JPS63287077A - Photoelectric conversion device - Google Patents
Photoelectric conversion deviceInfo
- Publication number
- JPS63287077A JPS63287077A JP62121219A JP12121987A JPS63287077A JP S63287077 A JPS63287077 A JP S63287077A JP 62121219 A JP62121219 A JP 62121219A JP 12121987 A JP12121987 A JP 12121987A JP S63287077 A JPS63287077 A JP S63287077A
- Authority
- JP
- Japan
- Prior art keywords
- regions
- layer
- forming
- photoelectric conversion
- finger
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims 1
- 239000000969 carrier Substances 0.000 abstract description 7
- 239000002131 composite material Substances 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- -1 BF2 ions Chemical class 0.000 abstract 1
- 230000004913 activation Effects 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 230000003449 preventive effect Effects 0.000 abstract 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光電変換デバイスに係わり、特に高効率太陽
電池の構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photoelectric conversion device, and particularly to the structure of a high-efficiency solar cell.
光電変換デバイスの光電変換効率を向上させるため、光
が入射しない表面に正負の電極を設け、電極による入射
光の吸収による損失を除去した。In order to improve the photoelectric conversion efficiency of the photoelectric conversion device, positive and negative electrodes were provided on the surface where light does not enter, thereby eliminating loss due to absorption of incident light by the electrodes.
いわゆる裏面接合型光電変換デバイスがあり、さらに、
入射光により生成した少数キャリアが再結合しやすい電
極と半導体との界面(コンタクト)の接触面積を小さく
した。いわゆる点状コンタクト型に関する研究がある(
アイ・イー・イー・イー、エレクトロン デバイス レ
ター、第ED−6、第405頁、1985年(R,A、
5intonet al、 I E E
E Electron Devices L
etters。There are so-called back-side bonding photoelectric conversion devices, and
The contact area of the interface (contact) between the electrode and semiconductor, where minority carriers generated by incident light are likely to recombine, has been reduced. There is research on the so-called point contact type (
I.E.E., Electron Device Letters, No. ED-6, p. 405, 1985 (R,A,
5intonet al, I E E
E Electron Devices L
etters.
Vol、ED−6,No、8. (1985) P、
405)および米国特許第4,234.352号(US
P4.234,352)参照)。Vol. ED-6, No. 8. (1985) P.
405) and U.S. Pat. No. 4,234.352 (U.S.
See P4.234, 352)).
この太陽電池では、光入射側に、光を速切る電極や、高
濃度の不純物を含む半導体領域がなく、これらはすべて
光入射側とは反対の裏面側に形成されているので変換効
率が高い、その裏面の平面構造図を第3図に示す、フィ
ンガー状電極3および4の下に、絶縁層(図示されない
)を介してそれぞれ点状N+もしくはP十形半導体層が
形成され、該絶縁層に設けられた孔1および2を介して
該電極と該半導体とは点状でコンタクトしている。This solar cell has no electrodes that quickly cut off light or semiconductor regions containing high concentration of impurities on the light incidence side, and these are all formed on the back side opposite to the light incidence side, resulting in high conversion efficiency. , a plan view of the back surface thereof is shown in FIG. 3. Under the finger-shaped electrodes 3 and 4, a dotted N+ or P-decade semiconductor layer is formed, respectively, via an insulating layer (not shown), and the insulating layer The electrode and the semiconductor are in point contact through holes 1 and 2 provided in the electrode.
このようにすると半導体と電極との接触面積が小さいた
め、電極で消滅する少数キャリア量が減少するので効率
がよくなる。In this case, since the contact area between the semiconductor and the electrode is small, the amount of minority carriers annihilated at the electrode is reduced, resulting in improved efficiency.
上記従来技術は、少数キャリア(p型半導体の場合は電
子、n型半導体の場合は正孔)を収集する電極コンタク
トが点状で、面積が小さいため、電子の収集能力が小さ
く、充分な効率向上が図れない可能性がある。In the above conventional technology, the electrode contacts that collect minority carriers (electrons in the case of p-type semiconductors, holes in the case of n-type semiconductors) are dot-like and have a small area, so the ability to collect electrons is small and sufficient efficiency is not achieved. There is a possibility that no improvement can be made.
本発明の目的は、上記問題点を解決して、より高効率の
太陽電池の構造を提案することにある。An object of the present invention is to solve the above problems and propose a structure for a solar cell with higher efficiency.
上記目的は、半導体を電極とのコンタクト領域の一方を
フィンガー状にすることにより、達成される。特に正極
側電極コンタクトを点状にして電子の再結合を少なくし
、負極側電極コンタクトをフィンガー状にして面積を大
きくして電子の収集をよくすることによる。The above object is achieved by forming one of the contact regions of the semiconductor with the electrode into a finger shape. In particular, the positive electrode contact is made dot-shaped to reduce recombination of electrons, and the negative electrode contact is made finger-shaped to increase the area and improve collection of electrons.
少数キャリアを収集する電極と半導体とのコンタクト領
域を、フィンガー状にしてこれと電極との接触面積を増
加したことにより、この領域を経由して電極に達した電
子は、多量に電極に流入することができる。したがって
、光電変換効率は増加する。By making the contact area between the electrode and the semiconductor that collects minority carriers finger-shaped to increase the contact area between this and the electrode, a large amount of electrons that reach the electrode via this area flow into the electrode. be able to. Therefore, photoelectric conversion efficiency increases.
以下、本発明の一実施例を第1図と第2図により説明す
る。第1図は裏面構造、第2図は第1図のA−A’部の
断面図である。An embodiment of the present invention will be described below with reference to FIGS. 1 and 2. FIG. 1 is a back structure, and FIG. 2 is a sectional view taken along line AA' in FIG. 1.
比抵抗5Ω・cmのP形半導体層11の面を酸化して、
表と裏面に酸化膜9と10を形成する。裏面の酸化膜9
にホトリソグラフィを用いてレジストマスクを形成し、
これをマスクにしてN十形半導体領域5を形成するため
のフィンガー状溝、及びP十形半導体領域6形成用の穴
を開ける。さらにレジストマスクをマスクとして、各々
の半導体領域形成穴にp及びBF、イオンを打込んで、
N+とP小領域を形成する。続いて900℃で30分間
の熱処理を行って打込み層の活性化処理を行い、N十形
半導体領域5及びP十形半導体領域6が完成する。次に
ホトリソグラフィと真空蒸着法を用い、各半導体領域5
と6上にT i / A gの複合フィンガー状電極を
形成する。更に、効率向上を図る場合は、裏面の光入射
面上にMgF2/ T i O2の2層反射防止膜、又
は周知のテクスチャー面を形成後酸化膜及び反射防止膜
などの反射防止膜10を形成する。Oxidizing the surface of the P-type semiconductor layer 11 with a specific resistance of 5 Ω·cm,
Oxide films 9 and 10 are formed on the front and back surfaces. Oxide film 9 on the back side
Form a resist mask using photolithography,
Using this as a mask, finger-shaped grooves for forming the N-type semiconductor region 5 and holes for forming the P-type semiconductor region 6 are created. Furthermore, using the resist mask as a mask, p and BF ions were implanted into each semiconductor region forming hole.
Form N+ and P small regions. Subsequently, a heat treatment is performed at 900° C. for 30 minutes to activate the implanted layer, and the N+ type semiconductor region 5 and the P+ type semiconductor region 6 are completed. Next, using photolithography and vacuum evaporation, each semiconductor region 5 is
and 6 to form a composite finger-shaped electrode of T i /A g. Furthermore, if efficiency is to be improved, a two-layer antireflection film of MgF2/TiO2 or a well-known textured surface is formed on the light incident surface on the back surface, and then an antireflection film 10 such as an oxide film and an antireflection film is formed. do.
本発明によれば、バルク半導体層からPN接合領域への
少数キャリアの収集、取込みが有効に行われ、かつ直列
抵抗の小さい構造を提供できる。According to the present invention, it is possible to provide a structure in which minority carriers are effectively collected and taken into the PN junction region from the bulk semiconductor layer and the series resistance is small.
従って、変換効率の大きい光電変換デバイスを提供でき
るのみならず高性能化と小型化に寄与できる効果がある
。Therefore, it is possible not only to provide a photoelectric conversion device with high conversion efficiency, but also to contribute to higher performance and smaller size.
第1図と第2図は、本発明の詳細な説明するための図、
および第3図は従来技術を説明するための図である。1 and 2 are diagrams for explaining the present invention in detail,
and FIG. 3 are diagrams for explaining the prior art.
Claims (1)
、裏面と記す)にN^+層およびP^+層を交差指状に
有し、該裏面上に、該N^+層もしくはP^+層のいず
れか一方の層上に、該層の面積より小さい面積の点状孔
を有し、他方の層の層上に、該層の面積より小さい面積
のフィンガー状孔(貫通溝)を有する絶縁膜を有し、そ
の上に、該孔を介して該N^+層もしくはP^+層とコ
ンタクトする交差指状電極を有することを特徴とする光
電変換デバイス。1. A semiconductor substrate has an N^+ layer and a P^+ layer in an interdigital pattern on the surface opposite to the light incident surface (hereinafter referred to as the back surface), and the N^+ layer is formed on the back surface. On either the layer or the P^+ layer, there are point-like holes with an area smaller than the area of the layer, and on the other layer, there are finger-like holes (with an area smaller than the area of the layer). 1. A photoelectric conversion device comprising: an insulating film having an insulating film (a through hole), and interdigital electrodes on the insulating film, which contact the N^+ layer or the P^+ layer through the hole.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62121219A JPS63287077A (en) | 1987-05-20 | 1987-05-20 | Photoelectric conversion device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62121219A JPS63287077A (en) | 1987-05-20 | 1987-05-20 | Photoelectric conversion device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63287077A true JPS63287077A (en) | 1988-11-24 |
JPH0513544B2 JPH0513544B2 (en) | 1993-02-22 |
Family
ID=14805837
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62121219A Granted JPS63287077A (en) | 1987-05-20 | 1987-05-20 | Photoelectric conversion device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63287077A (en) |
Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03165578A (en) * | 1989-11-24 | 1991-07-17 | Hitachi Ltd | Solar cell and manufacture thereof |
JPH03203273A (en) * | 1989-12-28 | 1991-09-04 | Hamamatsu Photonics Kk | Pin photodiode |
JP2004512674A (en) * | 2000-09-22 | 2004-04-22 | ウニベルジテート コンスタンツ | Solar cell manufacturing method, and solar cell manufactured by the method |
JP2005340362A (en) * | 2004-05-25 | 2005-12-08 | Sharp Corp | Solar cell and solar cell module |
JP2006303322A (en) * | 2005-04-22 | 2006-11-02 | Sharp Corp | Solar cell |
JP2006324590A (en) * | 2005-05-20 | 2006-11-30 | Sharp Corp | Back side electrode type solar cell and method for manufacturing thereof |
CN101174596A (en) * | 2006-10-30 | 2008-05-07 | 信越化学工业株式会社 | Method for producing single crystal silicon solar cell and single crystal silicon solar cell |
JP2008112840A (en) * | 2006-10-30 | 2008-05-15 | Shin Etsu Chem Co Ltd | Single crystal silicon solar cell and process for manufacturing same |
JP2008131002A (en) * | 2006-11-24 | 2008-06-05 | Shin Etsu Chem Co Ltd | Manufacturing method of single-crystal silicon solar cell, and the cell |
WO2009019940A1 (en) * | 2007-08-07 | 2009-02-12 | Sharp Kabushiki Kaisha | Solar cell module |
JP2009071339A (en) * | 2009-01-07 | 2009-04-02 | Sharp Corp | Solar battery cell and solar battery module |
JP2010522976A (en) * | 2007-03-28 | 2010-07-08 | コミツサリア タ レネルジー アトミーク | Photovoltaic device having discontinuous heterojunction structure meshing with each other |
JP2010283406A (en) * | 2010-09-28 | 2010-12-16 | Sanyo Electric Co Ltd | Solar cell |
JP2011507245A (en) * | 2007-12-11 | 2011-03-03 | インスティトュート フィュル ゾラールエネルギーフォルシュング ゲーエムベーハー | Back electrode type solar cell having elongated, interdigitated emitter region and base region on back side, and manufacturing method thereof |
JP2011513997A (en) * | 2008-03-05 | 2011-04-28 | ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド | Use of solar cell chain injection |
US8021910B2 (en) | 2006-10-30 | 2011-09-20 | Shin-Etsu Chemical Co., Ltd. | Method for producing single crystal silicon solar cell and single crystal silicon solar cell |
US8030118B2 (en) | 2006-10-30 | 2011-10-04 | Shin-Etsu Chemical Co., Ltd. | Method for producing single crystal silicon solar cell and single crystal silicon solar cell |
US8106290B2 (en) | 2007-03-07 | 2012-01-31 | Shin-Etsu Chemical Co., Ltd. | Method for manufacturing single crystal silicon solar cell and single crystal silicon solar cell |
US8129612B2 (en) | 2007-04-09 | 2012-03-06 | Shin-Etsu Chemical Co., Ltd. | Method for manufacturing single-crystal silicon solar cell and single-crystal silicon solar cell |
JP2013008983A (en) * | 2004-06-04 | 2013-01-10 | Sunpower Corp | Interconnection of solar cells in solar cell module |
JP2013073971A (en) * | 2011-09-26 | 2013-04-22 | Dexerials Corp | Solar cell module and method for manufacturing solar cell module |
US9246034B2 (en) | 2008-09-29 | 2016-01-26 | Panasonic Intellectual Property Management Co., Ltd. | Solar cell and method of manufacturing the same |
CN111785807A (en) * | 2020-08-11 | 2020-10-16 | 山东傲天环保科技有限公司 | PIN photoelectric device and manufacturing method thereof |
WO2021103300A1 (en) * | 2019-11-29 | 2021-06-03 | 武汉华星光电技术有限公司 | Photodiode and preparation method therefor |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5462044U (en) * | 1977-10-12 | 1979-05-01 |
-
1987
- 1987-05-20 JP JP62121219A patent/JPS63287077A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5462044U (en) * | 1977-10-12 | 1979-05-01 |
Cited By (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03165578A (en) * | 1989-11-24 | 1991-07-17 | Hitachi Ltd | Solar cell and manufacture thereof |
JPH03203273A (en) * | 1989-12-28 | 1991-09-04 | Hamamatsu Photonics Kk | Pin photodiode |
JP2004512674A (en) * | 2000-09-22 | 2004-04-22 | ウニベルジテート コンスタンツ | Solar cell manufacturing method, and solar cell manufactured by the method |
JP2005340362A (en) * | 2004-05-25 | 2005-12-08 | Sharp Corp | Solar cell and solar cell module |
JP2013008983A (en) * | 2004-06-04 | 2013-01-10 | Sunpower Corp | Interconnection of solar cells in solar cell module |
JP2006303322A (en) * | 2005-04-22 | 2006-11-02 | Sharp Corp | Solar cell |
JP4641858B2 (en) * | 2005-04-22 | 2011-03-02 | シャープ株式会社 | Solar cell |
JP2006324590A (en) * | 2005-05-20 | 2006-11-30 | Sharp Corp | Back side electrode type solar cell and method for manufacturing thereof |
JP2008112848A (en) * | 2006-10-30 | 2008-05-15 | Shin Etsu Chem Co Ltd | Process for manufacturing single crystal silicon solar cell and single crystal silicon solar cell |
US8227289B2 (en) | 2006-10-30 | 2012-07-24 | Shin-Etsu Chemical Co., Ltd. | Method for producing single crystal silicon solar cell and single crystal silicon solar cell |
CN101174596A (en) * | 2006-10-30 | 2008-05-07 | 信越化学工业株式会社 | Method for producing single crystal silicon solar cell and single crystal silicon solar cell |
US8227290B2 (en) | 2006-10-30 | 2012-07-24 | Shin-Etsu Chemical Co., Ltd. | Method for producing single crystal silicon solar cell and single crystal silicon solar cell |
US8030118B2 (en) | 2006-10-30 | 2011-10-04 | Shin-Etsu Chemical Co., Ltd. | Method for producing single crystal silicon solar cell and single crystal silicon solar cell |
US8021910B2 (en) | 2006-10-30 | 2011-09-20 | Shin-Etsu Chemical Co., Ltd. | Method for producing single crystal silicon solar cell and single crystal silicon solar cell |
JP2008112840A (en) * | 2006-10-30 | 2008-05-15 | Shin Etsu Chem Co Ltd | Single crystal silicon solar cell and process for manufacturing same |
JP2008131002A (en) * | 2006-11-24 | 2008-06-05 | Shin Etsu Chem Co Ltd | Manufacturing method of single-crystal silicon solar cell, and the cell |
US8119903B2 (en) | 2006-11-24 | 2012-02-21 | Shin-Etsu Chemical Co., Ltd. | Method of manufacturing single crystal silicon solar cell and single crystal silicon solar cell |
US8106290B2 (en) | 2007-03-07 | 2012-01-31 | Shin-Etsu Chemical Co., Ltd. | Method for manufacturing single crystal silicon solar cell and single crystal silicon solar cell |
JP2010522976A (en) * | 2007-03-28 | 2010-07-08 | コミツサリア タ レネルジー アトミーク | Photovoltaic device having discontinuous heterojunction structure meshing with each other |
US8723023B2 (en) | 2007-03-28 | 2014-05-13 | Commissariat A L'energie Atomique | Photovoltaic device with a discontinuous interdigitated heterojunction structure |
US8129612B2 (en) | 2007-04-09 | 2012-03-06 | Shin-Etsu Chemical Co., Ltd. | Method for manufacturing single-crystal silicon solar cell and single-crystal silicon solar cell |
EP2180521A4 (en) * | 2007-08-07 | 2014-09-10 | Sharp Kk | Solar cell module |
EP2180521A1 (en) * | 2007-08-07 | 2010-04-28 | Sharp Kabushiki Kaisha | Solar cell module |
JP2009043842A (en) * | 2007-08-07 | 2009-02-26 | Sharp Corp | Solar battery module |
WO2009019940A1 (en) * | 2007-08-07 | 2009-02-12 | Sharp Kabushiki Kaisha | Solar cell module |
JP2011507245A (en) * | 2007-12-11 | 2011-03-03 | インスティトュート フィュル ゾラールエネルギーフォルシュング ゲーエムベーハー | Back electrode type solar cell having elongated, interdigitated emitter region and base region on back side, and manufacturing method thereof |
JP2011513997A (en) * | 2008-03-05 | 2011-04-28 | ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド | Use of solar cell chain injection |
US9246034B2 (en) | 2008-09-29 | 2016-01-26 | Panasonic Intellectual Property Management Co., Ltd. | Solar cell and method of manufacturing the same |
JP2009071339A (en) * | 2009-01-07 | 2009-04-02 | Sharp Corp | Solar battery cell and solar battery module |
JP2010283406A (en) * | 2010-09-28 | 2010-12-16 | Sanyo Electric Co Ltd | Solar cell |
JP2013073971A (en) * | 2011-09-26 | 2013-04-22 | Dexerials Corp | Solar cell module and method for manufacturing solar cell module |
WO2021103300A1 (en) * | 2019-11-29 | 2021-06-03 | 武汉华星光电技术有限公司 | Photodiode and preparation method therefor |
CN111785807A (en) * | 2020-08-11 | 2020-10-16 | 山东傲天环保科技有限公司 | PIN photoelectric device and manufacturing method thereof |
CN111785807B (en) * | 2020-08-11 | 2022-10-18 | 今上半导体(信阳)有限公司 | PIN photoelectric device and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
JPH0513544B2 (en) | 1993-02-22 |
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Legal Events
Date | Code | Title | Description |
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LAPS | Cancellation because of no payment of annual fees |