JPS63315589A - Single crystal production apparatus - Google Patents
Single crystal production apparatusInfo
- Publication number
- JPS63315589A JPS63315589A JP14975687A JP14975687A JPS63315589A JP S63315589 A JPS63315589 A JP S63315589A JP 14975687 A JP14975687 A JP 14975687A JP 14975687 A JP14975687 A JP 14975687A JP S63315589 A JPS63315589 A JP S63315589A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- heat
- crucible
- pulling
- shielding member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 9
- 239000010439 graphite Substances 0.000 claims abstract description 9
- 239000010453 quartz Substances 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000000155 melt Substances 0.000 claims description 19
- 239000011810 insulating material Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 239000008710 crystal-8 Substances 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 5
- 238000009413 insulation Methods 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract description 2
- 239000012774 insulation material Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はチョクラルスキー法による単結晶成長装置に関
するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a single crystal growth apparatus using the Czochralski method.
第４図は一般的なチョクラルスキー法（ＣＺ法）による
単結晶製造装置の要部の模式的断面図である。チャンバ
１０内にはその中央部に坩堝１を配設し、この坩堝１の
外側に黒鉛製のヒータ２を、更にその外側に保温壁３を
同心状に配設しである。FIG. 4 is a schematic cross-sectional view of the main parts of a single crystal manufacturing apparatus using the general Czochralski method (CZ method). A crucible 1 is disposed in the center of the chamber 10, a graphite heater 2 is disposed outside the crucible 1, and a heat insulating wall 3 is concentrically disposed outside the crucible 1.
坩堝１はグラファイト製の容器１ａの内側に石英製の容
器１ｂを配した二重構造に構成され、その上底部中央に
はこれを回転、並びに昇降移動させる軸１ｃが連結され
ている。また坩堝１の上方には下端に種結晶６を固定し
た引上軸７が垂直に配設されている。The crucible 1 has a double structure in which a quartz container 1b is arranged inside a graphite container 1a, and a shaft 1c for rotating and moving the crucible up and down is connected to the center of the upper base. Further, above the crucible 1, a pulling shaft 7 having a seed crystal 6 fixed at its lower end is vertically disposed.
而して、このような単結晶製造装置にあっては坩堝１内
に投入した原料をヒータ２により加熱溶融せしめ、その
融液に種結晶６を浸した後、引上軸７にて回転しつつ上
昇させ、種結晶６の下端に単結晶８を成長せしめるよう
になっている。In such a single crystal manufacturing apparatus, the raw material put into the crucible 1 is heated and melted by the heater 2, and after the seed crystal 6 is immersed in the melt, it is rotated by the pulling shaft 7. The single crystal 8 is grown at the lower end of the seed crystal 6.
一般に単結晶の引上げを行う場合、その引上げ速度は、
引上げ方向における単結晶の温度勾配と密接な関係にあ
り、効率的な単結晶の引上げを行うには単結晶に所定以
上の温度勾配を設定する必要がある。Generally, when pulling a single crystal, the pulling speed is
It is closely related to the temperature gradient of the single crystal in the pulling direction, and in order to pull the single crystal efficiently, it is necessary to set a temperature gradient of a predetermined value or higher in the single crystal.
ところで上記した如き装置では単結晶８の周囲には坩堝
１、ヒータ２及び反射率が０．７と極めて高い融液等の
輻射熱源があってこれらから受ける輻射熱量が極めて多
く、必然的に単結晶８の引上方向における温度勾配が小
さくなり、単結晶の引上げ効率が低いという欠点があっ
た。By the way, in the device described above, there are radiant heat sources such as the crucible 1, the heater 2, and the melt with an extremely high reflectance of 0.7 around the single crystal 8, and the amount of radiant heat received from these is extremely large. There was a drawback that the temperature gradient in the pulling direction of the crystal 8 became small, and the single crystal pulling efficiency was low.
この対策として従来にあっては、第５図に示す如く坩堝
１の上方であって単結晶８の引上げ域の周囲に、扁平な
環状リムｌｌａとその内側端縁から坩堝１内の融液上で
あって、単結晶８の引上域の周囲に下方に向かうに従い
縮径されて円錐台形をなすテーパ部１１ｃとからなる輻
射スクリーン１１を配設する構成が提案されている（特
公昭５７−４０１１９号）。As a countermeasure against this, in the past, as shown in FIG. A structure has been proposed in which a radiation screen 11 consisting of a tapered part 11c having a truncated conical shape and whose diameter decreases as it goes downward is disposed around the pulling area of the single crystal 8 (Japanese Patent Publication No. 1983-1999). No. 40119).
この輻射スクリーン１１によって坩堝１、ヒータ２及び
融液等からの輻射熱を遮断し、単結晶８の引上方向にお
ける温度勾配を大きくし、また同時にチャンバ１０の上
方から坩堝１に向けて給送されるＡｒ等のキャリアガス
を坩堝１内に誘導し、坩堝１から生成されるＳｉＯガス
等を坩堝１の周縁部側に導き、坩堝１の下方からチャン
バ１０の外部に排出するようにしである。This radiation screen 11 blocks radiant heat from the crucible 1, the heater 2, the melt, etc., increases the temperature gradient in the pulling direction of the single crystal 8, and at the same time increases the temperature gradient in the pulling direction of the single crystal 8. A carrier gas such as Ar is guided into the crucible 1, and SiO gas etc. generated from the crucible 1 is guided to the periphery of the crucible 1 and discharged from below the crucible 1 to the outside of the chamber 10.
上述した如きＩＪｔ″￥の装置にあってはＳｉＯ等の排
−ｙｉ 、１．： １１ ｊに（ノド出出来、また輻射
スクリーン１１によって坩堝１、ヒータ２、融液等と単
結晶８との間で熱遮蔽されて、これらからの−次輻射熱
は遮断される反面、融液表面から単結晶に向けて放射さ
れる反射熱や輻射スクリーン１１自体が高温に加熱され
た結果、二次輻射熱が単結晶８１こ向けて放射され、単
結晶８自体に対する冷却効果が不足して、デバイスプロ
セス後に結晶欠陥が生じ易いとされている５５０℃〜８
５０°Ｃの温度域を経るのに要する時間が長くなり、結
晶品質の低下が避けられない。In the above-mentioned IJt″\ device, SiO, etc. can be discharged (yi, 1.: 11 On the other hand, as a result of the reflected heat radiated from the melt surface toward the single crystal and the heating of the radiant screen 11 itself to a high temperature, secondary radiant heat is 550°C to 8°C, which is said to be radiated toward the single crystal 81 and lack a cooling effect on the single crystal 8 itself, causing crystal defects after device processing.
The time required to pass through the 50°C temperature range becomes longer, and a decrease in crystal quality is unavoidable.
また輻射スクリーン１１自体は金属で形成されるが、融
液から発生するＳｉＯガス、或いは高温のために溶融劣
化されて寿命が短く、溶融劣化物が坩堝１内の融液中に
落下して融液を汚染し、また落下による衝撃自体によっ
て多結晶化を誘引する等の問題があった。Furthermore, although the radiation screen 11 itself is made of metal, it has a short lifespan due to melting and deterioration due to SiO gas generated from the melt or high temperatures. There were problems such as contaminating the liquid and inducing polycrystallization due to the impact itself caused by dropping.
本発明はかかる事情に鑑みなされたものであって、その
目的とするところは排ガスの排出機能を１員なうことな
くヒータ、坩堝及び融液等からの輻射熱を効果的に遮断
し、単結晶にその引上方向に適当な温度勾配を形成し、
単結晶の引上げ速度を高め得、製造効率の向上を図れる
ようにした単結晶製造装置を提供するにある。The present invention has been made in view of the above circumstances, and its purpose is to effectively block radiant heat from heaters, crucibles, melts, etc. without compromising the exhaust gas discharge function, and to An appropriate temperature gradient is formed in the direction of the pull-up.
An object of the present invention is to provide a single crystal manufacturing apparatus that can increase the pulling speed of a single crystal and improve manufacturing efficiency.
本発明装置にあっては、製造すべき単結晶の原料を加熱
溶融する坩堝と、該坩堝内の融液から単結晶を引上げる
手段と、前記坩堝内の融液の上方であって、単結晶の引
上げ域の周囲に配設された熱遮蔽部材とを備えた単結晶
製造装置において、前記熱遮蔽部材は環状リム部と、該
環状リム部の内側縁から融液面上であって単結晶の引上
げ域の周囲に垂下され、内部に断熱材を有する環状に形
成され、単結晶の引上げ域と対向する内面側は上端側か
ら下端側に向かうに従って縮径された逆円錐台形とした
熱遮蔽体とを具備する。The apparatus of the present invention includes a crucible for heating and melting raw materials for a single crystal to be produced, a means for pulling the single crystal from the melt in the crucible, and a means for pulling the single crystal from the melt in the crucible, and a means for pulling the single crystal from the melt in the crucible. In a single crystal manufacturing apparatus comprising a heat shielding member disposed around a crystal pulling region, the heat shielding member includes an annular rim portion and a portion of the single crystal that is on the melt surface from the inner edge of the annular rim portion. The heat sink is formed into an annular shape that hangs around the crystal pulling area and has a heat insulating material inside, and the inner surface facing the single crystal pulling area is shaped like an inverted truncated cone that decreases in diameter from the upper end to the lower end. and a shield.
これによって輻射熱を遮断し、単結晶の引上方向におけ
る温度勾配を高め得て結晶引上げ速度を高く、またデバ
イスプロセス後の結晶欠陥発生頻度の大きい温度域を短
時間で通過させ得る。This blocks radiant heat, increases the temperature gradient in the pulling direction of the single crystal, increases the crystal pulling rate, and allows the crystal to pass through the temperature range where crystal defects occur frequently after device processing in a short time.
以下本発明をその実施例を示す図面に基づき具体的に説
明する。第１図は本発明に係る単結晶製造装置（以下本
発明装置という）の模式的縦断面図、第２図は熱遮蔽部
材の部分拡大断面図であり、図中１は坩堝、２はヒータ
、３は保温壁、４は熱遮蔽部材、６は種結晶、８は単結
晶、ＩＯはチャンバを示している。チャンバｌＯ内には
その中心部に坩堝１が配設され、その外側にヒータ２が
、更にその外側に保温壁３が同心状に配設され、そして
前記保温壁３の上方から坩堝１内の融液面の周縁部にわ
たってヒータ２、保温壁３、坩堝ｌを覆う態様で熱遮蔽
部材４が配設されている。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below based on drawings showing embodiments thereof. FIG. 1 is a schematic vertical cross-sectional view of a single crystal manufacturing apparatus according to the present invention (hereinafter referred to as the present invention apparatus), and FIG. 2 is a partially enlarged cross-sectional view of a heat shielding member, in which 1 is a crucible and 2 is a heater. , 3 is a heat insulating wall, 4 is a heat shielding member, 6 is a seed crystal, 8 is a single crystal, and IO is a chamber. A crucible 1 is disposed in the center of the chamber IO, a heater 2 is disposed outside the crucible 1, and a heat retaining wall 3 is concentrically disposed outside the crucible 1. A heat shielding member 4 is disposed so as to cover the heater 2, the heat retaining wall 3, and the crucible 1 over the peripheral edge of the melt surface.
坩堝ｌは黒鉛製の容器１ａの内側に石英製の容器１ｂを
配設した二重構造に構成されており、その上底部中央に
は坩堝ｌを回転、並びに昇降させる軸１ｃが連結されて
いる。The crucible 1 has a double structure in which a quartz container 1b is placed inside a graphite container 1a, and a shaft 1c for rotating and raising and lowering the crucible 1 is connected to the center of the upper base. .
また坩堝１の上方には種結晶６及びこれに単結晶８を成
長させつつ引上げる引上軸７が配設されている。熱遮蔽
部材４は厚肉の環状リム部４１の外周縁寄りの下面に支
持筒部４２を設け、また内周縁には断面直角三角形状を
なす環状の熱遮蔽体４３を設けて構成されており、支持
筒部４２を保温壁３上に配した支持板３ａ上面に当接せ
しめることにより熱遮蔽体４３を坩堝ｌ内の融液面上に
吊り下げた状態で臨ませである。Further, above the crucible 1, there is disposed a seed crystal 6 and a pulling shaft 7 for growing a single crystal 8 thereon and pulling it up. The heat shielding member 4 includes a support tube 42 provided on the lower surface of a thick annular rim portion 41 near the outer periphery, and an annular heat shield 43 having a right triangular cross section on the inner periphery. By bringing the support tube 42 into contact with the upper surface of the support plate 3a disposed on the heat retaining wall 3, the heat shield 43 is suspended above the melt surface in the crucible 1.
熱遮蔽体４３は断面り形をなす環状の外側環部４３ａと
逆円錐台形をなす内側環部４３ｂとを内、外に重ね合わ
せて相互の間に断面直角三角形状をなす環状の空間４３
ｃを形成し、この空間４３ｃ内に断熱材４３ｄを密に詰
めて構成してあり、前記外側環部４３ａ。The heat shield 43 has an annular outer annular portion 43a having a cross-sectional shape and an inner annular portion 43b having an inverted truncated conical shape, which are overlapped inside and out, and an annular space 43 having a right triangular cross-section is formed between them.
c, and a heat insulating material 43d is densely packed in this space 43c, and the outer ring portion 43a.
内側環部４３ｂ夫々の上端部外側に張り出したフランジ
部４３ｅ、４３ｆを前記環状リム部４ｉの内側上面に形
成した座部４１ａに係合せしめることにより環状リム部
４１に懸架せしめである。The inner ring part 43b is suspended on the annular rim part 41 by engaging the flanges 43e and 43f projecting outward from the upper end thereof with a seat part 41a formed on the inner upper surface of the annular rim part 4i.
この状態では熱遮蔽体４３における外側環部４３ａの円
筒部分は垂直に坩堝１の周壁内側に沿って融液面直上に
まで垂下され、また水平環縫部は融液面と略平行にその
周縁部近傍から単結晶引上域の近傍にわたって位置して
いる。In this state, the cylindrical portion of the outer ring portion 43a of the heat shield 43 hangs vertically along the inner side of the peripheral wall of the crucible 1 to just above the melt surface, and the horizontal chain stitch portion extends approximately parallel to the melt surface at its peripheral edge. It is located from the vicinity to the vicinity of the single crystal pulling area.
外側環部４３ａ、内側環部４３ｂはいずれも高密度の黒
鉛製であり、また断熱材４３ｄとしては耐熱性に優れ、
しかも熱伝導率の低い材料、例えば黒鉛フェルト、石英
フェルト等が用いられる。ちなみに黒鉛フェルトは熱伝
導率が０．２ｋｃａ ｌ ７ｍ−ｈｒ・℃であり、熱伝
導率が１００ｋｃａ ｌ ／ｍ −ｈｒ −’ｃの黒鉛
の５００倍以上の断熱性を備えている。Both the outer ring part 43a and the inner ring part 43b are made of high-density graphite, and the heat insulating material 43d has excellent heat resistance.
Moreover, materials with low thermal conductivity, such as graphite felt and quartz felt, are used. Incidentally, graphite felt has a thermal conductivity of 0.2 kcal/m-hr-'C, which is 500 times more thermally insulating than graphite, which has a thermal conductivity of 100 kcal/m-hr-'c.
第３図は本発明装置と従来装置との単結晶に対する断熱
性についての比較試験結果を示すグラフであり、横軸に
単結晶温度（’Ｃ）を、また縦軸に融液面からの距Ｍ
（ｎ）をとって示しである。グラフ中白丸でプロットし
たのは本発明装置の、また黒丸でプロットしたのは第５
図に示す従来装置の各結果である。Figure 3 is a graph showing the results of a comparative test of the thermal insulation properties for single crystals between the device of the present invention and the conventional device, with the horizontal axis representing the single crystal temperature ('C), and the vertical axis representing the distance from the melt surface. M
(n) is shown. The white circles in the graph are for the device of the present invention, and the black circles are for the fifth device.
These are the results of the conventional device shown in the figure.
このグラフから明らかな如く、単結晶の温度は従来装置
に依った場合に比較して本発明装置に依った場合は大幅
に低減し得ていることが解る。またこの試験において従
来装置における単結晶引上速度は１．６ ｍｍ７分であ
ったのが本発明装置に依った場合は２．０ｍｍ／分に上
昇し得ることが確認された。As is clear from this graph, the temperature of the single crystal can be significantly reduced using the apparatus of the present invention compared to when using the conventional apparatus. Further, in this test, it was confirmed that the single crystal pulling speed in the conventional apparatus was 1.6 mm/7 minutes, but in the case of the apparatus of the present invention, it could be increased to 2.0 mm/minute.
更に結晶欠陥の生じ易い温度領域とされている単結晶温
度が５５０℃〜８５０℃の領域は従来装置では３００ｍ
５程度あったが、本発明装置では２５０ｍｍに短縮し得
た。これによって単結晶が５５０℃〜８５０°Ｃの範囲
に留まる時間は従来装置では１８８分であったが、本発
明装置では１２５分に短縮し得た。この結果、単結晶を
デバイスプロセスに通しても内部微小欠陥の密度は酸素
濃度が１５ Ｘ １０ ” ａ ｔｍ／ｃｃのレヘルで
１０ｂ個／龍２から１０４個／鶴２以下に低減し得、し
かも同時にウェーハー表面の積層欠陥密度の低減も可能
となった。Furthermore, the area where the single crystal temperature is 550°C to 850°C, which is considered to be a temperature area where crystal defects are likely to occur, is 300 m with conventional equipment.
The length was approximately 5 mm, but the device of the present invention was able to shorten it to 250 mm. As a result, the time the single crystal remained in the range of 550° C. to 850° C. was 188 minutes in the conventional device, but could be shortened to 125 minutes in the device of the present invention. As a result, even if a single crystal is subjected to a device process, the density of internal microdefects can be reduced from 10b defects/Ryu2 to less than 104 defects/Tsuru2 at an oxygen concentration of 15 x 10'' atm/cc. At the same time, it has also become possible to reduce the stacking fault density on the wafer surface.
以上の如く本発明装置にあっては輻射熱源である坩堝、
ヒータ、保温壁と引上げられる単結晶との間に配設され
る熱遮蔽部材は単結晶と対向する前面板は上端側から下
端側に向かうに従って内径が縮小される逆円錐台形に形
成され、また内部には断熱材を介在させたから断熱効果
が高く単結晶の引上速度を高め得、まデバイスプロセス
後の結晶欠陥密度を低減し得て、大幅な品質の向上を図
れるなど本発明は優れた効果を奏するものである。As described above, in the apparatus of the present invention, a crucible which is a radiant heat source,
In the heat shielding member disposed between the heater, the heat insulating wall, and the single crystal to be pulled, the front plate facing the single crystal is formed into an inverted truncated cone shape whose inner diameter decreases from the upper end to the lower end. The present invention has excellent properties, such as having a heat insulating material interposed inside, which has a high heat insulating effect, increasing the pulling speed of the single crystal, and reducing the crystal defect density after device processing, resulting in a significant improvement in quality. It is effective.
第１図は本発明装置の模式的縦断面図、第２図は熱遮蔽
部材の部分拡大断面図、第３図は本発明装置と従来装置
との比較試験結果を示すグラフ、第４，５図は従来装置
の模式的縦断面図である。
１・・・・坩堝 ２・・・ヒータ ３・・・保温壁４・
・・熱遮蔽部材 ６・・・種結晶 ８・・・単結晶４１
・・・環状リム部 ４２・・・支持筒部 ４３・・・熱
遮蔽体代理人 弁理士 河 野 登 夫第 １
図
第 ２ 図
第 ３図
第 ４ 図Fig. 1 is a schematic longitudinal sectional view of the device of the present invention, Fig. 2 is a partially enlarged sectional view of the heat shielding member, Fig. 3 is a graph showing the comparative test results between the device of the present invention and the conventional device, and Fig. 4 and 5 The figure is a schematic vertical cross-sectional view of a conventional device. 1... Crucible 2... Heater 3... Heat retention wall 4.
...Heat shielding member 6...Seed crystal 8...Single crystal 41
...Annular rim part 42...Support tube part 43...Heat shield agent Patent attorney Noboru Kono No. 1
Figure 2 Figure 3 Figure 4
Claims (1)
坩堝内の融液から単結晶を引上げる手段と、前記坩堝内
の融液の上方であって、単結晶の引上げ域の周囲に配設
された熱遮蔽部材とを備えた単結晶製造装置において、
前記熱遮蔽部材は環状リム部と、該環状リム部の内側縁
から融液面上であって単結晶の引上げ域の周囲に垂下さ
れ、内部に断熱材を有する環状に形成され、単結晶の引
上げ域と対向する内面側は上端側から下端側に向かうに
従って縮径された逆円錐台形とした熱遮蔽体とを具備す
ることを特徴とする単結晶製造装置。 ２、前記断熱材は黒鉛フェルト又は石英フェルトである
特許請求の範囲第１項記載の単結晶製造装置。[Scope of Claims] 1. A crucible for heating and melting raw materials for the single crystal to be produced, means for pulling the single crystal from the melt in the crucible, and a means for pulling the single crystal from the melt in the crucible, above the melt in the crucible; In a single crystal manufacturing apparatus equipped with a heat shielding member disposed around a crystal pulling area,
The heat shielding member has an annular rim portion, and is suspended from the inner edge of the annular rim portion over the melt surface and around the pulling area of the single crystal, and is formed into an annular shape having a heat insulating material inside, and 1. A single-crystal manufacturing apparatus, comprising: a heat shield having an inverted truncated conical shape whose inner surface facing the pulling region is tapered in diameter from the upper end toward the lower end. 2. The single crystal manufacturing apparatus according to claim 1, wherein the heat insulating material is graphite felt or quartz felt.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14975687A JPS63315589A (en) | 1987-06-16 | 1987-06-16 | Single crystal production apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14975687A JPS63315589A (en) | 1987-06-16 | 1987-06-16 | Single crystal production apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63315589A true JPS63315589A (en) | 1988-12-23 |
| JPH0535715B2 JPH0535715B2 (en) | 1993-05-27 |
Family
ID=15482062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14975687A Granted JPS63315589A (en) | 1987-06-16 | 1987-06-16 | Single crystal production apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63315589A (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03153595A (en) * | 1989-11-11 | 1991-07-01 | Osaka Titanium Co Ltd | Device for pulling single crystal |
| JPH03177391A (en) * | 1989-12-05 | 1991-08-01 | Nippon Steel Corp | Production of silicon single crystal |
| JPH0570283A (en) * | 1991-03-20 | 1993-03-23 | Shin Etsu Handotai Co Ltd | Method and apparatus for production of silicon single crystal |
| JPH0656571A (en) * | 1992-04-16 | 1994-03-01 | Sumitomo Metal Ind Ltd | Method for controlling oxygen concentration of single crystal at pulling up of single crystal and apparatus for growing single crystal used in this method |
| JP2562245B2 (en) * | 1991-06-24 | 1996-12-11 | コマツ電子金属株式会社 | Single crystal pulling device |
| EP0867531A1 (en) * | 1995-12-08 | 1998-09-30 | Shin-Etsu Handotai Company, Limited | Single crystal production apparatus and process |
| US6251184B1 (en) | 1997-02-13 | 2001-06-26 | Samsung Electronics Co., Ltd. | Insulating-containing ring-shaped heat shields for czochralski pullers |
| US6340392B1 (en) | 1997-10-24 | 2002-01-22 | Samsung Electronics Co., Ltd. | Pulling methods for manufacturing monocrystalline silicone ingots by controlling temperature at the center and edge of an ingot-melt interface |
| US6485807B1 (en) | 1997-02-13 | 2002-11-26 | Samsung Electronics Co., Ltd. | Silicon wafers having controlled distribution of defects, and methods of preparing the same |
| US6503594B2 (en) | 1997-02-13 | 2003-01-07 | Samsung Electronics Co., Ltd. | Silicon wafers having controlled distribution of defects and slip |
| JP2006131433A (en) * | 2004-11-02 | 2006-05-25 | Sumitomo Metal Ind Ltd | Method of producing silicon carbide single crystal |
| SG135030A1 (en) * | 2000-09-29 | 2007-09-28 | Samsung Electronics Co Ltd | Silicon wafers having controlled distribution of defects, methods of preparing the same, and czochralski pullers for manufacturing monocrystalline silicon ingots |
| CN101838846A (en) * | 2010-02-23 | 2010-09-22 | 上海汉虹精密机械有限公司 | Single crystal furnace device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004107132A (en) * | 2002-09-18 | 2004-04-08 | Sumitomo Mitsubishi Silicon Corp | Heat shielding member for silicon single crystal pulling apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62138386A (en) * | 1985-12-11 | 1987-06-22 | Shin Etsu Handotai Co Ltd | Device for pulling single crystal |
-
1987
- 1987-06-16 JP JP14975687A patent/JPS63315589A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62138386A (en) * | 1985-12-11 | 1987-06-22 | Shin Etsu Handotai Co Ltd | Device for pulling single crystal |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03153595A (en) * | 1989-11-11 | 1991-07-01 | Osaka Titanium Co Ltd | Device for pulling single crystal |
| JPH03177391A (en) * | 1989-12-05 | 1991-08-01 | Nippon Steel Corp | Production of silicon single crystal |
| JPH0570283A (en) * | 1991-03-20 | 1993-03-23 | Shin Etsu Handotai Co Ltd | Method and apparatus for production of silicon single crystal |
| JP2562245B2 (en) * | 1991-06-24 | 1996-12-11 | コマツ電子金属株式会社 | Single crystal pulling device |
| JPH0656571A (en) * | 1992-04-16 | 1994-03-01 | Sumitomo Metal Ind Ltd | Method for controlling oxygen concentration of single crystal at pulling up of single crystal and apparatus for growing single crystal used in this method |
| EP0867531A1 (en) * | 1995-12-08 | 1998-09-30 | Shin-Etsu Handotai Company, Limited | Single crystal production apparatus and process |
| EP0867531A4 (en) * | 1995-12-08 | 1999-03-03 | Shinetsu Handotai Kk | Single crystal production apparatus and process |
| US5972106A (en) * | 1995-12-08 | 1999-10-26 | Shin-Etsu Handotai Co., Ltd. | Device and method for producing single crystal |
| US6251184B1 (en) | 1997-02-13 | 2001-06-26 | Samsung Electronics Co., Ltd. | Insulating-containing ring-shaped heat shields for czochralski pullers |
| US6409833B2 (en) | 1997-02-13 | 2002-06-25 | Samsung Electronics Co., Ltd. | Insulating-containing ring-shaped heat shields and support members for Czochralski pullers |
| US6472040B1 (en) | 1997-02-13 | 2002-10-29 | Samsung Electronics Co., Ltd. | Semi-pure and pure monocrystalline silicon ingots and wafers |
| US6485807B1 (en) | 1997-02-13 | 2002-11-26 | Samsung Electronics Co., Ltd. | Silicon wafers having controlled distribution of defects, and methods of preparing the same |
| US6503594B2 (en) | 1997-02-13 | 2003-01-07 | Samsung Electronics Co., Ltd. | Silicon wafers having controlled distribution of defects and slip |
| US6676753B2 (en) | 1997-02-13 | 2004-01-13 | Samsung Electronics Co., Ltd. | Czochralski pullers for manufacturing monocrystalline silicon ingots, including heat shield having sloped portions |
| US6780238B2 (en) | 1997-02-13 | 2004-08-24 | Samsung Electronics Co., Ltd. | Argon/ammonia rapid thermal annealing for silicon wafers |
| US6340392B1 (en) | 1997-10-24 | 2002-01-22 | Samsung Electronics Co., Ltd. | Pulling methods for manufacturing monocrystalline silicone ingots by controlling temperature at the center and edge of an ingot-melt interface |
| SG135030A1 (en) * | 2000-09-29 | 2007-09-28 | Samsung Electronics Co Ltd | Silicon wafers having controlled distribution of defects, methods of preparing the same, and czochralski pullers for manufacturing monocrystalline silicon ingots |
| JP2006131433A (en) * | 2004-11-02 | 2006-05-25 | Sumitomo Metal Ind Ltd | Method of producing silicon carbide single crystal |
| CN101838846A (en) * | 2010-02-23 | 2010-09-22 | 上海汉虹精密机械有限公司 | Single crystal furnace device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0535715B2 (en) | 1993-05-27 |
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