JPS6331523A - Apparatus for treating waste gas - Google Patents
Apparatus for treating waste gasInfo
- Publication number
- JPS6331523A JPS6331523A JP61173783A JP17378386A JPS6331523A JP S6331523 A JPS6331523 A JP S6331523A JP 61173783 A JP61173783 A JP 61173783A JP 17378386 A JP17378386 A JP 17378386A JP S6331523 A JPS6331523 A JP S6331523A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- magnetic field
- discharge
- waste gas
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002912 waste gas Substances 0.000 title claims abstract description 29
- 239000007789 gas Substances 0.000 claims abstract description 82
- 238000000034 method Methods 0.000 claims abstract description 15
- 230000005684 electric field Effects 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims abstract description 6
- 230000004907 flux Effects 0.000 claims abstract description 4
- 238000011282 treatment Methods 0.000 claims description 24
- 238000012545 processing Methods 0.000 claims description 14
- 239000012212 insulator Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 15
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 11
- 229910000077 silane Inorganic materials 0.000 abstract description 10
- 239000001257 hydrogen Substances 0.000 abstract description 7
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 7
- 238000001020 plasma etching Methods 0.000 abstract description 5
- 239000012265 solid product Substances 0.000 abstract description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 4
- 239000011888 foil Substances 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 230000001473 noxious effect Effects 0.000 abstract 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 229910001868 water Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052810 boron oxide Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 231100000614 poison Toxicity 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000003440 toxic substance Substances 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229920006266 Vinyl film Polymers 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001784 detoxification Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 229910001392 phosphorus oxide Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Landscapes
- Treating Waste Gases (AREA)
Abstract
Description
【発明の詳細な説明】
〔３−１産業上の利用分野〕
本発明は廃ガス処理装置に関する。更に詳しくは、本発
明は半導体産業などで用いられるプラズマプロセシング
例えばプラズマエツチング若しくは化学気相成長法−Ｃ
ＶＤ（Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ Ｄｅｐｏｓｉ−
ｔｉｏｎ）法−において未処理のまま大気中に放出すれ
ば何等かの公害を生ずる可能性を持つ気体または蒸気を
無害化処理するため該気体又は蒸気にプラズマ放電を行
なう放電管を含む廃ガス処理装置に関する。本発明に用
いる放電管は約１０””ｍｍＨｇから約１０ｍｍＨｇま
での広い圧力範囲で作動し上記無害化処理を高率良く達
成することができる。DETAILED DESCRIPTION OF THE INVENTION [3-1 Industrial Application Field] The present invention relates to a waste gas treatment device. More specifically, the present invention applies to plasma processing methods such as plasma etching or chemical vapor deposition methods used in the semiconductor industry and the like.
VD (Chemical Vapor Deposit)
waste gas treatment including discharge tubes that perform plasma discharge on gases or vapors in order to detoxify gases or vapors that may cause some kind of pollution if released into the atmosphere untreated. Regarding equipment. The discharge tube used in the present invention operates in a wide pressure range from about 10'' mmHg to about 10 mmHg, and can accomplish the above detoxification treatment with high efficiency.
〔３−２従来の技術〕
たとえば、アモルファスシリコン太陽電池の製造の場合
、原料であるシラン又はジシランはそのまま又は適当な
ガスで希釈され反応槽の中でプラズマＣＶＤ法により分
解されてアモルファスシリコンの薄膜となる。この際、
未反応の原料ガスは分解生成物の水素と共にポンプによ
り大気中に排出される。プラズマＣＶＤを開始する直前
や終了の直後では反応の調整や製品の一様性を確保する
ため、原料ガスが其のまま反応を行なうことなく排出さ
れる事がある。またｐｎ接合を作る為にフォスフイン又
はジボランを前記原料ガスに混合することがある。これ
らのガスはいずれも毒性を有するため、ポンプからの排
出ガスは従来化学的方法で処理されていた。[3-2 Prior Art] For example, in the production of amorphous silicon solar cells, the raw material silane or disilane is used as it is or diluted with an appropriate gas and decomposed in a reaction tank by plasma CVD to form a thin film of amorphous silicon. becomes. On this occasion,
The unreacted raw material gas is discharged into the atmosphere by a pump together with the decomposition product hydrogen. Immediately before starting or ending plasma CVD, the raw material gas may be discharged without undergoing any reaction in order to adjust the reaction and ensure product uniformity. In addition, phosphine or diborane may be mixed with the raw material gas to form a pn junction. Since all of these gases are toxic, the exhaust gases from pumps have traditionally been treated using chemical methods.
化学的処理の他に電気的処理方法及び処理装置も提案さ
れている。たとえば、特開昭第５１−１２９８６８号に
は有毒物質を含有する廃ガス及び酸化剤をプラズマが発
生している空間で相互に接触せしめることにより前記有
毒物質を安定な化合物に変え。In addition to chemical treatments, electrical treatment methods and treatment devices have also been proposed. For example, Japanese Patent Application Laid-Open No. 129868/1983 discloses a method in which waste gas containing toxic substances and an oxidizing agent are brought into contact with each other in a space where plasma is generated, thereby converting the toxic substances into stable compounds.
この化合物を前記廃ガスから除去することを特徴とする
廃ガスの処理方法が開示されている。また。A method for treating waste gas is disclosed, which is characterized in that this compound is removed from the waste gas. Also.
特開昭第５８−６２３１号には反応性の廃ガスを排出す
る反応槽と排出装置との間に配置され、前記反応性の廃
ガスをプラズマ放電により分解して前記排出装置により
排出するようにしたことを特徴とする廃ガス処理装置が
提案されている。JP-A No. 58-6231 discloses a device disposed between a reaction tank for discharging reactive waste gas and a discharge device, the reactive waste gas being decomposed by plasma discharge and discharged by the discharge device. A waste gas treatment device has been proposed which is characterized by:
〔３−３発明が解決しようとする問題点〕化学的処理方
法では、処理設備の方が製造設備より大規模になる場合
があり、更にプラズマＣｖＤゃプラズマエツチングなど
の装置毎に処理設備が必要になる場合もあり、小型簡便
でしかも有効な処理法が望まれている。一方、従来の電
気的処理方法についても、プラズマの反応槽に用いたの
と同じ電源を使用したのでは極めて高価なものとなって
しまう。一方、安価な直流や交流を用いたのでは、１０
′″”ｍｍＨｇ以下の気圧では全く放電せず、電気的に
廃ガス処理装置を行なう事は出来ない。[3-3 Problems to be solved by the invention] In chemical processing methods, the processing equipment may be larger than the manufacturing equipment, and in the case of plasma CVD, processing equipment is required for each device such as plasma etching. Therefore, a small, simple and effective treatment method is desired. On the other hand, the conventional electrical processing method also becomes extremely expensive if the same power source used for the plasma reaction tank is used. On the other hand, if cheap direct current or alternating current is used, 10
If the pressure is less than '''''mmHg, there will be no discharge at all, making it impossible to operate the waste gas treatment device electrically.
〔３−４問題点を解決する手段及び作用〕本発明者は電
気的廃ガス処理方法の欠点を克服するため鋭意研究した
結果、放電管中電界と磁界が約４５°乃至約１３５°の
角度で交わるように磁界印加装置を設は電界と磁界の交
わる空間に廃ガスを流通させると微量濃度の廃ガスでも
プラズマ反応が効率良く進行し極めて効率良い廃ガス処
理が可能であることを知見した。この新規な知見に基づ
き本発明は成されたものである。[3-4 Means and operation for solving the problems] As a result of intensive research to overcome the drawbacks of electrical waste gas treatment methods, the present inventor found that the electric field and magnetic field in the discharge tube are at an angle of about 45° to about 135°. By setting up a magnetic field application device so that the electric and magnetic fields intersect, we discovered that if the waste gas is passed through a space where the electric and magnetic fields intersect, the plasma reaction will proceed efficiently even at a trace concentration of waste gas, making it possible to treat waste gas extremely efficiently. . The present invention has been made based on this new knowledge.
即ち、本発明によれば、ガス導入口とガス導出口を有す
る管状容器内に少なくとも一対の電極を設け、該ガス導
入口と該ガス導出口はガス流通空間により連結されてい
る放電管及び該電極と接続される直流又は交流電源を含
む廃ガス処理装置において、該ガス導入口より流入した
ガスをプラズマ化させるため該ガス流通空間で該電極に
より形成される電界の向きと約４５°乃至約１３５°の
角度で交わる直流又は交流の磁界を印加する磁界印加装
置を該放電管に装着させ且つ該放電管容器の磁力線と交
わる器壁の少なくとも表面が絶縁物で構成されているこ
とを特徴とする廃ガス処理装置が提供される。That is, according to the present invention, at least one pair of electrodes is provided in a tubular container having a gas inlet and a gas outlet, and the gas inlet and the gas outlet are connected to the discharge tube and the gas outlet through a gas circulation space. In a waste gas treatment device including a DC or AC power source connected to an electrode, the direction of the electric field formed by the electrode in the gas flow space is approximately 45° to approximately A magnetic field applying device for applying direct current or alternating current magnetic fields that intersect at an angle of 135° is attached to the discharge tube, and at least the surface of the vessel wall that intersects with the magnetic field lines of the discharge tube container is made of an insulator. A waste gas treatment device is provided.
本廃ガス処理装置の主要部を構成する放電管の基本的構
造の一例を第１図に示す。プラズマプロセシングたとえ
ばプラズマエツチング若しくはＣＶＤ法において未処理
のまま大気中に放出すれば何等かの公害を生ずる可能性
を持つ気体または蒸気、たとえばシラン系ガス（シラン
、ジシラン、トリシランなど）、ボラン系ガス（ジボラ
ンなど）、ホスフィン系ガス、弗化シリコーン及びその
誘導体または有機金属など半導体デバイス製造の際排出
される気体又は蒸気はガス導入口４を通じて放電管内に
導入される。導入された気体又は蒸気はガス流通空間Ｉ
Ｏに至る。ガス流通空間１０では直流又は交流電源に接
続された少なくとも一対の電極１．２により形成される
電界の向きと約４５°乃至約１３５°の角度で交わる直
流又は交流の磁界６を印加する。この電界と磁界の交叉
する空間内に上記気体又は蒸気が導入されると放電が生
ずる。この放電は約１０−１０−７ａから約１０ｍｍＨ
ｇまでの広い圧力範囲で生じる。この放電により上記の
気体又は蒸気はプラズマ化され次の反応が行なわれる。FIG. 1 shows an example of the basic structure of a discharge tube that constitutes the main part of this waste gas treatment device. In plasma processing, such as plasma etching or CVD, gases or vapors that may cause some kind of pollution if released into the atmosphere untreated, such as silane gases (silane, disilane, trisilane, etc.), borane gases ( Gases or vapors discharged during the manufacturing of semiconductor devices, such as diborane, phosphine-based gas, silicon fluoride and its derivatives, or organic metals, are introduced into the discharge tube through the gas inlet 4. The introduced gas or vapor flows through the gas circulation space I.
Leads to O. In the gas flow space 10, a direct current or alternating current magnetic field 6 is applied which intersects the direction of the electric field formed by at least one pair of electrodes 1.2 connected to a direct current or alternating current power supply at an angle of about 45° to about 135°. When the gas or vapor is introduced into the space where the electric and magnetic fields intersect, a discharge occurs. This discharge is about 10mmH from about 10-10-7a
occurs over a wide pressure range up to g. Due to this discharge, the above gas or vapor is turned into plasma, and the next reaction takes place.
シランはシリコーンと水素に、ジボランはホウ素と水素
に、酸素共存下では、酸化ボロンと水素に、ホスフィン
は酸素共存下で酸化燐と水に、弗化シリコーンはカルシ
ューム粉末共存下でシリコーンと弗化カルシュームに、
有機金属は酸素共存下で水と炭酸ガスと金属酸化物に変
化する。発生した水素、水蒸気、炭酸ガスなどは安全な
気体又は蒸気としてガス導出口５より排出される。シリ
コーン、ホウ素、酸化ボロン、チッ化ボロン、酸化燐な
どの固体生成物は放電管内、特に電極近辺若しくは内壁
に堆積する。気圧が低いときには陰極の両脇の器壁３の
内部上に堆積するが、気圧が高くて陽極の外側にグロー
が出来るときには、そのグローの近くの器壁にも堆積す
るようになる。又、ガスの流量を増やすと、プラズマ領
域より見てガス流の上流側よりも下流側の方に遥かに多
くの堆積が認められる。即ちプラズマ内で生じたラジカ
ルが気流の影響を受けて下流に運ばれて堆積している事
を示している。堆積した固体生成物は通常、公知の手段
を用いて管外に取り出すことができる。例えば、電極表
面はアルミニューム箔などの金属箔で被覆しその他の部
分を絶縁性フィルムで被覆しておき、これらを適宜交換
するのが最も容易な方法である。また、放電管を容易に
分解可能な構造としておき適当な時間毎に分解清掃する
ことも可能である。さらに放電管外壁及び電極に機械的
振動を付与し、固体生成物を下方に落下させ放電近辺空
間外に集積除去することもできる。管内の清掃を容易に
するため内壁表面をビニル系フィルムで被覆しそのフィ
ルムを適宜交換することもできる。Silane turns into silicone and hydrogen, diborane turns into boron and hydrogen, boron oxide and hydrogen in the coexistence of oxygen, phosphine turns into phosphorus oxide and water in the coexistence of oxygen, silicone fluoride turns into silicone and fluoride in the coexistence of calcium powder. Calcium,
Organometallics change into water, carbon dioxide, and metal oxides in the presence of oxygen. Generated hydrogen, water vapor, carbon dioxide gas, etc. are discharged from the gas outlet 5 as safe gas or steam. Solid products such as silicone, boron, boron oxide, boron nitride, and phosphorous oxide are deposited within the discharge tube, especially near the electrodes or on the inner walls. When the atmospheric pressure is low, it is deposited on the inside of the vessel wall 3 on both sides of the cathode, but when the atmospheric pressure is high and a glow is formed on the outside of the anode, it is also deposited on the vessel wall near the glow. Also, when the gas flow rate is increased, much more deposition is observed on the downstream side of the gas flow than on the upstream side of the plasma region. This indicates that radicals generated within the plasma are carried downstream and deposited under the influence of air currents. The deposited solid product can usually be removed from the tube using known means. For example, the easiest method is to cover the electrode surface with a metal foil such as aluminum foil and cover the other parts with an insulating film, and replace these as appropriate. It is also possible to construct the discharge tube so that it can be easily disassembled and to disassemble and clean it at appropriate intervals. Furthermore, it is also possible to apply mechanical vibration to the outer wall of the discharge tube and the electrodes to cause the solid products to fall downward and collect and remove them outside the space near the discharge. In order to facilitate cleaning inside the pipe, the inner wall surface can be coated with a vinyl film and the film can be replaced as appropriate.
上述の方法により未だ処理のまま大気中に放出すれば何
等かの公害を生ずる可能性を持つ気体又は蒸気の無害化
が達成される。By the above-described method, gases or vapors which may cause some pollution if released into the atmosphere while still being treated are rendered harmless.
本発明で用いる管状容器は通常の放電管にみられる円筒
状である必要は無く、任意形状の断面。The tubular container used in the present invention does not need to be cylindrical as seen in ordinary discharge tubes, but can have an arbitrary cross section.
例えば三角形若しくは矩形断面の容器も用いることがで
きる。電界の大きさは放電開始するものであればよい。For example, containers of triangular or rectangular cross section can also be used. The electric field may be of any magnitude as long as it starts a discharge.
この値は処理されるべきガスの種類。This value is the type of gas to be processed.
ガスの圧力、電極間隔などで広範囲に変わる。プラズマ
を発生するに必要な大きさでありさえすればよい、好ま
しい電界の大きさを得るための電極間電位は通常□、約
１０Ｖ以上である。直流電源、単相交流電源、多相交流
電源のいずれも用いることができるがプラズマ反応を連
続的に行なう見地から、即ち未処理のままでガスが排出
される可能性を回避する見地から直流電源若しくは多相
交流電源を用いることが好ましい。電極の間隔は臨界的
でないが、磁束密度（Ｂ）で次式より決まる電子の旋回
半径（ｒ）よりも大きい値であることが一般的に好まし
い。It varies widely depending on gas pressure, electrode spacing, etc. The potential between the electrodes to obtain a preferred electric field strength, which only needs to be of a magnitude necessary to generate plasma, is usually □, about 10 V or more. Either a DC power source, a single-phase AC power source, or a multi-phase AC power source can be used, but a DC power source is recommended from the standpoint of performing the plasma reaction continuously, that is, from the standpoint of avoiding the possibility of gas being discharged untreated. Alternatively, it is preferable to use a polyphase AC power source. Although the spacing between the electrodes is not critical, it is generally preferred that it be larger than the radius of gyration (r) of electrons determined by the following equation based on the magnetic flux density (B).
但しＶ：電子の磁界に垂直な運動エネルギー（電子ボル
ト）
■：電子の重量
ｅ：電子の荷電
必要な磁界の大きさは電極間隔、印加電圧で変わる。磁
束密度（Ｂ）は次式を満足するものであれば良い。However, V: Kinetic energy of electrons perpendicular to the magnetic field (electron volts) ■: Weight of electrons e: Charge of electrons The magnitude of the required magnetic field varies depending on the electrode spacing and applied voltage. The magnetic flux density (B) may be one that satisfies the following formula.
但しｄ：電極間隔 Ｖ ｐ ｍ ｐ ｅ ：上述の通りとする。However, d: electrode spacing V p m p e : As described above.
磁界の大きさは一般的には数ガウス以上であることが好
ましく、実用上約１００乃至約５００ガウスの範囲に有
ることが更に好ましい。磁界印加装置は電磁石でも永久
磁石でも良い、直流磁界印加装置、単相交流磁界印加装
置、多相交流磁界印加装置のいずれも用いることができ
るが、プラズマ反応を連続的に行なう見地から、即ち、
未処理のままでガスが排出される可能性を回避する見地
から直流磁界印加装置若しくは多相交流磁界印加装置を
用いることが好ましい。本発明においては、放電管の器
壁の磁力線と交わる部分の少なくとも表面は絶縁物で構
成されている。器壁の磁力線と交わる部分が導電性であ
れば電子の損失が増加するため廃ガス処理の能率が低下
する６本発明においては。The magnitude of the magnetic field is generally preferably several Gauss or more, and in practice it is more preferably in the range of about 100 to about 500 Gauss. The magnetic field application device may be an electromagnet or a permanent magnet, and any of a DC magnetic field application device, a single-phase AC magnetic field application device, and a multiphase AC magnetic field application device can be used, but from the standpoint of performing a plasma reaction continuously, that is,
It is preferable to use a DC magnetic field application device or a multiphase AC magnetic field application device from the viewpoint of avoiding the possibility that gas is discharged without being treated. In the present invention, at least the surface of the portion of the wall of the discharge tube that intersects with the lines of magnetic force is made of an insulator. If the part of the vessel wall that intersects with the magnetic field lines is conductive, the loss of electrons will increase and the efficiency of waste gas treatment will decrease.6 In the present invention.
放電管の器壁を導電性物質で構成し電極を兼ねさせ磁力
線と交わる部分は絶縁性フィルムで被覆することも好ま
しい実施態様の一つである。また、放電を安定化させ及
び／又はガスのプラズマ化に伴い生成する固体物質の分
離を容易にするガス。One of the preferred embodiments is that the wall of the discharge tube is made of a conductive material and also serves as an electrode, and the portion that intersects with the lines of magnetic force is covered with an insulating film. Also, a gas that stabilizes the discharge and/or facilitates the separation of solid substances generated as the gas becomes plasma.
例えば酸素若しくはチッ素、を処理すべきガスに共存さ
せることができる。このためには、放電管に付加的なガ
ス導入口を設けることが好ましい。For example, oxygen or nitrogen can be present in the gas to be treated. For this purpose, it is preferable to provide the discharge vessel with an additional gas inlet.
プラズマは放電によってｉ１４した状態を云うが、プラ
ズマの温度はガス圧、ガスの種類などによって変わる。Plasma refers to the i14 state caused by discharge, and the temperature of the plasma varies depending on the gas pressure, type of gas, etc.
プラズマエネルギーは１ｅＶから１０ｅＶ ＜らいの範
囲にある。ガス導入口より導入された気体又は蒸気が交
叉する電界と磁界の作用を受けてプラズマ反応を行なう
時間はガスの流量及び放電電力で変わる。即ち、放電電
力を多くすればこの時間は少なくてすみ、放電電力を一
定にして流量を増すとこの時間を長くする必要がある。The plasma energy is in the range of 1 eV to 10 eV. The time during which the gas or vapor introduced through the gas inlet undergoes a plasma reaction under the action of the intersecting electric and magnetic fields varies depending on the gas flow rate and discharge power. That is, if the discharge power is increased, this time can be shortened, and if the discharge power is kept constant and the flow rate is increased, this time needs to be lengthened.
流量と放電電流の関係は第５図に示す。上記時間は一般
的には約０．０１秒から約５分の範囲にある。プラズマ
の気体密度は第５図に実例が示されている。これは装置
の寸法によって異なる。一般に放電では比例則なるもの
があり、気体圧Ｐと電極量比Ｍｄとの積ｐｄが一定なれ
ば放電の状態は似てくる。従ってＰを小さくするとｄを
大きくすればよい。The relationship between flow rate and discharge current is shown in FIG. The time period typically ranges from about 0.01 seconds to about 5 minutes. An example of the gas density of plasma is shown in FIG. This depends on the size of the device. Generally, there is a proportionality law in discharge, and if the product pd of the gas pressure P and the electrode amount ratio Md is constant, the discharge state becomes similar. Therefore, if P is decreased, d may be increased.
水産ガス処理装置の使用法は多様である。その具体例の
−を第３図に示す。水産ガス処理装置１２．１３はプラ
ズマプロセシング（プラズマＣＶＤ若しくはプラズマエ
ツチング）の反応槽１１と排気ポンプ１４の間に設置さ
れる。処理装置の清掃を容易にするため切り替えバルブ
１６．１７．また放電を安定化させ及び／又はガスのプ
ラズマ化により生成する固体物質の分割を容易にするガ
スを供給するボンベ］５を配置することができる。The uses of fish gas treatment equipment are diverse. A specific example of this is shown in FIG. The marine gas processing equipment 12, 13 is installed between the reaction tank 11 for plasma processing (plasma CVD or plasma etching) and the exhaust pump 14. Switching valves 16.17. to facilitate cleaning of the processing equipment. Further, a cylinder] 5 for supplying a gas that stabilizes the discharge and/or facilitates the division of the solid material generated by turning the gas into plasma may be provided.
プラズマ反応が確実に行なわれるようにするため、本発
明に用いる放電管は対向する電極の間にガスの導入口を
もってくるか、ガス輸送又は排出管の外壁を一つの電極
とし、その中にもう一極を設けることでガスの流路が必
ず対向する電極間を通過する構造とするか、電極でない
外壁と電極の最外側との距離が１平均自由行程以下とな
るような構造をもつように設計することが好ましい０水
戻ガス処理装置において必要な磁界を発生する方法と電
極の形状の具体例を第６図〜第１０図に示す。In order to ensure that the plasma reaction takes place, the discharge tube used in the present invention either has a gas inlet between opposing electrodes, or the outer wall of the gas transport or discharge tube is one electrode, and there is another Either create a structure in which the gas flow path always passes between opposing electrodes by providing one pole, or create a structure in which the distance between the outer wall that is not an electrode and the outermost part of the electrode is one mean free path or less. Specific examples of the method of generating the necessary magnetic field and the shape of the electrodes in the desirably designed 0 water return gas treatment apparatus are shown in FIGS. 6 to 10.
図中７は永久磁石、８は電磁石、９は絶縁性フィルムを
示す。絶縁性フィルムに固体生成物を付着させこれを交
換することにより放電管の清掃を迅速に行なうことがで
きる。放電に交流を用いる場合には、第１０図に例示す
るように、３相交流を使用して、処理装置内で電流が零
の時刻が全く出来ないようにすることによって処理が不
十分のガスを放出することが防止される。In the figure, 7 is a permanent magnet, 8 is an electromagnet, and 9 is an insulating film. The discharge tube can be quickly cleaned by depositing solid products on the insulating film and replacing it. When using alternating current for discharge, as shown in Fig. 10, three-phase alternating current is used to prevent insufficiently processed gas from occurring in the processing equipment at any time when the current is zero. is prevented from being released.
〔３−５発明の効果〕
本発明によれば小型簡便でしかも効率の良い経済的な廃
ガス処理装置が提供される０本発明で用いる放電管は１
０−２ｍｍＨｇ以下の低気圧でも放電し廃ガスのプラズ
マ化反応を励起することができる。[3-5 Effects of the Invention] According to the present invention, a compact, simple, efficient, and economical waste gas treatment device is provided. The discharge tube used in the present invention is 1.
Even at a low pressure of 0-2 mmHg or less, it is possible to discharge and stimulate the plasma reaction of waste gas.
従って、本発明の廃ガス処理装置は微量濃度の廃ガスも
極めて効率良く無害化させることができる。Therefore, the waste gas treatment apparatus of the present invention can render even trace amounts of waste gas harmless extremely efficiently.
〔３−６実施例〕
第２図の放電管を用いて４８０ガウスの磁界を印加して
放電させた゛ときの電圧・電流特性を第４図に示す。シ
ランガスの流量が十分に少ないときでも放電することが
確認された。この時、磁界を取り去れば放電を維持する
ことは出来ない。処理すべきガスの流量と所要電流との
関係は第５図の様になる。シランガスのプラズマ処理に
より電極近辺及び器壁内壁にアモルファスシリコンが堆
積するのが［６された。尚、本処理が完全に行なわれる
ことの確認は、分光器にコンＧ−５００）によるシラン
スペクトルの観測、ならびに放電特性の変化点の測定お
よび空気中に放出したガスから酸化シリコンの白粉がも
はや生じないかどうかにより行なった。[Embodiment 3-6] FIG. 4 shows the voltage/current characteristics when a magnetic field of 480 Gauss was applied to cause discharge using the discharge tube shown in FIG. 2. It was confirmed that discharge occurred even when the flow rate of silane gas was sufficiently low. At this time, if the magnetic field is removed, the discharge cannot be maintained. The relationship between the flow rate of the gas to be treated and the required current is as shown in FIG. Amorphous silicon was deposited near the electrodes and on the inner wall of the vessel due to the silane gas plasma treatment [6]. In addition, confirmation that this treatment is complete can be made by observing the silane spectrum using a spectrometer (Con G-500), measuring the change point of the discharge characteristics, and confirming that white powder of silicon oxide is no longer present in the gas released into the air. This was done based on whether or not it would occur.
第１図は本焼ガス処理装置に用いる放電管の基本構造を
示す斜視図、第２図は本発明の有効性を試験したときの
放電管の構造と寸法とを示す。第３図は本発明の廃ガス
処理装置の使用方法を示す。
第４図はチッ素とシランとの放電特性を示す。第５図は
処理量と所要電流との関係を示す。第６図〜第１０図は
本焼ガス処理装置の具体例を示す。第１Ｏ図は放電に３
相交流を用いる場合の結線の方法を示す。
各回において参照番号は次のものを表わしている。
■、２：電極 ８：電磁石３：放電管器壁
９：絶縁性フィルム４：ガス導入口 １
０：ガス流通空間５：ガス導出口 １１：プラズ
マプロセシング反応槽
６：磁力線 １２．１３：水産ガス処理装置７：
永久磁石 １４：排気ポンプ１５：ガス供給ボ
ンベ
１６．１７：切り替えバルブ
特許出願人 財団法人応用科学研究所
板谷良平
第３図
第４図
第５図
ＳｉＨ４；７Ｌ ｔ ｍｔ（Ｊ！’？訊３）／ｍｉｎ
第６図
（ａ）
（ｂ）
第７図
（ａ）
（ｂ）FIG. 1 is a perspective view showing the basic structure of a discharge tube used in a firing gas treatment apparatus, and FIG. 2 shows the structure and dimensions of the discharge tube used when testing the effectiveness of the present invention. FIG. 3 shows a method of using the waste gas treatment apparatus of the present invention. FIG. 4 shows the discharge characteristics of nitrogen and silane. FIG. 5 shows the relationship between throughput and required current. FIGS. 6 to 10 show specific examples of the firing gas treatment apparatus. Figure 1O shows 3 for discharge.
This shows the wiring method when using phase current. In each edition, the reference numbers represent the following: ■, 2: Electrode 8: Electromagnet 3: Discharge vessel wall 9: Insulating film 4: Gas inlet 1
0: Gas distribution space 5: Gas outlet 11: Plasma processing reaction tank 6: Magnetic field lines 12.13: Fishery gas processing equipment 7:
Permanent magnet 14: Exhaust pump 15: Gas supply cylinder 16. 17: Switching valve Patent applicant: Ryohei Itaya, Institute of Applied Science Figure 3 Figure 4 Figure 5 SiH4;7L t mt (J!'?Question 3) /min
Figure 6 (a) (b) Figure 7 (a) (b)
Claims (6)
なくとも一対の電極を設け、該ガス導入口と該ガス導出
口はガス流通空間により連結されている放電管及び該電
極と接続される直流又は交流電源を含む廃ガス処理装置
において、該ガス導入口より流入したガスをプラズマ化
させるため該ガス流通空間で該電極により形成される電
界の向きと約４５°乃至約１３５°の角度で交わる直流
又は交流の磁界を印加する磁界印加装置を該放電管に装
着させ且つ該放電管容器の磁力線と交わる器壁の少なく
とも表面が絶縁物で構成されていることを特徴とする廃
ガス処理装置。(1) At least one pair of electrodes is provided in a tubular container having a gas inlet and a gas outlet, and the gas inlet and the gas outlet are connected to a discharge tube and the electrode connected by a gas circulation space. In a waste gas treatment device including a DC or AC power source, the gas flowing in from the gas inlet is turned into plasma at an angle of about 45° to about 135° with the direction of the electric field formed by the electrode in the gas circulation space. A waste gas treatment device characterized in that a magnetic field application device that applies intersecting direct current or alternating magnetic fields is attached to the discharge tube, and at least the surface of the vessel wall that intersects with the lines of magnetic force of the discharge tube container is made of an insulator. .
子の旋回半径（ｒ）よりも大きい間隔をもって配置され
ていることを特徴とする特許請求の範囲第（１）項記載
の処理装置。(2) The process according to claim (1), wherein the electrodes are arranged at intervals larger than a radius of gyration (r) of electrons determined by the magnetic flux density (B) of the applied magnetic field. Device.
磁界印加装置であることを特徴とする特許請求の範囲第
（１）項又は第（２）項記載の処理装置。(3) The processing device according to claim (1) or (2), wherein the power source is a DC power source, and the magnetic field application device is a DC magnetic field application device.
直流又は多相交流磁界印加装置であることを特徴とする
特許請求の範囲第（１）項又は第（２）項記載の処理装
置。(4) Claims (1) or (2), characterized in that the power source is a multiphase AC power source, and the magnetic field application device is a DC or multiphase AC magnetic field application device. Processing equipment.
構成され、該器壁内表面が絶縁性フィルムで被覆されて
いることを特徴とする特許請求の範囲第（１）項〜第（
４）項のいずれかに記載の処理装置。(5) The wall of the discharge tube also serves as an electrode and is therefore made of a conductive material, and the inner surface of the wall is coated with an insulating film. No. (
4) The processing device according to any one of the above.
て、該導入口を通して放電を安定化させ及び／又はガス
のプラズマ化により生成する固体物質の分離を容易にす
るガスを導入するように構成されていることを特徴とす
る特許請求の範囲第（１）項〜第（５）項のいずれかに
記載の処理装置。(6) the vessel between the discharges has an additional gas inlet through which a gas can be introduced to stabilize the discharge and/or to facilitate the separation of solid substances produced by plasmaization of the gas; The processing device according to any one of claims (1) to (5), characterized in that the processing device is configured to be introduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61173783A JPS6331523A (en) | 1986-07-25 | 1986-07-25 | Apparatus for treating waste gas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61173783A JPS6331523A (en) | 1986-07-25 | 1986-07-25 | Apparatus for treating waste gas |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6331523A true JPS6331523A (en) | 1988-02-10 |
| JPH0480723B2 JPH0480723B2 (en) | 1992-12-21 |
Family
ID=15967069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61173783A Granted JPS6331523A (en) | 1986-07-25 | 1986-07-25 | Apparatus for treating waste gas |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6331523A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63258660A (en) * | 1987-04-16 | 1988-10-26 | Mitsui Toatsu Chem Inc | Gas treatment method |
| JPH01307429A (en) * | 1987-06-23 | 1989-12-12 | Rei Chu Kin-Chun | Method and apparatus for extracting contaminant steam from gas |
| US6576202B1 (en) | 2000-04-21 | 2003-06-10 | Kin-Chung Ray Chiu | Highly efficient compact capacitance coupled plasma reactor/generator and method |
| KR100596511B1 (en) | 2004-06-30 | 2006-07-03 | 플라즈마에너지자원 주식회사 | Air cleaner |
| KR20100110267A (en) * | 2009-04-02 | 2010-10-12 | 클린 테크놀로지 가부시키가이샤 | Control method of plasma for exhaust gas treating apparatus using magnetic field and exhaust gas treating apparatus using the same |
-
1986
- 1986-07-25 JP JP61173783A patent/JPS6331523A/en active Granted
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63258660A (en) * | 1987-04-16 | 1988-10-26 | Mitsui Toatsu Chem Inc | Gas treatment method |
| JPH01307429A (en) * | 1987-06-23 | 1989-12-12 | Rei Chu Kin-Chun | Method and apparatus for extracting contaminant steam from gas |
| US6576202B1 (en) | 2000-04-21 | 2003-06-10 | Kin-Chung Ray Chiu | Highly efficient compact capacitance coupled plasma reactor/generator and method |
| US6998027B2 (en) | 2000-04-21 | 2006-02-14 | Dryscrub, Etc | Highly efficient compact capacitance coupled plasma reactor/generator and method |
| US7241428B2 (en) | 2000-04-21 | 2007-07-10 | Dryscrub, Etc | Highly efficient compact capacitance coupled plasma reactor/generator and method |
| KR100596511B1 (en) | 2004-06-30 | 2006-07-03 | 플라즈마에너지자원 주식회사 | Air cleaner |
| KR20100110267A (en) * | 2009-04-02 | 2010-10-12 | 클린 테크놀로지 가부시키가이샤 | Control method of plasma for exhaust gas treating apparatus using magnetic field and exhaust gas treating apparatus using the same |
| JP2010240534A (en) * | 2009-04-02 | 2010-10-28 | Clean Technology Co Ltd | Control method of plasma by magnetic field in exhaust gas treating apparatus and exhaust gas treating apparatus using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0480723B2 (en) | 1992-12-21 |
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