１３，５６ＭＨｚ）を発生する電源
、３は電源２の電力を加え、１０ＯＷのグロー放電を行
って作成したグロー放電プラズマ、４はダイヤモンド、
６はダイヤモンド４をマスクする人１２０５膜である。Embodiment 1 FIG. 1 is a block diagram of an apparatus using a diamond processing method showing a first embodiment. In the figure, 1 is a case in which a mixed gas with a volume ratio of oxygen and argon of 1:1 is injected, 2 is a power source that generates high frequency (13,56 MHz), and 3 is a case in which the power of power source 2 is added, and a 10 OW glow is generated. Glow discharge plasma created by performing electric discharge, 4 is diamond,
6 is a film 1205 that masks the diamond 4.
このように構成された装置においてグロー放電プラズマ
３にさらされたダイヤモンド４はｋ１２０３膜５でマス
クされた部分を除き、エツチングされることとなる。In the apparatus constructed as described above, the diamond 4 exposed to the glow discharge plasma 3 is etched except for the portion masked by the K1203 film 5.
なお、マスクには他にＳｉ、Ｚｒの配化物、Ｓｌ。In addition, the mask also contains Si, Zr oxides, and Sl.
Ｔｉ、Ｂの窒化物でもよい。この加工方法によるとダイ
ヤモンドのエツチングの速度は、アルゴンのみの放電ガ
スを用いた場合に比較して１オーダ以上大きくなる。ま
た、同図破線部分のようにダイヤモンド４をエツチング
でき、１μｍ以下の精度でパターン形成をすることがで
きた。Nitride of Ti and B may also be used. According to this processing method, the etching speed of diamond is more than one order of magnitude higher than when a discharge gas of only argon is used. Furthermore, the diamond 4 could be etched as shown by the broken line in the figure, and a pattern could be formed with an accuracy of 1 μm or less.
実施例２
第２図は第２の実施例を示すダイヤモンドの加工方法の
構成図である。同図において、６は酸素とアルゴンの体
積比が１：１のイオンンース、７はイオンンース６から
１０００Ｖで加速されたイオンビーム、８はダイヤモン
ドの表面である。以上の構成により、照射密度をｓｍＡ
／ｃｒ！程度とすると、１μｍ／ｈｏｕｒ以上のダイヤ
モンド４のエッチ速度を得た。また、イオンビームを絞
シスキャンさせることにより、マスクレスでエッチパタ
ーンを形成できた。このときイオンビームのエネルギー
が１０ａＶ以下ではエッチ速度が非常に小さくなるので
、１ｏｅｖ以上のイオンビームを用いることが有効であ
る。Embodiment 2 FIG. 2 is a block diagram of a diamond processing method showing a second embodiment. In the figure, 6 is an ion beam with a volume ratio of oxygen to argon of 1:1, 7 is an ion beam accelerated at 1000 V from the ion source 6, and 8 is the surface of a diamond. With the above configuration, the irradiation density can be set to smA
/cr! An etch rate of diamond 4 of 1 μm/hour or more was obtained. Furthermore, by focusing and scanning the ion beam, it was possible to form an etch pattern without a mask. At this time, if the energy of the ion beam is 10 aV or less, the etch rate becomes very low, so it is effective to use an ion beam of 1 oev or more.
発明の効果
以上のように本発明によるダイヤモンドの加工方法はダ
イヤモンドをプラズマにさらすことにより超精密加工が
可能となシ、これから増々重要となるダイヤモンドの電
子材料への応用に非常に有効である。Effects of the Invention As described above, the method for processing diamond according to the present invention enables ultra-precision processing by exposing diamond to plasma, and is very effective in the application of diamond to electronic materials, which will become increasingly important in the future.
第１図は本発明の第１の実施例におけるダイヤモンドの
加工方法を適用した装置の模式図、第２図は本発明の第
２の実施例におけるダイヤモンドの加工方法を適用した
装置の模式図である。
３・・・・・・グロー放電プラズマ、４・・・・・・ダ
イヤモンド、５・・・・・・ム４２０３膜、７・・・・
・・イオンビーム。FIG. 1 is a schematic diagram of an apparatus to which the diamond processing method according to the first embodiment of the present invention is applied, and FIG. 2 is a schematic diagram of an apparatus to which the diamond processing method according to the second embodiment of the present invention is applied. be. 3...Glow discharge plasma, 4...Diamond, 5...Mu4203 film, 7...
...Ion beam.
Claims (8)
を含むプラズマにダイヤモンドをさらすことを特徴とす
るダイヤモンドの加工方法。(1) A method for processing diamond, which is characterized by exposing diamond to plasma containing an element that combines with carbon to produce a gas or liquid product.
特徴とする特許請求の範囲第１項記載のダイヤモンドの
加工方法。(2) The diamond processing method according to claim 1, wherein the element that generates the gas or liquid is oxygen.
特許請求の範囲第１項または第２項に記載のダイヤモン
ドの加工方法。(3) The diamond processing method according to claim 1 or 2, wherein the plasma is an ion beam.
マスクし、酸素を含むプラズマにさらすことを特徴とす
るダイヤモンドの加工方法。(4) A diamond processing method characterized by masking the diamond with a thin film that is inert to oxygen and exposing it to oxygen-containing plasma.
求の範囲第４項記載のダイヤモンドの加工方法。(5) The diamond processing method according to claim 4, wherein the thin film is an oxide thin film.
ることを特徴とする特許請求の範囲第５項記載のダイヤ
モンドの加工方法。(6) The diamond processing method according to claim 5, wherein the oxide thin film is an oxide thin film of Si, Al, or Zr.
求の範囲第４項記載のダイヤモンドの加工方法。(7) The diamond processing method according to claim 4, wherein the thin film is a nitride thin film.
ことを特徴とする特許請求の範囲第７項記載のダイヤモ
ンドの加工方法。(8) The diamond processing method according to claim 7, wherein the nitride thin film is a nitride thin film of Si, Ti, or B.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17803886A JPS6334927A (en) | 1986-07-29 | 1986-07-29 | Working of diamond |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17803886A JPS6334927A (en) | 1986-07-29 | 1986-07-29 | Working of diamond |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6334927A true JPS6334927A (en) | 1988-02-15 |
Family
ID=16041502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17803886A Pending JPS6334927A (en) | 1986-07-29 | 1986-07-29 | Working of diamond |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6334927A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01198489A (en) * | 1988-02-01 | 1989-08-10 | Semiconductor Energy Lab Co Ltd | Method for etching carbon film |
| JPH01246374A (en) * | 1988-03-26 | 1989-10-02 | Semiconductor Energy Lab Co Ltd | Method for etching carbon film or film composed principally of carbon |
| US6309554B1 (en) | 1998-06-12 | 2001-10-30 | The University Of Tokyo | Method for producing needle diamond-type structure |
| CN1075841C (en) * | 1998-12-17 | 2001-12-05 | 中国科学院上海冶金研究所 | Process for etching diamond film pattern with reactive ion beam |
| US6350389B1 (en) | 1998-06-12 | 2002-02-26 | The University Of Tokyo | Method for producing porous diamond |
| US6358427B1 (en) | 1997-05-23 | 2002-03-19 | Gersan Establishment | Marking diamond |
-
1986
- 1986-07-29 JP JP17803886A patent/JPS6334927A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01198489A (en) * | 1988-02-01 | 1989-08-10 | Semiconductor Energy Lab Co Ltd | Method for etching carbon film |
| JPH01246374A (en) * | 1988-03-26 | 1989-10-02 | Semiconductor Energy Lab Co Ltd | Method for etching carbon film or film composed principally of carbon |
| US6358427B1 (en) | 1997-05-23 | 2002-03-19 | Gersan Establishment | Marking diamond |
| US6309554B1 (en) | 1998-06-12 | 2001-10-30 | The University Of Tokyo | Method for producing needle diamond-type structure |
| US6350389B1 (en) | 1998-06-12 | 2002-02-26 | The University Of Tokyo | Method for producing porous diamond |
| CN1075841C (en) * | 1998-12-17 | 2001-12-05 | 中国科学院上海冶金研究所 | Process for etching diamond film pattern with reactive ion beam |
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