JPS63294691A - Film electroluminescent element - Google Patents
Film electroluminescent elementInfo
- Publication number
- JPS63294691A JPS63294691A JP62130939A JP13093987A JPS63294691A JP S63294691 A JPS63294691 A JP S63294691A JP 62130939 A JP62130939 A JP 62130939A JP 13093987 A JP13093987 A JP 13093987A JP S63294691 A JPS63294691 A JP S63294691A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- luminous
- light
- semiconductor substrate
- conductive semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 239000010409 thin film Substances 0.000 claims description 7
- 239000013078 crystal Substances 0.000 abstract description 2
- 238000010030 laminating Methods 0.000 abstract description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、交流駆動の薄膜ＥＬ（エレクトロルミネセン
ス）素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to an AC-driven thin film EL (electroluminescence) element.
（従来の技術）
一般に、この種の薄膜ＥＬ素子は、特公昭５７−４１２
００号公報等に開示され第３図に示すように、二重絶縁
膜構造を有し、ガラス等の透明絶縁板から成る基板１
（厚さ約２龍）上に蒸着法やスパッタリング法等の適当
な方法を用いてＩＴＯ等の透明導電材料を素材とする透
明電極２（膜厚約２０００人）を形成し、次いでこの上
に絶縁破壊を防ぐため５１０ｚ＋ ＡｎｚＯｓ＋ Ｙｚ
Ｏｓ＋ Ｔａｔ０５等の酸化物絶縁材料を素材とする第
１の絶縁層３（膜厚４０００〜８０００人）、ＺｎＳ等
の母体材料内にＭｎ等の発光中心を添加した螢光材料を
素材とする発光層４ （膜厚３０００〜６０００人）、
第１の絶縁層３と同様な材料から成る第２の絶縁層５
（膜厚４０００〜８０００人）及び前記透明電極２と対
向すると共に反射性を有する電極としてＡ党等の導電材
料を素材とする背面電極６（膜厚約２０００人）をこの
順序で順次蒸着法やスパッタリング法等の適当な方法を
用いて積層形成して成るものであり、透明電極２と背面
電極６間に２００ｖ前後の交流電圧を印加すると電極２
．６間に発生する電界により発光層４が発光を行い、基
板１を通って外部へ照射される。(Prior art) Generally, this type of thin film EL device is
As disclosed in Publication No. 00 and shown in FIG. 3, a substrate 1 having a double insulating film structure and consisting of a transparent insulating plate such as glass
A transparent electrode 2 (film thickness of about 2000 mm) made of a transparent conductive material such as ITO is formed on the transparent electrode 2 (about 2000 mm thick) using an appropriate method such as vapor deposition or sputtering. 510z+ AnzOs+ Yz to prevent dielectric breakdown
The first insulating layer 3 (film thickness: 4,000 to 8,000 layers) is made of an oxide insulating material such as Os+ Tat05, and the luminescent material is made of a fluorescent material in which a luminescent center such as Mn is added to a matrix material such as ZnS. Layer 4 (film thickness 3000-6000 people),
A second insulating layer 5 made of the same material as the first insulating layer 3
(film thickness: 4,000 to 8,000 layers), and a back electrode 6 (film thickness: approximately 2,000 layers) made of a conductive material such as A, as an electrode facing the transparent electrode 2 and having reflective properties, in this order. It is formed by laminating layers using an appropriate method such as or sputtering, and when an AC voltage of around 200V is applied between the transparent electrode 2 and the back electrode 6, the electrode 2
．． The light emitting layer 4 emits light due to the electric field generated between the two, and the light is emitted through the substrate 1 to the outside.
（発明が解決しようとする問題点）
このようなＥＬ素子は、発光層４にキャリアを発生又は
注入し、かかるキャリアを発光層４で加速して十分な運
動エネルギーを得て発光中心を衝突励起することにより
発光中心の核内遷移をもたらし固有の発光を得るもので
あり、このキャリアとして働く電子の平均自由行程は発
光Ｎ４の結晶性によって支配される。つまり、キャリア
の平均自由行程の長い発光層４すなわち結晶性の優れた
発光Ｎ４が駆動電圧を低下させることができ、発光効率
の向上を図ることができる。しかし、従来のＥＬ素子は
、前述したように絶縁層３の上に、又は透明電極２の上
に直接発光Ｎ４を形成するものであり、発光Ｎ４の結晶
性はこれら下地の形態の影響を受けてしまい、優れた結
晶性を得ることが難しいと言う問題点があった。(Problems to be Solved by the Invention) Such an EL element generates or injects carriers into the light-emitting layer 4, accelerates the carriers in the light-emitting layer 4, obtains sufficient kinetic energy, and collisionally excites the light-emitting center. This brings about intranuclear transition of the luminescent center to obtain unique luminescence, and the mean free path of the electrons acting as carriers is controlled by the crystallinity of the luminescent N4. In other words, the light-emitting layer 4 with a long mean free path of carriers, that is, the light-emitting layer N4 with excellent crystallinity, can reduce the driving voltage and improve the light-emitting efficiency. However, as mentioned above, in the conventional EL element, the light emitting layer N4 is formed directly on the insulating layer 3 or on the transparent electrode 2, and the crystallinity of the light emitting layer N4 is influenced by the morphology of these underlying layers. Therefore, there was a problem in that it was difficult to obtain excellent crystallinity.
本発明は、前記問題点に基づいて成されたものであり、
発光層の結晶性を優れたものにし、駆動電圧を低下させ
発光効率の向上を図ることのできる薄膜ＥＬ素子を提供
することを目的とするものである。The present invention has been made based on the above problems, and
It is an object of the present invention to provide a thin film EL element that can improve the crystallinity of the light emitting layer, lower the driving voltage, and improve the light emitting efficiency.
（問題点を解決するための手段）
本発明は、導電性半導体基板上に、電圧印加に応じて発
光を呈する発光層を形成すると共に、この発光層の上に
透明電極を形成するものである。(Means for Solving the Problems) The present invention is to form a light-emitting layer that emits light in response to voltage application on a conductive semiconductor substrate, and to form a transparent electrode on this light-emitting layer. .
（作用）
発光層が導電性半導体基板の形態を反映し、結晶性が優
れたものになり、電子の平均自由行程を大きくすること
ができる。(Function) The light-emitting layer reflects the form of the conductive semiconductor substrate, has excellent crystallinity, and can increase the mean free path of electrons.
（実施例）
以下、図面に基づいて本発明の一実施例を詳述する。第
１図において、７はキャリア濃度ｎ＝１０” 〜１０”
／ｃｆ１１．抵抗率Ｐ 〜１０−’−１０−’Ｑ ・ｃ
ａ程度で厚みｄ ＝ ２００〜５００１１ ｍのｎ型Ｇ
ａＡｓ基板を用いた導電性半導体基板であり、この場合
、面方位が（１００）面の基板を用いている。８はこの
導電性半導体基板７の片面に形成され、絶縁破壊を防ぐ
ための第１の発光母体層であり、ＺｎＳ等の発光母体材
料を分子線エピタキシー法（ＭＢＥ法）等の適当な方法
を用いて膜厚１０００〜５０００人に成長して形成され
る。９は第１の発光母体層８の上に形成される発光層で
あり、ＺｎＳ等の発光母体材料内にＭｎ等の発光中心を
０．３〜０．８％添加した螢光材料を素材として同様に
ＭＢＥ法を用いて膜厚３０００〜６０００人に成長して
形成される。ＩＯはこの発光層９の上に形成される第２
の発光母体層であり、前記第１の発光母体層８と同様に
１０００〜５０００人に成長して２の発光母体層１０の
上に形成される透明電極であり、＾Ｕ等の透明導電材料
を真空蒸着法により膜厚３００〜７００人にて形成され
る。１２は最後に前記導電性半導体基板７の他面に形成
される金属電極であり、Ｉｎ−Ｇａ（５χ）等の導電材
料を真空蒸着法により形成して成る。(Example) Hereinafter, an example of the present invention will be described in detail based on the drawings. In Fig. 1, 7 is the carrier concentration n=10" to 10"
/cf11. Resistivity P ~10-'-10-'Q ・c
N-type G with thickness d = 200 to 50011 m at about a
This is a conductive semiconductor substrate using an aAs substrate, and in this case, a substrate with a (100) plane orientation is used. Reference numeral 8 denotes a first luminescent matrix layer formed on one side of the conductive semiconductor substrate 7 to prevent dielectric breakdown. The film is grown to a film thickness of 1,000 to 5,000 layers. 9 is a light-emitting layer formed on the first light-emitting base layer 8, and is made of a fluorescent material in which 0.3 to 0.8% of a luminescent center such as Mn is added to a light-emitting base material such as ZnS. Similarly, the MBE method is used to grow the film to a thickness of 3,000 to 6,000 mm. IO is a second layer formed on this light emitting layer 9.
It is a light-emitting base layer of 1000 to 5000 like the first light-emitting base layer 8, and is a transparent electrode formed on the second light-emitting base layer 10, which is made of a transparent conductive material such as ^U. It is formed with a film thickness of 300 to 700 mm using a vacuum evaporation method. A metal electrode 12 is finally formed on the other surface of the conductive semiconductor substrate 7, and is made of a conductive material such as In-Ga (5χ) by vacuum evaporation.
以上のように構成される本発明の薄膜ＥＬ素子は、導電
性半導体基板７の上に第１の発光母体層８を形成し従来
のＥＬ素子の絶１ｉ１３として機能させ、この上に導電
性半導体基板７の形態を反映した発光Ｎ９を形成すると
共に、この発光層９の上に第２の発光母体層１０を形成
して発光層９を同じ結晶形態の発光母体ｍｓ、ｉｏで挟
持した積層構造体としている。従来のＥＬ素子のように
透明電極あるいは絶縁層の上に発光層を形成すると、例
えばＺｎＳ ： Ｍｎを用いるとこの発光層は＜１１１
＞配向をとりやすく、（１１１）面積層の薄膜ＥＬ素子
は局所的に双晶となりやすく優れた結晶性を得ることは
できない。しかし、本発明は（１００）面の導電性半導
体基ｌｌ１７を用いこの上に絶縁層として＜１００＞配
向の第１の発光母体層８を形成し、この上に発光層９を
形成したため、この発光層９に導電性半導体基板７と第
１の発光母体Ｎ８の形態を反映させたＥＬ素子となる。In the thin film EL device of the present invention constructed as described above, the first light emitting base layer 8 is formed on the conductive semiconductor substrate 7 to function as an indispensable part of the conventional EL device. A laminated structure in which a light emitting layer N9 reflecting the form of the substrate 7 is formed, a second light emitting base layer 10 is formed on this light emitting layer 9, and the light emitting layer 9 is sandwiched between light emitting bases ms and io having the same crystal form. It is my body. When a light-emitting layer is formed on a transparent electrode or an insulating layer as in a conventional EL element, for example, when ZnS:Mn is used, this light-emitting layer has a thickness of <111
A thin film EL element with a (111) area layer tends to be locally twinned, making it impossible to obtain excellent crystallinity. However, in the present invention, a conductive semiconductor substrate 117 with a (100) plane is used, and a first light-emitting base layer 8 with a <100> orientation is formed as an insulating layer thereon, and a light-emitting layer 9 is formed on this. An EL element is obtained in which the light emitting layer 9 reflects the configurations of the conductive semiconductor substrate 7 and the first light emitting base N8.
さらに、この発光Ｎ９の上の第２の発光母体層１０も導
電性半導体基板７の形態を反映できるため、このような
積層構造の発光層９を完全に＜１００）配向として形成
でき、優れた結晶性を得て電子の平均自由行程を大きく
している。第２図は透明電極１１と金属電極１２との間
に電圧を印加した時のエネルギーバンドを模式的に示し
ており、電圧印加により第１の発光母体Ｎ８の伝導帯１
３上の電子１４あるいはこの第１の発光母体層８と発光
Ｎ９との境界に形成されたトラップに発生する電子１４
が加速され発光層９に注入される。Furthermore, since the second light-emitting base layer 10 on top of the light-emitting layer 10 can also reflect the morphology of the conductive semiconductor substrate 7, the light-emitting layer 9 having such a laminated structure can be formed with a completely <100) orientation, resulting in an excellent It obtains crystallinity and increases the mean free path of electrons. FIG. 2 schematically shows the energy band when a voltage is applied between the transparent electrode 11 and the metal electrode 12.
3 or electrons 14 generated in the traps formed at the boundary between the first luminescent host layer 8 and the luminescent layer N9.
is accelerated and injected into the light emitting layer 9.
この電子１４は大きい平均自由行程の発光層９に形成さ
れた電界により十分に加速され大きな運動エネルギーを
得て発光中心を衝突励起する。従って、発光効率の良い
電子エネルギー分布が得られ、駆動電圧を低下させるこ
とができ、安定動作も可能となる。These electrons 14 are sufficiently accelerated by the electric field formed in the luminescent layer 9 with a large mean free path, obtain large kinetic energy, and collide and excite the luminescent center. Therefore, an electron energy distribution with good luminous efficiency can be obtained, the driving voltage can be lowered, and stable operation can be achieved.
以上、本発明の一実施例について詳述したが、本発明の
要旨の範囲内で適宜変形可能である。例えば、前記実施
例では第１及び第２の発光母体層８．１０により発光層
９を挟持する構造を示したが、これらの発光母体層は一
層あるいはなくとも良い。Although one embodiment of the present invention has been described in detail above, it can be modified as appropriate within the scope of the gist of the present invention. For example, in the embodiment described above, a structure is shown in which the light emitting layer 9 is sandwiched between the first and second light emitting base layers 8 and 10, but these light emitting base layers may be one layer or may not be provided.
また、金属電極１２は必ずしも形成せず導電性半導体基
板７より電極を引き出すこともできる。Further, the metal electrode 12 is not necessarily formed, and the electrode can be drawn out from the conductive semiconductor substrate 7.
以上詳述したように本発明によれば、導電性半導体基板
上に、電圧印加に応じて発光を呈する発光層を形成する
と共に、この発光層の上に透明電極を形成することによ
り、発光層の結晶性を優れたものにして、駆動電圧を低
下させ発光効率の向上を図ることのできる薄膜ＥＬ素子
を提供できる。As detailed above, according to the present invention, a light-emitting layer that emits light in response to voltage application is formed on a conductive semiconductor substrate, and a transparent electrode is formed on this light-emitting layer. It is possible to provide a thin film EL element that has excellent crystallinity, lowers driving voltage, and improves luminous efficiency.
第１図は本発明の一実施例を示す断面図、第２図は同エ
ネルギーバンドを示す説明図、第３図は従来例を示す断
面図である。
７−導電性半導体基板
９−発光層
１１−透明電極FIG. 1 is a sectional view showing an embodiment of the present invention, FIG. 2 is an explanatory view showing the same energy band, and FIG. 3 is a sectional view showing a conventional example. 7-Conductive semiconductor substrate 9-Light emitting layer 11-Transparent electrode
Claims (1)
る発光層を形成すると共に、この発光層の上に透明電極
を形成することを特徴とする薄膜ＥＬ素子。A thin film EL device characterized by forming a light emitting layer that emits light in response to voltage application on a conductive semiconductor substrate, and forming a transparent electrode on the light emitting layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62130939A JPS63294691A (en) | 1987-05-27 | 1987-05-27 | Film electroluminescent element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62130939A JPS63294691A (en) | 1987-05-27 | 1987-05-27 | Film electroluminescent element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63294691A true JPS63294691A (en) | 1988-12-01 |
Family
ID=15046217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62130939A Pending JPS63294691A (en) | 1987-05-27 | 1987-05-27 | Film electroluminescent element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63294691A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0331997A1 (en) * | 1988-03-05 | 1989-09-13 | Stanley Electric Co., Ltd. | Elongated electroluminescence element and manufacturing method thereof |
-
1987
- 1987-05-27 JP JP62130939A patent/JPS63294691A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0331997A1 (en) * | 1988-03-05 | 1989-09-13 | Stanley Electric Co., Ltd. | Elongated electroluminescence element and manufacturing method thereof |
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