JPS63292693A - Multilayered ceramic wiring substrate characterized by high heat conductivity - Google Patents
Multilayered ceramic wiring substrate characterized by high heat conductivityInfo
- Publication number
- JPS63292693A JPS63292693A JP62126898A JP12689887A JPS63292693A JP S63292693 A JPS63292693 A JP S63292693A JP 62126898 A JP62126898 A JP 62126898A JP 12689887 A JP12689887 A JP 12689887A JP S63292693 A JPS63292693 A JP S63292693A
- Authority
- JP
- Japan
- Prior art keywords
- main component
- substrate
- ceramic
- aluminum nitride
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 title abstract description 32
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 13
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical group [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 5
- 239000004020 conductor Substances 0.000 abstract description 12
- 230000017525 heat dissipation Effects 0.000 abstract description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 abstract description 4
- 239000010937 tungsten Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 239000000843 powder Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910014813 CaC2 Inorganic materials 0.000 description 2
- 101100313164 Caenorhabditis elegans sea-1 gene Proteins 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 241001459693 Dipterocarpus zeylanicus Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920001610 polycaprolactone Polymers 0.000 description 1
- 239000004632 polycaprolactone Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、熱伝導性が高く、熱放散性か良好で、高密度
な回路を形成できる多層セラミック配線基板に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a multilayer ceramic wiring board that has high thermal conductivity, good heat dissipation, and can form a high-density circuit.
［従来の技術］
半導体工業の飛躍的な進展によって、ＩＣ１ＬＳＩが産
業用民需用に幅広く使用されるようになってきている。[Prior Art] With the dramatic progress of the semiconductor industry, IC1LSIs have come to be widely used for industrial and civilian purposes.
そしてそれに伴い、集積密度の高い、高速作動のＬＳＩ
の実装用基板として多層セラミック基板か注目されてい
る。一般にこのセラミック基板の材料としては、主にア
ルミナか使用されており、微細多層配線が可能であるこ
とから高密度実装に有効である。Along with this, high-speed operation LSI with high integration density
Multilayer ceramic substrates are attracting attention as mounting substrates. Generally, alumina is mainly used as the material for this ceramic substrate, and it is effective for high-density packaging because it allows fine multilayer wiring.
近年では、特に電子装置おにび機器は小型化、高密度化
が強く要求されており、これらの小型化への要求はＩＣ
やＬＳＩを実装づ−る基板に対しても生じている。そし
て、このような要求の結果、ハイブリッドＩＣとして抵
抗、コンデンサを基板内にうめ込む複合化基板の開発も
進められている（特開昭５９−０３２８６６号公報）。In recent years, there has been a strong demand for miniaturization and higher density, especially for electronic devices and equipment, and these demands for miniaturization are
This also occurs on boards on which LSIs are mounted. As a result of these demands, the development of composite substrates in which resistors and capacitors are embedded in the substrate as a hybrid IC is also progressing (Japanese Patent Application Laid-Open No. 59-032866).
一方、ＬＳＩにおいては高速作動・高集積化に伴ってチ
ップから発生ずる熱か多量になってくる傾向にあり前述
の基板の小型化と相乗して基板単位面積当りの発熱量が
大幅に増大している。このため、従来、用いられてきた
アルミナ基板では熱の放散性が十分ではないという問題
か生じ、アルミナ基板よりも熱伝導率か大きく、熱の放
散性に優れた絶縁基板が必要になってきた。On the other hand, as LSIs operate at higher speeds and become more highly integrated, the amount of heat generated by the chips tends to increase.As a result of the miniaturization of the circuit boards mentioned above, the amount of heat generated per unit area of the circuit board increases significantly. ing. For this reason, the problem arises that the alumina substrates that have been used in the past do not have sufficient heat dissipation properties, and there is a need for insulating substrates that have higher thermal conductivity and superior heat dissipation properties than alumina substrates. .
そこで熱放散性に対しで優れた４、、ｌ利として炭化ケ
イ素を主成分としたセラミック基板か開発された（特開
昭５７−１８０００６号公報）。しかし炭化ケイ素はそ
れ自体電気的には半導体に属し、比抵抗が１〜１０Ωｃ
ｍ程度で電気絶縁性かないため、絶縁基板としては用い
ることかできない。また炭化ケイ素は融点か高く非常に
焼結しにくいので、通常は焼結に際しては少量の焼結助
剤を添加し、高温で加圧するいわゆるホラ１〜プレス法
により作られる。Therefore, a ceramic substrate mainly composed of silicon carbide was developed as an advantage in terms of heat dissipation (Japanese Patent Laid-Open No. 180006/1983). However, silicon carbide itself belongs to a semiconductor electrically and has a specific resistance of 1 to 10 Ωc.
It cannot be used as an insulating substrate because it has no electrical insulating properties. Furthermore, since silicon carbide has a high melting point and is very difficult to sinter, sintering is usually done by adding a small amount of sintering aid and applying pressure at a high temperature, the so-called hora 1-press method.
この焼結助剤として酸化ベリリウムや窒化ホウ素を用い
ると、焼結助剤効果だけでなく、電気絶縁性に対しても
有効で炭化ケイ素主成分の焼結基板の比抵抗が１０１°
Ωｃｍ以上となる。しかし、ＬＳＴ等の実装基板にｄ３
いて重要な要素の１つである誘電率はＩＭＨｚで４０と
かなり高く、添加剤を加えた絶縁性も電圧が５ｖ程度に
なると粒子間の絶縁が急激に低下するため耐電圧に対し
ても問題がある。When beryllium oxide or boron nitride is used as this sintering aid, it is effective not only for the sintering aid but also for electrical insulation, and the specific resistance of the sintered substrate mainly composed of silicon carbide is 101°.
It becomes Ωcm or more. However, d3 on the mounting board such as LST
The dielectric constant, which is one of the most important factors in the manufacturing process, is quite high at 40 at IMHz, and even with the insulation added with additives, when the voltage reaches about 5V, the insulation between particles decreases rapidly, so there is also a problem with the withstand voltage. There is.
又、ＢｅＯ粉末を用いて多層セラミック基板を作製する
ことは可能であるか有毒性であるため実用上困難な面が
でてくる。Furthermore, it is difficult to fabricate a multilayer ceramic substrate using BeO powder because it is toxic in practice.
一方、プロセス的観点からしてホラ１〜プレス法を適用
しなりればならず、装置が大かかりになるばかりでなく
、基板の形状も大面積化は困焚１１てあり、表面平滑性
に対しても問題か多い。さらに、炭化ケイ素系を用いた
セラミック基板にａ３いては、従来のグリーンシーミル
法を用いたアルミナ多層セラミック基板技術を利用する
ことはプロセス的に極めて困難である。On the other hand, from a process point of view, it is necessary to apply the Hola 1 to Press method, which not only requires a large amount of equipment, but also makes it difficult to increase the substrate shape to a large area11, and the surface smoothness is affected. There are many problems with this as well. Furthermore, in terms of process, it is extremely difficult to use alumina multilayer ceramic substrate technology using the conventional Green Sea Mill method for ceramic substrates using silicon carbide.
ここでいうグリーンシート法多層セラミック基板技術と
は次に示す技術である。まずセラミック粉末を有機ビヒ
クルとともに混合し、スラリー化する。このスラリーを
キャスティング製膜法により１０〜４００卯程度の厚み
を有するシー１〜を有機フィルム上に形成ブる。このシ
ー１〜を所定の大きさに切断し、各層間の導通を得るた
めのスルーホールを形成したのち、厚膜印刷法により所
定の導体および抵抗パターンを形成する。これらの各パ
ターンを形成したセラミックグリーンシー１〜を積層プ
レスし説バインダーエ稈を経て焼成する。The green sheet multilayer ceramic substrate technology referred to herein is the following technology. First, ceramic powder is mixed with an organic vehicle to form a slurry. This slurry is used to form sheets 1 to 1 having a thickness of about 10 to 400 m on an organic film by a casting film forming method. After cutting the sheets 1 to 1 to a predetermined size and forming through holes for establishing conduction between each layer, predetermined conductor and resistance patterns are formed by thick film printing. Ceramic green sheets 1 to 1 with these patterns formed thereon are laminated and pressed, passed through a binder and fired.
「発明か解決しようとする問題点」
高密度実装基板として具備すべき主な性質としては、（
１）電気特性に対しては誘電率が低く、誘電損失か小さ
く、また電気絶縁性に優れていること、（２）機械的強
度が十分であること、（３）熱伝導性か高いこと、（４
）熱膨張係数がシリコンチップ等のそれに近いこと、お
よび（５）表面平滑性が優れていること、（６）高密度
化が容易であること等が必要である。"Problem to be solved by invention" The main properties that a high-density mounting board should have are (
1) Regarding electrical properties, it has a low dielectric constant, low dielectric loss, and excellent electrical insulation, (2) sufficient mechanical strength, (3) high thermal conductivity, (4
) The coefficient of thermal expansion is close to that of silicon chips, etc.; (5) the surface smoothness is excellent; and (6) it is easy to increase the density.
これらの基板性質全般に対して前述のセラミック基板は
決して十分なものであるとはいえない。The above-mentioned ceramic substrates cannot be said to be sufficient in terms of these substrate properties in general.
本発明者らは、これらの具備すべき基板性質に留意しな
がら、特に高熱伝導性および多層高密度化に着目して窒
化アルミニウム多層セラミック配線基板の発明に至った
。The present inventors have invented an aluminum nitride multilayer ceramic wiring board, paying particular attention to high thermal conductivity and high multilayer density, while paying attention to these substrate properties.
［問題点を解決するための手段］
本発明は、セラミック層が窒化アルミニウムを主成分と
する多結晶体で構成され、主成分が窒化タンタルである
抵抗層を内部に有することを特徴とする高熱伝導多層セ
ラミック配線基板である。[Means for Solving the Problems] The present invention provides a high-temperature ceramic layer in which the ceramic layer is composed of a polycrystalline body containing aluminum nitride as a main component, and has a resistance layer containing tantalum nitride as a main component therein. This is a conductive multilayer ceramic wiring board.
［作 用］
本発明においてはまず、多層セラミック基板を構成する
絶縁セラミック材料として熱伝導性の高い窒化アルミニ
ウムを用いる。この材料は、焼成後、窒化アルミニウム
多結晶の緻密な構造体を形成する。高熱伝導率を得るた
めには、焼結体の含有酸素量が少ない方が好ましく、そ
の為に添加物として還元剤を入れることが好ましい。[Function] In the present invention, first, aluminum nitride, which has high thermal conductivity, is used as an insulating ceramic material constituting the multilayer ceramic substrate. After firing, this material forms a dense structure of polycrystalline aluminum nitride. In order to obtain high thermal conductivity, it is preferable that the amount of oxygen contained in the sintered body is small, and therefore it is preferable to add a reducing agent as an additive.
また、抵抗層として窒化タンタルを用い、絶縁セラミッ
ク材料として窒化アルミニウムを用いるという組合わせ
によって優れた高熱伝導多層セラミック配線基板とする
ことができる。本発明の導体層としては通常多層セラミ
ック配線基板の材料として用いられているもので良く、
例えばタングステンが挙げられる。Further, by combining tantalum nitride as the resistance layer and aluminum nitride as the insulating ceramic material, an excellent highly thermally conductive multilayer ceramic wiring board can be obtained. The conductor layer of the present invention may be one that is normally used as a material for multilayer ceramic wiring boards.
An example is tungsten.
これら導体層および抵抗層に関しては、窒化アルミニウ
ムで構成されるセラミック層に複数の電源層、グランド
層および微細な信号線や抵抗体等の導体層を形成し、こ
れらの複数の導体層はセラミック層中に設けたビアボー
ルを介して電気的に接続される。Regarding these conductor layers and resistance layers, multiple power layers, ground layers, and conductor layers such as fine signal lines and resistors are formed on a ceramic layer made of aluminum nitride. It is electrically connected via a via ball provided inside.
したがって、実装基板の配線密度が非常に高められると
ともにＬＳＩ等の素子から発生する熱を効率的に外部に
放散することが可能である。Therefore, the wiring density of the mounting board can be greatly increased, and the heat generated from elements such as LSI can be efficiently dissipated to the outside.
［実施例］
以下本発明の実施例について、図面を参照して詳細に説
明する。[Examples] Examples of the present invention will be described in detail below with reference to the drawings.
第１図は本発明の一実施例を示−ｄ’［略構成図である
。図中、１は絶縁セラミック層であり、窒化アルミラム
の多結晶体を主成分として構成されている。２は抵抗体
で、窒化タンタルを主成分として形成されている。３は
信号線および電源等の導体層で、タングステンを主成分
として形成されており、絶縁セラミック層に形成された
ピアホール４を介して各層間が電気的に接続されている
。このように構成された多層セラミック基板上にはＩＳ
Ｉチップかマウン１〜出来るようにグイパット５および
ホンディングパット６が形成され、また基板裏面には、
この実装基板外に信号を取り出したり、基板内へ信号を
入れたりするためのＩ１０パッド７か形成されている。FIG. 1 shows an embodiment of the present invention. FIG. 1 is a schematic configuration diagram. In the figure, reference numeral 1 denotes an insulating ceramic layer, which is composed mainly of polycrystalline aluminum nitride. 2 is a resistor, which is formed mainly of tantalum nitride. Reference numeral 3 denotes a conductor layer for signal lines, a power supply, etc., which is mainly made of tungsten, and the layers are electrically connected through peer holes 4 formed in the insulating ceramic layer. IS on the multilayer ceramic substrate configured in this way.
Gui pads 5 and honding pads 6 are formed to allow I-chip mounting 1 to 1, and on the back side of the board,
An I10 pad 7 is formed for taking out signals from the outside of the mounting board and inputting signals into the board.
基板上にマウン１〜されているＬＳＩチップから発生す
る熱をグイパッド５を介してセラミック基板内へ拡散さ
せる。セラミック基板の熱伝導率か高いことにより熱拡
散か効率的に行われることになり、ＬＳＩチップの発熱
による高温化を防止することかできる。Heat generated from the LSI chip mounted on the substrate is diffused into the ceramic substrate via the guide pad 5. The high thermal conductivity of the ceramic substrate allows for efficient heat diffusion, making it possible to prevent the LSI chip from increasing in temperature due to heat generation.
本実施例の配線基板の製造方法は次のとおりである。The method for manufacturing the wiring board of this example is as follows.
本発明の基板を構成しているセラミック材料としては窒
化アルミニウムの焼結性を高めるため添加剤としてＣａ
Ｃ２を混入させている。まず窒化アルミニウム粉末とＣ
ａＣ２粉末とを秤量し、ボールミルにより有機溶媒中で
の湿式混合を４８時間行った。The ceramic material constituting the substrate of the present invention contains Ca as an additive to improve the sinterability of aluminum nitride.
Contains C2. First, aluminum nitride powder and C
aC2 powder was weighed and wet mixed in an organic solvent using a ball mill for 48 hours.
この混合粉末をポリカプロラクトン系あるいはポリアク
リレ−１〜系樹脂等の窒素雰囲気下で分解されやすい有
機バインダーとともに溶媒中に分散し、粘度３０００〜
７０００ｃＰｓの範囲の泥漿を作成する。This mixed powder is dispersed in a solvent together with an organic binder that easily decomposes in a nitrogen atmosphere, such as polycaprolactone-based or polyacrylate-1-based resin.
Create a slurry in the range of 7000 cPs.
該泥漿をキレスティング製膜法により１０〜２００ＩＪ
Ｊｎ程度の均一な厚みになるように有機フィルム上にグ
リーンシー１へを作製する。The slurry was heated to 10 to 200 IJ by the kissing film forming method.
Green Sea 1 is produced on an organic film so that it has a uniform thickness of approximately Jn.
次にこのグリーンシートを有機フィルムから剥離したの
ら、各層間を電気的に接続するためのピアホールを形成
する。ここで形成したピアホールは、機械的にポンチお
よびグイを用いて打扱いたが、他のレーザー加工等の方
法によっても開けることが可能である。Next, this green sheet is peeled off from the organic film, and then peer holes are formed to electrically connect each layer. The pier holes formed here were mechanically punched using a punch and a goo, but they can also be opened by other methods such as laser processing.
ピアホールの形成されたグリーンシー１〜上へ窒化タン
タルを主成分とした抵抗用ペース１〜とタングステンを
主成分とした導体用ペーストをスクリーン印刷法により
所定の位置に所定のパターンを印刷する。こうして抵抗
・導体を印刷したグリーンシートを所望の枚数積層し、
加熱プレスする。A predetermined pattern is printed at a predetermined position using a screen printing method using a resistor paste 1 containing tantalum nitride as a main component and a conductor paste containing tungsten as a main component on top of the green sea 1 in which a pier hole is formed. In this way, the desired number of green sheets printed with resistors and conductors are stacked,
Heat and press.
その後必要な形状になるようにカッターを用いて切断し
、１８００〜１９００℃の温度で非酸化性雰囲気中で焼
成する。焼成の際、その昇温過程で４００〜６００ ’
Ｃの非酸化性雰囲気下で保持して脱バインダーを充分に
行った。作製した基板の特性を第１表に示す。Thereafter, it is cut into the desired shape using a cutter and fired in a non-oxidizing atmosphere at a temperature of 1800 to 1900°C. During firing, the temperature rises to 400-600'
The binder was sufficiently removed by keeping it in a non-oxidizing atmosphere of C. Table 1 shows the characteristics of the manufactured substrate.
（以下余白）
なお、ここに示したＣａＣ２量は、窒化アルミニウムと
ＣａＣ２を合わ１↓た重量に対する値である。また、フ
リット量は導体何科もしくは抵抗材料と７１ノツ１〜何
判を合ね−Ｕ゛た重量に対しての値である。(Left below) Note that the amount of CaC2 shown here is a value relative to the weight of aluminum nitride and CaC2 combined by 1↓. Further, the amount of frit is a value based on the weight of the conductor or resistance material and the sum of 71 knots 1 to 71 knots -U゛.
表より従来用いられているアルミナ基板の熱伝導率は２
０Δ／ｍｋであるのに対し、本発明基板の熱伝導率は１
５０Ｗ／ｍｋ以上と非常に高いレベルにあることかわか
る。また作成した基板の電気的特性を測定した結果、絶
縁抵抗か１Ｘ１０１３Ωｃｍ以上であり誘電率は８．８
（１）ＩＨｚ ） 、誘電損失は１Ｘ１０−３以下（ｌ
Ｈｚ）であった。電気的特性においても従来の基板に対
して同程度以上あり実装基板として十分であることがわ
かった。From the table, the thermal conductivity of the conventionally used alumina substrate is 2
0Δ/mk, whereas the thermal conductivity of the substrate of the present invention is 1
It can be seen that it is at a very high level of 50W/mk or more. Also, as a result of measuring the electrical characteristics of the created board, the insulation resistance was 1 x 1013 Ωcm or more, and the dielectric constant was 8.8.
(1) IHz), dielectric loss is 1X10-3 or less (l
Hz). It was also found that the electrical properties of this product were on the same level or higher than those of conventional boards, making it sufficient for use as a mounting board.
［発明の効果］
以上説明したように、本発明によれば容易に抵抗体や信
号線、電源層等を含めた導体を有する高密度な回路を形
成することができると共に、熟成散性に対しても非常に
有効な高熱伝導多層セラミック配線基板が得られる。[Effects of the Invention] As explained above, according to the present invention, it is possible to easily form a high-density circuit having conductors including resistors, signal lines, power supply layers, etc., and to prevent aging dissipation. However, a highly effective multilayer ceramic wiring board with high thermal conductivity can be obtained.
第１図は本発明の一実施例を示ツ慨略構成図である。
１・・・絶縁セラミック層 ２・・・抵抗体３・・・導
体層 ４・・・ビアボール５・・・ダイパッ
ド
６・・・ホンディングパッド
７・・・Ｉ１０パッドFIG. 1 is a schematic configuration diagram showing one embodiment of the present invention. 1... Insulating ceramic layer 2... Resistor 3... Conductor layer 4... Via ball 5... Die pad 6... Honing pad 7... I10 pad
Claims (1)
多結晶体で構成され、主成分が窒化タンタルである抵抗
層を内部に有することを特徴とする高熱伝導多層セラミ
ック配線基板。(1) A highly thermally conductive multilayer ceramic wiring board characterized in that the ceramic layer is made of a polycrystalline material whose main component is aluminum nitride, and has a resistance layer whose main component is tantalum nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62126898A JPS63292693A (en) | 1987-05-26 | 1987-05-26 | Multilayered ceramic wiring substrate characterized by high heat conductivity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62126898A JPS63292693A (en) | 1987-05-26 | 1987-05-26 | Multilayered ceramic wiring substrate characterized by high heat conductivity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63292693A true JPS63292693A (en) | 1988-11-29 |
Family
ID=14946608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62126898A Pending JPS63292693A (en) | 1987-05-26 | 1987-05-26 | Multilayered ceramic wiring substrate characterized by high heat conductivity |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63292693A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02192198A (en) * | 1989-01-20 | 1990-07-27 | Nippon Cement Co Ltd | Multilayer interconnection board mounted with ic chip |
| JPH0332100A (en) * | 1989-06-29 | 1991-02-12 | Yokohama Rubber Co Ltd:The | Multilayer printed wiring board |
-
1987
- 1987-05-26 JP JP62126898A patent/JPS63292693A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02192198A (en) * | 1989-01-20 | 1990-07-27 | Nippon Cement Co Ltd | Multilayer interconnection board mounted with ic chip |
| JPH0332100A (en) * | 1989-06-29 | 1991-02-12 | Yokohama Rubber Co Ltd:The | Multilayer printed wiring board |
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