JPS63283174A - Light emitting diode - Google Patents

Light emitting diode

Info

Publication number
JPS63283174A
JPS63283174A JP62119299A JP11929987A JPS63283174A JP S63283174 A JPS63283174 A JP S63283174A JP 62119299 A JP62119299 A JP 62119299A JP 11929987 A JP11929987 A JP 11929987A JP S63283174 A JPS63283174 A JP S63283174A
Authority
JP
Japan
Prior art keywords
light emitting
emitting diode
lens
resin
transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62119299A
Other languages
Japanese (ja)
Inventor
Tomoyuki Nakai
智之 中井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Tateisi Electronics Co filed Critical Omron Tateisi Electronics Co
Priority to JP62119299A priority Critical patent/JPS63283174A/en
Publication of JPS63283174A publication Critical patent/JPS63283174A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

PURPOSE:To uniformize quality and to enhance reliability by injecting transparent resin on the light emitting face of an LED chip to integrally form a Fresnel type lens. CONSTITUTION:A dam 14 is formed on the upper surface of an LED chip 12 of two layers attached through an electrode on a substrate 11. An ultraviolet curable resin 15 is injected, pressed in a molding transparent die 16, an ultraviolet ray from a light source 17 is irradiated from the upper face of the die 16 to form a Fresnel lens 15a, and the dam 14 and the die 16 are removed. With this configuration, an LED having a sole pattern at the center is easily formed, without irregular quality. Further, a transparent thermosetting resin may be used and heated to form a lens.

Description

【発明の詳細な説明】 〔発明の分野〕 本発明はチップ上にレンズを一体に成形した発光ダイオ
ードに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of the Invention] The present invention relates to a light emitting diode in which a lens is integrally molded on a chip.

〔従来技術とその問題点〕[Prior art and its problems]

（従来技術） 従来発光ダイオードには光の出射方向を一定の方向に集
光させるためにチップの上部にレンズを付加したものが
用いられている。第５図及び第６図はこれらのレンズを
付加した発光ダイオード及びその発光パターンを示す図
である（１９８６年７月号１機能材料、第６８頁）。第
５図ではステム１上には発光ダイオード２のチップが設
けられており、その上部には半球状の樹脂製レンズ３が
ステム１上に一体に成形される。又第６図に示すように
ステム１上に発光ダイオ−′ド２のチップを取付け、そ
の上部に球レンズ４を設けると共に、球レンズ４の部分
のみに円形の開口を有するフラットレンズ５を設け、そ
の中心からのみ光を出射させるようにした発光ダイオー
ドも知られている。(Prior Art) Conventionally, light emitting diodes have been used in which a lens is added to the top of a chip in order to condense light in a fixed direction. FIGS. 5 and 6 are diagrams showing a light emitting diode to which these lenses are added and its light emitting pattern (Functional Materials, July 1986 issue, p. 68). In FIG. 5, a light emitting diode 2 chip is provided on the stem 1, and a hemispherical resin lens 3 is integrally molded on the stem 1 above the chip. Further, as shown in FIG. 6, a chip of a light emitting diode 2 is mounted on the stem 1, a ball lens 4 is provided on top of the chip, and a flat lens 5 having a circular aperture is provided only in the portion of the ball lens 4. A light emitting diode that emits light only from its center is also known.

（発明が解決しようとする問題点） しかしながら第５図に示した従来の発光ダイオードでは
、第５図に発光パターンを示すように樹脂レンズ３の側
方にサイドビームが生じ、単一の発光パターンとならな
いという欠点があった。又第６゛図に示すように中心に
のみ開口を有するようにすれば単一の発光パターンを得
ることができるが、発光ダイオード２のチップ上に球レ
ンズ４を実装する工程が必要となるため、加工が複雑に
なるという欠点があった。又部品の組立を夫々に行う必
要があるため品質にばらつきが生じ易く、多数の発光素
子を並べて発光アレイ構造とする場合には信頼性が低下
するという欠点があった。(Problems to be Solved by the Invention) However, in the conventional light emitting diode shown in FIG. 5, side beams are generated on the sides of the resin lens 3 as shown in the light emitting pattern in FIG. The disadvantage was that it did not. Also, as shown in Fig. 6, a single light emitting pattern can be obtained by having an opening only in the center, but this requires a step of mounting the ball lens 4 on the chip of the light emitting diode 2. However, the disadvantage was that the processing was complicated. Furthermore, since it is necessary to assemble each component individually, the quality tends to vary, and when a large number of light emitting elements are arranged to form a light emitting array structure, reliability is reduced.

〔発明の目的〕[Purpose of the invention]

本発明はこのような従来の発光ダイオードの問題点に鑑
みてなされたものであって、比較的容易に単一の発光パ
ターンを得るようにすることを技術的課題とする。The present invention has been made in view of the problems of conventional light emitting diodes, and its technical objective is to relatively easily obtain a single light emitting pattern.

〔発明の構成と効果〕[Structure and effects of the invention]

（問題点を解決するための手段） 本発明は単一の発光パターンを有する発光ダイオードで
あって、第１図に示すように、発光ダイオードチップの
発光面上部に成形用透明樹脂を注入しフレネルレンズを
構成したことを特徴とするものである。(Means for Solving the Problems) The present invention is a light emitting diode having a single light emitting pattern, as shown in FIG. It is characterized by having a lens structure.

（作用） このような特徴を有する本発明によれば、発光ダイオー
ドのチップの発゛光面上に透明樹脂を注入してフレネル
型のレンズを一体に形成し発光ダイオードを構成してい
る。そうすれば発光ダイオードを駆動したときにフレネ
ルレンズによって４１−の発光パターンが得られる。(Function) According to the present invention having such characteristics, a light emitting diode is constructed by injecting a transparent resin onto the light emitting surface of a light emitting diode chip and integrally forming a Fresnel type lens. Then, when the light emitting diode is driven, a light emission pattern of 41- can be obtained by the Fresnel lens.

（発明の効果） そのため本発明によれば、発光ダイオードの中心に単一
の発光パターンを有する発光ダイオードを得ることがで
きる。又チップの製造時に同時にフレネルレンズを構成
することができるため、製造工程を極めて簡略化するこ
とができ、品質にばらつきが生じにく（信頼性を大幅に
向上することが可能となる。(Effects of the Invention) Therefore, according to the present invention, a light emitting diode having a single light emitting pattern at the center of the light emitting diode can be obtained. Furthermore, since the Fresnel lens can be constructed at the same time as the chip is manufactured, the manufacturing process can be extremely simplified, and the quality is less likely to vary (reliability can be significantly improved).

〔実施例の説明〕[Explanation of Examples]

第１図は本発明の一実施例による発光ダイオードを示す
断面図であり、第２図はその製造工程を示す図である。FIG. 1 is a sectional view showing a light emitting diode according to an embodiment of the present invention, and FIG. 2 is a diagram showing the manufacturing process thereof.

まず第２図（ａ）に示すように、既に基板１１上に電極
を介して取付けられている二層の発光ダイオードチップ
１２の上面に直接レンズを形成する。即ちチップ１２に
接続された上部電極１３にレンズ成形用透明樹脂が流出
しないようにチップ１２上に円形又は四角形の環状のダ
ム１４を構成する。そしてその上部の中央に透明の樹脂
、例えば紫外線硬化樹脂１５を適量注入し、その上部よ
りレンズ成形用の透明の型１６によって第２図（Ｃ）に
示すように押圧する。そして光源１７より紫外光をレン
ズ成形用透明型１６の上部より照射して紫外線硬化樹脂
１５をフレネルレンズ１５ａとして形成する。そしてダ
ム１４及び透明型１６を取り除いて第１図に示すように
発光ダイオードを構成する。こうすれば発光ダイオード
の上部に単一の発光パターンを有する発光ダイオードと
することができる。第３図はこうして構成された発光ダ
イオードの斜視図である。尚本図において上部の１つの
電極は発光ダイオードに電流を供給するためのものであ
り、他の電極は発光ダイオードチップを基板１１上に固
定するためのものである。First, as shown in FIG. 2(a), a lens is formed directly on the upper surface of a two-layer light emitting diode chip 12 that has already been attached to a substrate 11 via electrodes. That is, a circular or square annular dam 14 is formed on the chip 12 so that the transparent resin for lens molding does not flow out to the upper electrode 13 connected to the chip 12. Then, an appropriate amount of a transparent resin, such as an ultraviolet curing resin 15, is injected into the center of the upper part, and the resin is pressed from the upper part with a transparent mold 16 for molding a lens as shown in FIG. 2(C). Then, ultraviolet light is irradiated from the upper part of the transparent mold 16 for lens molding from the light source 17 to form the ultraviolet curing resin 15 as a Fresnel lens 15a. Then, the dam 14 and the transparent mold 16 are removed to construct a light emitting diode as shown in FIG. In this way, the light emitting diode can have a single light emitting pattern on the upper part of the light emitting diode. FIG. 3 is a perspective view of the light emitting diode constructed in this manner. In this figure, one electrode at the top is for supplying current to the light emitting diode, and the other electrodes are for fixing the light emitting diode chip on the substrate 11.

又同様にして構成される発光ダイオードを基板上に多数
形成し第４図に示すようにアレイ上に構成することも可
能である。こうすれば中心に単一の発光パターンを有す
る発光ダイオードを容易に構成することができる。It is also possible to form a large number of similarly constructed light emitting diodes on a substrate and construct an array as shown in FIG. In this way, a light emitting diode having a single light emitting pattern at the center can be easily constructed.

尚本実施例はレンズ成形用樹脂として紫外線硬化性樹脂
を用いたが、透明の熱硬化性樹脂を用いるようにしても
よい。この場合にはレンズ成形用型１６を押圧した後熱
を加えて樹脂を硬化させ、発光ダイオードチップの上面
にフレネルレンズを構成することはいうまでもない。In this embodiment, an ultraviolet curable resin was used as the lens molding resin, but a transparent thermosetting resin may also be used. In this case, it goes without saying that after pressing the lens molding die 16, heat is applied to harden the resin to form a Fresnel lens on the upper surface of the light emitting diode chip.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の一実施例による発光ダイオードの断面
図とその発光パターンを示す図、第２図は本実施例の発
光ダイオードの製造工程を示す図、第３図は本実施例の
発光ダイオードを示す斜視図、第４図は多数の発光ダイ
オードを同一の基板上に配置した発光ダイオードアレイ
を示す斜視図、第５図は従来の発光ダイオードの一例を
示す図、第６図は従来の他の発光ダイオードの例を示す
図である。 １１−−−−−−一基板　　１２・−一一一一一発光ダ
イオードチソプ１３−−−−−一電極　　１４−・−−
−−−ダム　　１５−・−・紫外＆？を硬化性ｍＭＷ　
　　１５　ａ−・−フレネルレンズ１６−−−−−−レ
ンズ成形用透明型 特許出願人　　　立石電機株式会社 代理人　弁理士　岡本宜喜（他１名） 第１図 １１・・−幕棟 １２−−−−・・−灸九ｒイ寸−ド＋、′７゜１５ａ−
−−−−７レキルレンズ 第２図 第３図 第４図FIG. 1 is a cross-sectional view of a light emitting diode according to an embodiment of the present invention and its light emitting pattern. FIG. 2 is a diagram showing the manufacturing process of the light emitting diode of this embodiment. FIG. FIG. 4 is a perspective view showing a light emitting diode array in which a large number of light emitting diodes are arranged on the same substrate, FIG. 5 is a diagram showing an example of a conventional light emitting diode, and FIG. 6 is a diagram showing a conventional light emitting diode. It is a figure which shows the example of another light emitting diode. 11------One substrate 12・-1111 Light emitting diode 13---One electrode 14---・---
---Dam 15---Ultraviolet &? curable mMW
15 a--Fresnel lens 16-----Transparent type for lens molding Patent applicant Tateishi Electric Co., Ltd. Agent Patent attorney Yoshiki Okamoto (and one other person) Figure 111...-Bakufu 12-- ---...- Moxibustion 9r Isun-do+,'7゜15a-
---7 Requil Lens Figure 2 Figure 3 Figure 4

Claims (2)

【特許請求の範囲】[Claims] （１）発光ダイオードチップの発光面上部に成形用透明
樹脂を注入しフレネルレンズを構成したことを特徴とす
る発光ダイオード。(1) A light emitting diode characterized in that a Fresnel lens is formed by injecting a transparent molding resin into the upper part of the light emitting surface of a light emitting diode chip. （２）前記成形用透明樹脂は、紫外線硬化性樹脂である
ことを特徴とする特許請求の範囲第１項記載の発光ダイ
オード。(2) The light emitting diode according to claim 1, wherein the transparent resin for molding is an ultraviolet curable resin.
JP62119299A 1987-05-15 1987-05-15 Light emitting diode Pending JPS63283174A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62119299A JPS63283174A (en) 1987-05-15 1987-05-15 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62119299A JPS63283174A (en) 1987-05-15 1987-05-15 Light emitting diode

Publications (1)

Publication Number Publication Date
JPS63283174A true JPS63283174A (en) 1988-11-21

Family

ID=14757978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62119299A Pending JPS63283174A (en) 1987-05-15 1987-05-15 Light emitting diode

Country Status (1)

Country Link
JP (1) JPS63283174A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0915448A (en) * 1995-06-26 1997-01-17 Takahisa Jitsuno Optical fiber connector and its production
EP1271665A2 (en) * 2001-06-25 2003-01-02 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JP2006041415A (en) * 2004-07-30 2006-02-09 Matsushita Electric Works Ltd Manufacturing method for light-emitting element
JP2006100684A (en) * 2004-09-30 2006-04-13 Matsushita Electric Works Ltd Method of manufacturing light-emitting element
EP1701388A1 (en) * 2005-03-10 2006-09-13 Nanogate Advanced Materials GmbH Light emitting diode
US7145181B2 (en) * 2001-04-27 2006-12-05 Osram Opto Semiconductors Gmbh Semiconductor chip for optoelectronics
JP2007059492A (en) * 2005-08-22 2007-03-08 Citizen Electronics Co Ltd Structure of fresnel lens-equipped chip led
WO2007031929A1 (en) * 2005-09-16 2007-03-22 Koninklijke Philips Electronics N.V. Method for manufacturing led wafer with light extracting layer
JP2009010435A (en) * 2001-03-30 2009-01-15 Philips Lumileds Lightng Co Llc Forming optical element of light emitting device for improved light extraction
JP2009119761A (en) * 2007-11-16 2009-06-04 Isotech Products Inc Molding method for light transmitting resin lens of led assembly
DE102008021658A1 (en) 2008-04-30 2009-11-05 Ledon Lighting Jennersdorf Gmbh Light emitting device for e.g. traffic signal application, has LED, and partially transparent material e.g. silicon and organic polymer e.g. polymethyl methacrylate or polyimide, surrounding LED in direction of light emitted by LED
US7709282B2 (en) 2003-11-12 2010-05-04 Panasonic Electric Works Co., Ltd. Method for producing a light emitting device
CN107567660A (en) * 2015-05-13 2018-01-09 奥斯兰姆奥普托半导体有限责任公司 Method for producing the lens for photoelectron lighting apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5512774A (en) * 1978-07-13 1980-01-29 Mitsubishi Electric Corp Manufacturing method for semiconductor luminescent device
JPS6327087A (en) * 1986-07-21 1988-02-04 Hitachi Ltd Collimated light source element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5512774A (en) * 1978-07-13 1980-01-29 Mitsubishi Electric Corp Manufacturing method for semiconductor luminescent device
JPS6327087A (en) * 1986-07-21 1988-02-04 Hitachi Ltd Collimated light source element

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0915448A (en) * 1995-06-26 1997-01-17 Takahisa Jitsuno Optical fiber connector and its production
JP2012156566A (en) * 2001-03-30 2012-08-16 Philips Lumileds Lightng Co Llc Forming optical element in light emitting device for improving light extraction efficiency
JP2009010435A (en) * 2001-03-30 2009-01-15 Philips Lumileds Lightng Co Llc Forming optical element of light emitting device for improved light extraction
US7145181B2 (en) * 2001-04-27 2006-12-05 Osram Opto Semiconductors Gmbh Semiconductor chip for optoelectronics
EP1271665A2 (en) * 2001-06-25 2003-01-02 Kabushiki Kaisha Toshiba Semiconductor light emitting device
EP1271665A3 (en) * 2001-06-25 2003-10-15 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US6900473B2 (en) 2001-06-25 2005-05-31 Kabushiki Kaisha Toshiba Surface-emitting semiconductor light device
US7709282B2 (en) 2003-11-12 2010-05-04 Panasonic Electric Works Co., Ltd. Method for producing a light emitting device
JP2006041415A (en) * 2004-07-30 2006-02-09 Matsushita Electric Works Ltd Manufacturing method for light-emitting element
JP4635507B2 (en) * 2004-07-30 2011-02-23 パナソニック電工株式会社 Method for manufacturing light emitting device
JP2006100684A (en) * 2004-09-30 2006-04-13 Matsushita Electric Works Ltd Method of manufacturing light-emitting element
WO2006094983A1 (en) * 2005-03-10 2006-09-14 Nanogate Advanced Materials Gmbh Light-emitting diode
EP1701388A1 (en) * 2005-03-10 2006-09-13 Nanogate Advanced Materials GmbH Light emitting diode
JP2007059492A (en) * 2005-08-22 2007-03-08 Citizen Electronics Co Ltd Structure of fresnel lens-equipped chip led
WO2007031929A1 (en) * 2005-09-16 2007-03-22 Koninklijke Philips Electronics N.V. Method for manufacturing led wafer with light extracting layer
JP2009119761A (en) * 2007-11-16 2009-06-04 Isotech Products Inc Molding method for light transmitting resin lens of led assembly
DE102008021658A1 (en) 2008-04-30 2009-11-05 Ledon Lighting Jennersdorf Gmbh Light emitting device for e.g. traffic signal application, has LED, and partially transparent material e.g. silicon and organic polymer e.g. polymethyl methacrylate or polyimide, surrounding LED in direction of light emitted by LED
CN107567660A (en) * 2015-05-13 2018-01-09 奥斯兰姆奥普托半导体有限责任公司 Method for producing the lens for photoelectron lighting apparatus
JP2018521498A (en) * 2015-05-13 2018-08-02 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ Method for manufacturing a lens for an optoelectronic lighting device

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