JPS63314719A - Manufacture of ceramic superconductive formed body - Google Patents
Manufacture of ceramic superconductive formed bodyInfo
- Publication number
- JPS63314719A JPS63314719A JP62150380A JP15038087A JPS63314719A JP S63314719 A JPS63314719 A JP S63314719A JP 62150380 A JP62150380 A JP 62150380A JP 15038087 A JP15038087 A JP 15038087A JP S63314719 A JPS63314719 A JP S63314719A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic
- superconducting
- superconductive
- plasma
- molded body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000000126 substance Substances 0.000 claims abstract description 9
- 239000007790 solid phase Substances 0.000 claims abstract description 7
- 239000012071 phase Substances 0.000 claims abstract description 4
- 239000002994 raw material Substances 0.000 claims description 14
- 239000012808 vapor phase Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 239000011225 non-oxide ceramic Substances 0.000 claims description 3
- 229910052575 non-oxide ceramic Inorganic materials 0.000 claims description 3
- 238000003786 synthesis reaction Methods 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000001556 precipitation Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 abstract description 4
- 239000001301 oxygen Substances 0.000 abstract description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 2
- XKNBIWPDDSWRFJ-UHFFFAOYSA-N barium;pentane-2,4-dione Chemical compound [Ba].CC(=O)CC(C)=O XKNBIWPDDSWRFJ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000002131 composite material Substances 0.000 abstract description 2
- 229910001882 dioxygen Inorganic materials 0.000 abstract description 2
- 230000004907 flux Effects 0.000 abstract description 2
- 239000000843 powder Substances 0.000 abstract description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- QNZRVYCYEMYQMD-UHFFFAOYSA-N copper;pentane-2,4-dione Chemical compound [Cu].CC(=O)CC(C)=O QNZRVYCYEMYQMD-UHFFFAOYSA-N 0.000 abstract 1
- UOGLMDDWORXRHP-UHFFFAOYSA-N pentane-2,4-dione;yttrium Chemical compound [Y].CC(=O)CC(C)=O UOGLMDDWORXRHP-UHFFFAOYSA-N 0.000 abstract 1
- 230000007704 transition Effects 0.000 description 4
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000001376 precipitating effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野〕
本発明はセラミックス超電導成形体の製造方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Field of Application) The present invention relates to a method for manufacturing a ceramic superconducting molded body.
アルカリ土金属、希土類元素、銅及び酸素からなる酸化
物系超電導成形体等のセラミックス超電導成形体は、超
電導転移温度（Ｔ、）が高く、その応用が期待されてい
るが、超電導成形体の形状としては、ブロック状のもの
がほとんどであり、線状や膜状のものについては、一部
に報告が見られるにすぎない。Ceramic superconducting molded bodies such as oxide-based superconducting molded bodies made of alkaline earth metals, rare earth elements, copper, and oxygen have a high superconducting transition temperature (T,) and are expected to be applied, but the shape of the superconducting molded body is Most of them are block-shaped, and there are only some reports of linear or film-like ones.
前記膜状のＭ１電導成形体は、電子機器配線用回路基板
等に今後広範な用途が期待出来るものであり、セラミッ
クス超電導体を有機物と混合して、セラミックス基板上
にスクリーン印刷する事が試みられている。The film-like M1 conductive molded body is expected to have a wide range of applications in the future, such as circuit boards for wiring electronic devices, and attempts have been made to mix ceramic superconductors with organic substances and screen print them on ceramic substrates. ing.
然しなから従来の方法では、超電導特性に有害な作用を
及ぼす有機物、特に炭素を完全に除去する事が困難であ
り、セラミックス超電導成形体を膜状に成形すると、全
く超電導現象を示さなくなるか、或いは低いＴＣのもの
しか得る事が出来なかった。これに対して、スパッタ等
気相法によるセラミックス超電導膜の形成も最近検討さ
れ始められており、比較的高いＴｃが報告されているが
、前記超電導膜は臨界電流密度（Ｊ、）が極めて低く、
限られた用途にしか利用出来ないものであった。However, with conventional methods, it is difficult to completely remove organic substances, especially carbon, which have a harmful effect on superconducting properties, and when a ceramic superconducting molded body is formed into a film, it may not exhibit superconducting phenomena at all, or Or I could only get one with a low TC. On the other hand, the formation of ceramic superconducting films by vapor phase methods such as sputtering has recently begun to be considered, and relatively high Tc has been reported, but the superconducting films have extremely low critical current densities (J). ,
It could only be used for limited purposes.
本発明は上記の点に鑑み鋭意検討の結果なされたもので
あり、その目的とするところは、超電導転移温度（Ｔｃ
）、臨界電流密度（Ｊ、）等の超電導特性が良好なセラ
ミックス超電導成形体の製造方法を提供する事である。The present invention was made as a result of intensive studies in view of the above points, and its purpose is to improve the superconducting transition temperature (Tc
), critical current density (J, ), and other superconducting properties are provided.
即ち本発明は、気相法によるセラミックス超電導成形体
の製造において、セラミックス超電導物質の気相原料種
の導入を少なく共１回中断し、その間非超電導物質の気
相合成原料を導入し、該非超電導物質を析出せしめる事
を特徴とするセラミックス超電導成形体の製造方法であ
る。That is, in the production of a ceramic superconducting molded body by the vapor phase method, the present invention interrupts the introduction of the vapor phase raw material of the ceramic superconducting material at least once, during which time the vapor phase synthesis raw material of the non-superconducting material is introduced, and the non-superconducting This is a method for producing a ceramic superconducting molded body characterized by precipitating a substance.
本発明はセラミックス超電導成形体の１！！造途中でｖ
＆■の非超電導物質を析出させ、セラミックス超電導物
質中に非超電導物質が分散又は積層された複合材料とす
る事により、前記非超電導物質が磁束線の移動を阻止す
る所謂ピンニング効果によって、高いＪｃを得ようとす
るものである。The present invention is a ceramic superconducting molded body! ! In the middle of construction
By precipitating a non-superconducting substance of &■ to create a composite material in which the non-superconducting substance is dispersed or layered in a ceramic superconducting substance, a high Jc can be achieved by the so-called pinning effect of the non-superconducting substance blocking the movement of magnetic flux lines. It is an attempt to obtain.
本発明は、最近高いＴｃが報告されているＹ−Ｂａ−Ｃ
ｕ−０系、Ｌａ−３ｒ−Ｃｕ−０系等の酸化物系セラミ
ックス超電導成形体の製造において、特に優れた超電導
特性を得る事が出来るものであるが、窒化物系等その他
のセラミックス超電導成形体に対しても適用する事が出
来る。The present invention uses Y-Ba-C, which has been recently reported to have a high Tc.
In the production of oxide-based ceramic superconducting molded bodies such as u-0 series and La-3r-Cu-0 series, particularly excellent superconducting properties can be obtained, but other ceramic superconducting molded bodies such as nitride-based ceramics can be manufactured. It can also be applied to the body.
又前記非超電導物質としては、例えば窒化物等の非酸化
物セラミックスを用いる事が出来る。Further, as the non-superconducting material, for example, non-oxide ceramics such as nitrides can be used.
本発明における気相法としては、スパッタ、基若等のＰ
ＶＤ法或いはＣＶＤ法等の内いずれを用いても差し支え
なく、例えばセラミックス超電導物質の固相原料を酸素
等のプラズマによって加熱、蒸発させ、この様にして得
られた気相原料種を前記プラズマによって輸送する事に
よって、加熱されたセラミックス等の基板上にセラミッ
クス超電導膜が形成される。第１図は前記方法によるセ
ラミンクス超電導成形体製造装置の概略説明図であって
、１はガス導入管、２は高周波コイル、３は反応管、４
はボート、５は固相原料、６は電気炉、７は基板である
。ガス導入管１から導入された酸素等のキャリアガスが
高周波コイル２によってプラズマ化し、該プラズマによ
ってボート４上に乗せられたセラミックス超電導物質の
固相原料５を加熱、蒸発させ、この様にして得られた気
相原料種を前記プラズマ化したキャリアガスによって輸
送する事によって、電気炉６によって加熱されたセラミ
ックス、樹脂、はうろう等からなる２に仮７上にセラミ
ックス超電導膜が形成される。The gas phase method in the present invention includes sputtering, Motowaka etc.
There is no problem in using either the VD method or the CVD method. For example, a solid phase raw material for a ceramic superconducting material is heated and evaporated by plasma such as oxygen, and the vapor phase raw material species obtained in this way is evaporated by the plasma. By transporting, a ceramic superconducting film is formed on a heated substrate such as ceramics. FIG. 1 is a schematic explanatory diagram of an apparatus for producing a ceramic superconducting molded body according to the method described above, in which 1 is a gas introduction tube, 2 is a high-frequency coil, 3 is a reaction tube, and 4 is a high-frequency coil.
5 is a boat, 5 is a solid phase raw material, 6 is an electric furnace, and 7 is a substrate. A carrier gas such as oxygen introduced from the gas introduction pipe 1 is turned into plasma by the high-frequency coil 2, and the plasma heats and evaporates the solid-phase raw material 5 of the ceramic superconducting material placed on the boat 4, thereby producing the material obtained in this way. A ceramic superconducting film is formed on the temporary layer 7 made of ceramics, resin, wax, etc. heated by the electric furnace 6 by transporting the vaporized raw material species by the carrier gas turned into plasma.
本発明によるセラミックス超電導成形体は、電子機器配
線用回路基板、ジョセフソン素子等として広範な用途が
期待できるものであり、更にステンレス等の金属線表面
に前記セラミックス超電導膜を形成し、そのまま或いは
伸線加工して線材として利用する事も可能である。The ceramic superconducting molded body according to the present invention can be expected to have a wide range of uses, such as circuit boards for electronic equipment wiring, Josephson elements, etc. Furthermore, the ceramic superconducting film can be formed on the surface of metal wires such as stainless steel, and it can be used as it is or expanded. It is also possible to process it and use it as a wire rod.
本発明においては、セラミックス超電導成形体の製造途
中で微量の非超電導物質を析出させているので、該非超
電導物質によるピンニング効果によって、高い臨界電流
密度（Ｊ、）を得る事が出来る。In the present invention, since a small amount of non-superconducting material is precipitated during the production of the ceramic superconducting molded body, a high critical current density (J) can be obtained due to the pinning effect of the non-superconducting material.
次に本発明を実施例により更に具体的に説明する。第１
図に示した装置を用い、（１）ガス導入管１から導入さ
れた酸素ガスを高周波コイル２によって加熱してプラズ
マ化し、該プラズマによってボート４上に乗せられたア
セチルアセトンイツトリウム１００ ｇ、アセチルアセ
トンｍ １００ ｇ、アセチルアセトンバリウム１００
ｇからなる固相原料粉５を加熱、蒸発させ、この様にし
て得られた気相原料種を前記プラズマガスによって輸送
し、０、 Ｉ Ｔ ｏ ｒ ｒの真空中で、電気炉６に
よって８００°Ｃに加熱されたＭｇＯ基板７上にセラミ
ックス超電導膜を３０分間形成させる工程及び（２）前
記酸素プラズマによる気相原料種の導入を中断し、ガス
導入管１からＡｒ＋５％ＳｉＨ，及びＮＨ。Next, the present invention will be explained in more detail with reference to Examples. 1st
Using the apparatus shown in the figure, (1) Oxygen gas introduced from the gas introduction pipe 1 is heated by the high-frequency coil 2 to turn it into plasma, and the plasma causes 100 g of yttrium acetylacetonate and m m of acetylacetonate to be placed on the boat 4. 100 g, barium acetylacetone 100
The solid-phase raw material powder 5 consisting of 1.5 g is heated and evaporated, and the gas-phase raw material species thus obtained are transported by the plasma gas and heated in an electric furnace 6 at 800 m A step of forming a ceramic superconducting film for 30 minutes on the MgO substrate 7 heated to 0.degree.
ガスを導入し、前記ＭｇＯ基板７上にＳｉＮを３０秒間
析出させる工程を３回繰り返して、厚さ約１ａｍのセラ
ミックス超電導膜を形成させた。The process of introducing gas and depositing SiN on the MgO substrate 7 for 30 seconds was repeated three times to form a ceramic superconducting film with a thickness of about 1 am.
この様にして得られたセラミックス超電導膜の特性を測
定したところ、超電導転移温度（’ｒｃ）−９０’Ｋ、
液体窒素温度での臨界電流密度（Ｊ、）＝２５ＯＡ／ｃ
ｄであって、高いＪｃを有していた。When we measured the characteristics of the ceramic superconducting film obtained in this way, we found that the superconducting transition temperature ('rc) was -90'K;
Critical current density (J,) at liquid nitrogen temperature = 25OA/c
d and had a high Jc.
一方前記（１）の工程のみを３回繰り返して、ＳｉＮを
析出させなかった場合は、”ｒｃ＝９ｏ″″Ｋ、Ｊｃ
””５０Ａ／ｃ−であって、低いＪ、Ｌか得られなかっ
た。On the other hand, when only the step (1) above is repeated three times and no SiN is precipitated, "rc=9o""K, Jc
""It was 50A/c-, and low J and L could not be obtained.
本発明の方法によれば、超電導転移温度（Ｔ、）、臨界
電流密度（ＪＣ’）等の超電導特性が良好なセラミック
ス超電導成形体を製造することが出来、工業上顕著な効
果を奏するものである。According to the method of the present invention, a ceramic superconducting molded body having good superconducting properties such as superconducting transition temperature (T) and critical current density (JC') can be produced, and it has a remarkable industrial effect. be.
第１図は本発明の方法によるセラミックス超電導成形体
製造装置の概略説明図である。
ｌ・・・ガス導入管、 ２・・・高周波コイル、 ３−
・・反応管、 ４・・・ボート、 ５・・・固相原料、
６・・・電気炉、 ７・・・基板。FIG. 1 is a schematic explanatory diagram of an apparatus for producing a ceramic superconducting molded body according to the method of the present invention. l...Gas introduction pipe, 2...High frequency coil, 3-
... reaction tube, 4 ... boat, 5 ... solid phase raw material,
6...Electric furnace, 7...Substrate.
Claims (5)
おいて、セラミックス超電導物質の気相原料種の導入を
少なく共１回中断し、その間非超電導物質の気相合成原
料を導入し、該非超電導物質を析出せしめる事を特徴と
するセラミックス超電導成形体の製造方法。(1) In the production of ceramic superconducting molded bodies by the vapor phase method, the introduction of the vapor phase raw material of the ceramic superconducting material is interrupted at least once, during which time the vapor phase synthesis raw material of the non-superconducting material is introduced, and the non-superconducting material is A method for producing a ceramic superconducting molded body characterized by precipitation.
である事を特徴とする特許請求の範囲第１項記載のセラ
ミックス超電導成形体の製造方法。(2) The method for producing a ceramic superconducting molded body according to claim 1, wherein the ceramic superconducting material is an oxide-based superconducting material.
特徴とする特許請求の範囲第１項記載のセラミックス超
電導成形体の製造方法。(3) The method for producing a ceramic superconducting molded body according to claim 1, wherein the non-superconducting substance is a non-oxide ceramic.
る事を特徴とする特許請求の範囲第３項記載のセラミッ
クス超電導成形体の製造方法。(4) The method for producing a ceramic superconducting molded body according to claim 3, wherein the non-oxide ceramic is a nitride ceramic.
プラズマによる固相原料の加熱ａｎｄ／ｏｒ蒸発によっ
て成される事を特徴とする特許請求の範囲第１項記載の
セラミックス超電導成形体の製造方法。(5) The production of at least one of the gas phase raw material species,
A method for producing a ceramic superconducting molded body according to claim 1, characterized in that the method is performed by heating and/or evaporating a solid-phase raw material using plasma.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62150380A JPS63314719A (en) | 1987-06-17 | 1987-06-17 | Manufacture of ceramic superconductive formed body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62150380A JPS63314719A (en) | 1987-06-17 | 1987-06-17 | Manufacture of ceramic superconductive formed body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63314719A true JPS63314719A (en) | 1988-12-22 |
Family
ID=15495732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62150380A Pending JPS63314719A (en) | 1987-06-17 | 1987-06-17 | Manufacture of ceramic superconductive formed body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63314719A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01133971A (en) * | 1987-08-07 | 1989-05-26 | Hitachi Ltd | Production of superconducting material |
| JPH01192722A (en) * | 1988-01-26 | 1989-08-02 | Matsushita Electric Ind Co Ltd | Production of superconductor thin film |
| JPH08239214A (en) * | 1987-09-18 | 1996-09-17 | Internatl Business Mach Corp <Ibm> | Superconducting substance and superconducting material |
-
1987
- 1987-06-17 JP JP62150380A patent/JPS63314719A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01133971A (en) * | 1987-08-07 | 1989-05-26 | Hitachi Ltd | Production of superconducting material |
| JPH08239214A (en) * | 1987-09-18 | 1996-09-17 | Internatl Business Mach Corp <Ibm> | Superconducting substance and superconducting material |
| JPH01192722A (en) * | 1988-01-26 | 1989-08-02 | Matsushita Electric Ind Co Ltd | Production of superconductor thin film |
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