JPS63289918A - Ceramic capacitor - Google Patents
Ceramic capacitorInfo
- Publication number
- JPS63289918A JPS63289918A JP12626887A JP12626887A JPS63289918A JP S63289918 A JPS63289918 A JP S63289918A JP 12626887 A JP12626887 A JP 12626887A JP 12626887 A JP12626887 A JP 12626887A JP S63289918 A JPS63289918 A JP S63289918A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- oxide
- weight
- ceramic capacitor
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003985 ceramic capacitor Substances 0.000 title claims description 25
- 239000000843 powder Substances 0.000 claims abstract description 21
- 239000002887 superconductor Substances 0.000 claims abstract description 17
- 239000011521 glass Substances 0.000 claims abstract description 15
- 239000002245 particle Substances 0.000 claims abstract description 14
- 239000005388 borosilicate glass Substances 0.000 claims abstract description 9
- 229910052788 barium Inorganic materials 0.000 claims abstract description 6
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 3
- SHLNMHIRQGRGOL-UHFFFAOYSA-N barium zinc Chemical compound [Zn].[Ba] SHLNMHIRQGRGOL-UHFFFAOYSA-N 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 6
- 229910002113 barium titanate Inorganic materials 0.000 claims description 5
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 5
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 claims description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052691 Erbium Inorganic materials 0.000 claims description 2
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- JQJCSZOEVBFDKO-UHFFFAOYSA-N lead zinc Chemical compound [Zn].[Pb] JQJCSZOEVBFDKO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052761 rare earth metal Inorganic materials 0.000 claims 2
- 229910052689 Holmium Inorganic materials 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- 150000002910 rare earth metals Chemical class 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 6
- 239000002904 solvent Substances 0.000 abstract description 4
- 239000000654 additive Substances 0.000 abstract 1
- 230000000996 additive effect Effects 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 6
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 5
- 239000005751 Copper oxide Substances 0.000 description 4
- 229910000431 copper oxide Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910052727 yttrium Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000002562 thickening agent Substances 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- -1 and DY) Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 1
- CSSYLTMKCUORDA-UHFFFAOYSA-N barium(2+);oxygen(2-) Chemical class [O-2].[Ba+2] CSSYLTMKCUORDA-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 230000005292 diamagnetic effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、高周波において、広い温度範囲にわたって、
Ｑ値の優れたセラミックコンデンサに関するものである
。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention provides the following advantages:
The present invention relates to a ceramic capacitor with an excellent Q value.
従来の技術
従来のセラミックコンデンサとして、酸化チタン、チタ
ン酸バリウム、チタン酸ストロンチウム、チタン酸カル
シウム、チタン酸マグネシウム、亜鉛タンタル酸バリウ
ムと亜鉛ニオブ酸バリウム化合物、およびそれらの化合
物焼結体などに、Ａｇ、Ｐｔ、Ｐｄ他の電極材料を、ペ
ースト状として塗布し、焼き付けたものが知られている
。Conventional technology Conventional ceramic capacitors include titanium oxide, barium titanate, strontium titanate, calcium titanate, magnesium titanate, zinc barium tantalate, zinc barium niobate compounds, and sintered bodies of these compounds. , Pt, Pd, and other electrode materials are known to be applied in the form of a paste and baked.
これらのセラミックコンデンサは、大きな誘電率を有し
、また誘電体損失（ｔａｎδ）が小さく、コンデンサと
して優れた性質を有している。These ceramic capacitors have a large dielectric constant, a small dielectric loss (tan δ), and have excellent properties as a capacitor.
発明が解決しようとする問題点
しかし、これらのセラミックコンデンサも、１０Ｇ Ｈ
ｚ以上の高周波では、その性能に問題がある。Problems to be Solved by the Invention However, these ceramic capacitors also
At high frequencies above z, there are problems with its performance.
特性上張も問題となるのは、高周波における損失の増大
、すなわち、共振のＱ値の低下である。高周波における
Ｑ値は、誘電体および電極の両者が関与するものであり
、その組合せの最適化が最も重要である。A problem with the increase in characteristics is an increase in loss at high frequencies, that is, a decrease in the Q value of resonance. The Q value at high frequencies involves both the dielectric material and the electrodes, and optimization of the combination thereof is most important.
近年、高周波トランジスタとして、２次元電子ガスを用
いた、高移動度トランジスタが開発されており、このト
ランジスタの特性は、温度が低いほど優れている。した
がって、衛星通信などのように、高周波でかつ微弱な電
波を扱うような用途では、システム全体を低温に保って
おくような工夫もなされている。しかし、従来のセラミ
ックコンデンサでは、これによって高周波のＱ値が、大
幅に向上するようなものはない。In recent years, high-mobility transistors using two-dimensional electron gas have been developed as high-frequency transistors, and the characteristics of this transistor are better as the temperature is lower. Therefore, in applications such as satellite communications that handle high-frequency and weak radio waves, efforts are being made to keep the entire system at a low temperature. However, with conventional ceramic capacitors, there is no material that can significantly improve the high frequency Q value.
本発明はかかる点に爲みなされたもので、高周波におい
て、しかも広い温度範囲で、Ｑ値の優れたセラミックコ
ンデンサを提供することを目的としている。The present invention has been made with these points in mind, and it is an object of the present invention to provide a ceramic capacitor with an excellent Q value at high frequencies and over a wide temperature range.
問題点を解決するための手段
本発明は上記問題点を解決するため層状ペロブスカイト
構造型酸化物超電導体焼結体粉末粒子４０〜８３重量％
、ガラス成分２〜２２重量％と、金属成分１５〜３８重
量％からなる電極を有し、誘電体として酸化物焼結体を
用いたセラミックコンデンサを提供するものである。Means for Solving the Problems In order to solve the above problems, the present invention uses layered perovskite structure type oxide superconductor sintered powder particles of 40 to 83% by weight.
The present invention provides a ceramic capacitor having an electrode consisting of 2 to 22% by weight of a glass component and 15 to 38% by weight of a metal component, and using an oxide sintered body as a dielectric.
作用
本発明は、前記した構造により、広い温度範囲において
、高周波におけるＱ値の大きい、セラミックコンデンサ
を得ることができる。Effect of the Invention The present invention makes it possible to obtain a ceramic capacitor with a large Q value at high frequencies over a wide temperature range due to the above-described structure.
実施例
以下本発明の一実施例について、図面を参照しながら説
明する。EXAMPLE An example of the present invention will be described below with reference to the drawings.
（実施例１）
酸化イツトリウム（Ｙ２Ｏ２）、酸化バリウム（Ｂ ａ
Ｏ）と酸化銅（Ｃｕｂ）を、Ｙ、Ｂａ２Ｃｕ３の比で
含むようそれぞれ秤量し、混合の後、９５０℃の空気中
で５時間焼成する。これをもう一度粉砕、混合した後、
９５０℃の空気中で１０時間焼成する。これを再度粉砕
し、８３０℃の空気中で１時間焼成して焼結体粉末粒子
を得る。(Example 1) Yttrium oxide (Y2O2), barium oxide (Ba
O) and copper oxide (Cub) were weighed so as to contain Y and Ba2Cu3 in a ratio of Y and Ba2Cu3, and after mixing, they were fired in air at 950°C for 5 hours. After crushing and mixing this again,
Calcinate in air at 950°C for 10 hours. This is crushed again and fired in air at 830° C. for 1 hour to obtain sintered powder particles.
次に上記焼結体粉末粒子４０〜８３重量％と、硼珪酸鉛
ガラス粉末２〜２２重量％と、金属成分として銀粉末１
５〜３８重量％を、増粘剤を含む溶剤とまぜ、三段ロー
ラーで混練しペースト状とする。増粘剤および溶剤は、
ペーストの焼付時に飛散するものであれば特に制限はな
い。本実施例では、エチルセルローズをターピネオール
に溶解したものを用いた。固形物の５５〜９５重量％に
対して、増粘剤を含む溶剤が５〜４５重量％の間の範囲
が好ましい。Next, 40 to 83% by weight of the above sintered powder particles, 2 to 22% by weight of borosilicate lead glass powder, and 1 to 1 silver powder as a metal component.
5 to 38% by weight is mixed with a solvent containing a thickener and kneaded with a three-stage roller to form a paste. Thickeners and solvents are
There is no particular restriction as long as it scatters when the paste is baked. In this example, ethyl cellulose dissolved in terpineol was used. A preferred range is between 5 and 45% by weight of solvent containing thickener, based on 55 to 95% by weight of solids.
次に、あらかじめ１２００〜１４５０℃で焼結させた、
酸化チタン、チタン酸バリウム、チタン酸ストロンチウ
ム、チタン酸カルシウム、チタン酸マグネシウム、亜鉛
タンタル酸バリウムと亜鉛ニオブ酸バリウム化合物（Ｂ
ａ （Ｚｎ＋ｚ：＋Ｔａｚｚ：＋）Ｏ：＋−Ｂ ａ
（Ｚ ｎ＋ｚ：＋ Ｎ ｂｚｚ＋）０：＋ ）からなる
６種類の、直径５龍、厚み２１寵の円板状焼結体に、前
記ペーストを、スクリーン印刷法によって印刷し、約２
０μｍの厚膜をそれぞれの円板状焼結体両面に形成した
。その後、８００℃の空気中で１０分間焼き付は処理を
行い電極とした。Next, sintered in advance at 1200 to 1450°C,
Titanium oxide, barium titanate, strontium titanate, calcium titanate, magnesium titanate, zinc barium tantalate and zinc barium niobate compounds (B
a (Zn+z:+Tazz:+)O:+-B a
(Zn+z:+Nbzz+)0:+) The above paste was printed by a screen printing method on six types of disc-shaped sintered bodies with a diameter of 5mm and a thickness of 21cm, and
A 0 μm thick film was formed on both sides of each disk-shaped sintered body. Thereafter, the electrode was baked in air at 800° C. for 10 minutes.
このようにして得られたセラミックコンデンサの１４Ｇ
ＩＩｚにおけるＱ値を、７７にで測定した。また比較の
ために、それぞれの材料について、従来の銀電極を用い
たセラミックコンデンサのＱ値も測定した。その結果、
従来の銀電極（実施例と同一厚み）を用いたものでは、
１４Ｇｔｌｚにおいては、誘電体の損失よりも、電極で
の損失の方が圧倒的に大きく、どの誘電体材料について
も、はぼ電極の損失に対応したＱ値となっており、いず
れも１００以下であった。一方、本実施例では、７７に
で電極は超電等状態にあり、電極に係わる損失は、誘電
体の損失よりもはるかに少ないものとなっており、はぼ
誘電体の損失にのみ対応するＱ値が得られ、酸化チタン
、チタン酸バリウム、チタン酸ストロンチウム、チタン
酸カルシウムで５００以上、チタン酸マグネシウム、亜
鉛タンタル酸バリウムと亜鉛ニオブ酸バリウム化合物（
Ｂ ａ （Ｚ ｎ Ｉ／３ Ｔ ａ ２／３）０３−−
Ｂ ａ （Ｚ ｎ＋／３Ｎ ｂｚ／３）Ｏ：＋ ）で
は１０００以上のＱ値が得られた。14G of the ceramic capacitor thus obtained
The Q value at IIz was measured at 77. For comparison, the Q value of a ceramic capacitor using a conventional silver electrode was also measured for each material. the result,
In the case of using a conventional silver electrode (same thickness as in the example),
At 14Gtlz, the loss in the electrode is overwhelmingly larger than the loss in the dielectric, and for any dielectric material, the Q value corresponds to the loss in the electrode, and all of them are less than 100. there were. On the other hand, in this example, the electrode is in a superelectric state at 77, and the loss related to the electrode is much smaller than the loss in the dielectric, and the loss corresponds only to the loss in the dielectric. A Q value of 500 or more was obtained for titanium oxide, barium titanate, strontium titanate, calcium titanate, magnesium titanate, zinc barium tantalate and zinc barium niobate compound (
B a (Z n I/3 T a 2/3) 03--
For B a (Z n+/3N bz/3)O:+ ), a Q value of 1000 or more was obtained.
室温におけるＱ値は、従来のものに比べ遜色なかった。The Q value at room temperature was comparable to that of conventional products.
銀の量が、１５重量％以下になると、室温におけるＱ値
が低下した。これは室温における電極の抵抗値が高くな
るためによると考えられる。When the amount of silver was 15% by weight or less, the Q value at room temperature decreased. This is considered to be because the resistance value of the electrode becomes high at room temperature.
また３８重■％以上になると、７７ＫにおけるＱ値が低
下した。これは超電導特性に悪影響を及ぼすためと考え
られる。したがって、根の量としては１５〜３８重量％
の範囲が望ましい。すなわちこの範囲であれば、室温に
おいては、従来の特性“を保持し、超ｊＩＲｒＡ温度以
下では、従来のものよりも、はるかに優れたＱ値を有す
るコンデンサが得られる。Further, when the concentration exceeded 38% by weight, the Q value at 77K decreased. This is thought to be due to a negative effect on superconducting properties. Therefore, the amount of roots is 15-38% by weight.
range is desirable. In other words, within this range, a capacitor can be obtained that maintains the conventional characteristics at room temperature and has a Q value far superior to that of the conventional capacitor below the super-jIRrA temperature.
本実施例で用いられた電極の酸化物は、Ｘ線解析で調べ
たところ、層状ペロブスカイト構造を示していた。When the oxide of the electrode used in this example was examined by X-ray analysis, it was found to have a layered perovskite structure.
第１図は本発明の構造の一実施例を示したものである。FIG. 1 shows an embodiment of the structure of the present invention.
第１図において、■は酸化物焼結体誘電体、２は酸化物
超電導体と銀からなる電極である。In FIG. 1, ``■'' is an oxide sintered dielectric, and 2 is an electrode made of an oxide superconductor and silver.
第２図は、本実施例における電極用超電温体の結晶構造
の構成要素である、ペロブスカイト構造を示したもので
ある。図において、３にＣｕ、４に０，５にＹまたはＢ
ａが入ったもので、この構成要素がある周期をもって、
層状に積み重なったものである。実際の超電導体では、
この構造から、適当に酸素のぬけた酸素欠損型の構造に
なっていると考えられる。FIG. 2 shows a perovskite structure which is a constituent element of the crystal structure of the superelectric material for electrodes in this example. In the figure, 3 is Cu, 4 is 0, 5 is Y or B
A is included, and this component has a certain period,
It is made up of layers. In actual superconductors,
From this structure, it is thought that it has an oxygen-deficient structure in which oxygen is removed appropriately.
ガラス粉末の世が２重量％よりも少ないと電極の結合力
が弱く、強度的に実用的なものが得られなかった。また
２２重１％を越えると、電極として、室温および超電導
臨界温度以下の広い温度範囲にわたって、損失の小さい
ものを得るのが困難となった。したがって、ガラス成分
は、２２〜２重量％の範囲が好ましい。この範囲では焼
き付けた電極はいずれも７７にで超電導状態にあり、超
電導状態にある限り、Ｑ値に関し同一の結果が得られた
。If the amount of glass powder was less than 2% by weight, the bonding force of the electrode would be weak, making it impossible to obtain a material with a practical strength. Moreover, when the weight of 22 weight exceeds 1%, it becomes difficult to obtain an electrode with low loss over a wide temperature range from room temperature to below the superconducting critical temperature. Therefore, the glass component preferably ranges from 22 to 2% by weight. In this range, all baked electrodes were in a superconducting state at 77°C, and as long as they were in a superconducting state, the same results regarding the Q value were obtained.
ガラス成分として、硼珪酸鉛ガラス以外に、硼珪酸鉛亜
鉛ガラス、硼珪酸ビスマスガラスおよび硼珪酸バリウム
ガラスで本実施例と同様の結果が得られた。すなわちガ
ラスとしては、焼き付は温度で、溶融し接着の作用が有
り、焼き付は温度で電極材料と反応して、電極の超伝導
特性を損なうようなものでなければ良い。Results similar to those in this example were obtained using lead-zinc borosilicate glass, bismuth borosilicate glass, and barium borosilicate glass as glass components other than lead borosilicate glass. That is, as for glass, baking is caused by melting and adhesion at temperature, and baking does not need to react with the electrode material at temperature and impair the superconducting properties of the electrode.
金属材料として、銀基外に、白金、パラジウム、金で本
実施例と同様の結果が得られた。すなわち、金属材料と
して、焼き付は温度で、電極材料と反応して、電極の超
伝導特性を損なうようなものでなければ良い。Results similar to those in this example were obtained using platinum, palladium, and gold as metal materials in addition to silver. That is, as a metal material, it is sufficient that the seizure does not react with the electrode material at temperature and impair the superconducting properties of the electrode.
（実施例２）
酸化ランタン（Ｌａｚ ０３ ） 、酸化バリウム（Ｂ
ａ Ｏ）と酸化銅（Ｃｕｂ）を、Ｌ ａ １．８４、
Ｂ ａ ｏ、＋ｂＣｕ １の比で含むようそれぞれ秤量
し、混合の後、実施例１と同様にして、焼結体粉末粒子
を得た。(Example 2) Lanthanum oxide (Laz 03), barium oxide (B
a O) and copper oxide (Cub), L a 1.84,
B a o and +bCu were each weighed so as to be contained in a ratio of 1, and after mixing, sintered powder particles were obtained in the same manner as in Example 1.
次に、この原料粉末を電極材料として用いて、実施例１
と同様のプロセスを経て、セラミックコンデンサを形成
した。得られたセラミックコンデンサのＱ値を３０にと
室温で測定し、従来の銀電極のものと比較した結果、実
施例１と同様の結果が得られた。すなわちこの場合にも
、電極は臨界温度以下で超電導体となっており、本実施
例のものでは、電極損失が極めて低くなっており、良好
なＱ値が得られた。Next, using this raw material powder as an electrode material, Example 1
Ceramic capacitors were formed through a process similar to that of . The resulting ceramic capacitor had a Q value of 30, which was measured at room temperature and compared with that of a conventional silver electrode. As a result, the same results as in Example 1 were obtained. That is, in this case as well, the electrode becomes a superconductor at a temperature below the critical temperature, and in this example, the electrode loss was extremely low and a good Q value was obtained.
焼結体粉末粒子とガラス成分および金属成分の比を変え
て作成した結果は、やはり実施例１と同様であった。ま
たガラスの種類および金属の種類を変えた場合の結果も
同様であった。The results obtained by changing the ratio of the sintered body powder particles to the glass component and the metal component were the same as in Example 1. The results were also similar when the type of glass and the type of metal were changed.
電極の酸化物は、実施例１と同様、層状ペロブスカイト
構造である。The oxide of the electrode has a layered perovskite structure as in Example 1.
（実施例３）
希土類酸化物（Ｙｂ、Ｅｒ、Ｎｏ、ＤＹの酸化物）、酸
化バリウム（Ｂ ａ Ｏ）と酸化銅（Ｃｕ Ｏ）を、酸
化銅１に対し、希土類酸化物と酸化物バリウムが０．３
および０．７になるよう種々秤量し、混合の後、実施例
１と同様にして、焼結体粉末粒子を得た。(Example 3) Rare earth oxides (oxides of Yb, Er, No, and DY), barium oxide (Ba O), and copper oxide (Cu O) were added to 1 part of copper oxide, and rare earth oxides and barium oxides. is 0.3
After mixing, sintered powder particles were obtained in the same manner as in Example 1.
次に、この原料粉末を電極材料として用いて、実施例１
と同様のプロセスを経て、セラミックコンデンサを形成
した。得られたセラミックコンデンサのＱ値を５０にと
室温で測定し、従来の銀電極のものと比較した結果、実
施例１と同様の結果が得られた。すなわちこの場合にも
、電極は臨界温度以下で超電導体となっており、本実施
例のものでは、電極損失が極めて低くなっており、良好
なＱ値が得られた。Next, using this raw material powder as an electrode material, Example 1
Ceramic capacitors were formed through a process similar to that of . The resulting ceramic capacitor had a Q value of 50, which was measured at room temperature and compared with that of a conventional silver electrode. As a result, the same results as in Example 1 were obtained. That is, in this case as well, the electrode becomes a superconductor at a temperature below the critical temperature, and in this example, the electrode loss was extremely low and a good Q value was obtained.
焼結体粉末粒子とガラス成分および金属成分の比を変え
て作成した結果は、やはり実施例１と同様であった。ま
たガラスの種類および金属の種類を変えた場合の結果も
同様であった。The results obtained by changing the ratio of the sintered body powder particles to the glass component and the metal component were the same as in Example 1. The results were also similar when the type of glass and the type of metal were changed.
電極の酸化物は、実施例１と同様、層状ペロブスカイト
構造である。The oxide of the electrode has a layered perovskite structure as in Example 1.
以上述べた如（、本発明の方法によれば、広い温度範囲
において、高周波のＱ（ａの大きいセラミックコンデン
サを得ることができる。As described above, according to the method of the present invention, a ceramic capacitor with a high high frequency Q (a) can be obtained in a wide temperature range.
第２図は、実施例１の主権用超電導体の結晶構造につい
て、示したものであるが、実施例２〜３の場合の層状ペ
ロブスカイト構造は、この構造において、Ｙ、Ｂａの代
りに、それぞれの実施例で用いられた、Ｃｕ、Ｏ以外の
元素で置き代えたものである。FIG. 2 shows the crystal structure of the sovereign superconductor of Example 1, and the layered perovskite structures of Examples 2 and 3 each contain Y and Ba in place of Y and Ba, respectively. This is an example in which elements other than Cu and O used in the example were replaced.
本実施例の構造では、誘電体、超電導体電極ともに酸化
物であり、金属材料は貴金属である。そのため電極焼き
付けを、酸素を含む雰囲気、例えば空気中で行うことが
でき、電極としての超電導特性、および誘電体としての
誘電特性を損なうことなく作ることができる。In the structure of this example, both the dielectric material and the superconductor electrode are oxides, and the metal material is a noble metal. Therefore, electrode baking can be performed in an oxygen-containing atmosphere, for example, air, and the electrode can be produced without impairing the superconducting properties as an electrode and the dielectric properties as a dielectric.
また誘電体が酸化物焼結体であり、また電極も酸化物焼
結体を主成分とすることから、電極焼き付は時の誘電体
焼結体と電極とのなじみが極めて良く、焼き付は時の電
極剥離やクラック発生による、電極の超伝導臨界温度の
低下などの問題がみられなかった。このことから本実施
例の製造方法によれば、酸化物焼結体誘電体および層状
ペロブスカイト構造型酸化物超電導体の組合せについて
は、いずれの材料についても適用できるものである。例
えば、チタン酸バリウムとチタン酸ストロンチウムの化
合物、チタン酸ストロンチウムとチタン酸カルシウムの
化合物を誘電体として用いた場合も、同様の結果の得ら
れるものである。In addition, since the dielectric is an oxide sintered body and the electrode is also mainly composed of an oxide sintered body, the compatibility between the dielectric sintered body and the electrode is extremely good, which prevents the electrode from burning. No problems such as a decrease in the superconducting critical temperature of the electrode due to electrode peeling or cracking were observed. Therefore, the manufacturing method of this example can be applied to any combination of the sintered oxide dielectric and the layered perovskite structure type oxide superconductor. For example, similar results can be obtained when a compound of barium titanate and strontium titanate or a compound of strontium titanate and calcium titanate is used as the dielectric.
また本実施例では、誘電体の厚み、および電極用酸化物
超電導体の厚みとして特定の値を用いたが、誘電体の厚
みは任意であり、また電極の厚みは、ペーストの粘度、
印刷に使うスクリーンの目の粗さなどを変えることによ
り数μｍから１０００μｍ程度の厚みが任意に得られる
。Further, in this example, specific values were used for the thickness of the dielectric and the thickness of the oxide superconductor for the electrode, but the thickness of the dielectric is arbitrary, and the thickness of the electrode is determined by the viscosity of the paste,
By changing the roughness of the screen used for printing, the thickness can be arbitrarily obtained from several μm to about 1000 μm.
また本実施例では、いずれの実施例においても、酸化物
焼結体粉末の結晶構造をＸ線解析した結果、粉末の状態
ですでに層状ペロブスカイト構造を有しており、また磁
化率の測定から、反磁性が観測され、すでに超電導体状
態の粉末粒子となっていることがわかった。そのため焼
き付は温度は低く、また焼き付は時間も短く、これによ
り、ガラス成分が、超電導体成分に悪影響を及ぼすこと
なく、酸化物超電導体電極が得られている。In addition, in all of these examples, as a result of X-ray analysis of the crystal structure of the oxide sintered body powder, it was found that the powder state already has a layered perovskite structure, and from the measurement of magnetic susceptibility, , diamagnetic properties were observed, indicating that the powder particles were already in a superconducting state. Therefore, the baking temperature is low and the baking time is short, and as a result, an oxide superconductor electrode can be obtained without the glass component having an adverse effect on the superconductor component.
本発明のセラミックコンデンサは、広い温度範囲におい
て、高周波におけるＱ値が掻めて優れており、２次元電
子ガスを用いた、高移動度トランジスタを用いた、高周
波トランジスタ等と組合せて使用することにより、きわ
めて性能の良い、増幅器、発振器等を構成できるもので
ある。The ceramic capacitor of the present invention has an excellent Q value at high frequencies over a wide temperature range, and can be used in combination with high-frequency transistors using two-dimensional electron gas, high mobility transistors, etc. , it is possible to construct amplifiers, oscillators, etc. with extremely high performance.
発明の効果
以上述べた如く、本発明は、層状ペロブスカイト構造型
酸化物超電導体焼結粉末粒子４０〜８３重量％と、ガラ
ス成分２〜２２重量％と、金属成分１５〜３８重量％か
らなる電極を有し、誘電体として酸化物焼結体を用いた
セラミックコンデンサを提供するものである。Effects of the Invention As described above, the present invention provides an electrode comprising 40 to 83% by weight of layered perovskite structure type oxide superconductor sintered powder particles, 2 to 22% by weight of a glass component, and 15 to 38% by weight of a metal component. The present invention provides a ceramic capacitor having a sintered oxide body as a dielectric material.
【図面の簡単な説明】
第１図は本発明の構造の一実施例を示す構造図、第２図
は本発明に用いた酸化物超電導体の結晶構造である層状
ペロブスカイト構造の、構成要素であるペロブスカイト
構造を示した構造図である。
１・・・・・・酸化物焼結体誘電体、２・・・・・・酸
化物超電導体を含む電極、３・・・・・・Ｃｕ、４・・
・・・・０．５・・・・・・ＹまたはＢａ。[Brief Description of the Drawings] Figure 1 is a structural diagram showing an example of the structure of the present invention, and Figure 2 is a structural diagram showing the constituent elements of the layered perovskite structure, which is the crystal structure of the oxide superconductor used in the present invention. FIG. 2 is a structural diagram showing a certain perovskite structure. 1... Oxide sintered dielectric, 2... Electrode containing oxide superconductor, 3... Cu, 4...
...0.5...Y or Ba.
Claims (5)
粉末粒子４０〜８３重量％と、ガラス成分２〜２２重量
％と、金属成分１５〜３８重量％からなる電極を有し、
誘電体として酸化物焼結体を用いたことを特徴とするセ
ラミックコンデンサ。(1) having an electrode consisting of 40 to 83% by weight of layered perovskite structure type oxide superconductor sintered powder particles, 2 to 22% by weight of a glass component, and 15 to 38% by weight of a metal component;
A ceramic capacitor characterized by using a sintered oxide as a dielectric.
粉末粒子として、Ａ−Ｂａ−Ｃｕ酸化物（但しＡは、Ｙ
、希土類）を用いたことを特徴とする特許請求の範囲第
（１）項記載のセラミックコンデンサ。(2) A-Ba-Cu oxide (where A is Y
The ceramic capacitor according to claim (1), characterized in that the ceramic capacitor uses a ceramic capacitor (such as a rare earth metal).
用いたことを特徴とする特許請求の範囲第（２）項記載
のセラミックコンデンサ。(3) The ceramic capacitor according to claim (2), wherein La, Yb, Er, Ho, or Dy is used as the rare earth element.
鉛ガラス、硼珪酸ビスマスガラス、硼珪酸バリウムガラ
スを用いたことを特徴とする特許請求の範囲第（１）項
記載のセラミックコンデンサ。(4) The ceramic capacitor according to claim (1), characterized in that lead borosilicate glass, lead zinc borosilicate glass, bismuth borosilicate glass, or barium borosilicate glass is used as the glass component.
酸バリウム、チタン酸ストロンチウム、チタン酸カルシ
ウム、チタン酸マグネシウム、亜鉛タンタル酸バリウム
と亜鉛ニオブ酸バリウム化合物、およびそれらの化合物
を用いたことを特徴とする特許請求の範囲第（１）項記
載のセラミックコンデンサ。(5) Titanium oxide, barium titanate, strontium titanate, calcium titanate, magnesium titanate, zinc barium tantalate, zinc barium niobate compounds, and compounds thereof were used as the oxide sintered dielectric. A ceramic capacitor according to claim (1), characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12626887A JPH0793234B2 (en) | 1987-05-22 | 1987-05-22 | Ceramic capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12626887A JPH0793234B2 (en) | 1987-05-22 | 1987-05-22 | Ceramic capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63289918A true JPS63289918A (en) | 1988-11-28 |
| JPH0793234B2 JPH0793234B2 (en) | 1995-10-09 |
Family
ID=14930981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12626887A Expired - Lifetime JPH0793234B2 (en) | 1987-05-22 | 1987-05-22 | Ceramic capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0793234B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02235318A (en) * | 1989-03-08 | 1990-09-18 | Matsushita Electric Ind Co Ltd | Laminated ceramic capacitor |
| US6690567B1 (en) | 2002-09-26 | 2004-02-10 | Ceramphysics, Inc. | Capacitive energy storage device |
-
1987
- 1987-05-22 JP JP12626887A patent/JPH0793234B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02235318A (en) * | 1989-03-08 | 1990-09-18 | Matsushita Electric Ind Co Ltd | Laminated ceramic capacitor |
| US6690567B1 (en) | 2002-09-26 | 2004-02-10 | Ceramphysics, Inc. | Capacitive energy storage device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0793234B2 (en) | 1995-10-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3305626B2 (en) | Dielectric porcelain composition and ceramic electronic component using this dielectric porcelain composition | |
| JP2000044341A (en) | Dielectric ceramic composition | |
| US5750452A (en) | Dielectric ceramic composition for microwave | |
| US5006956A (en) | Dielectric ceramic composition | |
| JPS63289918A (en) | Ceramic capacitor | |
| JP5283813B2 (en) | Dielectric ceramic material containing silver, niobium and tantalum | |
| US6406791B1 (en) | Multiphase dielectric composition and multilayered device incorporating the same | |
| JPS63289917A (en) | Ceramic capacitor | |
| JPH11340090A (en) | Manufacture of grain boundary insulated multilayer ceramic capacitor | |
| KR910001347B1 (en) | Ultra-low fire ceramic compositions and method for producing thereof | |
| JPS63312616A (en) | Semiconductor porcelain composition | |
| JPS63293910A (en) | Ceramic capacitor and manufacture thereof | |
| JPH0251806A (en) | Superconducting ceramic laminated body and manufacture thereof | |
| JPH05290625A (en) | Dielectric porcelain composition and manufacture thereof | |
| JPS63266717A (en) | Manufacture of thick film oxide superconductor | |
| JPH08268754A (en) | Dielectric ceramic composition for microwave | |
| JP2725372B2 (en) | Dielectric porcelain composition | |
| JPH0256977A (en) | Dielectric filter | |
| JP3000821B2 (en) | Manufacturing method of ceramic capacitor | |
| JP2937039B2 (en) | Semiconductor porcelain composition and method for producing the same | |
| JPS63293909A (en) | Ceramic capacitor and manufacture thereof | |
| JP2998586B2 (en) | Semiconductor porcelain composition and method for producing the same | |
| JPS6029211B2 (en) | Manufacturing method of semiconductor ceramic capacitor | |
| JPH0316952A (en) | Porcelain composition | |
| JPS633442B2 (en) |